Search results for: negative dielectric anisotropy
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 5063

Search results for: negative dielectric anisotropy

5063 The Effects of the Uniaxial Anisotropy and the Loss Tangent on the Resonant Frequencies in Stacked Rectangular Patches Configuration

Authors: Boualem Mekimah, Abderraouf Messai, Abdelkrim Belhedri

Abstract:

Dielectric substrates have an important attention in the fabrication of microstrip patch antennas. The effects of the uniaxial anisotropy and the loss tangent on resonant frequencies of microstrip patches consist of two perfectly conducting rectangular patches in stacked and offset configuration, embedded in a bilayer medium containing isotropic or uniaxial anisotropic materials. The Green’s functions are discussed in detail and numerical results are validated by comparing the computed results with previously published data. The numerical results show, that the uniaxial anisotropy has more effects on resonant frequencies according to the optical axis. However, the loss tangent of dielectric substrates has almost no effect on resonant frequencies, but it strongly affects the imaginary parts of the resonant frequencies of the antenna. The dielectric constant has no effect on the separation in terms of frequencies.

Keywords: resonant frequencies, loss tangent, microstrip patches, stacked, anisotropic materials, optical axis

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5062 Comparative Study of Al₂O₃ and HfO₂ as Gate Dielectric on AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors

Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

Abstract:

We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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5061 Composition Dependence of Exchange Anisotropy in PtₓMn₁₋ₓ/Co₇₀Fe₃₀ Films

Authors: Sina Ranjbar, Masakiyo Tsunoda, Mikihiko Oogane, Yasuo Ando

Abstract:

We systematically investigated the exchange anisotropy for ferromagnetic Co70Fe30 and antiferromagnetic PtMn bilayer films. We focused on the relevance between the exchange bias and the composition of the Ptₓ Mn₁₋ₓ (14 < x < 22 and 45 < x < 56 at %) films, and we successfully optimized the composition. The crystal structure of the Ptₓ Mn₁₋ₓ films was FCC for 14 < x < 22 at % and FCT for 45 < x < 56 at % after annealing at 370 ◦C for 6 hours. The unidirectional anisotropy constant (Jₖ) for fcc-Pt₁₅Mn₈₅ (20 nm) and fct-Pt₄₈Mn₅₂ (20 nm) prepared under optimum conditions in composition were 0.16 and 0.20 erg/cm², respectively. Both Pt₁₅Mn₈₅ and Pt₄₈Mn₅₂ films showed a larger unidirectional anisotropy constant (Jₖ) than in other reports. They also showed a flatter surface than that of other antiferromagnetic materials. The obtained PtMn films with a large exchange anisotropy and slight roughness are useful as an antiferromagnetic layer in spintronic applications.

Keywords: antiferromagnetic material, PtMn thin film, exchange anisotropy, composition dependence

Procedia PDF Downloads 239
5060 Electro-Optic Parameters of Ferroelectric Particles- Liquid Crystal Composites

Authors: T. D. Ibragimov, A. R. Imamaliyev, G. M. Bayramov

Abstract:

Influence of barium titanate particles on electro-optic properties of liquid crystal 4-cyano-4′-pentylbiphenyl (5CB) with positive dielectric anisotropy and the liquid crystalline (LC) mixture Н-37 consisting of 4-methoxybezylidene-4'–butylaniline and 4-ethoxybezylidene-4'–butylaniline with negative dielectric anisotropy was investigated. It was shown that a presence of particles inside 5СВ and H-37 decreased the clearing temperature from 35.2 °С to 32.5°С and from 61.2 oC to 60.1oC, correspondingly. The threshold voltage of the Fredericksz effect became 0.3 V for the BaTiO3-5CB colloid while the beginning of this effect of the pure 5СВ was observed at 2.1 V. Threshold voltage of the Fredericksz effect increased from 2.8 V to up 3.1 V at additive of particles into H-37. A rise time of the BaTiO3-5CB colloid improved while a decay time worsened in comparison with the pure 5CB at all applied voltages. The inverse trends were observed for the H-37 matrix, namely, a rise time worsened and a decay time improved. Among other things, the effect of fast light modulation was studied at application of the rectangular impulse with direct bias to an electro-optical cell with the BaTiO3 particles+5CB and the pure 5CB. At this case, a rise time of the composite worsened, a decay time improved in comparison with the pure 5CB. The pecularities of electrohydrodynamic instability (EHDI) formation was also investigated into the composite with the H-37 matrix. It was found that the voltage of the EHDI formation decreased, a rise time increased and a decay time decreased in comparison with the pure H-37. First of all, experimental results are explained by appearance of local electric fields near the polarized ferroelectric particles at application of external electric field and an existence of the additional obstacles (particles) for movement of ions.

