Search results for: dilute semiconductor

Authors: Soroush Hooshyar, Mohamadali Masoudian, Natalie Germann

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Many soft materials such as polymer solutions can develop localized bands with different shear rates, which are known as shear bands. Using the generalized bracket approach of nonequilibrium thermodynamics, we recently developed a new two-fluid model to study shear banding for semi-dilute polymer solutions. The two-fluid approach is an appropriate means for describing diffusion processes such as Fickian diffusion and stress-induced migration. In this approach, it is assumed that the local gradients in concentration and, if accounted for, also stress generate a nontrivial velocity difference between the components. Since the differential velocity is treated as a state variable in our model, the implementation of the boundary conditions arising from the derivative diffusive terms is straightforward. Our model is a good candidate for benchmark simulations because of its simplicity. We analyzed its behavior in cylindrical Couette flow, a rectilinear channel flow, and a 4:1 planar contraction flow. The latter problem was solved using the OpenFOAM finite volume package and the impact of shear banding on the lip and salient vortices was investigated. For the other smooth geometries, we employed a standard Chebyshev pseudospectral collocation method. The results showed that the steady-state solution is unique with respect to initial conditions, deformation history, and the value of the diffusivity constant. However, smaller the value of the diffusivity constant is, the more time it takes to reach the steady state.

Keywords: nonequilibrium thermodynamics, planar contraction, polymer solutions, shear banding, two-fluid approach

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Authors: Kiran Abdullah, Yanli Chen

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An amphiphilic mixed (phthalocyaninato) (porphyrinato) europium triple-decker complex Eu₂(Pc)₂(TPyP) has been synthesized and characterized. Introducing electron-withdrawing pyridyl substituents onto the meso-position of porphyrin ring in the triple-decker to ensure the sufficient hydrophilicity and suitable HOMO and LUMO energy levels and thus successfully realize amphiphilic ambipolar organic semiconductor. Importantly, high sensitive, reproducible p-type and n-type responses towards NH₃ andNO₂ respectively, based on the self-assembled film of the Eu₂(Pc)₂(TPyP) fabricated by a simple solution-based Quasi–Langmuir–Shäfer (QLS) method, have been first revealed. The good conductivity and crystallinity for the QLS film of Eu₂(Pc)₂(TPyP) render it excellent sensing property. This complex is sensitive to both electron-donating NH₃ gas in 5–30 ppm range and electron-accepting NO₂ gas 400–900 ppb range. Due to uniform nano particles there exist effective intermolecular interaction between triple decker molecules. This is the best result of Phthalocyanine–based chemical sensors at room temperature. Furthermore, the responses of the QLS film are all linearly correlated to both NH₃ and NO₂ with excellent sensitivity of 0.04% ppm⁻¹ and 31.9 % ppm⁻¹, respectively, indicating the great potential of semiconducting tetrapyrrole rare earth triple-decker compounds in the field of chemical sensors.

Keywords: ambipolar semiconductor, gas sensing, mixed (phthalocyaninato) (porphyrinato) rare earth complex, Self-assemblies

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Authors: Rohana Abdullah, Md Nizam Abd Rahman, Seri Rahayu Kamat

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Operator efficiency aspect is gaining importance in ensuring optimized usage of resources especially in the semi-automated manufacturing environment. This paper addresses a case study done to solve operator efficiency and line balancing issue at a semiconductor assembly and test manufacturing. A Man-to-Machine (M2M) work study technique is used to study operator current utilization and determine the optimum allocation of the operators to the machines. Critical factors such as operator activity, activity frequency and operator competency level are considered to gain insight on the parameters that affects the operator utilization. Equipment standard time and overall equipment efficiency (OEE) information are also gathered and analyzed to achieve a balanced and optimized production.

Keywords: operator efficiency, optimized production, line balancing, industrial and manufacturing engineering

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Authors: W. El-Alami, J. Araña, O. González Díaz, J. M. Doña Rodríguez

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The efficiency of the semiconductor TiO₂ needs to be improved to be an effective tool for pollutant removal. To improve the efficiency of this semiconductor, it is necessary to deepen the knowledge of the processes that take place on its surface. In this sense, the deactivation of the catalyst is one of the aspects considered relevant. In order to study this point, the processes of deactivation of TiO₂ during the gas phase degradation of ethanol have been studied. For this, catalysts with only the anatase phase (SA and PC100) and catalysts with anatase and rutile phases (P25 and P90) have been selected. In order to force the deactivation processes, different cycles have been performed, adding ethanol gas but avoiding the degradation of acetates to determine their effect on the process. The surface concentration of fluorine on the catalysts was semi-quantitatively determined by EDAX analysis. The photocatalytic experiments were done with four commercial catalysts (P25, SA, P90, and PC100) and the two fluoride catalysts indicated above. The interaction and photocatalytic degradation of ethanol were followed by Fourier transform infrared spectroscopy (FTIR). EDAX analysis has revealed the presence of sodium on the surface of fluorinated catalysts. In FTIR studies, it has been observed that the acetates adsorbed on the anatase phase in P25 and P90 give rise to electron transfer to surface traps that modify the electronic states of the semiconductor. These deactivation studies have also been carried out with fluorinated P25 and SA catalysts (F-P25 and F-SA) which have observed similar electron transfers but in the opposite direction during illumination. In these materials, it has been observed that the electrons present in the surface traps, as a consequence of the interaction Ti-F, react with the holes, causing a change in the electronic states of the semiconductor. In this way, deactivated states of these materials have been detected by different electron transfer routes. It has been identified that acetates produced from the degradation of ethanol in P25 and P90 are probably hydrated on the surface of the rutile phase. In the catalysts with only the anatase phase (SA and PC100), the deactivation is immediate if the acetates are not removed before adsorbing ethanol again. In F-P25 and F-SA has been observed that the acetates formed react with the sodium ions present on the surface and not with the Ti atoms because they are interacting with the fluorine.

