Search results for: dielectric resonators

Authors: Sreedevi P. Chakyar, Jolly Andrews, V. P. Joseph

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A compact method for measuring the relative permittivity of a dielectric material at different temperatures using a single circular Split Ring Resonator (SRR) metamaterial unit working as a test probe is presented in this paper. The dielectric constant of a material is dependent upon its temperature and the LC resonance of the SRR depends on its dielectric environment. Hence, the temperature of the dielectric material in contact with the resonator influences its resonant frequency. A single SRR placed between transmitting and receiving probes connected to a Vector Network Analyser (VNA) is used as a test probe. The dependence of temperature between 30 ^oC and 60 ^oC on resonant frequency of SRR is analysed. Relative permittivities ‘ε’ of test samples for different temperatures are extracted from a calibration graph drawn between the relative permittivity of samples of known dielectric constant and their corresponding resonant frequencies. This method is found to be an easy and efficient technique for analysing the temperature dependent permittivity of different materials.

Keywords: metamaterials, negative permeability, permittivity measurement techniques, split ring resonators, temperature dependent dielectric constant

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Authors: Yih-Chien Chen, Yue-Xuan Du, Min-Zhe Weng

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Carbon monoxide is a substance produced by the incomplete combustion. It is toxic even at concentrations of less than 100ppm. Since it is colorless and odorless, it is difficult to detect. CO sensors have been developed using a variety of physical mechanisms, including semiconductor oxides, solid electrolytes, and organic semiconductors. Many works have focused on using semiconducting sensors composed of sensitive layers such as ZnO, TiO₂, and NiO with high sensitivity for gases. However, these sensors working at high temperatures increased their power consumption. On the other hand, the dielectric resonator (DR) is attractive for gas detection due to its large surface area and sensitivity for external environments. Materials that are to be employed in sensing devices must have a high-quality factor. Numerous researches into the fergusonite-type structure and related ceramic systems have explored. Extensive research into RENbO₄ ceramics has explored their potential application in resonators, filters, and antennas in modern communication systems, which are operated at microwave frequencies. Nd(Ti₀.₅W₀.₅)O₄ ceramics were synthesized herein using the conventional mixed-oxide method. The Nd(Ti₀.₅W₀.₅)O₄ ceramics were prepared using the conventional solid-state method. Dielectric constants (εᵣ) of 15.4-19.4 and quality factor (Q×f) of 3,600-11,100 GHz were obtained at sintering temperatures in the range 1425-1525°C for 4 h. The dielectric properties of the Nd(Ti₀.₅W₀.₅)O₄ ceramics at microwave frequencies were found to vary with the sintering temperature. For a further understanding of these microwave dielectric properties, they were analyzed by densification, X-ray diffraction (XRD), and by making microstructural observations.

Keywords: dielectric constant, dielectric resonators, sensors, quality factor

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Authors: Abdul Manan

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Dielectric Resonators (DRs) have revolutionized the microwave wireless communication industry globally. There are three directions for research in ceramics for application in telecommunication industry Three key properties of ceramic dielectrics that determine their functionality at microwave and millimetrewave frequencies include relative permittivity (εr), unloaded quality factor Qu- the inverse of the dielectric loss (tanδ) and temperature coefficient of resonant frequency (τf). Each direction requires specific properties. These dielectric properties are affected by a number of factors. These includes tolerance factor, onset of structural phase transitions, dark core formation, processing conditions, raw materials and impurities, order/disorder behavior, compositional ordering, porosity, humidity, grain size, orientation of the crystallites, and grain boundaries. The data related to these factors is scattered. The main purpose of this review is to bring these together and present the effects of these factors on the microwave dielectric properties. Control of these factors is important for improvement in the microwave properties. This review would be very helpful to the novice researchers and technologists in the field.

Keywords: order disorder, sintering, defect, porosity, grain boundaries

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Authors: A. Chinig, J. Zbitou, A. Errkik, L. Elabdellaoui, A. Tajmouati, A. Tribak, M. Latrach

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This paper presents a new structure of microstrip band pass filter (BPF) based on coupled stepped impedance resonators. Each filter consists of two coupled stepped impedance resonators connected to microstrip feed lines. The coupled junction is utilized to connect the two BPFs to the antenna. This two band pass filters are designed and simulated to operate for the digital communication system (DCS) and Industrial Scientific and Medical (ISM) bands at 1.8 GHz and 2.45 GHz respectively. The proposed circuit presents good performances with an insertion loss lower than 2.3 dB and isolation between the two channels greater than 21 dB. The prototype of the optimized diplexer have been investigated numerically by using ADS Agilent and verified with CST microwave software.