Keywords: liquid crystal, ferroelectric particles, composite, electro-optics

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5059 Dielectric Properties of Ni-Al Nano Ferrites Synthesized by Citrate Gel Method

Authors: D. Ravinder, K. S. Nagaraju

Abstract:

Ni–Al ferrite with composition of NiAlxFe2-xO4 (x=0.2, 0.4 0.6, and 0.8, ) were prepared by citrate gel method. The dielectric properties for all the samples were investigated at room temperature as a function of frequency. The dielectric constant shows dispersion in the lower frequency region and remains almost constant at higher frequencies. The frequency dependence of dielectric loss tangent (tanδ) is found to be abnormal, giving a peak at certain frequency for mixed Ni-Al ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric loss tangent.

Keywords: ferrites, citrate method, lattice parameter, dielectric constant

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5058 Dielectric and Impedance Spectroscopy of Samarium and Lanthanum Doped Barium Titanate at Room Temperature

Authors: Sukhleen Bindra Narang, Dalveer Kaur, Kunal Pubby

Abstract:

Dielectric ceramic samples in the BaO-Re2O3-TiO2 ternary system were synthesized with structural formula Ba2-xRe4+2x/3Ti8O24 where Re= rare earth metal and Re= Sm and La where x varies from 0.0 to 0.6 with step size 0.1. Polycrystalline samples were prepared by the conventional solid state reaction technique. The dielectric, electrical and impedance analysis of all the samples in the frequency range 1KHz- 1MHz at room temperature (25°C) have been done to get the understanding of electrical conduction and dielectric relaxation and their correlation. Dielectric response of the samples at lower frequencies shows dielectric dispersion while at higher frequencies it shows dielectric relaxation. The ac conductivity is well fitted by the Jonscher law (σac = σdc+Aωn). The spectroscopic data in the impedance plane confirms the existence of grain contribution to the relaxation. All the properties are found out to be function of frequency as well as the amount of substitution.

Keywords: dielectric ceramics, dielectric constant, loss tangent, AC conductivity, impedance spectroscopy

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5057 Temperature Dependence of Relative Permittivity: A Measurement Technique Using Split Ring Resonators

Authors: Sreedevi P. Chakyar, Jolly Andrews, V. P. Joseph

Abstract:

A compact method for measuring the relative permittivity of a dielectric material at different temperatures using a single circular Split Ring Resonator (SRR) metamaterial unit working as a test probe is presented in this paper. The dielectric constant of a material is dependent upon its temperature and the LC resonance of the SRR depends on its dielectric environment. Hence, the temperature of the dielectric material in contact with the resonator influences its resonant frequency. A single SRR placed between transmitting and receiving probes connected to a Vector Network Analyser (VNA) is used as a test probe. The dependence of temperature between 30 oC and 60 oC on resonant frequency of SRR is analysed. Relative permittivities ‘ε’ of test samples for different temperatures are extracted from a calibration graph drawn between the relative permittivity of samples of known dielectric constant and their corresponding resonant frequencies. This method is found to be an easy and efficient technique for analysing the temperature dependent permittivity of different materials.

Keywords: metamaterials, negative permeability, permittivity measurement techniques, split ring resonators, temperature dependent dielectric constant

Procedia PDF Downloads 378
5056 Dielectric Recovery Characteristics of High Voltage Gas Circuit Breakers Operating with CO₂ Mixture

Authors: Peng Lu, Branimir Radisavljevic, Martin Seeger, Daniel Over, Torsten Votteler, Bernardo Galletti

Abstract:

CO₂-based gas mixtures exhibit huge potential as the interruption medium for replacing SF₆ in high voltage switchgears. In this paper, the recovery characteristics of dielectric strength of CO₂-O₂ mixture in the post arc phase after the current zero are presented. As representative examples, the dielectric recovery curves under conditions of different gas filling pressures and short-circuit current amplitudes are presented. A series of dielectric recovery measurements suggests that the dielectric recovery rate is proportional to the mass flux of the blowing gas, and the dielectric strength recovers faster in the case of lower short circuit currents.

