Search results for: field programmable gate array (FPGA)
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 8961

Search results for: field programmable gate array (FPGA)

8931 An Efficient FPGA Realization of Fir Filter Using Distributed Arithmetic

Authors: M. Iruleswari, A. Jeyapaul Murugan

Abstract:

Most fundamental part used in many Digital Signal Processing (DSP) application is a Finite Impulse Response (FIR) filter because of its linear phase, stability and regular structure. Designing a high-speed and hardware efficient FIR filter is a very challenging task as the complexity increases with the filter order. In most applications the higher order filters are required but the memory usage of the filter increases exponentially with the order of the filter. Using multipliers occupy a large chip area and need high computation time. Multiplier-less memory-based techniques have gained popularity over past two decades due to their high throughput processing capability and reduced dynamic power consumption. This paper describes the design and implementation of highly efficient Look-Up Table (LUT) based circuit for the implementation of FIR filter using Distributed arithmetic algorithm. It is a multiplier less FIR filter. The LUT can be subdivided into a number of LUT to reduce the memory usage of the LUT for higher order filter. Analysis on the performance of various filter orders with different address length is done using Xilinx 14.5 synthesis tool. The proposed design provides less latency, less memory usage and high throughput.

Keywords: finite impulse response, distributed arithmetic, field programmable gate array, look-up table

Procedia PDF Downloads 432
8930 Coherent All-Fiber and Polarization Maintaining Source for CO2 Range-Resolved Differential Absorption Lidar

Authors: Erwan Negre, Ewan J. O'Connor, Juha Toivonen

Abstract:

The need for CO2 monitoring technologies grows simultaneously with the worldwide concerns regarding environmental challenges. To that purpose, we developed a compact coherent all-fiber ranged-resolved Differential Absorption Lidar (RR-DIAL). It has been designed along a tunable 2x1fiber optic switch set to a frequency of 1 Hz between two Distributed FeedBack (DFB) lasers emitting in the continuous-wave mode at 1571.41 nm (absorption line of CO2) and 1571.25 nm (CO2 absorption-free line), with linewidth and tuning range of respectively 1 MHz and 3 nm over operating wavelength. A three stages amplification through Erbium and Erbium-Ytterbium doped fibers coupled to a Radio Frequency (RF) driven Acousto-Optic Modulator (AOM) generates 100 ns pulses at a repetition rate from 10 to 30 kHz with a peak power up to 2.5 kW and a spatial resolution of 15 m, allowing fast and highly resolved CO2 profiles. The same afocal collection system is used for the output of the laser source and the backscattered light which is then directed to a circulator before being mixed with the local oscillator for heterodyne detection. Packaged in an easily transportable box which also includes a server and a Field Programmable Gate Array (FPGA) card for on-line data processing and storing, our setup allows an effective and quick deployment for versatile in-situ analysis, whether it be vertical atmospheric monitoring, large field mapping or sequestration site continuous oversight. Setup operation and results from initial field measurements will be discussed.

Keywords: CO2 profiles, coherent DIAL, in-situ atmospheric sensing, near infrared fiber source

Procedia PDF Downloads 107
8929 Improved Hash Value Based Stream CipherUsing Delayed Feedback with Carry Shift Register

Authors: K. K. Soundra Pandian, Bhupendra Gupta

Abstract:

In the modern era, as the application data’s are massive and complex, it needs to be secured from the adversary attack. In this context, a non-recursive key based integrated spritz stream cipher with the circulant hash function using delayed feedback with carry shift register (d-FCSR) is proposed in this paper. The novelty of this proposed stream cipher algorithm is to engender the improved keystream using d-FCSR. The proposed algorithm is coded using Verilog HDL to produce dynamic binary key stream and implemented on commercially available FPGA device Virtex 5 xc5vlx110t-2ff1136. The implementation of stream cipher using d-FCSR on the FPGA device operates at a maximum frequency of 60.62 MHz. It achieved the data throughput of 492 Mbps and improved in terms of efficiency (throughput/area) compared to existing techniques. This paper also briefs the cryptanalysis of proposed circulant hash value based spritz stream cipher using d-FCSR is against the adversary attack on a hardware platform for the hardware based cryptography applications.