Keywords: band pass filter, coupled junction, coupled stepped impedance resonators, diplexer, insertion loss, isolation

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Authors: D. Ravinder, K. S. Nagaraju

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Ni–Al ferrite with composition of NiAlxFe2-xO4 (x=0.2, 0.4 0.6, and 0.8, ) were prepared by citrate gel method. The dielectric properties for all the samples were investigated at room temperature as a function of frequency. The dielectric constant shows dispersion in the lower frequency region and remains almost constant at higher frequencies. The frequency dependence of dielectric loss tangent (tanδ) is found to be abnormal, giving a peak at certain frequency for mixed Ni-Al ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric loss tangent.

Keywords: ferrites, citrate method, lattice parameter, dielectric constant

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Authors: Igor Bilenko, Artem Shitikov, Michael Gorodetsky

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Optical whispering gallery mode (WGM) resonators combine very high optical quality factor (Q) with small size. Resonators made from low loss crystalline fluorites (CaF2, MgF2) may have Q as high as 1010 that make them unique devices for modern applications including ultrasensitive sensors, frequency control, and precision spectroscopy. While silicon is a promising material transparent from near infrared to terahertz frequencies, fundamental limit for Si WGM quality factor was not reached yet. In our paper, we presented experimental results on the preparation and testing of resonators at 1550 nm wavelength made from crystalline silicon grown and treated by different techniques. Q as high as 3x107 was demonstrated. Future steps need to reach a higher value and possible applications are discussed.

Keywords: optical quality factor, silicon optical losses, silicon optical resonator, whispering gallery modes

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Authors: Sukhleen Bindra Narang, Dalveer Kaur, Kunal Pubby

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Dielectric ceramic samples in the BaO-Re2O3-TiO2 ternary system were synthesized with structural formula Ba2-xRe4+2x/3Ti8O24 where Re= rare earth metal and Re= Sm and La where x varies from 0.0 to 0.6 with step size 0.1. Polycrystalline samples were prepared by the conventional solid state reaction technique. The dielectric, electrical and impedance analysis of all the samples in the frequency range 1KHz- 1MHz at room temperature (25°C) have been done to get the understanding of electrical conduction and dielectric relaxation and their correlation. Dielectric response of the samples at lower frequencies shows dielectric dispersion while at higher frequencies it shows dielectric relaxation. The ac conductivity is well fitted by the Jonscher law (σac = σdc+Aωn). The spectroscopic data in the impedance plane confirms the existence of grain contribution to the relaxation. All the properties are found out to be function of frequency as well as the amount of substitution.

Keywords: dielectric ceramics, dielectric constant, loss tangent, AC conductivity, impedance spectroscopy

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-Silicon Raman Laser, FTTH, GE-PON, Quasi-Phase-Matched Structure, resonator

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Authors: Peng Lu, Branimir Radisavljevic, Martin Seeger, Daniel Over, Torsten Votteler, Bernardo Galletti

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CO₂-based gas mixtures exhibit huge potential as the interruption medium for replacing SF₆ in high voltage switchgears. In this paper, the recovery characteristics of dielectric strength of CO₂-O₂ mixture in the post arc phase after the current zero are presented. As representative examples, the dielectric recovery curves under conditions of different gas filling pressures and short-circuit current amplitudes are presented. A series of dielectric recovery measurements suggests that the dielectric recovery rate is proportional to the mass flux of the blowing gas, and the dielectric strength recovers faster in the case of lower short circuit currents.

