Search results for: zero current switching

Authors: Numra Qayyum, Samina Sarwat, Noor ul Ain

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Bilingual speakers generally can speak both languages with the same competency without mixing them intentionally and making mistakes, but sometimes errors occur in language selection. This quantitative study particularly deals with the language errors made by Urdu-English bilinguals. In this research, researchers have given special attention to the part played by bottom-up priming and top-down cognitive control in these errors. Unstable Urdu-English bilingual participants termed pictures and were prompted to shift from one language to another under the pressure of time. Different situations were given to manipulate the participants. The long and short runs trials of the same language were also given before switching to another language. The study is concluded with the findings that bilinguals made more errors when switching to the first language from their second language, and these errors are large in number, especially when a speaker is switching from L2 (second language) to L1 (first language) after a long run. When the switching is reversed, i.e., from L2 to LI, it had no effect at all. These results gave the clear responsibility of all these errors to top-down cognitive control.

Keywords: bottom up priming, language error, language switching, top down cognitive control

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Authors: Arpan Bera, Rini Ganguly, Raja Chakraborty, Amlan J. Pal

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To deal with the increasing demands for the high-density non-volatile memory devices, we need nano-sites with efficient and stable charge storage capabilities. We prepared nanocrystals (NCs) of inorganic perovskite, CsPbCl₃ coated with Cs₄PbCl₆, by colloidal synthesis. Due to the type-I band alignment at the junction, this core-shell composite is expected to behave as a charge trapping site. Using Scanning Tunneling Spectroscopy (STS), we investigated voltage-controlled resistive switching in this heterostructure by tracking the change in its current-voltage (I-V) characteristics. By applying voltage pulse of appropriate magnitude on the NCs through this non-invasive method, different resistive states of this system were systematically accessed. For suitable pulse-magnitude, the response jumped to a branch with enhanced current indicating a high-resistance state (HRS) to low-resistance state (LRS) switching in the core-shell NCs. We could reverse this process by using a pulse of opposite polarity. These two distinct resistive states can be considered as two logic states, 0 and 1, which are accessible by varying voltage magnitude and polarity. STS being a local probe in space enabled us to capture this switching at individual NC site. Hence, we claim a bright prospect of these core-shell NCs made of inorganic halide perovskites in future high density memory application.

Keywords: Core-shell perovskite, CsPbCl₃-Cs₄PbCl₆, resistive switching, Scanning Tunneling Spectroscopy

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition

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Authors: Der-Feng Guo

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Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers.

Keywords: bulk barrier, heterostructure, optoelectronic switch, potential spike

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Authors: Zhemi Xu, Dewei Chu, Sean Li

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Well self-assembled pure and Mn-doped SnO2 nanocubes were synthesized by interface thermodynamic method, which is ideal for highly homogeneous large scale thin film deposition on flexible substrates for various electric devices. Mn-doped SnO2 shows very good resistive switching with high On/Off ratio (over 103), endurance and retention characteristics. More important, the resistive state can be tuned by multi-layer fabrication by alternate pure SnO2 and Mn-doped SnO2 nanocube layer, which improved the memory capacity of resistive switching effectively. Thus, such a method provides transparent, multi-level resistive switching for next generation non-volatile memory applications.

Keywords: metal oxides, self-assembly nanoparticles, multi-level resistive switching, multi-layer thin film

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Authors: Crista Arangala

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Light switching games are both popular and well studied. This paper introduces a cellular automata called Langton’s turmite to several different light switching scenarios and discusses when Langton’s turmite can solve these games.

Keywords: cellular automata, lights out, alien tiles, chaos, Langton's Turmite

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Authors: Ismail Aksoy, Haci Bodur, Nihan Altintaş

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This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: active snubber cell, boost converter, zero current switching, zero voltage switching

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Authors: Yasunori Kobori, Futoshi Fukaya, Takuya Arafune, Nobukazu Tsukiji, Nobukazu Takai, Haruo Kobayashi

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This paper proposes an EMI spread spectrum technique to enable to set notch frequencies using pulse coding method for DC-DC switching converters of communication equipment. The notches in the spectrum of the switching pulses appear at the frequencies obtained from empirically derived equations with the proposed spread spectrum technique using the pulse coding methods, the PWM (Pulse Width Modulation) coding or the PCM (Pulse Cycle Modulation) coding. This technique would be useful for the switching converters in the communication equipment which receives standard radio waves, without being affected by noise from the switching converters. In our proposed technique, the notch frequencies in the spectrum depend on the pulse coding method. We have investigated this technique to apply to the switching converters and found that there is good relationship agreement between the notch frequencies and the empirical equations. The notch frequencies with the PWM coding is equal to the equation F=k/(WL-WS). With the PCM coding, that is equal to the equation F=k/(TL-TS).

