Search results for: thin walled section
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2601

Search results for: thin walled section

2361 Determination of Nanomolar Mercury (II) by Using Multi-Walled Carbon Nanotubes Modified Carbon Zinc/Aluminum Layered Double Hydroxide – 3 (4-Methoxyphenyl) Propionate Nanocomposite Paste Electrode

Authors: Illyas Md Isa, Sharifah Norain Mohd Sharif, Norhayati Hashima

Abstract:

A mercury(II) sensor was developed by using multi-walled carbon nanotubes (MWCNTs) paste electrode modified with Zn/Al layered double hydroxide-3(4-methoxyphenyl)propionate nanocomposite (Zn/Al-HMPP). The optimum conditions by cyclic voltammetry were observed at electrode composition 2.5% (w/w) of Zn/Al-HMPP/MWCNTs, 0.4 M potassium chloride, pH 4.0, and scan rate of 100 mVs-1. The sensor exhibited wide linear range from 1x10-3 M to 1x10-7 M Hg2+ and 1x10-7 M to 1x10-9 M Hg2+, with a detection limit of 1x10-10 M Hg2+. The high sensitivity of the proposed electrode towards Hg(II) was confirmed by double potential-step chronocoulometry which indicated these values; diffusion coefficient 1.5445 x 10-9 cm2 s-1, surface charge 524.5 µC s-½ and surface coverage 4.41 x 10-2 mol cm-2. The presence of 25-fold concentration of most metal ions had no influence on the anodic peak current. With characteristics such as high sensitivity, selectivity and repeatability the electrode was then proposed as the appropriate alternative for the determination of mercury(II).

Keywords: cyclic voltammetry, mercury(II), modified carbon paste electrode, nanocomposite

Procedia PDF Downloads 307
2360 Determination of Nanomolar Mercury (II) by Using Multi-Walled Carbon Nanotubes Modified Carbon Zinc/Aluminum Layered Double Hydroxide-3(4-Methoxyphenyl) Propionate Nanocomposite Paste Electrode

Authors: Illyas Md Isa, Sharifah Norain Mohd Sharif, Norhayati Hashim

Abstract:

A mercury(II) sensor was developed by using multi-walled carbon nano tubes (MWCNTs) paste electrode modified with Zn/Al layered double hydroxide-3(4-methoxyphenyl) propionate nano composite (Zn/Al-HMPP). The optimum conditions by cyclic voltammetry were observed at electrode composition 2.5% (w/w) of Zn/Al-HMPP/MWCNTs, 0.4 M potassium chloride, pH 4.0, and scan rate of 100 mVs-1. The sensor exhibited wide linear range from 1x10-3 M to 1x10-7 M Hg2+ and 1x10-7 M to 1x10-9 M Hg2+, with a detection limit of 1 x 10-10 M Hg2+. The high sensitivity of the proposed electrode towards Hg(II) was confirmed by double potential-step chronocoulometry which indicated these values; diffusion coefficient 1.5445 x 10-9 cm2 s-1, surface charge 524.5 µC s-½ and surface coverage 4.41 x 10-2 mol cm-2. The presence of 25-fold concentration of most metal ions had no influence on the anodic peak current. With characteristics such as high sensitivity, selectivity and repeatability the electrode was then proposed as the appropriate alternative for the determination of mercury.

Keywords: Cyclic voltammetry, Mercury(II), Modified carbon paste electrode, Nanocomposite

Procedia PDF Downloads 432
2359 Theoretical and Experimental Study of Iron Oxide Thin Film

Authors: Fahima Djefaflia, M. Loutfi Benkhedir

Abstract:

The aim of this work was to development and characterisation of iron oxide thin films by spray pyrolysis technique. Influences of deposition parameters pile temperature on structural and optical properties have been studied Thin films are analysed by various techniques of materials. The structural characterization of films by analysis of spectra of X-ray diffraction showed that the films prepared at T=350,400,450 are crystalline and amorphous at T=300C. For particular condition, two phases hematiteFe2O3 and magnetite Fe3O4 have been observed.The UV-Visible spectrophotometer of this films confirms that it is possible to obtain films with a transmittance of about 15-30% in the visible range. In addition, this analysis allowed us to determine the optical gap and disorder of films. We conclude that the increase in temperature is accompanied by a reduction in the optical gap with increasing in disorder. An ab initio calculation for this phase shows that the results are in good agreement with the experimental results.