Keywords: photocatalytic degradation, ethanol, TiO₂, deactivation process, F-P25

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Authors: Chyuan Haur Kao, Hsiang Chen, Yu Sheng Tsai, Chen Hao Hung, Yu Shan Lee

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Dielectric electrolyte-insulator-semiconductor sensing membranes-based biosensors have been intensively investigated because of their simple fabrication, low cost, and fast response. However, to enhance their sensing performance, it is worthwhile to explore alternative materials, distinct processes, and novel treatments. An ISFET can be viewed as a variation of MOSFET with the dielectric oxide layer as the sensing membrane. Then, modulation on the work function of the gate caused by electrolytes in various ion concentrations could be used to calculate the ion concentrations. Recently, owing to the advancement of CMOS technology, some high dielectric materials substrates as the sensing membranes of electrolyte-insulator-semiconductor (EIS) structures. The EIS with a stacked-layer of SiO₂ layer between the sensing membrane and the silicon substrate exhibited a high pH sensitivity and good long-term stability. IGZO is a wide-bandgap (~3.15eV) semiconductor of the III-VI semiconductor group with several preferable properties, including good transparency, high electron mobility, wide band gap, and comparable with CMOS technology. IGZO was sputtered by reactive radio frequency (RF) on a p-type silicon wafer with various gas ratios of Ar:O₂ and was treated with rapid thermal annealing in O₂ ambient. The sensing performance, including sensitivity, hysteresis, and drift rate was measured and XRD, XPS, and AFM analyses were also used to study the material properties of the IGZO membrane. Moreover, IGZO was used as a sensing membrane in dielectric EIS bio-sensor structures. In addition to traditional pH sensing capability, detection for concentrations of Na+, K+, urea, glucose, and creatinine was performed. Moreover, post rapid thermal annealing (RTA) treatment was confirmed to improve the material properties and enhance the multi-analyte sensing capability for various ions or chemicals in solutions. In this study, the IGZO sensing membrane with annealing in O₂ ambient exhibited a higher sensitivity, higher linearity, higher H+ selectivity, lower hysteresis voltage and lower drift rate. Results indicate that the IGZO dielectric sensing membrane on the EIS structure is promising for future bio-medical device applications.

Keywords: dielectric sensing membrane, IGZO, hydrogen ion, plasma, rapid thermal annealing

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Authors: Hendradi Hardhienata, Tony Sumaryada, Sri Setyaningsih

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Current progress in the field of nonlinear optics has enabled precise surface characterization in semiconductor materials. Nonlinear optical techniques are favorable due to their nondestructive measurement and ability to work in nonvacuum and ambient conditions. The advance of the bond hyperpolarizability models opens a wide range of nanoscale surface investigation including the possibility to detect molecular orientation at the surface of silicon and zincblende semiconductors, investigation of electric field induced second harmonic fields at the semiconductor interface, detection of surface impurities, and very recently, study surface defects such as twin boundary in wurtzite semiconductors. In this work, we show using nonlinear optical techniques, e.g. nonlinear bond models how arbitrary polarization of the incoming electric field in Rotational Anisotropy Spectroscopy experiments can provide more information regarding the origin of the nonlinear sources in zincblende and wurtzite semiconductor structure. In addition, using hyperpolarizability consideration, we describe how the nonlinear susceptibility tensor describing SHG can be well modelled using only few parameter because of the symmetry of the bonds. We also show how the third harmonic intensity feature shows considerable changes when the incoming field polarization angle is changed from s-polarized to p-polarized. We also propose a method how to investigate surface reconstruction and defects in wurtzite and zincblende structure at the nanoscale level.