Keywords: CO₂ mixture, high voltage circuit breakers, dielectric recovery rate, short-circuit current, mass flux

Procedia PDF Downloads 168
5055 Effect of Anisotropy and Heterogeneity on Bearing Capacity of Shallow Foundations

Authors: S. A. Naeini, A. Mahigir

Abstract:

Naturally occurring cohesive soil deposits are inherently anisotropic with respect to different properties amongst which is the shear strength. The anisotropy is primary due to the process of sedimentation followed by predominantly one-dimensional consolidation. However, most soils in their natural states exhibit some anisotropy with respect to shear strength and some non-homogeneity with respect to depth. In this paper the standard Mohr-Coulomb yield criterion was modified to consider the anisotropic shear strength properties. The term non-homogeneity used in this paper refers to only the cohesion intercept which is assumed to vary linearly with depth. The effect of both anisotropy and deterministic non-homogeneity on bearing capacity of shallow foundation was investigated using finite difference method. Result of numerical analysis indicates that the cohesion anisotropy has a significant effect on bearing capacity of shallow foundation. Furthermore, the linear and bilinear heterogeneity affects the bearing capacity in a similar way although the anisotropy issue emerges to be more important as far as shallow foundations are considered.

Keywords: anisotropic ratio, finite difference analysis, bearing capacity, heterogeneity

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5054 Ultrahigh Thermal Stability of Dielectric Permittivity in 0.6Bi(Mg₁/₂Ti₁/₂)O₃-0.4Ba₀.₈Ca₀.₂(Ti₀.₈₇₅Nb₀.₁₂₅)O₃

Authors: Kaiyuan Chena, Senentxu Lanceros-Méndeza, Laijun Liub, Qi Zhanga

Abstract:

0.6Bi(Mg1/2Ti1/2)O3-0.4Ba0.8Ca0.2(Nb0.125Ti0.875)O3 (0.6BMT-0.4BCNT) ceramics with a pseudo-cubic structure and re-entrant dipole glass behavior have been investigated via X-ray diffraction and dielectric permittivity-temperature spectra. It shows an excellent dielectric-temperature stability with small variations of dielectric permittivity (± 5%, 420 - 802 K) and dielectric loss tangent (tanδ < 2.5%, 441 - 647 K) in a wide temperature range. Three dielectric anomalies are observed from 290 K to 1050 K. The low-temperature weakly coupled re-entrant relaxor behavior was described using Vogel-Fulcher law and the new glass model. The mid- and high-temperature dielectric anomalies are characterized by isothermal impedance and electrical modulus. The activation energy of both dielectric relaxation and conductivity follows the Arrhenius law in the temperature ranges of 633 - 753 K and 833 - 973 K, respectively. The ultrahigh thermal stability of the dielectric permittivity is attributed to the weakly coupling of polar clusters, the formation of diffuse phase transition (DPT) and the local phase transition of calcium-containing perovskite.

Keywords: permittivity, relaxor, electronic ceramics, activation energy

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5053 Experimental Analysis of the Origins of the Anisotropy Behavior in the 2017 AA Aluminum Alloy

Authors: May Abdelghani

Abstract:

The present work is devoted to the study of the microstructural anisotropy in mechanical cyclic behavior of the 2017AA aluminum alloy which is widely used in the aerospace industry. The main purpose of the study is to investigate the microstructural origins of this anisotropy already confirmed in our previous work in 2017AA aluminum alloy. To do this, we have used the microstructural analysis resources such as Scanning Electron Microscope (SEM) to see the differences between breaks from different directions of cyclic loading. Another resource of investigation was used in this study is that the EBSD method, which allows us to obtain a mapping of the crystallographic texture of our material. According to the obtained results in the microscopic analysis, we are able to identify the origins of the anisotropic behavior at the macroscopic scale.

Keywords: fatigue damage, cyclic behavior, anisotropy, microstructural analysis

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5052 Extension-Torsion-Inflation Coupling in Compressible Magnetoelastomeric Tubes with Helical Magnetic Anisotropy

Authors: Darius Diogo Barreto, Ajeet Kumar, Sushma Santapuri

Abstract:

We present an axisymmetric variational formulation for coupled extension-torsion-inflation deformation in magnetoelastomeric thin tubes when both azimuthal and axial magnetic fields are applied. The tube's material is assumed to have a preferred magnetization direction which imparts helical magnetic anisotropy to the tube. We have also derived the expressions of the first derivative of free energy per unit tube's undeformed length with respect to various imposed strain parameters. On applying the thin tube limit, the two nonlinear ordinary differential equations to obtain the in-plane radial displacement and radial component of the Lagrangian magnetic field get converted into a set of three simple algebraic equations. This allows us to obtain simple analytical expressions in terms of the applied magnetic field, magnetization direction, and magnetoelastic constants, which tell us how these parameters can be tuned to generate positive/negative Poisson's effect in such tubes. We consider both torsionally constrained and torsionally relaxed stretching of the tube. The study can be useful in designing magnetoelastic tubular actuators.