Keywords: cryptography, circulant function, field programmable gated array, hash value, spritz stream cipher

Procedia PDF Downloads 223
8928 Approximate-Based Estimation of Single Event Upset Effect on Statistic Random-Access Memory-Based Field-Programmable Gate Arrays

Authors: Mahsa Mousavi, Hamid Reza Pourshaghaghi, Mohammad Tahghighi, Henk Corporaal

Abstract:

Recently, Statistic Random-Access Memory-based (SRAM-based) Field-Programmable Gate Arrays (FPGAs) are widely used in aeronautics and space systems where high dependability is demanded and considered as a mandatory requirement. Since design’s circuit is stored in configuration memory in SRAM-based FPGAs; they are very sensitive to Single Event Upsets (SEUs). In addition, the adverse effects of SEUs on the electronics used in space are much higher than in the Earth. Thus, developing fault tolerant techniques play crucial roles for the use of SRAM-based FPGAs in space. However, fault tolerance techniques introduce additional penalties in system parameters, e.g., area, power, performance and design time. In this paper, an accurate estimation of configuration memory vulnerability to SEUs is proposed for approximate-tolerant applications. This vulnerability estimation is highly required for compromising between the overhead introduced by fault tolerance techniques and system robustness. In this paper, we study applications in which the exact final output value is not necessarily always a concern meaning that some of the SEU-induced changes in output values are negligible. We therefore define and propose Approximate-based Configuration Memory Vulnerability Factor (ACMVF) estimation to avoid overestimating configuration memory vulnerability to SEUs. In this paper, we assess the vulnerability of configuration memory by injecting SEUs in configuration memory bits and comparing the output values of a given circuit in presence of SEUs with expected correct output. In spite of conventional vulnerability factor calculation methods, which accounts any deviations from the expected value as failures, in our proposed method a threshold margin is considered depending on user-case applications. Given the proposed threshold margin in our model, a failure occurs only when the difference between the erroneous output value and the expected output value is more than this margin. The ACMVF is subsequently calculated by acquiring the ratio of failures with respect to the total number of SEU injections. In our paper, a test-bench for emulating SEUs and calculating ACMVF is implemented on Zynq-7000 FPGA platform. This system makes use of the Single Event Mitigation (SEM) IP core to inject SEUs into configuration memory bits of the target design implemented in Zynq-7000 FPGA. Experimental results for 32-bit adder show that, when 1% to 10% deviation from correct output is considered, the counted failures number is reduced 41% to 59% compared with the failures number counted by conventional vulnerability factor calculation. It means that estimation accuracy of the configuration memory vulnerability to SEUs is improved up to 58% in the case that 10% deviation is acceptable in output results. Note that less than 10% deviation in addition result is reasonably tolerable for many applications in approximate computing domain such as Convolutional Neural Network (CNN).

Keywords: fault tolerance, FPGA, single event upset, approximate computing

Procedia PDF Downloads 160
8927 Design of SAE J2716 Single Edge Nibble Transmission Digital Sensor Interface for Automotive Applications

Authors: Jongbae Lee, Seongsoo Lee

Abstract:

Modern sensors often embed small-size digital controller for sensor control, value calibration, and signal processing. These sensors require digital data communication with host microprocessors, but conventional digital communication protocols are too heavy for price reduction. SAE J2716 SENT (single edge nibble transmission) protocol transmits direct digital waveforms instead of complicated analog modulated signals. In this paper, a SENT interface is designed in Verilog HDL (hardware description language) and implemented in FPGA (field-programmable gate array) evaluation board. The designed SENT interface consists of frame encoder/decoder, configuration register, tick period generator, CRC (cyclic redundancy code) generator/checker, and TX/RX (transmission/reception) buffer. Frame encoder/decoder is implemented as a finite state machine, and it controls whole SENT interface. Configuration register contains various parameters such as operation mode, tick length, CRC option, pause pulse option, and number of nibble data. Tick period generator generates tick signals from input clock. CRC generator/checker generates or checks CRC in the SENT data frame. TX/RX buffer stores transmission/received data. The designed SENT interface can send or receives digital data in 25~65 kbps at 3 us tick. Synthesized in 0.18 um fabrication technologies, it is implemented about 2,500 gates.