Keywords: surface characterization, bond model, rotational anisotropy spectroscopy, effective hyperpolarizability

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Authors: Qaiser Javed, Ahmad Azeem

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Salinity and water scarcity are major environmental problems which are limiting the agricultural production. This research was conducted to construct a model to find out appropriate regime to dilute saline water based on physiological and electrophysiological properties of Brassica napus L., and Orychophragmus violaceus (L.). Plants were treated under salt-stressed concentrations of NaCl (NL₁: 2.5, NL₂: 5, NL₃: 10; gL⁻¹), Na₂SO₄ (NO₁: 2.5, NO₂: 5, NO₃: 10; gL⁻¹), and mixed salt concentration (MX₁: NL₁+ NO₃; MX₂: NL₃+ NO₁; MX₃: NL₂+ NO₂; gL⁻¹) and 0 as control, followed by re-watering. Growth, physiological and electrophysiology traits were highly restricted under high salt concentration levels at NL₃, NO₃, MX₁, and MX₂, respectively. However, during the rewatering phase, growth, electrophysiological, and physiological parameters were recovered well. Consequently, the increase in net photosynthetic rate was noted under moderate stress condition which was 44.13, 37.07, and 43.01%, respectively in Orychophragmus violaceus (L.) and 44.94%, 53.45%, and 63.04%, respectively were found in Brassica napus L. According to the results, the best dilution point was 5–2.5% for NaCl and Na₂SO₄ alternatively, whereas it was 10–0.0% for the mixture of salts. Therefore, the effect of salinity in O. violaceus and B. napus may also be reduced effectively by dilution of saline irrigation. It would be a better approach to utilize dilute saline water for irrigation instead of applies direct saline water to plant. This study provides new insight in the field of agricultural engineering to plan irrigation scheduling considering the crop ability to salt tolerance and irrigation water use efficiency by apply specific quantity of irrigation calculated based on the salt dilution point. It would be helpful to balance between irrigation amount and optimum crop water consumption in salt-affected regions and to utilize saline water in order to safe freshwater resources.

Keywords: dilution model, plant growth traits, re-watering, salt stress

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Authors: Sibani Bisoyi, Ute Zschieschang, Alexander Hoyer, Hagen Klauk

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Abstract— Organic thin-film transistors (TFTs) have great potential to be used for various applications such as flexible displays or sensors. For some of these applications, the TFTs must be able to withstand temperatures in excess of 100 °C, for example to permit the integration with devices or components that require high process temperatures, or to make it possible that the devices can be subjected to the standard sterilization protocols required for biomedical applications. In this work, we have investigated how the thermal stability of low-voltage small-molecule semiconductor dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) TFTs is affected by the encapsulation of the TFTs and by the ambient in which the thermal stress is performed. We also studied to which extent the thermal stability of the TFTs depends on the channel length. Some of the TFTs were encapsulated with a layer of vacuum-deposited Teflon, while others were left without encapsulation, and the thermal stress was performed either in nitrogen or in air. We found that the encapsulation with Teflon has virtually no effect on the thermal stability of our TFTs. In contrast, the ambient in which the thermal stress is conducted was found to have a measurable effect, but in a surprising way: When the thermal stress is carried out in nitrogen, the mobility drops to 70% of its initial value at a temperature of 160 °C and to close to zero at 170 °C, whereas when the stress is performed in air, the mobility remains at 75% of its initial value up to a temperature of 160 °C and at 60% up to 180 °C. To understand this behavior, we studied the effect of the thermal stress on the semiconductor thin-film morphology by scanning electron microscopy. While the DNTT films remain continuous and conducting when the heating is carried out in air, the semiconductor morphology undergoes a dramatic change, including the formation of large, thick crystals of DNTT and a complete loss of percolation, when the heating is conducted in nitrogen. We also found that when the TFTs are heated to a temperature of 200 °C in air, all TFTs with a channel length greater than 50 µm are destroyed, while TFTs with a channel length of less than 50 µm survive, whereas when the TFTs are heated to the same temperature (200 °C) in nitrogen, only the TFTs with a channel smaller than 8 µm survive. This result is also linked to the thermally induced changes in the semiconductor morphology.

Keywords: organic thin-film transistors, encapsulation, thermal stability, thin-film morphology

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Authors: Jeong Min Baik

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We present that the electroluminescence (EL) properties and electrical output power of flexible N-face p-type GaN thin films can be tuned by strain-induced piezo-potential generated across the metal-semiconductor-metal structures. Under different staining conditions (convex and concave bending modes), the transport properties of the GaN films can be changed due to the spontaneous polarization of the films. The I-V characteristics with the bending modes show that the convex bending can increase the current across the films by the decrease in the barrier height at the metal-semiconductor contact, increasing the EL intensity of the P-N junction. At convex bending, it is also shown that the flexible p-type GaN films can generate an output voltage of up to 1.0 V, while at concave bending, 0.4 V. The change of the band bending with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. This study has great significance on the practical applications of GaN in optoelectronic devices and nanogenerators under a working environment.