Keywords: notch frequency, pulse coding, spread spectrum, switching converter

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Authors: B. Manoj Kumar, C. Malavika, E. S. Kannan

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The objective of this study is to investigate the switching behavior of two vertically aligned memristors connected by a shared top electrode, a configuration that significantly deviates from the conventional single oxide layer sandwiched between two electrodes. The device is fabricated by bridging copper electrodes with mechanically exfoliated van der Waals metal (specifically tantalum disulfide and tantalum diselenide). The device demonstrates threshold-switching behavior in its I-V characteristics. When the input voltage signal is ramped with voltages below the threshold, the output current shows spiking behavior, resembling integrated and firing actions without extra circuitry. We also investigated the self-reset behavior of the device. Using a continuous constant voltage bias, we activated the device to the firing state. After removing the bias and reapplying it shortly afterward, the current returned to its initial state. This indicates that the device can spontaneously return to its resting state. The outcome of this investigation offers a fresh perspective on memristor-based device design and an efficient method to construct hardware for neuromorphic computing systems.

Keywords: integrated and firing, memristor, spiking behavior, threshold switching

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Authors: Jae-Chang Kwak, Yong-Seo Koo

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The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter

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Authors: Omotayo Olalere

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The relevance of code-switching for intercultural communication through literary translation cannot be overemphasized. The translation of code-switching and its implications for translations studies have been studied in the context of African literature. In these cases, code-switching was examined in the more general terms of its usage in source text and not particularly in Ngugi’s novels and its translations. In addition, the functions of translation and code-switching in the lyrics of some popular African songs have been studied, but this study is related more with oral performance than with written literature. As such, little has been done on the German translation of code-switching in African works. This study intends to fill this lacuna by examining the concept of code-switching in the German translations in Ngugi’s Petals of Blood. The aim is to highlight the significance of code-switching as a phenomenon in this African (Ngugi’s) novel written in English and to also focus on its representation in the two German translations. The target texts to be used are Verbrannte Blueten and Land der flammenden Blueten. “Abrogration“ as a concept will play an important role in the analysis of the data. Findings will show that the ideology of a translator plays a huge role in representing the concept of “abrogration” in the translation of code-switching in the selected source text. The study will contribute to knowledge in translation studies by bringing to limelight the need to foreground aspects of language contact in translation theory and practice, particularly in the African context. Relevant translation theories adopted for the study include Bandia’s (2008) postcolonial theory of translation and Snell-Hornby”s (1988) cultural translation theory.

Keywords: code switching, german translation, ngugi wa thiong’o, petals of blood

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Authors: Jon Cobb, Nasir

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Due to higher switching frequencies, the conducted Electromagnetic interference (EMI) noise is generated in a converter. It degrades the performance of a switching converter. Therefore, it is an essential requirement to mitigate EMI noise of high performance converter. Moreover, it includes two types of emission such as common mode (CM) and differential mode (DM) noise. CM noise is due to parasitic capacitance present in a converter and DM noise is caused by switching current. However, there is dire need to understand the main cause of EMI noise. Hence, we propose a novel method to predict conducted EMI noise of different converter topologies during early stage. This paper also presents the comparison of conducted electromagnetic interference (EMI) noise due to different SMPS topologies. We also make an attempt to develop an EMI noise model for a converter which allows detailed performance analysis. The proposed method is applied to different converter, as an example, and experimental results are verified the novel prediction technique.

Keywords: EMI, electromagnetic interference, SMPS, switch-mode power supply, common mode, CM, differential mode, DM, noise

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Authors: Hsin-Ping Huang, Shyankay Jou

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Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.

