Search results for: enhancement type MOSFET

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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Authors: Petr Vaculik

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The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber

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Authors: Abdelghafour Galadi

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In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

Keywords: power MOSFET, drift layer, quasi-saturation effect, SPICE model

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Multi-gate SOI MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with a scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high -k dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multi-gate structures is square GAA SOI MOSFET that is a strong candidate for the next generation nanoscale devices; show an even stronger control of short channel effects. In this paper, GAA SOI MOSFET structure with using high -k dielectrics materials Al2O3 (k~9), HfO2 (k~20), La2O3 (k~30) and metal gate TiN are simulated by using 3-D device simulator DevEdit and Atlas of SILVACO TCAD tools. Square GAA SOI MOSFET transistor with High-k HfO2 gate dielectrics and TiN metal gate exhibits significant improvements performances compared to Al2O3 and La2O3 dielectrics for the same structure. Simulation results of GAA SOI MOSFET transistor with HfO2 dielectric show the increase in saturation current and Ion/Ioff ratio while leakage current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, square GAA SOI MOSFET, high-k dielectric, Silvaco software

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Authors: Dheeraj Sharma, Santosh Kumar Vishvakarma

Abstract:

We present a detailed analysis of analog and radiofrequency (RF) performance with different gate lengths for nanowire cylindrical gate (CylG) gate-all-around (GAA) MOSFET. CylG GAA MOSFET not only suppresses the short channel effects (SCEs), it is also a good candidate for analog/RF device due to its high transconductance (gm) and high cutoff frequency (fT ). The presented work would be beneficial for a new generation of RF circuits and systems in a broad range of applications and operating frequency covering the RF spectrum. For this purpose, the analog/RF figures of merit for CylG GAA MOSFET is analyzed in terms of gate to source capacitance (Cgs), gate to drain capacitance (Cgd), transconductance generation factor gm = Id (where Id represents drain current), intrinsic gain, output resistance, fT, maximum frequency of oscillation (fmax) and gain bandwidth (GBW) product.

Keywords: Gate-All-Around MOSFET, GAA, output resistance, transconductance generation factor, intrinsic gain, cutoff frequency, fT

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

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Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

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The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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Authors: L. Boyaci

Abstract:

Two basic equipment of electrical power subsystem of space satellites are Power Conditioning Unit (PCU) and Power Distribution Unit (PDU). Today, the main switching element used in power equipment in satellites is silicon (Si) based radiation-hardened MOSFET. GaNFETs have superior performances over MOSFETs in terms of their conduction and switching characteristics. GaNFET has started to take MOSFET’s place in many applications in industry especially by virtue of its switching performances. If GaNFET can also be used in equipment for space applications, this would be great revolution for future space power subsystem designs. In this study, the effect of proton irradiation on Gallium Nitride based power transistors was investigated. Four commercial enhancement mode GaN power transistors from Efficient Power Conversion Corporation (EPC) are irradiated with 30MeV protons while devices are switching. Flux of 8.2x10⁹ protons/cm²/s is applied for 12.5 seconds to reach ultimate fluence of 10¹¹ protons/cm². Vgs-Ids characteristics are measured and recorded for each device before, during and after irradiation. It was observed that if there would be destructive events. Proton induced permanent damage on devices is not observed. All the devices remained healthy and continued to operate. For two of these devices, further irradiation is applied with same flux for 30 minutes up to a total fluence level of 1.476x10¹³ protons/cm². We observed that GaNFETs are fully functional under this high level of radiation and no destructive events and irreversible failures took place for transistors. Results reveal that irradiated GaNFET in this experiment has radiation tolerance under proton testing and very important candidate for being one of the future power switching element in space.

Keywords: enhancement mode GaN power transistors, proton irradiation effects, radiation tolerance

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Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine

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This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH₄VO₃ precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO₂ (B) with V₂O₅ and an amorphous phase. The BET surface area is found to be 67.67 m²/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO₂ sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO₂ sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2(B), MOSFET, gate voltage, humidity sensor

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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This paper proposes one stage and two stage CMOS Complementary Regulated Cascode Distributed Amplifier (CRCDA) design based on Inductive and Transformer coupling techniques. Usually, Distributed amplifier is based on inductor coupling between gate and gate of MOSFET and between drain and drain of MOSFET. But this paper propose some new idea, by coupling with differential primary windings of transformer between gate and gate of MOSFET first stage and second stage of regulated cascade amplifier and by coupling with differential secondary windings transformer of MOSFET between drain and drain of MOSFET first stage and second stage of regulated cascade amplifier. This paper also proposes polynomial modeling of Silicon Transformer passive equivalent circuit from Nanyang Technological University which is used to extract frequency response of transformer. Cadence simulation results are used to verify validity of transformer polynomial modeling which can be used to design distributed amplifier without Cadence. 4 parameters of scattering matrix of 2 port of the propose circuit is derived as a function of 4 parameters of impedance matrix.