Keywords: spray pyrolysis technique, iron oxide, ab initio calculation, optical properties

Procedia PDF Downloads 557
2358 Low-Temperature Poly-Si Nanowire Junctionless Thin Film Transistors with Nickel Silicide

Authors: Yu-Hsien Lin, Yu-Ru Lin, Yung-Chun Wu

Abstract:

This work demonstrates the ultra-thin poly-Si (polycrystalline Silicon) nanowire junctionless thin film transistors (NWs JL-TFT) with nickel silicide contact. For nickel silicide film, this work designs to use two-step annealing to form ultra-thin, uniform and low sheet resistance (Rs) Ni silicide film. The NWs JL-TFT with nickel silicide contact exhibits the good electrical properties, including high driving current (>10⁷ Å), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this work also compares the electrical characteristics of NWs JL-TFT with nickel silicide and non-silicide contact. Nickel silicide techniques are widely used for high-performance devices as the device scaling due to the source/drain sheet resistance issue. Therefore, the self-aligned silicide (salicide) technique is presented to reduce the series resistance of the device. Nickel silicide has several advantages including low-temperature process, low silicon consumption, no bridging failure property, smaller mechanical stress, and smaller contact resistance. The junctionless thin-film transistor (JL-TFT) is fabricated simply by heavily doping the channel and source/drain (S/D) regions simultaneously. Owing to the special doping profile, JL-TFT has some advantages such as lower thermal the budget which can integrate with high-k/metal-gate easier than conventional MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors), longer effective channel length than conventional MOSFETs, and avoidance of complicated source/drain engineering. To solve JL-TFT has turn-off problem, JL-TFT needs ultra-thin body (UTB) structure to reach fully depleted channel region in off-state. On the other hand, the drive current (Iᴅ) is declined as transistor features are scaled. Therefore, this work demonstrates ultra thin poly-Si nanowire junctionless thin film transistors with nickel silicide contact. This work investigates the low-temperature formation of nickel silicide layer by physical-chemical deposition (PVD) of a 15nm Ni layer on the poly-Si substrate. Notably, this work designs to use two-step annealing to form ultrathin, uniform and low sheet resistance (Rs) Ni silicide film. The first step was promoted Ni diffusion through a thin interfacial amorphous layer. Then, the unreacted metal was lifted off after the first step. The second step was annealing for lower sheet resistance and firmly merged the phase.The ultra-thin poly-Si nanowire junctionless thin film transistors NWs JL-TFT with nickel silicide contact is demonstrated, which reveals high driving current (>10⁷ Å), subthreshold slope (186 mV/dec.), and low parasitic resistance. In silicide film analysis, the second step of annealing was applied to form lower sheet resistance and firmly merge the phase silicide film. In short, the NWs JL-TFT with nickel silicide contact has exhibited a competitive short-channel behavior and improved drive current.

Keywords: poly-Si, nanowire, junctionless, thin-film transistors, nickel silicide

Procedia PDF Downloads 236
2357 Study of Nanocrystalline Al Doped Zns Thin Films by Chemical Bath Deposition Method

Authors: Hamid Merzouk, Djahida Touati-Talantikite, Amina Zaabar

Abstract:

New nanosized materials are in huge expansion worldwide. They play a fundamental role in various industrial applications thanks their unique and functional properties. Moreover, in recent years, a great effort has been made to the design and control fabrication of nanostructured semiconductors such zinc sulphide. In recent years, much attention has been accorded in doped and co-doped ZnS to improve the ZnS films quality. We present in this work the preparation and characterization of ZnS and Al doped ZnS thin films. Nanoparticles ZnS and Al doped ZnS films are prepared by chemical bath deposition method (CBD), for various dopant concentrations. Thin films are deposed onto commercial microscope glass slides substrates. Thiourea is used as sulfide ion source, zinc acetate as zinc ion source and manganese acetate as manganese ion source in alkaline bath at 90 °C. X-ray diffraction (XRD) analyses are carried out at room temperature on films and powders with a powder diffractometer, using CuKα radiation. The average grain size obtained from the Debye–Scherrer’s formula is around 10 nm. Films morphology is examined by scanning electron microscopy. IR spectra of representative sample are recorded with the FTIR between 400 and 4000 cm-1.The transmittance (70 %) is performed with the UV–VIS spectrometer in the wavelength range 200–800 nm. This value is enhanced by Al doping.

Keywords: ZnS, nanostructured semiconductors, thin films, chemical bath deposition

Procedia PDF Downloads 524
2356 Optical Characterization and Surface Morphology of SnO2 Thin Films Prepared by Spin Coating Technique

Authors: J. O. Ajayi, S. S. Oluyamo, D. B. Agunbiade

Abstract:

In this work, tin oxide thin films (SnO2) were prepared using the spin coating technique. The effects of precursor concentration on the thin film properties were investigated. Tin oxide was synthesized from anhydrous Tin (II) Chloride (SnCl2) dispersed in Methanol and Acetic acid. The metallic oxide (SnO2) films deposited were characterized using the UV Spectrophotometer and the Scanning Electron Microscope (SEM). From the absorption spectra, absorption increases with decrease in precursor concentration. Absorbance in the VIS region is lower than 0 % at higher concentration. The optical transmission spectrum shows that transmission increases as the concentration of precursor decreases and the maximum transmission in visible region is about 90% for films prepared with 0.2 M. Also, there is increase in the reflectance of thin films as concentration of precursor increases. The films have high transparency (more than 85%) and low reflectance (less than 40%) in the VIS region. Investigation showed that the direct band gap value increased from 3.79eV, to 3.82eV as the precursor concentration decreased from 0.6 M to 0.2 M. Average direct bandgap energy for all the tin oxide films was estimated to be 3.80eV. The effect of precursor concentration was directly observed in crystal outgrowth and surface particle densification. They were found to increase proportionately with higher concentration.