Keywords: CO₂ mixture, high voltage circuit breakers, dielectric recovery rate, short-circuit current, mass flux

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Authors: Minjin Kim, Jihwan Kim, Bongsoo Kim, Junho Suh

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We demonstrate nanomechanical resonators constructed with synthetic nanowires (NWs) and study their electro-mechanical properties at millikelvin temperatures. Nanomechanical resonators are fabricated using single-crystalline Au NWs and InAs NWs. The mechanical resonance signals are acquired by either magnetomotive or capacitive detection methods. The Au NWs are synthesized by chemical vapor transport method at 1100 °C, and they exhibit clean surface and single-crystallinity with little defects. Due to pristine surface quality, these Au NW mechanical resonators could provide an ideal model system for studying surface-related effects on the mechanical systems. The InAs NWs are synthesized by molecular beam epitaxy or metal organic chemical vapor deposition method. The InAs NWs show electronic conductance modulation resembling Coulomb blockade, which also manifests in the mechanical resonance signals in the form of damping and resonance frequency shift. Our result provides an evidence of strong electro-mechanical coupling in synthetic NW nanomechanical resonators.

Keywords: Au nanowire, InAs nanowire, nanomechanical resonator, synthetic nanowires

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Authors: Kaiyuan Chena, Senentxu Lanceros-Méndeza, Laijun Liub, Qi Zhanga

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0.6Bi(Mg1/2Ti1/2)O3-0.4Ba0.8Ca0.2(Nb0.125Ti0.875)O3 (0.6BMT-0.4BCNT) ceramics with a pseudo-cubic structure and re-entrant dipole glass behavior have been investigated via X-ray diffraction and dielectric permittivity-temperature spectra. It shows an excellent dielectric-temperature stability with small variations of dielectric permittivity (± 5%, 420 - 802 K) and dielectric loss tangent (tanδ < 2.5%, 441 - 647 K) in a wide temperature range. Three dielectric anomalies are observed from 290 K to 1050 K. The low-temperature weakly coupled re-entrant relaxor behavior was described using Vogel-Fulcher law and the new glass model. The mid- and high-temperature dielectric anomalies are characterized by isothermal impedance and electrical modulus. The activation energy of both dielectric relaxation and conductivity follows the Arrhenius law in the temperature ranges of 633 - 753 K and 833 - 973 K, respectively. The ultrahigh thermal stability of the dielectric permittivity is attributed to the weakly coupling of polar clusters, the formation of diffuse phase transition (DPT) and the local phase transition of calcium-containing perovskite.

Keywords: permittivity, relaxor, electronic ceramics, activation energy

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Authors: Saleem Rao, Mohammed Al-Ghadeer, Archan Banerjee, Hossein Fariborzi

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Materials imperfection, particularly two-level-system (TLS) defects in planer superconducting quantum circuits, contributes significantly to decoherence, ultimately limiting the performance of quantum computation and sensing. Oxides at air interfaces are among the host of TLS, and different material has been used to reduce TLS losses. Passivation with an inorganic layer is not an option to reduce these interface oxides; however, they can be etched away, but their regrowth remains a problem. Here, we report the chemisorption of molecular self-assembled monolayers (SAMs) at air interfaces of superconducting co-planer waveguide (CPW) resonators that suppress the regrowth of oxides and also modify the dielectric constant of the interface. With SAMs, we observed sustained order of magnitude improvement in quality factor -better than oxide etched interfaces. Quality factor measurements at millikelvin temperature and at single photon, XPS data, and TEM images of SAM passivated air interface sustenance our claim. Compatibility of SAM with micro-/nano-fabrication processes opens new ways to improve the coherence time in cQED.

Keywords: superconducting circuits, quality-factor, self-assembled monolayer, coherence

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Authors: Ying-Chieh Lee, Huei-Jyun Shih, Ting-Yang Wang, Christian Pithan

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This study focuses on the synthesis and characterization of Ca₀.₆Sr₀.₄₋ₓBaₓZrO₃ (x = 0.01, 0.04, 0.07, and 0.10) ceramics prepared via the solid-state method and sintered at 1450 °C. The impact of Sr substitution by Ba at the A-site of the perovskite structure on crystalline properties and microwave dielectric performance was investigated. The experimental results show the formation of a single-phase structure, Ca₀.₆₁₂Sr₀.₃₈₈ZrO₃(CSZ), across the entire range of x values. It is evident that the Ca₀.₆Sr₀.₃₉Ba₀.₀₁ZrO₃ ceramics exhibit the highest sintering density and the lowest porosity. These ceramics exhibit impressive dielectric properties, including a high permittivity of 28.38, low dielectric loss of 4.0×10⁻⁴, and a Q factor value of 22988 at 9~10GHz. The research reveals that the influences of Sr substitution by Ba in enhancing the microwave dielectric properties of Ca₀.₆₁₂Sr₀.₃₈₈ZrO₃ ceramics and the impedance curves clearly showed effects on the electrical properties.