Keywords: CMOS regulated cascode distributed amplifier, silicon transformer modeling with polynomial, low power consumption, distribute amplification technique

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Authors: Alok Kumar Kamal, Vinod Kumar

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The trench gate MOSFET has shown itself as the most appropriate power device for low to medium voltage power applications due to its lowest possible ON resistance among all power semiconductor devices. In this research work a double-epilayer PSGT structure using a thin layer of N+ polysilicon as gate material. The total ON-state resistance (RON) of UMOSFET can be reduced by optimizing the epilayer thickness. The optimized structure of Double-Epilayer exhibits a 25.8% reduction in the ON-state resistance at Vgs=5V and improving the switching characteristics by reducing the Reverse transfer capacitance (Cgd) by 7.4%.

Keywords: Miller-capacitance, double-Epilayer;switching characteristics, power trench MOSFET (U-MOSFET), on-state resistance, blocking voltage

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Authors: Azizi Cherifa, O. Benzaoui

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The thermal aspects in the design of power circuits often deserve as much attention as pure electric components aspects as the operating temperature has a direct influence on their static and dynamic characteristics. MOSFET is fundamental in the circuits, it is the most widely used device in the current production of semiconductor components using their honorable performance. The aim of this contribution is devoted to the effect of the temperature on the properties of MOSFETs. The study enables us to calculate the drain current as function of bias in both linear and saturated modes. The effect of temperature is evaluated using a numerical simulation, using the laws of mobility and saturation velocity of carriers as a function of temperature.

Keywords: temperature, MOSFET, mobility, transistor

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Authors: M. Kessi

Abstract:

We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology.

Keywords: single-gate MOSFET, magnetic field, hall field, Lorentz force

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Authors: Fatma Soltani

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In power electronics the DC-DC converters or choppers are now employed in large areas, particularly in the field of electricity generation by wind and solar energy conversion. Photovoltaic generators (GPV) can deliver maximum power for a point on the characteristic P = f (Vpv), called maximum power point (MPP), or climatic variations, entraiment fluctuation PPM. To remedy this problem is interposed between the generator and receiver a DC-DC converter. The converter is usually used a simple MOSFET chopper. However, the MOSFET can be applied in the field of low power when you need a high switching frequency but becomes highly dissipative when should block large voltages For PV generators medium and high power, the use of IGBT chopper is by far the most recommended. To reduce stress on semiconductor components using several choppers series connected in parallel is known as interleaved chopper. These choppers lead to rotas.

Keywords: converter DC-DC entrelaced

, photovoltaic generators, IGBT, optimisation

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Authors: S.Pandeeswari, Raju Padma

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In this paper a new solution to implement and control single-stage electronic ballast based on the integration of a buck-boost power factor correction stage and a half bridge resonant inverter is presented. The control signals are obtained using the inverter resonant current by means of a saturable transformer. Core saturation is used to control the required dead time between the control pulses on both switches. The turn-on time of one of the inverter switches is controlled to provide proper cathode preheating during the lamp ignition process. No special integrated circuits are required to control the ballast and the total number of components is minimized. Analysis and basic design of phase cut dimmer.

Keywords: MOSFET dimmer, PIC 16F877A, voltage regulator, bridge rectifier

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Authors: Huangmei Liu, Si Liu, Jia’nan Liu

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The present experiment investigated and compared the effectiveness of two kinds of methods of attention control: Task distraction and visual enhancement. In the study, the effectiveness of task distractions to explicit features and of visual enhancement to implicit features of the same group of Chinese characters were compared based on their effect on the participants’ reaction time, subjective confidence rating, and verbal report. We found support that the visual enhancement on implicit features did overcome the contrary effect of training distraction and led to awareness of those implicit features, at least to some extent.