Keywords: anhydrous TIN (II) chloride, densification, NIS- VIS region, spin coating technique

Procedia PDF Downloads 261
2355 Optical and Magnetic Properties of Ferromagnetic Co-Ni Co-Doped TiO2 Thin Films

Authors: Rabah Bensaha, Badreddine Toubal

Abstract:

We investigate the structural, optical and magnetic properties of TiO2, Co-doped TiO2, Ni-doped TiO2 and Co-Ni co-doped TiO2 thin films prepared by the sol-gel dip coating method. Fully anatase phase was obtained by adding metal ions without any detectable impurity phase or oxide formed. AFM and SEM micrographs clearly confirm that the addition of Co-Ni affects the shape of anatase nanoparticles. The crystallite sizes and surface roughness of TiO2 films increase with Co-doping, Ni-doping and Co–Ni co-doping, respectively. The refractive index, thickness and optical band gap values of the films were obtained by means of optical transmittance spectra measurements. The band gap of TiO2 sample was decreased by Co-doping, Ni-doping and Co–Ni co-doping TiO2 films. Both undoped and Co-Ni co-doped films were found to be ferromagnetic at room temperature may due to the presence of oxygen vacancy defect and the probable formation of metal clusters Co-Ni.

Keywords: Co-Ni co-doped, anatase TiO2, ferromagnetic, sol-gel method, thin films

Procedia PDF Downloads 443
2354 Optimization of Cu (In, Ga)Se₂ Based Thin Film Solar Cells: Simulation

Authors: Razieh Teimouri

Abstract:

Electrical modelling of Cu (In,Ga)Se₂ thin film solar cells is carried out with compositionally graded absorber and CdS buffer layer. Simulation results are compared with experimental data. Surface defect layers (SDL) are located in CdS/CIGS interface for improving open circuit voltage simulated structure through the analysis of the interface is investigated with or without this layer. When SDL removed, by optimizing the conduction band offset (CBO) position of the buffer/absorber layers with its recombination mechanisms and also shallow donor density in the CdS, the open circuit voltage increased significantly. As a result of simulation, excellent performance can be obtained when the conduction band of window layer positions higher by 0.2 eV than that of CIGS and shallow donor density in the CdS was found about 1×10¹⁸ (cm⁻³).

Keywords: CIGS solar cells, thin film, SCAPS, buffer layer, conduction band offset

Procedia PDF Downloads 229
2353 Mineralogy and Thermobarometry of Xenoliths in Basalt from the Chanthaburi-Trat Gem Fields, Thailand

Authors: Apichet Boonsoong

Abstract:

In the Chanthaburi-Trat basalts, xenoliths are composed of essentially ultramafic xenoliths (particularly spinel lherzolite) with a few of an aggregate of feldspar. Some 19 ultramafic xenoliths were collected from 13 different locations. They range in size from 3.5 to 60mm across. Most are weathered and oxidized on the surface but fresh samples are obtained from cut surfaces. Chemical analyses were performed on carbon-coated polished thin sections using a fully automated CAMECA SX-50 electron microprobe (EMPA) in wavelength-dispersive mode. In thin section, they are seen to consist of variable amounts of olivine, clinopyroxene, orthopyroxene with minor spinel and plagioclase, and are classed as lherzolite. Modal compositions of the ultramafic nodules vary with olivine (60-75%), clinopyroxene (20-30%), orthopyroxene (0-15%), minor spinel (1-3%) and plagioclase (<1%). The essential minerals form an equigranular, medium- to coarse-grained, granoblastic texture, and all are in mutual contact indicating attainment of equilibrium. Reaction rims are common along the nodule margins and in some are also present along grain boundaries. Zoning occurs in clinopyroxene, and to a lesser extent in orthopyroxene. The homogeneity of mineral compositions in lherzolite xenoliths suggests the attainment of equilibrium. The equilibration temperatures of these xenoliths are estimated to be in the range of 973 to 1063°C. Pressure estimates are not so easily obtained because no suitable barometer exists for garnet-free lherzolites and so an indirect method was used. The general mineral assemblage of the lherzolite xenoliths and the absence of garnet indicate a pressure range of approximately 12–19kbar, which is equivalent to depths approximately of 38 to 60km.