Keywords: GaN, flexible, laser lift-off, nanogenerator

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Authors: B. Bouadjemia, M. Houaria, S. Haida, Y. B. Idriss, A, Akham, M. Matouguia, A. Gasmia, T. Lantria, S. Bentataa

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It have investigated the structural, optoelectronic, elastic and thermodynamic properties of KGeX₃ (X = F, Cl and Br) using the density functional theory (DFT) with generalized gradient approximation (GGA) for potential exchange correlation. The modified Becke-Johnson (mBJ-GGA) potential approximation is also used for calculating the optoelectronic properties of the material.The results show that the band structure of the metalloid halide perovskites KGeX₃ (X = F, Cl and Br) have a semiconductor behavior with direct band gap at R-R direction, the gap energy values for each compound as following: 2.83, 1.27 and 0.79eV respectively. The optical properties, such as real and imaginary parts of the dielectric functions, refractive index, reflectivity and absorption coefficient, are investigated. As results, these compounds are competent candidates for optoelectronic and photovoltaic devices in this range of the energy spectrum.

Keywords: density functional theory (DFT), semiconductor behavior, metalloid halide perovskites, optical propertie and photovoltaic devices

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Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

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We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Chih Chin Yang, Chung Shan Sun

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In this paper, the relationships between professional competences and school curricula in IC design industry are explored. The semi-structured questionnaire survey and focus group interview is the research method. Study participants are graduates of microelectronics engineering professional departments who are currently employed in the IC industry. The IC industries are defined as the electronic component manufacturing industry and optical-electronic component manufacturing industry in the semiconductor industry and optical-electronic material devices, respectively. Study participants selected from IC design industry include IC engineering and electronic & semiconductor engineering. The human training with IC design professional competence in microelectronics engineering professional departments is explored in this research. IC professional competences of human resources in the IC design industry include general intelligence and professional intelligence.

Keywords: IC design, curricula, competence, task, duty

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Authors: Jonghyuk Yoon, Hyoungwoon Song, Youngbae Kim, Eunju Kim

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Recently, with the rapid growth of semiconductor industry, lots of interests have been focused on after treatment system that remove the polluted gas produced from semiconductor manufacturing process, and a wet scrubber is the one of the widely used system. When it comes to mechanism of removing the gas, the polluted gas is removed firstly by chemical reaction in a reactor part. After that, the polluted gas stream is brought into contact with the scrubbing liquid, by spraying it with the liquid. Effective design of the reactor part inside the wet scrubber is highly important since removal performance of the polluted gas in the reactor plays an important role in overall performance and stability. In the present study, a CFD (Computational Fluid Dynamics) analysis was performed to figure out the thermal and flow characteristics inside unit a reactor of wet scrubber. In order to verify the numerical result, temperature distribution of the numerical result at various monitoring points was compared to the experimental result. The average error rates (12~15%) between them was shown and the numerical result of temperature distribution was in good agreement with the experimental data. By using validated numerical method, the effect of the reactor geometry on heat transfer rate was also taken into consideration. Uniformity of temperature distribution was improved about 15%. Overall, the result of present study could be useful information to identify the fluid behavior and thermal performance for various scrubber systems. This project is supported by the ‘R&D Center for the reduction of Non-CO₂ Greenhouse gases (RE201706054)’ funded by the Korea Ministry of Environment (MOE) as the Global Top Environment R&D Program.

Keywords: semiconductor, polluted gas, CFD (Computational Fluid Dynamics), wet scrubber, reactor

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Authors: Faten Adel Ismael Chaqmaqchee

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Optical, electrical and optical-electrical characterisations of surface light emitting VCSOAs devices are reported. The hot electron light emitting and lasing in semiconductor hetero-structure vertical cavity semiconductor optical amplifier (HELLISH VCSOA) device is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels. Ga0.35In0.65N0.02As0.08/GaAs was used as an active material for operation in the 1.3 μm window of the optical communications. The device has undoped Distributed Bragg Reflectors (DBRs) and the current is injected longitudinally, directly into the active layers and does not involve DBRs. Therefore, problems associated with refractive index contrast and current injection through the DBR layers, which are common with the doped DBRs in conventional VCSOAs, are avoided. The highest gain of around 4 dB is obtained for the 1300 nm wavelength operation.

Keywords: HELLISH, VCSOA, GaInNAs, luminescence, gain

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Authors: Takashi Shimizu, Tomoaki Hashimoto

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Recently, crystal growth technologies have made progress by the requirement for the high quality of crystal materials. To control the crystal growth dynamics actively by external forces is useuful for reducing composition non-uniformity. In this study, a control method based on model predictive control using thermal inputs is proposed for crystal growth dynamics of semiconductor materials. The control system of crystal growth dynamics considered here is governed by the continuity, momentum, energy, and mass transport equations. To establish the control method for such thermal fluid systems, we adopt model predictive control known as a kind of optimal feedback control in which the control performance over a finite future is optimized with a performance index that has a moving initial time and terminal time. The objective of this study is to establish a model predictive control method for crystal growth dynamics of semiconductor materials.