Keywords: aluminum nitride, nonvolatile memory, resistive switching, thin films

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Authors: Abir Touati, Syed Jawad Hussain, Farid Touati, Ammar Bouallegue

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Although there has been a growing interest in the hybrid free-space optical link and radio frequency FSO/RF communication system, the current literature is limited to results obtained in moderate or cold environment. In this paper, using a soft switching approach, we investigate the effect of weather inhomogeneities on the strength of turbulence hence the channel refractive index under Qatar harsh environment and their influence on the hybrid FSO/RF availability. In this approach, either FSO/RF or simultaneous or none of them can be active. Based on soft switching approach and a finite state Markov Chain (FSMC) process, we model the channel fading for the two links and derive a mathematical expression for the outage probability of the hybrid system. Then, we evaluate the behavior of the hybrid FSO/RF under hazy and harsh weather. Results show that the FSO/RF soft switching renders the system outage probability less than that of each link individually. A soft switching algorithm is being implemented on FPGAs using Raptor code interfaced to the two terminals of a 1Gbps/100 Mbps FSO/RF hybrid system, the first being implemented in the region. Experimental results are compared to the above simulation results.

Keywords: atmospheric turbulence, haze, hybrid FSO/RF, outage probability, refractive index

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Authors: Yasunori Kobori, Murong Li, Feng Zhao, Shu Wu, Nobukazu Takai, Haruo Kobayashi

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This paper proposes an electrolytic capacitor-less transformer-less AC-DC LED driver with a current ripple canceller. The proposed LED driver includes a diode bridge, a buck-boost converter, a negative feedback controller and a current ripple cancellation circuit. The current ripple canceller works as a bi-directional current converter using a sub-inductor, a sub-capacitor and two switches for controlling current flow. LED voltage is controlled in order to regulate LED current by the negative feedback controller using a current sense resistor. There are two capacitors with capacitance of 5 uF. We describe circuit topologies, operation principles and simulation results for our proposed circuit. In addition, we show the line regulation for input voltage variation from 85V to 130V. The output voltage ripple is 2V and the LED current ripple is 65 mA which is less than 20% of the average of LED current of 350 mA.

Keywords: DC-DC buck converter, four-level output voltage, single inductor multi output (SIMO), switching converter

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Authors: Jung-Min Yang

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Corrective control enables us to change the stable state behavior of an asynchronous sequential machine without modifying inner logic of the machine. This paper addresses corrective control for asynchronous machines with switching capability. The considered asynchronous machine consists of a set of different submachines and switches to each machine according to a constant switching sequence. The control goal is to design a corrective controller such that the closed-loop system can match the behavior of a reference model. The reachability of the switched asynchronous machine is described by a logic calculation of the reachability of submachines. The design procedure of the proposed corrective controller is outlined, and the applicability of the proposed scheme is validated in an example.

Keywords: switched asynchronous sequential machines, corrective control, state feedback, switching sequences

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Authors: B. Pavan Kumar Reddy, P. Michael Preetam Raj, Souri Banerjee, Souvik Kundu

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In this work, the fabrication and characterization of copper-doped zinc oxide (Cu:ZnO) based memristor devices with aluminum (Al) and indium tin oxide (ITO) metal electrodes are reported. The thin films of Cu:ZnO was synthesized using low-cost and low-temperature chemical process. The Cu:ZnO was then deposited onto ITO bottom electrodes using spin-coater technique, whereas the top electrode Al was deposited utilizing physical vapor evaporation technique. Ellipsometer was employed in order to measure the Cu:ZnO thickness and it was found to be 50 nm. Several surface and materials characterization techniques were used to study the thin-film properties of Cu:ZnO. To ascertain the efficacy of Cu:ZnO for memristor applications, electrical characterizations such as current-voltage (I-V), data retention and endurance were obtained, all being the critical parameters for next-generation memory. The I-V characteristic exhibits switching behavior with asymmetrical hysteresis loops. This work imputes the resistance switching to the positional drift of oxygen vacancies associated with respect to the Al/Cu:ZnO junction. Further, a non-linear curve fitting regression techniques were utilized to determine the equivalent circuit for the fabricated Cu:ZnO memristors. Efforts were also devoted in order to establish its potentiality for different electronic applications.

Keywords: copper doped, metal-oxides, oxygen vacancies, resistive switching

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Authors: Mohamed Salah Azzaz, Camel Tanougast, Tarek Hadjem

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In this paper, a new low-cost image encryption technique is proposed and analyzed. The developed chaos-based key generator provides complex behavior and can change it automatically via a random-like switching rule. The designed encryption scheme is called PCSS (Parametric Chaos-based Switching System). The performances of this technique were evaluated in terms of data security and privacy. Simulation results have shown the effectiveness of this technique, and it can thereafter, ready for a hardware implementation.