Keywords: chanthaburi-trat basalts, spinel lherzolite, xenoliths, 973 to 1063°C, 38 to 60km

Procedia PDF Downloads 118
2352 Investigation Of The Catalyst's Effect On Nickel Sulfide Thin Films

Authors: Randa Slatnia

Abstract:

In this study, the nanostructured stable phase identification elaborated by nickel nitrate hyxahydrate and thiourea compounds. After the preparation of the solution (Stirred mixture with methanol as solvent), a deposition of eight layers of this solution on a glass substrate and annealed at 300 °C for energy applications. The annealed sample was analyzed by X-ray Grazing incidence diffraction (GID) with a Bruker D8 Advance diffractometer using Cu Kα1 radiation at 40 kV and 40 mA (1600 W) and Scanning electron microscopy (Thermo Fisher environmental SEM). The results of XRD-GID analysis for the prepared sample showed the formation of an identified stable phase NiS2 and the XRD-GID pattern of the elaborated sample with eight layers prepared solution and annealed show wide and characteristic peaks of the NiS2 with cubic structure (ICDD card no. PDF 01-078-4702). The morphology of the NiS2 thin films confirmed by XRD-GID analysis was investigated by ESEM showed a surface with a uniform and homogeneous distribution nanostructure.

Keywords: nickel sulfide, thin films, XRD, ESEM

Procedia PDF Downloads 82
2351 Self-Assembly of Monodisperse Oleic Acid-Capped Superparamagnetic Iron Oxide Nanoparticles

Authors: Huseyin Kavas

Abstract:

Oleic acid (OA) capped superparamagnetic iron oxide nanoparticles (SPION) were synthesized by a thermal decomposition method. The composition of nanoparticles was confirmed by X-ray powder diffraction, and the morphology of particles was investigated by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Transmission electron microscopy (TEM). The crystalline and particle size distribution of SPIONS capped with OA were investigated with a mean size of 6.99 nm and 8.9 nm, respectively. It was found that SPIONS have superparamagnetic characteristics with a saturation magnetization value of 64 emu/g. The thin film form of self-assembled SPIONS was fabricated by coating techniques of spin coating and dip coating. SQUID-VSM magnetometer and FMR techniques were performed in order to evaluate the magnetic properties of thin films, especially the existence of magnetic anisotropy. The thin films with magnetic anisotropy were obtained by self-assembled monolayers of SPION.

Keywords: magnetic materials, nanostructures, self-assembly, FMR

Procedia PDF Downloads 105
2350 Impact of Fin Cross Section Shape on Potential Distribution of Nanoscale Trapezoidal FinFETs

Authors: Ahmed Nassim Moulai Khatir

Abstract:

Fin field effect transistors (FinFETs) deliver superior levels of scalability than the classical structure of MOSFETs by offering the elimination of short channel effects. Modern FinFETs are 3D structures that rise above the planar substrate, but some of these structures have inclined surfaces, which results in trapezoidal cross sections instead of rectangular sections usually used. Fin cross section shape of FinFETs results in some device issues, like potential distribution performance. This work analyzes that impact with three-dimensional numeric simulation of several triple-gate FinFETs with various top and bottom widths of fin. Results of the simulation show that the potential distribution and the electrical field in the fin depend on the sidewall inclination angle.

Keywords: FinFET, cross section shape, SILVACO, trapezoidal FinFETs

Procedia PDF Downloads 46
2349 Unsteady Similarity Solution for a Slender Dry Patch in a Thin Newtonian Fluid Film

Authors: S. S. Abas, Y. M. Yatim

Abstract:

In this paper the unsteady, slender, symmetric dry patch in an infinitely wide and thin liquid film of Newtonian fluid draining under gravity down an inclined plane in the presence of strong surface-tension effect is considered. A similarity transformation, named a travelling-wave similarity solution is used to reduce the governing partial differential equation into the ordinary differential equation which is then solved numerically using a shooting method. The introduction of surface-tension effect on the flow leads to a fourth-order ordinary differential equation. The solution obtained predicts that the dry patch has a quartic shape and the free surface has a capillary ridge near the contact line which decays in an oscillatory manner far from it.