Keywords: model predictive control, optimal control, process control, crystal growth

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Authors: Michael Shandalov, Tzvi Templeman, Michael Schmidt, Itzhak Kelson, Eyal Yahel

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We present a new method to produce a model system for the study of radiation damage in non-radioactive materials. The method is based on homogeneously incorporating 228Th ions in PbS thin films using a small volume chemical bath deposition (CBD) technique. The common way to alloy metals with radioactive elements is by melting pure elements, which requires considerable amounts of radioactive material with its safety consequences such as high sample activity. Controlled doping of the thin films with (very) small amounts (100-200ppm) of radioactive elements such as thorium is expected to provide a unique path for studying radiation damage in materials due to decay processes without the need of sealed enclosure. As a first stage, we developed CBD process for controlled doping of PbS thin films (~100 nm thick) with the stable isotope (t1/2~106 years), 232Th. Next, we developed CBD process for controlled doping of PbS thin films with active 228Th isotope. This was achieved by altering deposition parameters such as temperature, pH, reagent concentrations and time. The 228Th-doped films were characterized using X-ray diffraction, which indicated a single phase material. Film morphology and thickness were determined using scanning electron microscopy (SEM). Energy dispersive spectroscopy (EDS) mapping in the analytical transmission electron microscope (A-TEM), X-ray photoelectron spectroscopy (XPS) depth profiles and autoradiography indicated that the Th ions were homogeneously distributed throughout the films, suggesting Pb substitution by Th ions in the crystal lattice. The properties of the PbS (228Th) film activity were investigated by using alpha-spectroscopy and gamma spectroscopy. The resulting films are applicable for isochronal annealing of resistivity measurements and currently under investigation. This work shows promise as a model system for the analysis of dilute defect systems in semiconductor thin films.

Keywords: thin films, doping, radiation damage, chemical bath deposition

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Authors: Elena Petersen, Inna Kornienko, Svetlana Guryeva, Sergey Dobdin, Anatoly Skripal, Andrey Usanov, Dmitry Usanov

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One of the most important unsolved problems in modern medicine is the increase of chronic diseases that lead to organ dysfunction or even complete loss of function. Current methods of treatment do not result in decreased mortality and disability statistics. Currently, the best treatment for many patients is still transplantation of organs and/or tissues. Therefore, finding a way of correct artificial matrix biofabrication in case of limited number of natural organs for transplantation is a critical task. One important problem that needs to be solved is development of a nondestructive and noninvasive method to analyze dynamic changes of mechanical characteristics of a matrix with minimal side effects on the growing cells. This research was focused on investigating the properties of matrix as a marker of graft condition. In this study, the collagen gel with human primary dermal fibroblasts in suspension (60, 120, 240*103 cells/mL) and collagen gel with cell spheroids were used as model objects. The stiffness and elasticity characteristics were evaluated by a semiconductor laser autodyne. The time and cell concentration dependency of the stiffness and elasticity were investigated. It was shown that these properties changed in a non-linear manner with respect to cell concentration. The maximum matrix stiffness was observed in the collagen gel with the cell concentration of 120*103 cells/mL. This study proved the opportunity to use the mechanical properties of matrix as a marker of graft condition, which can be measured by noninvasive semiconductor laser autodyne technique.

Keywords: graft, matrix, noninvasive method, regenerative medicine, semiconductor laser autodyne

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Authors: R. K. Vinnakota, D. A. Genov, Z. Dong, A. F. Briggs, L. Nordin, S. R. Bank, D. Wasserman

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We present a semiconductor-based plasmonic electro-optic modulator based on excitation and active control of surface plasmon polaritons (SPPs) at the interface of degenerately doped In₀.₅₃Ga₀.₄₇As pn++ junctions. Set of devices, which we refer to as a surface plasmon polariton diode (SPPD), are fabricated and characterized electrically and optically. Optical characterization predicts far-field voltage-aided reflectivity modulation for mid-IR wavelengths. Numerical device characterizations using a self-consistent electro-optic multiphysics model have been performed to confirm the experimental findings were predicting data rates up to 1Gbits/s and 3dB bandwidth as high as 2GHz. Our findings also show that decreasing the device dimensions can potentially lead to data rates of more than 50Gbits/s, thus potentially providing a pathway toward fast all-semiconductor-based plasmotronic devices.

Keywords: plasmonics, optoelectronics, PN junctions, surface plasmon polaritons

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Authors: Samaneh Nabavi, Hadi Shirzad, Somayeh Khanjani, Shirin Jalili