Keywords: nonlinear magnetoelasticity, extension-torsion coupling, negative Poisson's effect, helical anisotropy, thin tube

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5051 Effect of Ba Addition on the Dielectric Properties and Microstructure of (Ca₀.₆Sr₀.₄)ZrO₃

Authors: Ying-Chieh Lee, Huei-Jyun Shih, Ting-Yang Wang, Christian Pithan

Abstract:

This study focuses on the synthesis and characterization of Ca₀.₆Sr₀.₄₋ₓBaₓZrO₃ (x = 0.01, 0.04, 0.07, and 0.10) ceramics prepared via the solid-state method and sintered at 1450 °C. The impact of Sr substitution by Ba at the A-site of the perovskite structure on crystalline properties and microwave dielectric performance was investigated. The experimental results show the formation of a single-phase structure, Ca₀.₆₁₂Sr₀.₃₈₈ZrO₃(CSZ), across the entire range of x values. It is evident that the Ca₀.₆Sr₀.₃₉Ba₀.₀₁ZrO₃ ceramics exhibit the highest sintering density and the lowest porosity. These ceramics exhibit impressive dielectric properties, including a high permittivity of 28.38, low dielectric loss of 4.0×10⁻⁴, and a Q factor value of 22988 at 9~10GHz. The research reveals that the influences of Sr substitution by Ba in enhancing the microwave dielectric properties of Ca₀.₆₁₂Sr₀.₃₈₈ZrO₃ ceramics and the impedance curves clearly showed effects on the electrical properties.

Keywords: NPO dielectric material, (Ca₀.₆Sr₀.₄)ZrO₃, microwave dielectric properties

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5050 Chaotic Response of Electrical Insulation System with Gaseous Dielectric under High AC and DC Voltages

Authors: Arijit Basuray

Abstract:

It is well known that if an electrical insulation system is stressed under high voltage then discharge may occur in various form and if the system is made of composite dielectric having interfaces of materials having different dielectric constant discharge may occur due to gross mismatch of dielectric constant causing intense local field in the interfaces. Here author has studied, firstly, behavior of discharges in gaseous dielectric circuit under AC and DC voltages. A gaseous dielectric circuit is made such that a pair of electrode of typical geometry is used to make the discharges occur under application of AC and DC voltages. Later on, composite insulation system with air gap is also studied. Discharge response of the dielectric circuit is measured across a typically designed impedance. The time evolution of the discharge characteristics showed some interesting chaotic behavior. Author here proposed some analysis of such behavior of the discharge pattern and discussed about the possibility of presence of such discharge circuit in lumped electric circuit.

Keywords: electrical insulation system, EIS, composite dielectric, discharge, chaos

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5049 Dielectric Properties in Frequency Domain of Main Insulation System of Printed Circuit Board

Authors: Xize Dai, Jian Hao, Claus Leth Bak, Gian Carlo Montanari, Huai Wang

Abstract:

Printed Circuit Board (PCB) is a critical component applicable to power electronics systems, especially for high-voltage applications involving several high-voltage and high-frequency SiC/GaN devices. The insulation system of PCB is facing more challenges from high-voltage and high-frequency stress that can alter the dielectric properties. Dielectric properties of the PCB insulation system also determine the electrical field distribution that correlates with intrinsic and extrinsic aging mechanisms. Hence, investigating the dielectric properties in the frequency domain of the PCB insulation system is a must. The paper presents the frequency-dependent, temperature-dependent, and voltage-dependent dielectric properties, permittivity, conductivity, and dielectric loss tangents of PCB insulation systems. The dielectric properties mechanisms associated with frequency, temperature, and voltage are revealed from the design perspective. It can be concluded that the dielectric properties of PCB in the frequency domain show a strong dependence on voltage, frequency, and temperature. The voltage-, frequency-, and temperature-dependent dielectric properties are associated with intrinsic conduction behavior and polarization patterns from the perspective of dielectric theory. The results may provide some reference for the PCB insulation system design in high voltage, high frequency, and high-temperature power electronics applications.