Keywords: dry patch, Newtonian fluid, similarity solution, surface-tension effect, travelling-wave, unsteady thin-film flow

Procedia PDF Downloads 303
2348 The Ultimate Scaling Limit of Monolayer Material Field-Effect-Transistors

Authors: Y. Lu, L. Liu, J. Guo

Abstract:

Monolayer graphene and dichaclogenide semiconductor materials attract extensive research interest for potential nanoelectronics applications. The ultimate scaling limit of double gate MoS2 Field-Effect-Transistors (FETs) with a monolayer thin body is examined and compared with ultra-thin-body Si FETs by using self-consistent quantum transport simulation in the presence of phonon scattering. Modelling of phonon scattering, quantum mechanical effects, and self-consistent electrostatics allows us to accurately assess the performance potential of monolayer MoS2 FETs. The results revealed that monolayer MoS2 FETs show 52% smaller Drain Induced Barrier Lowering (DIBL) and 13% Smaller Sub-Threshold Swing (SS) than 3 nm-thick-body Si FETs at a channel length of 10 nm with the same gating. With a requirement of SS<100mV/dec, the scaling limit of monolayer MoS2 FETs is assessed to be 5 nm, comparing with 8nm of the ultra-thin-body Si counterparts due to the monolayer thin body and higher effective mass which reduces direct source-to-drain tunnelling. By comparing with the ITRS target for high performance logic devices of 2023; double gate monolayer MoS2 FETs can fulfil the ITRS requirements.

Keywords: nanotransistors, monolayer 2D materials, quantum transport, scaling limit

Procedia PDF Downloads 233
2347 Heat Transfer of an Impinging Jet on a Plane Surface

Authors: Jian-Jun Shu

Abstract:

A cold, thin film of liquid impinging on an isothermal hot, horizontal surface has been investigated. An approximate solution for the velocity and temperature distributions in the flow along the horizontal surface is developed, which exploits the hydrodynamic similarity solution for thin film flow. The approximate solution may provide a valuable basis for assessing flow and heat transfer in more complex settings.

Keywords: flux, free impinging jet, solid-surface, uniform wall temperature

Procedia PDF Downloads 478
2346 Microstructure Analysis and Multiple Photoluminescence in High Temperature Electronic Conducting InZrZnO Thin Films

Authors: P. Jayaram, Prasoon Prasannan, N. K. Deepak, P. P. Pradyumnan

Abstract:

Indium and Zirconium co doped zinc oxide (InZrZnO) thin films are prepared by chemical spray pyrolysis method on pre-heated quartz substrates. The films are subjected to vacuum annealing at 400ᵒC for three hours in an appropriate air (10-5mbar) ambience after deposition. X-ray diffraction, Scanning electron microscopy, energy dispersive spectra and photoluminescence are used to characterize the films. Temperature dependent electrical measurements are conducted on the films and the films exhibit exceptional conductivity at higher temperatures. XRD analysis shows that all the films prepared in this work have hexagonal wurtzite structure. The average crystallite sizes of the films were calculated using Scherrer’s formula, and uniform deformation model (UDM) of Williamson-Hall method is used to establish the micro-strain values. The dislocation density is determined from the Williamson and Smallman’s formula. Intense, broad and strongly coupled multiple photoluminescence were observed from photoluminescence spectra. PL indicated relatively high concentration defective oxygen and Zn vacancies in the film composition. Strongly coupled ultraviolet near blue emissions authenticate that the dopants are capable of inducing modulated free excitonic (FX), donor accepter pair (DAP) and longitudinal optical phonon emissions in thin films.

Keywords: PL, SEM, TCOs, thin films, XRD

Procedia PDF Downloads 237
2345 On-The-Fly Cross Sections Generation in Neutron Transport with Wide Energy Region

Authors: Rui Chen, Shu-min Zhou, Xiong-jie Zhang, Ren-bo Wang, Fan Huang, Bin Tang

Abstract:

During the temperature changes in reactor core, the nuclide cross section in reactor can vary with temperature, which eventually causes the changes of reactivity. To simulate the interaction between incident neutron and various materials at different temperatures on the nose, it is necessary to generate all the relevant reaction temperature-dependent cross section. Traditionally, the real time cross section generation method is used to avoid storing huge data but contains severe problems of low efficiency and adaptability for narrow energy region. Focused on the research on multi-temperature cross sections generation in real time during in neutron transport, this paper investigated the on-the-fly cross section generation method for resolved resonance region, thermal region and unresolved resonance region, and proposed the real time multi-temperature cross sections generation method based on double-exponential formula for resolved resonance region, as well as the Neville interpolation for thermal and unresolved resonance region. To prove the correctness and validity of multi-temperature cross sections generation based on wide energy region of incident neutron, the proposed method was applied in critical safety benchmark tests, which showed the capability for application in reactor multi-physical coupling simulation.