Keywords: NPO dielectric material, (Ca₀.₆Sr₀.₄)ZrO₃, microwave dielectric properties

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Authors: Yu-Fu Chen, Zih-Jyun Dai, Chen-Te Chiu, Shiue-Chen Chiou, Yung-Wei Chen, Yu-Ming Lin, Kuan-Yu Chen, Hung-Wei Wu, Hsin-Ying Lee, Yan-Kuin Su, Shoou-Jinn Chang

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This paper presents a compact dual-band bandpass filter that involves using the quarter wavelength stepped impedance resonators (SIRs) for achieving simultaneously compact circuit size and good dual-band performance. The filter is designed at 2.4 / 3.5 GHz and constructed by two pairs of quarter wavelength SIRs and source-load lines. By properly tuning the impedance ratio, length ratio and radius of via hole of the SIRs, dual-passbands performance can be easily determined. To improve the passband selectivity, the use of source-load lines is to increase coupling energy between the resonators. The filter is showing simple configuration, effective design method and small circuit size. The measured results are in good agreement with the simulation results.

Keywords: dual-band, bandpass filter, stepped impedance resonators, SIR

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Authors: Arijit Basuray

Abstract:

It is well known that if an electrical insulation system is stressed under high voltage then discharge may occur in various form and if the system is made of composite dielectric having interfaces of materials having different dielectric constant discharge may occur due to gross mismatch of dielectric constant causing intense local field in the interfaces. Here author has studied, firstly, behavior of discharges in gaseous dielectric circuit under AC and DC voltages. A gaseous dielectric circuit is made such that a pair of electrode of typical geometry is used to make the discharges occur under application of AC and DC voltages. Later on, composite insulation system with air gap is also studied. Discharge response of the dielectric circuit is measured across a typically designed impedance. The time evolution of the discharge characteristics showed some interesting chaotic behavior. Author here proposed some analysis of such behavior of the discharge pattern and discussed about the possibility of presence of such discharge circuit in lumped electric circuit.

Keywords: electrical insulation system, EIS, composite dielectric, discharge, chaos

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Authors: Xize Dai, Jian Hao, Claus Leth Bak, Gian Carlo Montanari, Huai Wang

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Printed Circuit Board (PCB) is a critical component applicable to power electronics systems, especially for high-voltage applications involving several high-voltage and high-frequency SiC/GaN devices. The insulation system of PCB is facing more challenges from high-voltage and high-frequency stress that can alter the dielectric properties. Dielectric properties of the PCB insulation system also determine the electrical field distribution that correlates with intrinsic and extrinsic aging mechanisms. Hence, investigating the dielectric properties in the frequency domain of the PCB insulation system is a must. The paper presents the frequency-dependent, temperature-dependent, and voltage-dependent dielectric properties, permittivity, conductivity, and dielectric loss tangents of PCB insulation systems. The dielectric properties mechanisms associated with frequency, temperature, and voltage are revealed from the design perspective. It can be concluded that the dielectric properties of PCB in the frequency domain show a strong dependence on voltage, frequency, and temperature. The voltage-, frequency-, and temperature-dependent dielectric properties are associated with intrinsic conduction behavior and polarization patterns from the perspective of dielectric theory. The results may provide some reference for the PCB insulation system design in high voltage, high frequency, and high-temperature power electronics applications.

Keywords: electrical insulation system, dielectric properties, high voltage and frequency, printed circuit board

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Authors: Nur Suraya Anis Ahmad Bakhtiar, Hazizan Md Akil

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In the present work, the dielectric properties of Epoxy/MWCNTs-muscovite HYBRID and MIXED composites based on ratio 30:70 were studies. The multi-wall carbon nanotubes (MWCNTs) were prepared by two method; (a) muscovite-MWCNTs hybrids were synthesized by chemical vapor deposition (CVD) and (b) physically mixing of muscovite with MWCNTs. The effect of different preparations of the composites and filler loading was evaluated. It is revealed that the dielectric constants of HYBRID epoxy composites are slightly higher compared to MIXED epoxy composites. It is also indicated that the dielectric constant increased by increases the MWCNTs filler loading.