Keywords: electrical insulation system, dielectric properties, high voltage and frequency, printed circuit board

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5048 Dielectric Properties of MWCNT-Muscovite/Epoxy Hybrid Composites

Authors: Nur Suraya Anis Ahmad Bakhtiar, Hazizan Md Akil

Abstract:

In the present work, the dielectric properties of Epoxy/MWCNTs-muscovite HYBRID and MIXED composites based on ratio 30:70 were studies. The multi-wall carbon nanotubes (MWCNTs) were prepared by two method; (a) muscovite-MWCNTs hybrids were synthesized by chemical vapor deposition (CVD) and (b) physically mixing of muscovite with MWCNTs. The effect of different preparations of the composites and filler loading was evaluated. It is revealed that the dielectric constants of HYBRID epoxy composites are slightly higher compared to MIXED epoxy composites. It is also indicated that the dielectric constant increased by increases the MWCNTs filler loading.

Keywords: muscovite, epoxy, dielectric properties, hybrid composite

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5047 Structural Properties of Polar Liquids in Binary Mixture Using Microwave Technique

Authors: Shagufta Tabassum, V. P. Pawar

Abstract:

The study of static dielectric properties in a binary mixture of 1,2 dichloroethane (DE) and n,n dimethylformamide (DMF) polar liquids has been carried out in the frequency range of 10 MHz to 30 GHz for 11 different concentration using time domain reflectometry technique at 10ºC temperature. The dielectric relaxation study of solute-solvent mixture at microwave frequencies gives information regarding the creation of monomers and multimers as well as interaction between the molecules of the binary mixture. The least squares fit method is used to determine the values of dielectric parameters such as static dielectric constant (ε0), dielectric constant at high frequency (ε) and relaxation time (τ).

Keywords: shagufta shaikhexcess parameters, relaxation time, static dielectric constant, time domain reflectometry

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5046 Comparative Dielectric Properties of 1,2-Dichloroethane with n-Methylformamide and n,n-Dimethylformamide Using Time Domain Reflectometry Technique in Microwave Frequency

Authors: Shagufta Tabassum, V. P. Pawar, jr., G. N. Shinde

Abstract:

The study of dielectric relaxation properties of polar liquids in the binary mixture has been carried out at 10, 15, 20 and 25 ºC temperatures for 11 different concentrations using time domain reflectometry technique. The dielectric properties of a solute-solvent mixture of polar liquids in the frequency range of 10 MHz to 30 GHz gives the information regarding formation of monomers and multimers and also an interaction between the molecules of the liquid mixture under study. The dielectric parameters have been obtained by the least squares fit method using the Debye equation characterized by a single relaxation time without relaxation time distribution.

Keywords: excess properties, relaxation time, static dielectric constant, and time domain reflectometry technique

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5045 Greatly Improved Dielectric Properties of Poly'vinylidene fluoride' Nanocomposites Using Ag-BaTiO₃ Hybrid Nanoparticles as Filler

Authors: K. Silakaew, P. Thongbai

Abstract:

There is an increasing need for high–permittivity polymer–matrix composites (PMC) owing to the rapid development of the electronics industry. Unfortunately, the dielectric permittivity of PMC is still too low ( < 80). Moreover, the dielectric loss tangent is usually high (tan > 0.1) when the dielectric permittivity of PMC increased. In this research work, the dielectric properties of poly(vinylidene fluoride) (PVDF)–based nanocomposites can be significantly improved by incorporating by silver–BaTiO3 (Ag–BT) ceramic hybrid nanoparticles. The Ag–BT/PVDF nanocomposites were fabricated using various volume fractions of Ag–BT hybrid nanoparticles (fAg–BT = 0–0.5). The Ag–BT/PVDF nanocomposites were characterized using several techniques. The main phase of Ag and BT can be detected by the XRD technique. The microstructure of the Ag–BT/PVDF nanocomposites was investigated to reveal the dispersion of Ag–BT hybrid nanoparticles because the dispersion state of a filler can have an effect on the dielectric properties of the nanocomposites. It was found that the filler hybrid nanoparticles were well dispersed in the PVDF matrix. The phase formation of PVDF phases was identified using the XRD and FTIR techniques. We found that the fillers can increase the polar phase of a PVDF polymer. The fabricated Ag–BT/PVDF nanocomposites are systematically characterized to explain the dielectric behavior in Ag–BT/PVDF nanocomposites. Interestingly, largely enhanced dielectric permittivity (>240) and suppressed loss tangent (tan<0.08) over a wide frequency range (102 – 105 Hz) are obtained. Notably, the dielectric permittivity is slightly dependent on temperature. The greatly enhanced dielectric permittivity was explained by the interfacial polarization between the Ag and PVDF interface, and due to a high permittivity of BT particles.