Keywords: task distraction, visual enhancement, attention, awareness, learning

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Authors: S. Shahzadi, J. Rizk

Abstract:

This paper describes the pulse width modulated control of a three phase, 4 polar DC brushless motor. To implement this practically the Atmel’s AVR ATmega 328 microcontroller embedded on an Arduino Eleven board is utilized. The microcontroller programming is done in an open source Arduino IDE development environment. The programming logic effectively manipulated a six MOSFET bridge which was used to energize the stator windings as per control requirements. The results obtained showed accurate, precise and efficient pulse width modulated operation. Another advantage offered by this pulse width modulated control was the efficient speed control of the motor. By varying the time intervals between successive commutations, faster energizing of the stator windings was possible thereby leading to quicker rotor alignment with these energized phases and faster revolutions.

Keywords: brushless DC motors, commutation, MOSFET, PWM

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Authors: C. G. Jinimole, A. Harsha

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One of the key problems facing in the analysis of Computed Tomography (CT) images is the poor contrast of the images. Image enhancement can be used to improve the visual clarity and quality of the images or to provide a better transformation representation for further processing. Contrast enhancement of images is one of the acceptable methods used for image enhancement in various applications in the medical field. This will be helpful to visualize and extract details of brain infarctions, tumors, and cancers from the CT image. This paper presents a comparison study of five contrast enhancement techniques suitable for the contrast enhancement of CT images. The types of techniques include Power Law Transformation, Logarithmic Transformation, Histogram Equalization, Contrast Stretching, and Laplacian Transformation. All these techniques are compared with each other to find out which enhancement provides better contrast of CT image. For the comparison of the techniques, the parameters Peak Signal to Noise Ratio (PSNR) and Mean Square Error (MSE) are used. Logarithmic Transformation provided the clearer and best quality image compared to all other techniques studied and has got the highest value of PSNR. Comparison concludes with better approach for its future research especially for mapping abnormalities from CT images resulting from Brain Injuries.

Keywords: computed tomography, enhancement techniques, increasing contrast, PSNR and MSE

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Authors: Mohammad A. U. Khan, Tariq M. Khan, Yinan Kong

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Fingerprint image enhancement is one of the most important step in an automatic fingerprint identification recognition (AFIS) system which directly affects the overall efficiency of AFIS. The conventional fingerprint enhancement like Gabor and Anisotropic filters do fill the gaps in ridge lines but they fail to tackle scar lines. To deal with this problem we are proposing a method for enhancing the ridges and valleys with scar so that true minutia points can be extracted with accuracy. Our results have shown an improved performance in terms of enhancement.

Keywords: fingerprint image enhancement, removing noise, coherence, enhanced diffusion

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Authors: R. Ajgou, S. Sbaa, S. Ghendir, A. Chemsa, A. Taleb-Ahmed

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The speech enhancement algorithm is to improve speech quality. In this paper, we review some speech enhancement methods and we evaluated their performance based on Perceptual Evaluation of Speech Quality scores (PESQ, ITU-T P.862). All method was evaluated in presence of different kind of noise using TIMIT database and NOIZEUS noisy speech corpus.. The noise was taken from the AURORA database and includes suburban train noise, babble, car, exhibition hall, restaurant, street, airport and train station noise. Simulation results showed improved performance of speech enhancement for Tracking of non-stationary noise approach in comparison with various methods in terms of PESQ measure. Moreover, we have evaluated the effects of the speech enhancement technique on Speaker Identification system based on autoregressive (AR) model and Mel-frequency Cepstral coefficients (MFCC).

Keywords: speech enhancement, pesq, speaker recognition, MFCC

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Authors: Aleksei Samarin, Artyom Nazarenko, Valentin Malykh

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Image enhancement is becoming more and more popular, especially on mobile devices. Nowadays, it is a common approach to enhance an image using a convolutional neural network (CNN). Such a network should be of significant size; otherwise, a possibility for the artifacts to occur is overgrowing. The existing large CNNs are computationally expensive, which could be crucial for mobile devices. Another important flaw of such models is they are poorly interpretable. There is another approach to image enhancement, namely, the usage of predefined filters in combination with the prediction of their applicability. We present an approach following this paradigm, which outperforms both existing CNN-based and filter-based approaches in the image enhancement task. It is easily adaptable for mobile devices since it has only 47 thousand parameters. It shows the best SSIM 0.919 on RANDOM250 (MIT Adobe FiveK) among small models and is thrice faster than previous models.

Keywords: universal filter, image enhancement, neural networks, computer vision

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Authors: Amit Kamra, V. K. Jain, Pragya

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Mammography is widely used technique for breast cancer screening. There are various other techniques for breast cancer screening but mammography is the most reliable and effective technique. The images obtained through mammography are of low contrast which causes problem for the radiologists to interpret. Hence, a high quality image is mandatory for the processing of the image for extracting any kind of information from it. Many contrast enhancement algorithms have been developed over the years. In the present work, an efficient morphology based technique is proposed for contrast enhancement of masses in mammographic images. The proposed method is based on Multiscale Morphology and it takes into consideration the scale of the structuring element. The proposed method is compared with other state-of-the-art techniques. The experimental results show that the proposed method is better both qualitatively and quantitatively than the other standard contrast enhancement techniques.