Keywords: cross section, neutron transport, numerical simulation, on-the-fly

Procedia PDF Downloads 196
2344 Effect of Multi Walled Carbon Nanotubes on Pyrolysis Behavior of Unsaturated Polyester Resin

Authors: Rosli Mohd Yunus, A. K. M. Moshiul Alam, Mohammad Dalour Beg

Abstract:

In the case of advance polymeric materials reinforcement and thermal stability of matrix is a focused arena of researchers. The distribution of carbon nanotubes (CNTs) in polymer matrix influences material properties. In this study, multi-walled carbon nanotubes (MWCNTs) have been dispersed in unsaturated polyester resin (UPR) through solution mixing and sonication techniques using tetra hydro furan (THF) solvent. Nanocomposites have been fabricated with solution mixing and without solution mixing. Viscosity, Fourier-transform infrared spectroscopy, Field emission scanning electron microscopy (FESEM) investigations have been conducted to study the distribution as well as interaction between matrix and MWCNT. The differential scanning calorimetry (DSC), thermogravimetric analyses (TGA) and pyrolysis behavior have been conducted to study the thermal degradation and stability of nanocomposites. In addition, the SEM micrographs of nanocomposite residual chars were exhibited more packed together. Incorporation of CNT enhances crystallinity and mechanical and thermal properties of the nanocomposites. Correlations among MWCNTs dispersion, nucleation, fracture morphology and various properties have been made.

Keywords: char, multiwall carbon nanotubes, nano composite, pyrolysis

Procedia PDF Downloads 360
2343 DOA Estimation Using Golden Section Search

Authors: Niharika Verma, Sandeep Santosh

Abstract:

DOA technique is a localization technique used in the communication field. Various algorithms have been developed for direction of arrival estimation like MUSIC, ROOT MUSIC, etc. These algorithms depend on various parameters like antenna array elements, number of snapshots and various others. Basically the MUSIC spectrum is evaluated and peaks obtained are considered as the angle of arrivals. The angles evaluated using this process depends on the scanning interval chosen. The accuracy of the results obtained depends on the coarseness of the interval chosen. In this paper, golden section search is applied to the MUSIC algorithm and therefore, more accurate results are achieved. Initially the coarse DOA estimations is done using the MUSIC algorithm in the range -90 to 90 degree at the interval of 10 degree. After the peaks obtained then fine DOA estimation is done using golden section search. Also, the partitioning method is applied to estimate the number of signals incident on the antenna array. Dependency of the algorithm on the number of snapshots is also being explained. Hence, the accurate results are being determined using this algorithm.

Keywords: Direction of Arrival (DOA), golden section search, MUSIC, number of snapshots

Procedia PDF Downloads 446
2342 Development of (Cu2o-Zno) Binary Oxide Anode for Electrochemical Degradation of Dye

Authors: M. El Hajji, A. Hallaoui, L. Bazzi, A. Benlhachemi, O. Jbara, A. Tara, B. Bakiz, L. Bazzi, M. Hilali

Abstract:

The objective of this study was the development of zinc-copper binary oxide "Cu2O-ZnO" thin films by the electrochemical method "cathodic electrodeposition" and their uses for the degradation of a basic dye "Congo Red" by direct anodic oxidation. The anode materials synthesized were characterized by X-ray diffraction "XRD" and by scanning electron microscopy "SEM" coupled to EDS.

Keywords: Cu2O-ZnO thin films, cathodic electrodeposition, electrodegradation, Congo Red, BDD

Procedia PDF Downloads 343
2341 The Impact of Quality Cost on Revenue Sharing in Supply Chain Management

Authors: Fayza M. Obied-Allah

Abstract:

Customer’ needs, quality, and value creation while reducing costs through supply chain management provides challenges and opportunities for companies and researchers. In the light of these challenges, modern ideas must contribute to counter these challenges and exploit opportunities. Perhaps this paper will be one of these contributions. This paper discusses the impact of the quality cost on revenue sharing as a most important incentive to configure business networks. No doubt that the costs directly affect the size of income generated by a business network, so this paper investigates the impact of quality costs on business networks revenue, and their impact on the decision to participate the revenue among the companies in the supply chain. This paper develops the quality cost approach to align with the modern era, the developed model includes five categories besides the well-known four categories (namely prevention costs, appraisal costs, internal failure costs, and external failure costs), a new category has been developed in this research as a new vision of the relationship between quality costs and innovations of industry. This new category is Recycle Cost. This paper is organized into six sections, Section I shows quality costs overview in the supply chain. Section II discusses revenue sharing between the parties in supply chain. Section III investigates the impact of quality costs in revenue sharing decision between partners in supply chain. The fourth section includes survey study and presents statistical results. Section V discusses the results and shows future opportunities for research. Finally, Section VI summarizes the theoretical and practical results of this paper.

Keywords: quality cost, recycle cost, revenue sharing, supply chain management

Procedia PDF Downloads 442
2340 Modeling of Sand Boil near the Danube River

Authors: Edina Koch, Károly Gombás, Márton Maller

Abstract:

The Little Plain is located along the Danube river, and this area is a “hotbed” of sand boil formation. This is due to the combination of a 100-250 m thick gravel layer beneath the Little Plain with a relatively thin blanket of poor soil spreading the gravel with variable thickness. Sand boils have a tradition and history in this area. It was possible to know which sand boil started and stopped working at what water level, and some of them even have names. The authors present a 2D finite element model of groundwater flow through a selected cross-section of the Danube river, which observed activation of piping phenomena during the 2013 flood event. Soil parametrization is based on a complex site investigation program conducted along the Danube River in the Little Plain.