Keywords: muscovite, epoxy, dielectric properties, hybrid composite

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Authors: M. Taouzari, A. Sardi, J. El Aoufi, Ahmed Mouhsen

Abstract:

The purpose of this work is to design a reader antenna fed by 90° hybrid coupler that would ensure a tag which is detected regardless of its orientation for the radio frequency identification system covering the UHF and ISM bands frequencies. Based on this idea, the proposed work is dividing in two parts, first part is about study and design hybrid coupler using the resonators planar called T-and Pi networks operating in commercial bands. In the second part, the proposed antenna fed by the hybrid coupler is designed on FR4 substrate with dielectric permittivity 4.4, thickness dielectric 1.6mm and loss tangent 0.025. The T-slot is inserted in patch of the proposed antenna fed by the hybrid coupler is first designed, optimized and simulated using electromagnetic simulator ADS and then simulated in a full wave simulation software CST Microwave Studio. The simulated antenna by the both softwares achieves the expected performances in terms of matching, pattern radiation, phase shifting, gain and size.

Keywords: dual band antenna, RFID, hybrid coupler, polarization, radiation pattern

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Authors: Shagufta Tabassum, V. P. Pawar

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The study of static dielectric properties in a binary mixture of 1,2 dichloroethane (DE) and n,n dimethylformamide (DMF) polar liquids has been carried out in the frequency range of 10 MHz to 30 GHz for 11 different concentration using time domain reflectometry technique at 10ºC temperature. The dielectric relaxation study of solute-solvent mixture at microwave frequencies gives information regarding the creation of monomers and multimers as well as interaction between the molecules of the binary mixture. The least squares fit method is used to determine the values of dielectric parameters such as static dielectric constant (ε₀), dielectric constant at high frequency (ε_∞) and relaxation time (τ).

Keywords: shagufta shaikhexcess parameters, relaxation time, static dielectric constant, time domain reflectometry

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Authors: Shagufta Tabassum, V. P. Pawar, jr., G. N. Shinde

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The study of dielectric relaxation properties of polar liquids in the binary mixture has been carried out at 10, 15, 20 and 25 ºC temperatures for 11 different concentrations using time domain reflectometry technique. The dielectric properties of a solute-solvent mixture of polar liquids in the frequency range of 10 MHz to 30 GHz gives the information regarding formation of monomers and multimers and also an interaction between the molecules of the liquid mixture under study. The dielectric parameters have been obtained by the least squares fit method using the Debye equation characterized by a single relaxation time without relaxation time distribution.

Keywords: excess properties, relaxation time, static dielectric constant, and time domain reflectometry technique

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Authors: Zaia Derrar Kaddour

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The study of a beam throughout an optical path is generally achieved by means of diffraction integral. Unfortunately, in some problems, this tool turns out to be not very friendly and hard to implement. Instead, the beam expansion method for computing field profiles appears to be an interesting alternative. The beam expansion method consists of expanding the field pattern as a series expansion in a set of orthogonal functions. Propagating each individual component through a circuit and adding up the derived elements leads easily to the result. The problem is then reduced to finding how the expansion coefficients change in a circuit. The beam expansion method requires a systematic study of each type of optical element that can be met in the considered optical path. In this work, we analyze the following fundamental elements: first order optical systems, hard apertures and waveguides. We show that the former element type is completely defined thanks to the Gouy phase shift expression we provide and the latters require a suitable mode conversion. For endorsing the usefulness and relevance of the beam expansion approach, we show here some of its applications such as the treatment of the thermal lens effect and the study of unstable resonators.

Keywords: gouy phase shift, modes, optical resonators, unstable resonators

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Authors: K. Silakaew, P. Thongbai