Keywords: digital sensor interface, SAE J2716, SENT, verilog HDL

Procedia PDF Downloads 264
8926 Design and Implementation of A 10-bit SAR ADC with A Programmable Reference

Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

Abstract:

This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. A single ended 38.5 kS/s 10-bit programmable reference SAR ADC was proposed and implemented in a 0.35 µm CMOS technology and consumed less than 7.5 mW power with a 3 V supply.

Keywords: successive approximation register analog-to-digital converter, SAR ADC, resistive DAC, programmable reference

Procedia PDF Downloads 485
8925 FPGA Based IIR Filter Design Using MAC Algorithm

Authors: Rajesh Mehra, Bharti Thakur

Abstract:

In this paper, an IIR filter has been designed and simulated on an FPGA. The implementation is based on MAC algorithm which uses multiply-and-accumulate operations IIR filter design implementation. Parallel Pipelined structure is used to implement the proposed IIR Filter taking optimal advantage of the look up table of the FPGA device. The designed filter has been synthesized on DSP slice based FPGA to perform multiplier function of MAC unit. The DSP slices are useful to enhance the speed performance. The developed IIR filter is designed and simulated with Matlab and synthesized with Xilinx Synthesis Tool (XST), and implemented on Virtex 5 and Spartan 3 ADSP FPGA devices. The IIR filter implemented on Virtex 5 FPGA can operate at an estimated frequency of 81.5 MHz as compared to 40.5 MHz in case of Spartan 3 ADSP FPGA. The Virtex 5 based implementation also consumes less slices and slice flip flops of target FPGA in comparison to Spartan 3 ADSP based implementation to provide cost effective solution for signal processing applications.

Keywords: Butterworth filter, DSP, IIR, MAC, FPGA

Procedia PDF Downloads 356
8924 Spin-Dependent Transport Signatures of Bound States: From Finger to Top Gates

Authors: Yun-Hsuan Yu, Chi-Shung Tang, Nzar Rauf Abdullah, Vidar Gudmundsson

Abstract:

Spin-orbit gap feature in energy dispersion of one-dimensional devices is revealed via strong spin-orbit interaction (SOI) effects under Zeeman field. We describe the utilization of a finger-gate or a top-gate to control the spin-dependent transport characteristics in the SOI-Zeeman influenced split-gate devices by means of a generalized spin-mixed propagation matrix method. For the finger-gate system, we find a bound state in continuum for incident electrons within the ultra-low energy regime. For the top-gate system, we observe more bound-state features in conductance associated with the formation of spin-associated hole-like or electron-like quasi-bound states around band thresholds, as well as hole bound states around the reverse point of the energy dispersion. We demonstrate that the spin-dependent transport behavior of a top-gate system is similar to that of a finger-gate system only if the top-gate length is less than the effective Fermi wavelength.

Keywords: spin-orbit, zeeman, top-gate, finger-gate, bound state

Procedia PDF Downloads 234
8923 Reconfigurable Efficient IIR Filter Design Using MAC Algorithm

Authors: Rajesh Mehra

Abstract:

In this paper an IIR filter has been designed and simulated on an FPGA. The implementation is based on MAC algorithm which uses multiply-and-accumulate operations IIR filter design implementation. Parallel Pipelined structure is used to implement the proposed IIR Filter taking optimal advantage of the look up table of the FPGA device. The designed filter has been synthesized on DSP slice based FPGA to perform multiplier function of MAC unit. The DSP slices are useful to enhance the speed performance. The developed IIR filter is designed and simulated with MATLAB and synthesized with Xilinx Synthesis Tool (XST), and implemented on Virtex 5 and Spartan 3 ADSP FPGA devices. The IIR filter implemented on Virtex 5 FPGA can operate at an estimated frequency of 81.5 MHz as compared to 40.5 MHz in case of Spartan 3 ADSP FPGA. The Virtex 5 based implementation also consumes less slices and slice flip flops of target FPGA in comparison to Spartan 3 ADSP based implementation to provide cost effective solution for signal processing applications.