Keywords: chaos, encryption, security, image

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Authors: Jun Wang, Tingcun Wei

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The digital pulse width modulator (DPWM) is the crucial building block for digitally-controlled DC-DC switching converter, which converts the digital duty ratio signal into its analog counterpart to control the power MOSFET transistors on or off. With the increase of switching frequency of digitally-controlled DC-DC converter, the DPWM with higher time resolution is required. In this paper, a 15-bits DPWM with three-level hybrid structure is presented; the first level is composed of a7-bits counter and a comparator, the second one is a 5-bits delay line, and the third one is a 3-bits digital dither. The presented DPWM is designed and implemented using the PLL megafunction of FPGA (Field Programmable Gate Arrays), and the required frequency of clock signal is 128 times of switching frequency. The simulation results show that, for the switching frequency of 2 MHz, a DPWM which has the time resolution of 15 ps is achieved using a maximum clock frequency of 256MHz. The designed DPWM in this paper is especially useful for high-frequency digitally-controlled DC-DC switching converters.

Keywords: DPWM, digitally-controlled DC-DC switching converter, FPGA, PLL megafunction, time resolution

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Authors: Havisha Banda

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Recent advancements in technology have facilitated commerce around the globe. The online medium of commerce has provided and will continue to provide great opportunities for consumers and businesses. Advancements in technology enable apparel stores, for instance, to improve their online services by using personalized virtual models allowing consumers to visualize the product on the model to determine correct sizing and fit. In addition to many advantages in online shopping the consumers will also have to undergo many types of switching costs in this process of buying apparel online. This study is to identify such switching costs and switching benefits from traditional shopping to online shopping and to understand what the consumers value the most. The scope of this study is to understand the types of switching costs and the factors that actually allow the consumers to shift from brick and mortar to online shopping and also to understand why a certain set of customers consider to purchase offline. Hence this study helps to understand the perceived cost and perceived benefit relation that the consumer draws in purchasing the garments online. This will help the upcoming e-commerce sites and brick and mortar store to understand the various factors and formulate new policies and implement strategies in their own ways to attract the customers and to retain them. A sample of 35 is considered for the process of laddered interviews. In the era of e-commerce there are people who feel comfortable to shop in a retail store rather than online purchase. Few respondents who shop online do not prefer to shop apparel online. Few respondents said that they shop online only for apparels. Most of the variables match in terms of switching costs and also in regard to benefits.

Keywords: e-commerce, switching costs, switching benefits, apparel shopping

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Authors: Fang Liu, JiaJia Yao, GuanLin Wu, ZuMaoLi, XueYan Yang, HePeng Zhang, ZhiPeng Sun, JunShuai Xue

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The explosive increasing needs of data processing and information storage strongly drive the advancement of the binary logic system to multiple-valued logic system. Inherent negative differential resistance characteristic, ultra-high-speed switching time, and robust anti-irradiation capability make III-nitride resonant tunneling diode one of the most promising candidates for multi-valued logic devices. Here we report the monolithic integration of GaN resonant tunneling diodes in series to realize multiple negative differential resistance regions, obtaining at least three stable operating states. A multiply-by-three circuit is achieved by this combination, increasing the frequency of the input triangular wave from f0 to 3f0. The resonant tunneling diodes are grown by plasma-assistedmolecular beam epitaxy on free-standing c-plane GaN substrates, comprising double barriers and a single quantum well both at the atomic level. Device with a peak current density of 183kA/cm² in conjunction with a peak-to-valley current ratio (PVCR) of 2.07 is observed, which is the best result reported in nitride-based resonant tunneling diodes. Microwave oscillation event at room temperature was discovered with a fundamental frequency of 0.31GHz and an output power of 5.37μW, verifying the high repeatability and robustness of our device. The switching behavior measurement was successfully carried out, featuring rise and fall times in the order of picoseconds, which can be used in high-speed digital circuits. Limited by the measuring equipment and the layer structure, the switching time can be further improved. In general, this article presents a novel nitride device with multiple negative differential regions driven by the resonant tunneling mechanism, which can be used in high-speed multiple value logic field with reduced circuit complexity, demonstrating a new solution of nitride devices to break through the limitations of binary logic.