Keywords: BaTiO3, PVDF, polymer composite, dielectric properties

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5044 Ultra-Low Loss Dielectric Properties of (Mg1-xNix)2(Ti0.95Sn0.05)O4 Microwave Ceramics

Authors: Bing-Jing Li, Sih-Yin Wang, Tse-Chun Yeh, Yuan-Bin Chen

Abstract:

Microwave dielectric ceramic materials of (Mg1-xNix)2(Ti0.95Sn0.05)O4 for x = 0.01, 0.03, 0.05, 0.07 and 0.09 were prepared and sintered at 1250–1400ºC. The microstructure and microwave dielectric properties of the ceramic materials were examined and measured. The observations shows that the content of Ni2+ ions has little effect on the crystal structure, dielectric constant, temperature coefficient of resonant frequency (τf) and sintering temperatures of the ceramics. However, the quality values (Q×f) are greatly improved due to the addition of Ni2+ ions. The present study showed that the ceramic material prepared for x = 0.05 and sintered at 1325ºC had the best Q×f value of 392,000 GHz, about 23% improvement compared with that of Mg2(Ti0.95Sn0.05)O4.

Keywords: (Mg1-xNix)2(Ti0.95Sn0.05)O4, microwave dielectric ceramics, high quality factor, high frequency wireless communication

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5043 Dielectric Study of Lead-Free Double Perovskite Structured Polycrystalline BaFe0.5Nb0.5O3 Material

Authors: Vijay Khopkar, Balaram Sahoo

Abstract:

Material with high value of dielectric constant has application in the electronics devices. Existing lead based materials have issues such as toxicity and problem with synthesis procedure. Double perovskite structured barium iron niobate (BaFe0.5Nb0.5O3, BFN) is the lead-free material, showing a high value of dielectric constant. Origin of high value of the dielectric constant in BFN is not clear. We studied the dielectric behavior of polycrystalline BFN sample over wide temperature and frequency range. A BFN sample synthesis by conventional solid states reaction method and phase pure dens pellet was used for dielectric study. The SEM and TEM study shows the presence of grain and grain boundary region. The dielectric measurement was done between frequency range of 40 Hz to 5 MHz and temperature between 20 K to 500 K. At 500 K temperature and lower frequency, there observed high value of dielectric constant which decreases with increase in frequency. The dipolar relaxation follows non-Debye type polarization with relaxation straight of 3560 at room temperature (300 K). Activation energy calculated from the dielectric and modulus formalism found to be 17.26 meV and 2.74 meV corresponds to the energy required for the motion of Fe3+ and Nb5+ ions within the oxygen octahedra. Our study shows that BFN is the order disorder type ferroelectric material.

Keywords: barium iron niobate, dielectric, ferroelectric, non-Debye

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5042 A Computational Diagnostics for Dielectric Barrier Discharge Plasma

Authors: Zainab D. Abd Ali, Thamir H. Khalaf

Abstract:

In this paper, the characteristics of electric discharge in gap between two (parallel-plate) dielectric plates are studies, the gap filled with Argon gas in atm pressure at ambient temperature, the thickness of gap typically less than 1 mm and dielectric may be up 10 cm in diameter. One of dielectric plates a sinusoidal voltage is applied with Rf frequency, the other plates is electrically grounded. The simulation in this work depending on Boltzmann equation solver in first few moments, fluid model and plasma chemistry, in one dimensional modeling. This modeling have insight into characteristics of Dielectric Barrier Discharge through studying properties of breakdown of gas, electric field, electric potential, and calculating electron density, mean electron energy, electron current density ,ion current density, total plasma current density. The investigation also include: 1. The influence of change in thickness of gap between two plates if we doubled or reduced gap to half. 2. The effect of thickness of dielectric plates. 3. The influence of change in type and properties of dielectric material (gass, silicon, Teflon).

Keywords: computational diagnostics, Boltzmann equation, electric discharge, electron density

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5041 Structural and Electrical Characterization of Polypyrrole and Cobalt Aluminum Oxide Nanocomposites

Authors: Sutar Rani Ananda, M. V. Murugendrappa

Abstract:

To investigate electrical properties of conducting polypyrrole (PPy) and cobalt aluminum oxide (CAO) nanocomposites, impedance analyzer in frequency range of 100 Hz to 5 MHz is used. In this work, PPy/CAO nanocomposites were synthesized by chemical oxidation polymerization method in different weight percent of CAO in PPy. The dielectric properties and AC conductivity studies were carried out for different nanocomposites in temperature range of room temperature to 180 °C. With the increase in frequency, the dielectric constant for all the nanocomposites was observed to decrease. AC conductivity of PPy was improved by addition of CAO nanopowder.