Keywords: enhancement, mammography, multi-scale, mathematical morphology

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Authors: So-Jeong Kim, Nak-Kwan Chung, Jintae Kim, Juyoung Yun

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The metal nanoplates are potentially used for electroluminescence enhancement of OLEDs owing to the localized surface plasmon resonance. In our study, enhanced electroluminescence in blue organic light-emitting diodes is demonstrated by incorporating silver nanoplates into poly(3,4-ethylene dioxythiophene):polystyrene sulfonic acid. To have surface plasmon resonance absorption peak matching with photoluminescent (PL) peak of blue, Ag nanoplates with triangular shape are used in this study. Finally, about 30 % enhancement in electroluminescence intensity and current efficiency for blue emission devices is obtained via Ag nanoplates.

Keywords: efficiency enhancement, nanoplate, OLED, surface plasmon resonance

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Authors: Bentoutou Houari, Boutte Aissa, Belaidi El Yazid, Limam Lakhdar

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The integration of a load switch with a DC/DC buck converter using LM2596 for power distribution in low-cost educational nanosatellites is a technique that aims to efficiently manage the power distribution system in these small spacecraft. The converter is based on the LM2596 regulator and designed to step down the input voltage of +16.8V to +12V, +5V, and +3.3V output, which are suitable for the nanosatellite's various subsystems. The load switch is based on MOSFET and is used to turn on or off the power supply to a particular load and protect the nanosatellite from power surges. A prototype of a +12V DC/DC buck converter with a high side load switch has been realized and tested, which meets our requirements and shows a good efficiency of 89%. In addition, the prototype features a capacitor between the source and gate of the MOSFET, which has effectively reduced the inrush current, demonstrating the effectiveness of this approach in reducing surges of current when the load is connected. The output current and voltage were measured at 0.7A and 11.89V, respectively, making this design suitable for use in low-cost educational nanosatellites.

Keywords: DC/DC buck converter, load switch, LM2596, electrical power subsystems, nanosatellite, inrush current

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Authors: Sachin Kamble, Raghothama Anekal, Shivakumar Bhavi

Abstract:

Thermal management of electronic components packaged inside an IP65 rated enclosure is of prime importance in industrial applications. Electrical enclosure protects the multiple board configurations such as inverter, power, controller board components, busbars, and various power dissipating components from harsh environments. Industrial environments often experience relatively warm ambient conditions, and the electronic components housed in the enclosure dissipate heat, due to which the enclosures and the components require thermal management as well as reduction of internal ambient temperatures. Design of Experiments based thermal simulation approach with MOSFET arrangement, Heat sink design, Enclosure Volume, Copper and Aluminum Spreader, Power density, and Printed Circuit Board (PCB) type were considered to optimize air temperature inside the IP65 enclosure to ensure conducive operating temperature for controller board and electronic components through the different modes of heat transfer viz. conduction, natural convection and radiation using Ansys ICEPAK. MOSFET’s with the parallel arrangement, IP65 enclosure molded heat sink with rectangular fins on both enclosures, specific enclosure volume to satisfy the power density, Copper spreader to conduct heat to the enclosure, optimized power density value and selecting Aluminum clad PCB which improves the heat transfer were the contributors towards achieving a conducive operating temperature inside the IP-65 rated Motor Inverter enclosure. A reduction of 52 ℃ was achieved in internal ambient temperature inside the IP65 enclosure between baseline and final design parameters, which met the operative temperature requirements of the electronic components inside the IP-65 rated Motor Inverter.