Keywords: site characterization, groundwater flow, numerical modeling, sand boil

Procedia PDF Downloads 94
2339 Surface Morphology Refinement and Laves Phase Control of Inconel 718 during Plasma Arc Additive Manufacturing by Alternating Magnetic Field

Authors: Yi Zheng

Abstract:

Improving formability and mechanical properties have always been one of the challenges in the field of additive manufacturing (AM) of nickel-based superalloys. In this work, the effect of a coaxially coupled alternating magnetic field (AMF) on surface morphology and mechanical properties of plasma arc-based additive manufactured Inconel 718 deposit were investigated. Results show that the Lorentz force induced by AMF strongly alters the flow behavior of the plasma jet and the molten pool, suppressing the tendency of the liquid metal in the molten pool to flow down on the two sides face of the deposit, which in turn remarkably improved the surface accuracy of the thin-walled deposit. Furthermore, the electromagnetic stirring induced by AMF can effectively enhance the convection between the dendrites, which could not only contribute to the formation of finer dendrites but also alleviate the enrichment of the elements (i.e., Nb and Mo) at the solid-liquid interface and inhibits the precipitation of Laves phase. The smallest primary dendritic arm spacing (~13 μm) and lowest Laves phases area fraction (3.12%) were witnessed in the bottom region of the AMF-assisted deposit. The mechanical test confirmed that the deposit's micro-hardness and tensile properties were moderately improved compared with the counterpart without AMF.

Keywords: additive manufacturing, inconel 718, alternating magnetic field, laves phase

Procedia PDF Downloads 78
2338 Physicochemical and Optical Characterization of Rutile TiO2 Thin Films Grown by APCVD Technique

Authors: Dalila Hocine, Mohammed Said Belkaid, Abderahmane Moussi

Abstract:

In this study, pure rutile TiO2 thin films were directly synthesized on silicon substrates by Atmospheric Pressure Chemical Vapor Deposition technique (APCVD) using TiCl4 as precursor. We studied the physicochemical properties and the optical properties of the produced coatings by means of standard characterization techniques of Fourier Transform Infrared Spectroscopy (FTIR) combined with UV-Vis Reflectance Spectrophotometry. The absorption peaks at 423 cm-1 and 610 cm-1 were observed for the rutile TiO2 thin films, by FTIR measurements. The absorption peak at 739 cm-1 due to the vibration of the Ti-O bonds, was also detected. UV-Vis Reflectance Spectrophotometry is employed for measuring the optical band gap from the measurements of the TiO2 films reflectance. The optical band gap was then extracted from the reflectance data for the TiO2 sample. It was estimated to be 3.05 eV which agrees with the band gap of commercial rutile TiO2 sample.

Keywords: titanium dioxide, physicochemical properties, APCVD, FTIR, band gap

Procedia PDF Downloads 393
2337 Research of Applicable Ground Reinforcement Method in Double-Deck Tunnel Junction

Authors: SKhan Park, Seok Jin Lee, Jong Sun Kim, Jun Ho Lee, Bong Chan Kim

Abstract:

Because of the large economic losses caused by traffic congestion in metropolitan areas, various studies on the underground network design and construction techniques has been performed various studies in the developed countries. In Korea, it has performed a study to develop a versatile double-deck of deep tunnel model. This paper is an introduction to develop a ground reinforcement method to enable the safe tunnel construction in the weakened pillar section like as junction of tunnel. Applicable ground reinforcement method in the weakened section is proposed and it is expected to verify the method by the field application tests.

Keywords: double-deck tunnel, ground reinforcement, tunnel construction, weakened pillar section

Procedia PDF Downloads 408
2336 Effect of Annealing Temperature on Microstructural Evolution of Nanoindented Cu/Si Thin Films

Authors: Woei-Shyan Lee, Yu-Liang Chuang

Abstract:

The nano-mechanical properties of as-deposited Cu/Si thin films indented to a depth of 2000 nm are investigated using a nanoindentation technique. The nanoindented specimens are annealed at a temperature of either 160 °C or 210°C, respectively. The microstructures of the as-deposited and annealed samples are then examined via transmission electron microscopy (TEM). The results show that both the loading and the unloading regions of the load-displacement curve are smooth and continuous, which suggests that no debonding or cracking occurs during nanoindentation. In addition, the hardness and Young’s modulus of the Cu/Si thin films are found to vary with the nanoindentation depth, and have maximum values of 2.8 GPa and 143 GPa, respectively, at the maximum indentation depth of 2000 nm. The TEM observations show that the region of the Cu/Si film beneath the indenter undergoes a phase transformation during the indentation process. In the case of the as-deposited specimens, the indentation pressure induces a completely amorphous phase within the indentation zone. For the specimens annealed at a temperature of 160°C, the amorphous nature of the microstructure within the indented zone is maintained. However, for the specimens annealed at a higher temperature of 210°C, the indentation affected zone consists of a mixture of amorphous phase and nanocrystalline phase. Copper silicide (η-Cu3Si) precipitates are observed in all of the annealed specimens. The density of the η-Cu3Si precipitates is found to increase with an increasing annealing temperature.