Keywords: polypyrrole, dielectric constant, dielectric loss, AC conductivity

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5040 Dielectric Behavior of 2D Layered Insulator Hexagonal Boron Nitride

Authors: Nikhil Jain, Yang Xu, Bin Yu

Abstract:

Hexagonal boron nitride (h-BN) has been used as a substrate and gate dielectric for graphene field effect transistors (GFETs). Using a graphene/h-BN/TiN (channel/dielectric/gate) stack, key material properties of h-BN were investigated i.e. dielectric strength and tunneling behavior. Work function difference between graphene and TiN results in spontaneous p-doping of graphene through a multi-layer h-BN flake. However, at high levels of current stress, n-doping of graphene is observed, possibly due to the charge transfer across the thin h-BN multi layer. Neither Direct Tunneling (DT) nor Fowler-Nordheim Tunneling (FNT) was observed in TiN/h-BN/Au hetero structures with h-BN showing two distinct volatile conduction states before breakdown. Hexagonal boron nitride emerges as a material of choice for gate dielectrics in GFETs because of robust dielectric properties and high tunneling barrier.

Keywords: graphene, transistors, conduction, hexagonal boron nitride, dielectric strength, tunneling

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5039 Dielectric Properties of La2MoO6 Ceramics at Microwave Frequency

Authors: Yih-Chien Chen, Yu-Cheng You

Abstract:

The microwave dielectric properties of La2MoO6 ceramics were investigated with a view to their application in mobile communication. La2MoO6 ceramics were prepared by the conventional solid-state method with various sintering conditions. The X-ray diffraction peaks of La2MoO6 ceramic did not vary significantly with sintering conditions. The average grain size of La2MoO6 ceramics increased as the temperature and time of sintering increased. A maximum density of 5.67 g/cm3, a dielectric constants (εr) of 14.1, a quality factor (Q×f) of 68,000 GHz, and a temperature coefficient of resonant frequency (τf) of -56 ppm/℃ were obtained when La2MoO6 ceramics that were sintered at 1300 ℃ for 4h.

Keywords: ceramics, sintering, microwave dielectric properties, La2MoO6

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5038 Dielectric Properties of Thalium Selenide Thin Films at Radio Wave Frequencies

Authors: Onur Potok, Deniz Deger, Kemal Ulutas, Sahin Yakut, Deniz Bozoglu

Abstract:

Thalium Selenide (TlSe) is used for optoelectronic devices, pressure sensitive detectors, and gamma-ray detectors. The TlSe samples were grown as large single crystals using the Stockbarger-Bridgman method. The thin films, in the form of Al/TlSe/Al, were deposited on the microscope slide in different thicknesses (300-3000 Å) using thermal evaporation technique at 10-5 Torr. The dielectric properties of (TlSe) thin films, capacitance (C) and dielectric loss factor (tanδ), were measured in a frequency range of 10-105 Hz, and temperatures between 213K and 393K via Broadband Dielectric Spectroscopy analyzer. The dielectric constant (ε’) and the dielectric loss (ε’’) of the thin films were derived from measured parameters (C and tanδ). These results showed that the dielectric properties of TlSe thin films are frequency and temperature dependent. The capacitance and the dielectric constant decrease with increasing frequency and decreasing temperature. The dielectric loss of TlSe thin films decreases with increasing frequency, on the other hand, they increase with increasing temperature and increasing thicknesses. There is two relaxation region in the investigated frequency and temperature interval. These regions can be called as low and high-frequency dispersion regions. Low-frequency dispersion region can be attributed to the polarization of the main part of the chain structure of TlSe while high-frequency dispersion region can be attributed to the polarization of side parts of the structure.

Keywords: thin films, thallium selenide, dielectric spectroscopy, binary compounds

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5037 The Effect of Heating-Liquid Nitrogen Cooling on Fracture Toughness of Anisotropic Rock

Authors: A. Kavandi, K. Goshtasbi, M. R. Hadei, H. Nejati

Abstract:

In geothermal energy production, the method of liquid nitrogen (LN₂) fracturing in hot, dry rock is one of the most effective methods to increase the permeability of the reservoir. The geothermal reservoirs mainly consist of hard rocks such as granites and metamorphic rocks like gneiss with high temperatures. Gneiss, as a metamorphic rock, experiences a high level of inherent anisotropy. This type of anisotropy is considered as the nature of rocks, which affects the mechanical behavior of rocks. The aim of this study is to investigate the effects of heating-liquid nitrogen (LN₂) cooling treatment and rock anisotropy on the fracture toughness of gneiss. For this aim, a series of semi-circular bend (SCB) tests were carried out on specimens of gneiss with different anisotropy plane angles (0°, 30°, 60°, and 90°). In this study, gneiss specimens were exposed to heating–cooling treatment through gradual heating to 100°C followed by LN₂ cooling. Results indicate that the fracture toughness of treated samples is lower than that of untreated samples, and with increasing the anisotropy plane angle, the fracture toughness increases. The scanning electron microscope (SEM) technique is also implemented to evaluate the fracture process zone (FPZ) ahead of the crack tip.