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Quantum dots (QDs) are semiconductor nanocrystals that exhibit intrinsic optical and electrical properties that are size dependent due to the quantum confinement effect. Quantum confinement is brought about by the fact that in bulk semiconductor material the electronic structure consists of continuous bands, and that as the size of the semiconductor material decreases its radius becomes less than the Bohr exciton radius (the distance between the electron and electron-hole) and discrete energy levels result. As a result QDs have a broad absorption range and a narrow emission which correlates to the band gap energy (E), and hence QD size. QDs can thus be tuned to give the desired wavelength of fluorescence emission.Due to their unique properties, QDs have attracted considerable attention in different scientific areas. Also, they have been considered for forensic applications in recent years. The ability of QDs to fluoresce up to 20 times brighter than available fluorescent dyes makes them an attractive nanomaterial for enhancing the visualization of latent fingermarks, or poorly developed fingermarks. Furthermore, the potential applications of QDs in the detection of nitroaromatic explosives, such as TNT, based on directive fluorescence quenching of QDs, electron transfer quenching process or fluorescence resonance energy transfer have been paid to attention. DNA analysis is associated tightly with forensic applications in molecular diagnostics. The amount of DNA acquired at a criminal site is inherently limited. This limited amount of human DNA has to be quantified accurately after the process of DNA extraction. Accordingly, highly sensitive detection of human genomic DNA is an essential issue for forensic study. QDs have also a variety of advantages as an emission probe in forensic DNA quantification.

Keywords: forensic science, quantum dots, DNA typing, explosive sensor, fingermark analysis

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Authors: A. Melouah, M. Diaf

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The III-N nitride semiconductors appear to be excellent host materials, in particular, GaN epilayers doped with Erbium ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable stability may be due to the large energy band gap of the material. Two methods are used for doping the Gallium nitride films with Erbium ions; ion implantation in the wafers obtained by (CVDOM) and in-situ incorporation during epitaxial growth of the layers by (MBE). Photoluminescence (PL) spectroscopy has been the main optical technique used to characterize the emission of Er-doped III-N semiconductor materials. This technique involves optical excitation of Er3+ ions and measurement of the spectrum of the light emission as a function of energy (wavelength). Excitation at above band gap energy leads to the creation of Electron-Hole pairs. Some of this pairs may transfer their energy to the Er3+ ions, exciting the 4f-electrons and resulting in optical emission. This corresponds to an indirect excitation of the Er3+ ions by electron-hole pairs. The direct excitation by the optical pumping of the radiation can be obtained.

Keywords: photoluminescence, Erbium, GaN, semiconductor materials

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Authors: Nuray Güy, Mahmut Özacar

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Semiconductor nanoparticles such as TiO₂ and ZnO as photocatalysts are very efficient catalysts for wastewater treatment by the chemical utilization of light energy, which is capable of converting the toxic and nonbiodegradable organic compounds into carbon dioxide and mineral acids. ZnO semiconductor has a wide bandgap energy of 3.37 eV and a relatively large exciton binding Energy (60 meV), thus can absorb only UV light with the wavelength equal to or less than 385 nm. It exhibits low efficiency under visible light illumination due to its wide band gap energy. In order to improve photocatalytic activity of ZnO under visible light, band gap of ZnO may be narrowed by doping such as N, C, S nonmetal ions and coupled two separate semiconductors possessing different energy levels for their corresponding conduction and valence bands. ZnS has a wider band gap (Eg=3.7 eV) than ZnO and generates electron–hole pairs by photoexcitation rapidly. In the present work, N doped ZnO/ZnS nano photocatalysts with visible-light response were synthesized by microwave-hydrothermal method using thiourea as N source. The prepared photocatalysts were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV–visible (UV–vis). The photocatalytic activities samples and undoped ZnO have been studied for the degradation of dye, and have also been compared with together.

Keywords: photocatalyst, synthesis, visible light, ZnO/ZnS

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Authors: Akanksha Singh, Mahesh Kumar, Shailesh N. Sharma

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Semiconductor quantum dots (QDs) such as CdSe, CdS, InP, etc. have gained significant interest in the recent years due to its application in various fields such as LEDs, solar cells, lasers, biological markers, etc. The interesting feature of the QDs is their tunable band gap. The size of the QDs can be easily varied by varying the synthesis parameters which change the band gap. One of the limitations with II-VI semiconductor QDs is their biological application. The use of cadmium makes them unsuitable for biological applications. III-V QD such as InP overcomes this problem as they are structurally robust because of the covalent bonds which do not allow the ions to leak. Also, InP QDs has large Bohr radii which increase the window for the quantum confinement effect. The synthesis of InP QDs is difficult and time consuming. Authors have synthesized InP using a novel, quick synthesis method which utilizes trioctylphosphine as a source of phosphorus. In this work, authors have made InP composites with P3HT(Poly(3-hexylthiophene-2,5-diyl))polymer(organic-inorganic hybrid material) and gold nanoparticles(metal-semiconductor composites). InP-P3HT shows FRET phenomenon whereas InP-Au shows charge transfer mechanism. The synthesized InP QDs has an absorption band at 397 nm and PL peak position at 491 nm. The band gap of the InP QDs is 2.46 eV as compared to the bulk band gap of InP i.e. 1.35 eV. The average size of the QDs is around 3-4 nm. In order to protect the InP core, a shell of wide band gap material i.e. ZnS is coated on the top of InP core. InP-P3HT composites were made in order to study the charge transfer/energy transfer phenomenon between them. On adding aliquots of P3HT to InP QDs solution, the P3HT PL increases which can be attributed to the dominance of Förster energy transfer between InP QDs (donor) P3HT polymer (acceptor). There is a significant spectral overlap between the PL spectra of InP QDs and absorbance spectra of P3HT. But in the case of InP-Au nanocomposites, significant charge transfer was seen from InP QDs to Au NPs. When aliquots of Au NPs were added to InP QDs, a decrease in the PL of the InP QDs was observed. This is due to the charge transfer from the InP QDs to the Au NPs. In the case of metal semiconductor composites, the enhancement and quenching of QDs depend on the size of the QD and the distance between the QD and the metal NP. These two composites have different phenomenon between donor and acceptor and hence can be utilized for two different applications. The InP-P3HT composite can be utilized for LED devices due to enhancement in the PL emission (FRET). The InP-Au can be utilized efficiently for photovoltaic application owing to the successful charge transfer between InP-Au NPs.