Keywords: Ansys ICEPAK, aluminium clad PCB, IP 65 enclosure, motor inverter, thermal simulation

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Authors: Harshan Baskar, Anirudh S. Chakravarthy, Prateek Garg, Divyam Goel, Abhijith S. Raj, Kshitij Kumar, Lakshya, Ravichandra Parvatham, V. Sushant, Bijay Kumar Rout

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In this paper, we introduce a new computer vision task called nighttime dehaze-enhancement. This task aims to jointly perform dehazing and lightness enhancement. Our task fundamentally differs from nighttime dehazing – our goal is to jointly dehaze and enhance scenes, while nighttime dehazing aims to dehaze scenes under a nighttime setting. In order to facilitate further research on this task, we release a new benchmark dataset called Reside-β Night dataset, consisting of 4122 nighttime hazed images from 2061 scenes and 2061 ground truth images. Moreover, we also propose a new network called NDENet (Nighttime Dehaze-Enhancement Network), which jointly performs dehazing and low-light enhancement in an end-to-end manner. We evaluate our method on the proposed benchmark and achieve SSIM of 0.8962 and PSNR of 26.25. We also compare our network with other baseline networks on our benchmark to demonstrate the effectiveness of our approach. We believe that nighttime dehaze-enhancement is an essential task, particularly for autonomous navigation applications, and we hope that our work will open up new frontiers in research. Our dataset and code will be made publicly available upon acceptance of our paper.

Keywords: dehazing, image enhancement, nighttime, computer vision

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Authors: Gaya Tridinanti

Abstract:

Enhanching English vocabulary in early childhood is the main problem often faced by teachers. Thus, the purpose of this study was to determine the enhancement of children’s English vocabulary acquisition by using digital storytelling. This type of research was an action research. It consisted of a series of four activities done in repeated cycles: planning, implementation, observation, and reflection. The subject of the study consisted of 30 students of B group (5-6 years old) attending Happy Kids Kindergarten Palembang, Indonesia. This research was conducted in three cycles. The methods used for data collection were observation and documentation. Descriptive qualitative and quantitative methods were also used to analyse the data. The research showed that the digital storytelling learning activities could enhance the children’s English vocabulary acquisition. It is based on the data in which the enhancement in pre-cycle was 37% and 51% in Cycle I. In Cycle II it was 71% and in Cycle III it was 89.3%. The results showed an enhancement of about 14% from the pre-cycle to Cycle I, 20% from Cycle I to Cycle II, and enhancement of about 18.3% from Cycle II to Cycle III. The conclusion of this study suggests that digital storytelling learning method could enhance the English vocabulary acquisition of B group children at the Happy Kids Kindergarten Palembang. Therefore, digital storytelling can be considered as an alternative to improve English language learning in the classroom.

Keywords: acquisition, enhancing, digital storytelling, English vocabulary

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Authors: Yousif Mohamed Y. Abdallah, Razan Manofely, Rajab M. Ben Yousef

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X-Ray images are very popular as a first tool for diagnosis. Automating the process of analysis of such images is important in order to help physician procedures. In this practice, teeth segmentation from the radiographic images and feature extraction are essential steps. The main objective of this study was to study correction preprocessing of x-rays images using local adaptive filters in order to evaluate contrast enhancement pattern in different x-rays images such as grey color and to evaluate the usage of new nonlinear approach for contrast enhancement of soft tissues in x-rays images. The data analyzed by using MatLab program to enhance the contrast within the soft tissues, the gray levels in both enhanced and unenhanced images and noise variance. The main techniques of enhancement used in this study were contrast enhancement filtering and deblurring images using the blind deconvolution algorithm. In this paper, prominent constraints are firstly preservation of image's overall look; secondly, preservation of the diagnostic content in the image and thirdly detection of small low contrast details in diagnostic content of the image.

Keywords: enhancement, x-rays, pixel intensity values, MatLab

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Authors: Lakrim Abderrazak, Tahri Driss

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This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) MOSFET under SPICE. This model is based on the MOS model level 1 of SPICE, in which phenomena such as Drain Leakage Current IDSS, On-State Resistance RDSon, gate Threshold voltage VGSth, the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice -based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOS transistor C2M0025120D CREE (1200V, 90A).

Keywords: SiC power MOSFET, DC electro-thermal model, ABM Spice library, SPICE modelling, behavioural model, C2M0025120D CREE.

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Authors: S. Slimani, B. Djellouli

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Novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials like Ge is a very promising material due to its high mobility and is being considered to replace Si in the channel to achieve higher drive currents and switching speeds .Various approaches to circumvent the scaling limits to benchmark the performance of nanoscale MOSFETS with different channel materials, the optimized structure is simulated within nextnano in order to highlight the quantum effects on DG MOSFETs when Si is replaced by Ge and SiO2 is replaced by ZrO2 and HfO2as the gate dielectric. The results have shown that Ge MOSFET have the highest mobility and high permittivity oxides serve to maintain high drive current. The simulations show significant improvements compared with DGMOSFET using SiO2 gate dielectric and Si channel.

Keywords: high mobility, high-k, quantum effects, SOI-DGMOSFET

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