Keywords: nanoindentation, Cu/Si thin films, microstructural evolution, annealing temperature

Procedia PDF Downloads 389
2335 Understanding the Performance and Loss Mechanisms in Ag Alloy CZTS Solar Cells: Photocurrent Generation, Charge Separation, and Carrier Transport

Authors: Kang Jian Xian, Huda Abdullah, Md. Akhtaruzzaman, Iskandar Yahya, Mohd Hafiz Dzarfan Othman, Brian Yulianto

Abstract:

The CZTS absorber layer doped with a silver (Ag) is one of the candidates that suggest improving the efficiency of thin films. Silver element functions to reduce antisite defects, increase grain size and create the plasmonic effect. In this work, an experimental study has been done to investigate the electrical and physical properties of CZTS, ACZTS, and AZTS. Ag replaces the Cu in (Cu1-xAgx)2ZnSnS4 (ACZTS) is up to x ≤1. ACZTS thin-films solar cells have been deposited by sol–the gel spin coating method. There are a total of 19 samples done with 11 significant percentages (0%, 10%, 20%… 100%) to show the whole phenomena of efficiency rate and nine specific percentages to find out the best concentration rate for Ag-doped. The obtained results can be helpful for better understanding ACZTS layers.

Keywords: CZTS, ACZTS, AZTS, silver, antisite, efficiency, thin-film solar cell

Procedia PDF Downloads 91
2334 Mott Transition in the VO2/LSCO Heterojunction

Authors: Yi Hu, Chun-Chi Lin, Shau-En Yeh, Shin Lee

Abstract:

In this study, p–n heterojunctions with La0.5Sr0.5CoO3 (LSCO) and W-doped VO2 thin films were fabricated by the radio frequency (r.f.) magnetron sputtering technique and sol-gel process, respectively. The thickness of VO2 and LSCO thin films are about 40 nm and 400 nm, respectively. Good crystalline match between LSCO and VO2 films was observed from the SEM. The built-in voltages for the junction are about 1.1 V and 2.3 V for the sample in the metallic and insulating state, respectively. The sample can undergo the current induced MIT during applying field when the sample was heated at 40 and 50ºC. This is in agreement with the value obtained from the difference in the work functions of LSCO and VO2. The band structure of the heterojunction was proposed based on the results of analysis.

Keywords: hetrojection, Mott transition, switching , VO2

Procedia PDF Downloads 588
2333 A Fast Chemiresistive H₂ Gas Sensor Based on Sputter Grown Nanocrystalline P-TiO₂ Thin Film Decorated with Catalytic Pd-Pt Layer on P-Si Substrate

Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra

Abstract:

In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.

Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor

Procedia PDF Downloads 257
2332 Structural, Optical and Electrical Properties of Gd Doped ZnO Thin Films Prepared by a Sol-Gel Method

Authors: S. M. AL-Shomar, N. B. Ibrahim, Sahrim Hj. Ahmad

Abstract:

ZnO thin films with various Gd doping concentration (0, 0.01, 0.03 and 0.05 mol/L) have been synthesized by sol–gel method on quartz substrates at annealing temperature of 600 ºC. X-ray analysis reveals that ZnO(Gd) films have hexagonal wurtzite structure. No peaks that correspond to Gd metal clusters or gadolinium acetylacetonate are detected in the patterns. The position of the main peak (101) shifts to higher angles after doping. The surface morphologies studied using a field emission scanning electron microscope (FESEM) showed that the grain size and the films thickness reduced gradually with the increment of Gd concentration. The roughness of ZnO film investigated by an atomic force microscopy (AFM) showed that the films are smooth and high dense grain. The roughness of doped films decreased from 6.05 to 4.84 rms with the increment of dopant concentration.The optical measurements using a UV-Vis-NIR spectroscopy showed that the Gd doped ZnO thin films have high transmittance (above 80%) in the visible range and the optical band gap increase with doping concentration from 3.13 to 3.39 eV. The doped films show low electrical resistivity 2.6 × 10-3Ω.cm.at high doping concentration.

Keywords: Gd doped ZnO, electric, optics, microstructure

Procedia PDF Downloads 471