Keywords: butterworth, DSP, IIR, MAC, FPGA

Procedia PDF Downloads 328
8922 Study on Discontinuity Properties of Phased-Array Ultrasound Transducer Affecting to Sound Pressure Fields Pattern

Authors: Tran Trong Thang, Nguyen Phan Kien, Trinh Quang Duc

Abstract:

The phased-array ultrasound transducer types are utilities for medical ultrasonography as well as optical imaging. However, their discontinuity characteristic limits the applications due to the artifacts contaminated into the reconstructed images. Because of the effects of the ultrasound pressure field pattern to the echo ultrasonic waves as well as the optical modulated signal, the side lobes of the focused ultrasound beam induced by discontinuity of the phased-array ultrasound transducer might the reason of the artifacts. In this paper, a simple method in approach of numerical simulation was used to investigate the limitation of discontinuity of the elements in phased-array ultrasound transducer and their effects to the ultrasound pressure field. Take into account the change of ultrasound pressure field patterns in the conditions of variation of the pitches between elements of the phased-array ultrasound transducer, the appropriated parameters for phased-array ultrasound transducer design were asserted quantitatively.

Keywords: phased-array ultrasound transducer, sound pressure pattern, discontinuous sound field, numerical visualization

Procedia PDF Downloads 475
8921 Graphene Transistor Employing Multilayer Hexagonal Boron Nitride as Substrate and Gate Insulator

Authors: Nikhil Jain, Bin Yu

Abstract:

We explore the potential of using ultra-thin hexagonal boron nitride (h-BN) as both supporting substrate and gate dielectric for graphene-channel field effect transistors (GFETs). Different from commonly used oxide-based dielectric materials which are typically amorphous, very rough in surface, and rich with surface traps, h-BN is layered insulator free of dangling bonds and surface states, featuring atomically smooth surface. In a graphene-channel-last device structure with local buried metal gate electrode (TiN), thin h-BN multilayer is employed as both supporting “substrate” and gate dielectric for graphene active channel. We observed superior carrier mobility and electrical conduction, significantly improved from that in GFETs with SiO2 as substrate/gate insulator. In addition, we report excellent dielectric behavior of layered h-BN, including ultra-low leakage current and high critical electric field for breakdown.

Keywords: graphene, field-effect transistors, hexagonal boron nitride, dielectric strength, tunneling

Procedia PDF Downloads 402
8920 Validity of a Timing System in the Alpine Ski Field: A Magnet-Based Timing System Using the Magnetometer Built into an Inertial Measurement Units

Authors: Carla Pérez-Chirinos Buxadé, Bruno Fernández-Valdés, Mónica Morral-Yepes, Sílvia Tuyà Viñas, Josep Maria Padullés Riu, Gerard Moras Feliu

Abstract:

There is a long way to explore all the possible applications inertial measurement units (IMUs) have in the sports field. The aim of this study was to evaluate the validity of a new application on the use of these wearable sensors, specifically it was to evaluate a magnet-based timing system (M-BTS) for timing gate-to-gate in an alpine ski slalom using the magnetometer embedded in an IMU. This was a validation study. The criterion validity of time measured by the M-BTS was assessed using the 95% error range against actual time obtained from photocells. The experiment was carried out with first-and second-year junior skiers performing a ski slalom on a ski training slope. Eight alpine skiers (17.4 ± 0.8 years, 176.4 ± 4.9 cm, 67.7 ± 2.0 kg, 128.8 ± 26.6 slalom FIS-Points) participated in the study. An IMU device was attached to the skier’s lower back. Skiers performed a 40-gate slalom from which four gates were assessed. The M-BTS consisted of placing four bar magnets buried into the snow surface on the inner side of each gate’s turning pole; the magnetometer built into the IMU detected the peak-shaped magnetic field when passing near the magnets at a certain speed. Four magnetic peaks were detected. The time compressed between peaks was calculated. Three inter-gate times were obtained for each system: photocells and M-BTS. The total time was defined as the time sum of the inter-gate times. The 95% error interval for the total time was 0.050 s for the ski slalom. The M-BTS is valid for timing gate-to-gate in an alpine ski slalom. Inter-gate times can provide additional data for analyzing a skier’s performance, such as asymmetries between left and right foot.