Keywords: heating-cooling, anisotropic rock, fracture toughness, liquid nitrogen

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5036 Electrical and Magnetic Properties of Neodymium and Erbium Doped Bismuth Ferrite Multifunctional Materials for Spintronic Devices

Authors: Ravinder Dachepalli, Naveena Gadwala, K. Vani

Abstract:

Nd and Er substituted bismuth nano crystalline multifunctional materials were prepared by citrate gel autocombution technique. The structural characterization was carried out by XRD and SEM. Electrical properties such are electrical conductivity and dielectric properties have been measured. Plots of electrical conductivity versus temperature increases with increasing temperature and shown a transition near Curie temperature. Dielectric properties such are dielectric constant and dielectric loss tangent have been measured from 20Hz to 2 MHz at room temperature. Plots of dielectric constant versus frequency show a normal dielectric behaviour of multifunctional materials. Temperature dependence of magnetic properties of Bi-Nd and Bi-Er multi-functional materials were carried out by using Vibrating sample magnetometer (VSM). The magnetization as a function of an applied field ±100 Oe was carried out at 3K and 360 K. Zero field Cooled (ZFC) and Field Cooled (FC) magnetization measurements under an applied field of 100Oe a in the temperature range of 5-375K. The observed results can be explained for spintronic devices.

Keywords: Bi-Nd and Bi-Er Multifunctional Materia, Citrate Gel Auto combustion Technique, FC-ZFC magnetization, Dielectric constant

Procedia PDF Downloads 376
5035 Piezoelectric and Dielectric Properties of Poly(Vinylideneflouride-Hexafluoropropylene)/ZnO Nanocomposites

Authors: P. Hemalatha, Deepalekshmi Ponnamma, Mariam Al Ali Al-Maadeed

Abstract:

The Poly(vinylideneflouride-hexafluoropropylene) (PVDF-HFP)/ zinc oxide (ZnO) nanocomposites films were successfully prepared by mixing the fine ZnO particles into PVDF-HFP solution followed by film casting and sandwich techniques. Zinc oxide nanoparticles were synthesized by hydrothermal method. Fourier transform infrared (FT-IR) spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the structure and properties of the obtained nanocomposites. The dielectric properties of the PVDF-HFP/ZnO nanocomposites were analyzed in detail. In comparison with pure PVDF-HFP, the dielectric constant of the nanocomposite (1wt% ZnO) was significantly improved. The piezoelectric co-efficients of the nanocomposites films were measured. Experimental results revealed the influence of filler on the properties of PVDF-HFP and enhancement in the output performance and dielectric properties reflects the ability for energy storage capabilities.

Keywords: dielectric constant, hydrothermal, nanoflowers, organic compounds

Procedia PDF Downloads 255
5034 Dependence of Dielectric Properties on Sintering Conditions of Lead Free KNN Ceramics Modified With Li-Sb

Authors: Roopam Gaur, K. Chandramani Singh, Radhapiyari Laishram

Abstract:

In order to produce lead free piezoceramics with optimum piezoelectric and dielectric properties, KNN modified with Li+ (as an A site dopant) and Sb5+ (as a B site dopant) (K0.49Na0.49Li0.02) (Nb0.96Sb0.04) O3 (referred as KNLNS in this paper) have been synthesized using solid state reaction method and conventional sintering technique. The ceramics were sintered in the narrow range of 10500C-10900C for 2-3 hours to get precise information about sintering parameters. Detailed study of dependence of microstructural, dielectric and piezoelectric properties on sintering conditions was then carried out. The study suggests that the volatility of the highly hygroscopic KNN ceramics is not only sensitive to sintering temperatures but also to sintering durations. By merely reducing the sintering duration for a given sintering temperature we saw an increase in the density of the samples which was supported by the increase in dielectric constants of the ceramics. And since density directly or indirectly affects almost all the associated properties, other dielectric and piezoelectric properties were also enhanced as we approached towards the most suitable sintering temperature and duration combination.

Keywords: piezoelectric, dielectric, Li, Sb, KNN, conventional sintering

Procedia PDF Downloads 414