Keywords: GaN resonant tunneling diode, negative differential resistance, multiple-valued logic system, switching time, peak-to-valley current ratio

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Authors: Chih-Wei Cheng, Wei-Jen Chan, Yu-Han Huang, Yi-Tsung Lin, Yen-Wei Huang, Min-Cheng Chen, Shou-Zen Chang, G. Chern, Yuan-Chieh Tseng

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How to develop spin-orbit-torque (SOT) devices with the virtues of field-free, perpendicular magnetic anisotropy (PMA), and low switching current is one of the many challenges in spintronics today. We propose a CoFeB/Ta/CoFeB tri-layer antiferromagnetic SOT device that could meet the above requirements. The device’s PMA was developed by adopting CoFeB–MgO interface. The key to the success of this structure is to ensure that (i)changes of the inter-layer coupling(IEC) and CoFeB anisotropy can occur simultaneously; (ii) one of the CoFeB needs to have a slightly tilted moment in the beginning. When sufficient current is given, the SHEreverses the already-tiltedCoFeB, and the other CoFeB can be reversed simultaneously by the IEC with the field-free nature. Adjusting the thickness of Ta can modify the coupling state to reduce the switching current while the field-free nature was preserved. Micromagnetic simulation suggests that the Néel orange peel effect (NOPE) is non-negligible due to interface roughness and coupling effect in the presence of perpendicular anisotropy. Fortunately, the Néel field induced by the NOPE appears to favor the field-free reversal.

Keywords: CoFeB, spin-orbit torque, antiferromagnetic, MRAM, trilayer

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Authors: Vladimir Mantsevich, Natalya Maslova, Petr Arseyev

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We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations between localized electrons by means of Heisenberg equations for pseudo operators with constraint. Special role of multi-electronic states was demonstrated. Various single-electron levels location relative to the sample Fermi level and to the applied bias value in symmetric tunneling contact were investigated. Rabi frequency tuning results in the single-electron energy levels spacing. We revealed the appearance of negative tunneling conductivity and demonstrated multiple switching "on" and "off" of the tunneling current depending on the Coulomb correlations value, Rabi frequency amplitude and energy levels spacing. We proved that Coulomb correlations strongly influence the system behavior. We demonstrated the presence of multi-stability in the coupled QDs with Coulomb correlations when single value of the tunneling current amplitude corresponds to the two values of Rabi frequency in the case when both single-electron energy levels are located slightly above eV and are close to each other. This effect disappears when the single-electron energy levels spacing increases.

Keywords: Coulomb correlations, negative tunneling conductivity, quantum dots, rabi frequency

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Authors: Robert O. Abolade, Olumide O. Ajayi, Zacheaus K. Adeyemo, Solomon A. Adeniran

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Link adaptation is an important strategy for achieving robust wireless multimedia communications based on quality of service (QoS) demand. Scheme switching in multiple-input multiple-output (MIMO) systems is an aspect of link adaptation, and it involves selecting among different MIMO transmission schemes or modes so as to adapt to the varying radio channel conditions for the purpose of achieving QoS delivery. However, finding the most appropriate switching method in MIMO links is still a challenge as existing methods are either computationally complex or not always accurate. This paper presents an intelligent switching method for the MIMO system consisting of two schemes - transmit diversity (TD) and spatial multiplexing (SM) - using fuzzy logic technique. In this method, two channel quality indicators (CQI) namely average received signal-to-noise ratio (RSNR) and received signal strength indicator (RSSI) are measured and are passed as inputs to the fuzzy logic system which then gives a decision – an inference. The switching decision of the fuzzy logic system is fed back to the transmitter to switch between the TD and SM schemes. Simulation results show that the proposed fuzzy logic – based switching technique outperforms conventional static switching technique in terms of bit error rate and spectral efficiency.

Keywords: channel quality indicator, fuzzy logic, link adaptation, MIMO, spatial multiplexing, transmit diversity

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Authors: G. Sarwar, C. Mateus, N. Todorovic

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The paper examines the asymmetries in size, value and momentum premium over the economic cycles in the UK and their macroeconomic determinants. Using Markov switching approach we find clear evidence of cyclical variations of the three premiums, most noticeably variations in size premium. We associate Markov switching regime 1 with economic upturn and regime 2 with economic downturn as per OECD’s Composite Leading Indicator. The macroeconomic indicators prompting such cyclicality the most are interest rates, term structure and credit spread. The role of GDP growth, money supply and inflation is less pronounced in our sample.

Keywords: macroeconomic determinants, Markorv Switching, size, value

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Authors: Renkai Wang, Tingcun Wei

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In this paper, a digital control algorithm based on delta-operator is presented for high-frequency digitally-controlled DC-DC switching converters. The stability and the controlling accuracy of the DC-DC switching converters are improved by using the digital control algorithm based on delta-operator without increasing the hardware circuit scale. The design method of voltage compensator in delta-domain using PID (Proportion-Integration- Differentiation) control is given in this paper, and the simulation results based on Simulink platform are provided, which have verified the theoretical analysis results very well. It can be concluded that, the presented control algorithm based on delta-operator has better stability and controlling accuracy, and easier hardware implementation than the existed control algorithms based on z-operator, therefore it can be used for the voltage compensator design in high-frequency digitally- controlled DC-DC switching converters.