Keywords: gate crossing time, inertial measurement unit, timing system, wearable sensor

Procedia PDF Downloads 157
8919 Design and Field Programmable Gate Array Implementation of Radio Frequency Identification for Boosting up Tag Data Processing

Authors: G. Rajeshwari, V. D. M. Jabez Daniel

Abstract:

Radio Frequency Identification systems are used for automated identification in various applications such as automobiles, health care and security. It is also called as the automated data collection technology. RFID readers are placed in any area to scan large number of tags to cover a wide distance. The placement of the RFID elements may result in several types of collisions. A major challenge in RFID system is collision avoidance. In the previous works the collision was avoided by using algorithms such as ALOHA and tree algorithm. This work proposes collision reduction and increased throughput through reading enhancement method with tree algorithm. The reading enhancement is done by improving interrogation procedure and increasing the data handling capacity of RFID reader with parallel processing. The work is simulated using Xilinx ISE 14.5 verilog language. By implementing this in the RFID system, we can able to achieve high throughput and avoid collision in the reader at a same instant of time. The overall system efficiency will be increased by implementing this.

Keywords: antenna, anti-collision protocols, data management system, reader, reading enhancement, tag

Procedia PDF Downloads 265
8918 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100 nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

Procedia PDF Downloads 503
8917 Localization of Near Field Radio Controlled Unintended Emitting Sources

Authors: Nurbanu Guzey, S. Jagannathan

Abstract:

Locating radio controlled (RC) devices using their unintended emissions has a great interest considering security concerns. Weak nature of these emissions requires near field localization approach since it is hard to detect these signals in far field region of array. Instead of only angle estimation, near field localization also requires range estimation of the source which makes this method more complicated than far field models. Challenges of locating such devices in a near field region and real time environment are analyzed in this paper. An ESPRIT like near field localization scheme is utilized for both angle and range estimation. 1-D search with symmetric subarrays is provided. Two 7 element uniform linear antenna arrays (ULA) are employed for locating RC source. Experiment results of location estimation for one unintended emitting walkie-talkie for different positions are given.

Keywords: localization, angle of arrival (AoA), range estimation, array signal processing, ESPRIT, Uniform Linear Array (ULA)

Procedia PDF Downloads 493
8916 Implementation of a Method of Crater Detection Using Principal Component Analysis in FPGA

Authors: Izuru Nomura, Tatsuya Takino, Yuji Kageyama, Shin Nagata, Hiroyuki Kamata

Abstract:

We propose a method of crater detection from the image of the lunar surface captured by the small space probe. We use the principal component analysis (PCA) to detect craters. Nevertheless, considering severe environment of the space, it is impossible to use generic computer in practice. Accordingly, we have to implement the method in FPGA. This paper compares FPGA and generic computer by the processing time of a method of crater detection using principal component analysis.

Keywords: crater, PCA, eigenvector, strength value, FPGA, processing time

Procedia PDF Downloads 525
8915 Near Field Focusing Behaviour of Airborne Ultrasonic Phased Arrays Influenced by Airflows

Authors: D. Sun, T. F. Lu, A. Zander, M. Trinkle

Abstract:

This paper investigates the potential use of airborne ultrasonic phased arrays for imaging in outdoor environments as a means of overcoming the limitations experienced by kinect sensors, which may fail to work in the outdoor environments due to the oversaturation of the infrared photo diodes. Ultrasonic phased arrays have been well studied for static media, yet there appears to be no comparable examination in the literature of the impact of a flowing medium on the focusing behaviour of near field focused ultrasonic arrays. This paper presents a method for predicting the sound pressure fields produced by a single ultrasound element or an ultrasonic phased array influenced by airflows. The approach can be used to determine the actual focal point location of an array exposed in a known flow field. From the presented simulation results based upon this model, it can be concluded that uniform flows in the direction orthogonal to the acoustic propagation have a noticeable influence on the sound pressure field, which is reflected in the twisting of the steering angle of the array. Uniform flows in the same direction as the acoustic propagation have negligible influence on the array. For an array impacted by a turbulent flow, determining the location of the focused sound field becomes difficult due to the irregularity and continuously changing direction and the speed of the turbulent flow. In some circumstances, ultrasonic phased arrays impacted by turbulent flows may not be capable of producing a focused sound field.

Keywords: airborne, airflow, focused sound field, ultrasonic phased array

Procedia PDF Downloads 320
8914 Performance Improvement of SOI-Tri Gate FinFET Transistor Using High-K Dielectric with Metal Gate

Authors: Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza

Abstract:

SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, SOI-TRI Gate FinFET, high-K dielectric, Silvaco software

Procedia PDF Downloads 318
8913 Design of a Pulse Generator Based on a Programmable System-on-Chip (PSoC) for Ultrasonic Applications

Authors: Pedro Acevedo, Carlos Díaz, Mónica Vázquez, Joel Durán

Abstract:

This paper describes the design of a pulse generator based on the Programmable System-on-Chip (PSoC) module. In this module, using programmable logic is possible to implement different pulses which are required for ultrasonic applications, either in a single channel or multiple channels. This module can operate with programmable frequencies from 3-74 MHz; its programming may be versatile covering a wide range of ultrasonic applications. It is ideal for low-power ultrasonic applications where PZT or PVDF transducers are used.

Keywords: PSoC, pulse generator, PVDF, ultrasonic transducer

Procedia PDF Downloads 255
8912 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors

Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: gate capacitance, AlGaN/GaN, HEMTs, quantum capacitance, centroid capacitance

Procedia PDF Downloads 369
8911 Electromagnetic Source Direction of Arrival Estimation via Virtual Antenna Array

Authors: Meiling Yang, Shuguo Xie, Yilong Zhu

Abstract:

Nowadays, due to diverse electric products and complex electromagnetic environment, the localization and troubleshooting of the electromagnetic radiation source is urgent and necessary especially on the condition of far field. However, based on the existing DOA positioning method, the system or devices are complex, bulky and expensive. To address this issue, this paper proposes a single antenna radiation source localization method. A single antenna moves to form a virtual antenna array combined with DOA and MUSIC algorithm to position accurately, meanwhile reducing the cost and simplify the equipment. As shown in the results of simulations and experiments, the virtual antenna array DOA estimation modeling is correct and its positioning is credible.

Keywords: virtual antenna array, DOA, localization, far field

Procedia PDF Downloads 342
8910 FPGA Implementation of RSA Encryption Algorithm for E-Passport Application

Authors: Khaled Shehata, Hanady Hussien, Sara Yehia

Abstract:

Securing the data stored on E-passport is a very important issue. RSA encryption algorithm is suitable for such application with low data size. In this paper the design and implementation of 1024 bit-key RSA encryption and decryption module on an FPGA is presented. The module is verified through comparing the result with that obtained from MATLAB tools. The design runs at a frequency of 36.3 MHz on Virtex-5 Xilinx FPGA. The key size is designed to be 1024-bit to achieve high security for the passport information. The whole design is achieved through VHDL design entry which makes it a portable design and can be directed to any hardware platform.

Keywords: RSA, VHDL, FPGA, modular multiplication, modular exponential

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8909 Carbon Nanotube Field Effect Transistor - a Review

Authors: P. Geetha, R. S. D. Wahida Banu

Abstract:

The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques.

Keywords: array of channels, carbon nanotube field effect transistor, double gate transistor, gate wrap around transistor, modelling, multi-walled CNT, single-walled CNT

Procedia PDF Downloads 287
8908 3D Simulation and Modeling of Magnetic-Sensitive on n-type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DGMOSFET)

Authors: M. Kessi

Abstract:

We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology.