Keywords: charge transfer, FRET, gold nanoparticles, InP quantum dots

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

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Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: fast vs slow BTI, fast wafer level reliability (FWLR), negative bias temperature instability (NBTI), NBTI measurement system, metal-oxide-semiconductor field-effect transistor (MOSFET), NBTI recovery, reliability

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Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

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Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: quantum semiconductors, nanostructures, quantum dots, spin polarization

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Authors: Yasuyuki Takahashi, Hayato Ishimura, Masao Miyagawa, Teruhito Mochizuki

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Quantitative measurement of myocardium perfusion is possible with single photon emission computed tomography (SPECT) using a semiconductor detector. However, accumulation of ^99mTc-tetrofosmin in the liver may make it difficult to assess that accurately in the inferior myocardium. Our idea is to reduce the high accumulation in the liver by using dynamic SPECT imaging and a technique called time subtraction. We evaluated the performance of a new SPECT system with a cadmium-zinc-telluride solid-state semi- conductor detector (Discovery NM 530c; GE Healthcare). Our system acquired list-mode raw data over 10 minutes for a typical patient. From the data, ten SPECT images were reconstructed, one for every minute of acquired data. Reconstruction with the semiconductor detector was based on an implementation of a 3-D iterative Bayesian reconstruction algorithm. We studied 20 patients with coronary artery disease (mean age 75.4 ± 12.1 years; range 42-86; 16 males and 4 females). In each subject, 259 MBq of ^99mTc-tetrofosmin was injected intravenously. We performed both a phantom and a clinical study using dynamic SPECT. An approximation to a liver-only image is obtained by reconstructing an image from the early projections during which time the liver accumulation dominates (0.5~2.5 minutes SPECT image-5~10 minutes SPECT image). The extracted liver-only image is then subtracted from a later SPECT image that shows both the liver and the myocardial uptake (5~10 minutes SPECT image-liver-only image). The time subtraction of liver was possible in both a phantom and the clinical study. The visualization of the inferior myocardium was improved. In past reports, higher accumulation in the myocardium due to the overlap of the liver is un-diagnosable. Using our time subtraction method, the image quality of the ^99mTc-tetorofosmin myocardial SPECT image is considerably improved.

Keywords: 99mTc-tetrofosmin, dynamic SPECT, time subtraction, semiconductor detector

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Authors: Tahani Amutairi, Paul May, Neil Allan

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Many properties of semiconductor materials (mechanical, electronic, magnetic, and optical) can be significantly modified by introducing a point defect. Diamond offers extraordinary properties as a semiconductor, and doping seems to be a viable method of solving the problem associated with the fabrication of diamond-based electronic devices in order to exploit those properties. The dopants are believed to play a significant role in reducing the energy barrier to conduction and controlling the mobility of the carriers and the resistivity of the film. Although it has been proven that the n-type diamond semiconductor can be obtained with phosphorus doping, the resulting ionisation energy and mobility are still inadequate for practical application. Theoretical studies have revealed that this is partly because the effects of the many phosphorus atoms incorporated in the diamond lattice are compensated by acceptor states. Using spin-polarised hybrid density functional theory and a supercell approach, we explored the effects of bonding one N atom to a P in adjacent substitutional sites in diamond. A range of hybrid functional, including HSE06, B3LYP, PBE0, PBEsol0, and PBE0-13, were used to calculate the formation, binding, and ionisation energies, in order to explore the solubility and stability of the point defect. The equilibrium geometry and the magnetic and electronic structures were analysed and presented in detail. The defect introduces a unique reconstruction in a diamond where one of the C atoms coordinated with the N atom involved in the elongated C-N bond and creates a new bond with the P atom. The simulated infrared spectra of phosphorus-nitrogen defects were investigated with different supercell sizes and found to contain two sharp peaks at the edges of the spectrum, one at a high frequency 1,379 cm⁻¹ and the second appearing at the end range, 234 cm⁻¹, as obtained with the largest supercell (216).