Keywords: digitally-controlled DC-DC switching converter, digital voltage compensator, delta-operator, finite word length, stability

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Authors: Saghar Heidari

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In this paper, we study the valuation problem of European continuous-installment options under Markov-modulated models with a partial differential equation approach. Due to the opportunity for continuing or stopping to pay installments, the valuation problem under regime-switching models can be formulated as coupled partial differential equations (CPDE) with free boundary features. To value the installment options, we express the truncated CPDE as a linear complementarity problem (LCP), then a finite element method is proposed to solve the resulted variational inequality. Under some appropriate assumptions, we establish the stability of the method and illustrate some numerical results to examine the rate of convergence and accuracy of the proposed method for the pricing problem under the regime-switching model.

Keywords: continuous-installment option, European option, regime-switching model, finite element method

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Authors: John Mambambo

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Debates on the link between Bantu languages are often epitomized by animated theoretical critiques, including the language zoning and groupings. This evaluative, qualitative inquiry hovers above theoretical critiques to offer the sparsely studied ChiShona and isiXhosa code-switching nexus, a yawning gap in scholarship. Using interviews, questionnaires and observations, data germane to the study were collected from a purposively selected group of Shona speakers who had resided in Xhosa-speaking communities for not less than a year. Deploying Myers-Scotton’s Markedness theory, the paper gazes into the pragmatic linguistic affinity that is affirmed through the Shona-Xhosa code-switching in Cape Town. The assorted social variables motivating bilingual speakers to code-switch in Cape Town are also explored in this study. The study unveils that Shona speakers are motivated to code-switch by the linguistic affinity between ChiShona and isiXhosa. Other socio-political justifications also give an impetus to this phenomenon. The Matrix Language Frame Model affirms that ChiShona is the base while isiXhosa is the embedded language during code-switching. This paper is a momentous advancement of the extant literature on code-switching. It is a unique contribution to the nexus between ChiShona and isiXhosa languages, providing fresh insights into the discourse on African language comparison studies.

Keywords: code-switching, chishona, isiXhosa, bilingualism

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Authors: P. Satish Kumar, K. Ramakrishna, Ch. Lokeshwar Reddy, G. Sridhar

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This paper presents two different sequential switching hybrid-modulation strategies and implemented for cascaded multilevel inverters. Hybrid modulation strategies represent the combinations of Fundamental-Frequency Pulse Width Modulation (FFPWM) and Multilevel Sinusoidal-Modulation (MSPWM) strategies, and are designed for performance of the well-known Alternative Phase Opposition Disposition (APOD), Phase Shifted Carrier (PSC). The main characteristics of these modulations are the reduction of switching losses with good harmonic performance, balanced power loss dissipation among the devices with in a cell, and among the series-connected cells. The feasibility of these modulations is verified through spectral analysis, power loss analysis and simulation.

Keywords: cascaded multilevel inverters, hybrid modulation, power loss analysis, pulse width modulation

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Authors: Seyedmilad Kazemisangdehi, Seyedmehdi Kazemisangdehi

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Flux switching permanent magnet machines are considered for wide range of applications because of their outstanding merits including high torque/power densities, high efficiency, simple and robust rotor structure. Therefore, several topologies have been proposed like the PM exited flux switching machine, hybrid excited flux switching type, and so on. Recently, a novel laminated segmented rotor flux switching permanent magnet machine was introduced. It features flux barriers on rotor structure to enhance the performances of machine including torque ripple reduction and also torque and efficiency improvements at the same time. This is while, the design of barriers was not optimized by the authors. Therefore, in this paper three coefficients regarding the position of the barriers are considered for optimization. The effect of each coefficient on the performance of this machine is investigated by finite element method and finally an optimized design of flux barriers based on these three coefficients is proposed from different points of view including electromagnetic torque maximization and cogging torque/torque ripple minimization. At optimum design from maximum developed torque aspect, this machine generates 0.65 Nm torque higher than that of the not-optimized design with an almost 0.4 % improvement in efficiency.

Keywords: finite element analysis, FSPM, laminated segmented rotor flux switching permanent magnet machine, optimization

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