Keywords: single-gate MOSFET, magnetic field, hall field, Lorentz force

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8907 Low Voltage and High Field-Effect Mobility Thin Film Transistor Using Crystalline Polymer Nanocomposite as Gate Dielectric

Authors: Debabrata Bhadra, B. K. Chaudhuri

Abstract:

The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

Procedia PDF Downloads 218
8906 Area Efficient Carry Select Adder Using XOR Gate Design

Authors: Mahendrapal Singh Pachlaniya, Laxmi Kumre

Abstract:

The AOI (AND – OR- INVERTER) based design of XOR gate is proposed in this paper with less number of gates. This new XOR gate required four basic gates and basic gate include only AND, OR, Inverter (AOI). Conventional XOR gate required five basic gates. Ripple Carry Adder (RCA) used in parallel addition but propagation delay time is large. RCA replaced with Carry Select Adder (CSLA) to reduce propagation delay time. CSLA design with dual RCA considering carry = ‘0’ and carry = ‘1’, so it is not an area efficient adder. To make area efficient, modified CSLA is designed with single RCA considering carry = ‘0’ and another RCA considering carry = ‘1’ replaced with Binary to Excess 1 Converter (BEC). Now replacement of conventional XOR gate by new design of XOR gate in modified CSLA reduces much area compared to regular CSLA and modified CSLA.

Keywords: CSLA, BEC, XOR gate, area efficient

Procedia PDF Downloads 334
8905 Transient Performance Analysis of Gate Inside Junctionless Transistor (GI-JLT)

Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside Junctionless Transistor (GIJLT)has been evaluated. 3-D Bohm Quantum Potential (BQP)transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor(TGF) and unity gain cut-off frequency (fT) and subthreshold slope (SS) of the GI-JLT and Gate-all-around junctionless transistor(GAA-JLT) have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: gate-inside junctionless transistor GI-JLT, gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product

Procedia PDF Downloads 557
8904 Environmental Impact of Gas Field Decommissioning

Authors: Muhammad Ahsan

Abstract:

The effective decommissioning of oil and gas fields and related assets is one of the most important challenges facing the oil and gas industry today and in the future. Decommissioning decisions can no longer be avoided by the operators and the industry as a whole. Decommissioning yields no return on investment and carries significant regulatory liabilities. The main objective of this paper is to provide an approach and mechanism for the estimation of emissions associated with decommissioning of Oil and Gas fields. The model uses gate to gate approach and considers field life from development phase up to asset end life. The model incorporates decommissioning processes which includes; well plugging, plant dismantling, wellhead, and pipeline dismantling, cutting and temporary fabrication, new manufacturing from raw material and recycling of metals. The results of the GHG emissions during decommissioning phase are 2.31x10-2 Kg CO2 Eq. per Mcf of the produced natural gas. Well plug and abandonment evolved to be the most GHG emitting activity with 84.7% of total field decommissioning operational emissions.

Keywords: LCA (life cycle analysis), gas field, decommissioning, emissions

Procedia PDF Downloads 163
8903 Performance Analysis of BPJLT with Different Gate and Spacer Materials

Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

Procedia PDF Downloads 397
8902 The Galactic Magnetic Field in the Light of Starburst-Generated Ultrahigh-Energy Cosmic Rays

Authors: Luis A. Anchordoqui, Jorge F. Soriano, Diego F. Torres

Abstract:

Auger data show evidence for a correlation between ultrahigh-energy cosmic rays (UHECRs) and nearby starburst galaxies. This intriguing correlation is consistent with data collected by the Telescope Array, which have revealed a much more pronounced directional 'hot spot' in arrival directions not far from the starburst galaxy M82. In this work, we assume starbursts are sources of UHECRs, and we investigate the prospects to use the observed distribution of UHECR arrival directions to constrain galactic magnetic field models. We show that if the Telescope Array hot spot indeed originates on M82, UHECR data would place a strong constraint on the turbulent component of the galactic magnetic field.

Keywords: galactic magnetic field, Pierre Auger observatory, telescope array, ultra-high energy cosmic rays

Procedia PDF Downloads 119