Keywords: DFT, HSE06, B3LYP, PBE0, PBEsol0, PBE0-13

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Authors: I. Filikhin, B. Vlahovic

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We focus on a novel type of detection based on electron tunneling properties of double nanoscale structures in semiconductor materials. Semiconductor heterostructures as quantum wells (QWs), quantum dots (QDs), and quantum rings (QRs) may have energy level structure of several hundred of electron confinement states. The single electron spectra of the double quantum objects (DQW, DQD, and DQR) were studied in our previous works with relation to the electron localization and tunneling between the objects. The wave function of electron may be localized in one of the QDs or be delocalized when it is spread over the whole system. The localizing-delocalizing tunneling occurs when an electron transition between both states is possible. The tunneling properties of spectra differ strongly for “regular” and “chaotic” systems. We have shown that a small violation of the geometry drastically affects localization of electron. In particular, such violations lead to the elimination of the delocalized states of the system. The same symmetry violation effect happens if electrical or magnetic fields are applied. These phenomena could be used to propose a new type of detection based on the high sensitivity of charge transport between double nanostructures and small violations of the shapes. It may have significant technological implications.

Keywords: double quantum dots, single electron levels, tunneling, electron localizations

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Authors: Vedant Subhash

Abstract:

This paper discusses the physics of the detection of thermal neutrons using thin-film coated semiconductor detectors. The thermal neutron detection efficiency as a function of film thickness is calculated for the front and back irradiation detector devices coated with ¹⁰B, ⁶LiF, and pure Li thin films. The detection efficiency for back irradiation devices is 4.15% that is slightly higher than that for front irradiation detectors, 4.0% for ¹⁰B films of thickness 2.4μm. The theoretically calculated thermal neutron detection efficiency using ¹⁰B film thickness of 1.1 μm for the back irradiation device is 3.0367%, which has an offset of 0.0367% from the experimental value of 3.0%. The detection efficiency values are compared and proved consistent with the given calculations.

Keywords: detection efficiency, neutron detection, semiconductor detectors, thermal neutrons

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Authors: S. Masoud Barakati, Mohsen Rahmani Haredasht

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Recently, the use of T-type nested neutral point clamped (T-NNPC) converter has increased in medium voltage applications. However, the T-NNPC converter architecture's reliability and continuous operation are at risk by including semiconductor switches. Semiconductor switches are a prone option for open-circuit faults. As a result, fault-tolerant converters are required to improve the system's reliability and continuous functioning. This study's primary goal is to provide a fault-tolerant T-NNPC converter configuration. In the proposed design utilizing the cold reservation approach, a redundant phase is considered, which replaces the faulty phase once the fault is diagnosed in each phase. The suggested fault-tolerant configuration can be easily implemented in practical applications due to the use of a simple PWM control mechanism. The performance evaluation of the proposed configuration under different scenarios in the MATLAB-Simulink environment proves its efficiency.

Keywords: T-type nested neutral point clamped converter, reliability, continuous operation, open-circuit faults, fault-tolerant converters

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Authors: Kok Hong Tan, Hing Wah Lee, Jhih-Wei Chen, Chang Fu Dee, Chung-Lin Wu, Siang-Piao Chai, Wei Sea Chang

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Semiconductor photocatalyst is known as one of the key roles in developing clean and sustainable energy. However, most of the semiconductor only possesses photoactivity within the UV light region, and hence, decreases the overall photocatalyst efficiency. Generally, the overall effectiveness of the photocatalyst activity is determined by three critical steps: (i) light absorption efficiency and photoexcitation electron-hole pair generation, (ii) separation and migration of charge carriers to the surface of the photocatalyst, and (iii) surface reaction of the carriers with its environment. Much effort has been invested on optimizing hierarchical nanostructures of semiconductors for efficient photoactivity due to the fact that the visible light absorption capability and occurrence of the chemical reactions mostly depend on the dimension of photocatalysts. In this work, we incorporated zero-dimensional (0D) gold nanoparticles (AuNPs) and one dimensional (1D) Zinc Oxide (ZnO) nanorods (NRs) onto strontium titanate (STO) for efficient visible light absorption, charge transfer, and separation. We demonstrate that the electrical and optical properties of the photocatalyst can be tuned by controlling the dimensional structures of AuNPs and ZnO NRs. We found that smaller AuNPs sizes exhibited higher photoactivity because of Fermi level shifting toward the conductive band of STO, STO band gap narrowing and broadening of absorption spectrum to the visible light region. For ZnO NRs, it was found that the average ZnO NRs c-axis length must achieve of certain length to induce multiphoton absorption as a result of light reflection and trapping behavior in the free space between adjacent ZnO NRs hence broadening the absorption spectrum of ZnO from UV to visible light region. This work opens up a new way of broadening the absorption spectrum by incorporating controllable nanostructures of semiconductors, which is important in optimizing the solar water splitting process.

Keywords: gold nanoparticles, photoelectrochemical, PEC, semiconductor photocatalyst, zinc oxide nanorods

Procedia PDF Downloads 135