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There is an increasing need for high–permittivity polymer–matrix composites (PMC) owing to the rapid development of the electronics industry. Unfortunately, the dielectric permittivity of PMC is still too low ( < 80). Moreover, the dielectric loss tangent is usually high (tan > 0.1) when the dielectric permittivity of PMC increased. In this research work, the dielectric properties of poly(vinylidene fluoride) (PVDF)–based nanocomposites can be significantly improved by incorporating by silver–BaTiO3 (Ag–BT) ceramic hybrid nanoparticles. The Ag–BT/PVDF nanocomposites were fabricated using various volume fractions of Ag–BT hybrid nanoparticles (fAg–BT = 0–0.5). The Ag–BT/PVDF nanocomposites were characterized using several techniques. The main phase of Ag and BT can be detected by the XRD technique. The microstructure of the Ag–BT/PVDF nanocomposites was investigated to reveal the dispersion of Ag–BT hybrid nanoparticles because the dispersion state of a filler can have an effect on the dielectric properties of the nanocomposites. It was found that the filler hybrid nanoparticles were well dispersed in the PVDF matrix. The phase formation of PVDF phases was identified using the XRD and FTIR techniques. We found that the fillers can increase the polar phase of a PVDF polymer. The fabricated Ag–BT/PVDF nanocomposites are systematically characterized to explain the dielectric behavior in Ag–BT/PVDF nanocomposites. Interestingly, largely enhanced dielectric permittivity (>240) and suppressed loss tangent (tan<0.08) over a wide frequency range (102 – 105 Hz) are obtained. Notably, the dielectric permittivity is slightly dependent on temperature. The greatly enhanced dielectric permittivity was explained by the interfacial polarization between the Ag and PVDF interface, and due to a high permittivity of BT particles.

Keywords: BaTiO3, PVDF, polymer composite, dielectric properties

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Authors: Bing-Jing Li, Sih-Yin Wang, Tse-Chun Yeh, Yuan-Bin Chen

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Microwave dielectric ceramic materials of (Mg1-xNix)2(Ti0.95Sn0.05)O4 for x = 0.01, 0.03, 0.05, 0.07 and 0.09 were prepared and sintered at 1250–1400ºC. The microstructure and microwave dielectric properties of the ceramic materials were examined and measured. The observations shows that the content of Ni2+ ions has little effect on the crystal structure, dielectric constant, temperature coefficient of resonant frequency (τf) and sintering temperatures of the ceramics. However, the quality values (Q×f) are greatly improved due to the addition of Ni2+ ions. The present study showed that the ceramic material prepared for x = 0.05 and sintered at 1325ºC had the best Q×f value of 392,000 GHz, about 23% improvement compared with that of Mg2(Ti0.95Sn0.05)O4.

Keywords: (Mg1-xNix)2(Ti0.95Sn0.05)O4, microwave dielectric ceramics, high quality factor, high frequency wireless communication

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Authors: Vijay Khopkar, Balaram Sahoo

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Material with high value of dielectric constant has application in the electronics devices. Existing lead based materials have issues such as toxicity and problem with synthesis procedure. Double perovskite structured barium iron niobate (BaFe0.5Nb0.5O3, BFN) is the lead-free material, showing a high value of dielectric constant. Origin of high value of the dielectric constant in BFN is not clear. We studied the dielectric behavior of polycrystalline BFN sample over wide temperature and frequency range. A BFN sample synthesis by conventional solid states reaction method and phase pure dens pellet was used for dielectric study. The SEM and TEM study shows the presence of grain and grain boundary region. The dielectric measurement was done between frequency range of 40 Hz to 5 MHz and temperature between 20 K to 500 K. At 500 K temperature and lower frequency, there observed high value of dielectric constant which decreases with increase in frequency. The dipolar relaxation follows non-Debye type polarization with relaxation straight of 3560 at room temperature (300 K). Activation energy calculated from the dielectric and modulus formalism found to be 17.26 meV and 2.74 meV corresponds to the energy required for the motion of Fe3+ and Nb5+ ions within the oxygen octahedra. Our study shows that BFN is the order disorder type ferroelectric material.

Keywords: barium iron niobate, dielectric, ferroelectric, non-Debye

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Authors: Zainab D. Abd Ali, Thamir H. Khalaf

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In this paper, the characteristics of electric discharge in gap between two (parallel-plate) dielectric plates are studies, the gap filled with Argon gas in atm pressure at ambient temperature, the thickness of gap typically less than 1 mm and dielectric may be up 10 cm in diameter. One of dielectric plates a sinusoidal voltage is applied with Rf frequency, the other plates is electrically grounded. The simulation in this work depending on Boltzmann equation solver in first few moments, fluid model and plasma chemistry, in one dimensional modeling. This modeling have insight into characteristics of Dielectric Barrier Discharge through studying properties of breakdown of gas, electric field, electric potential, and calculating electron density, mean electron energy, electron current density ,ion current density, total plasma current density. The investigation also include: 1. The influence of change in thickness of gap between two plates if we doubled or reduced gap to half. 2. The effect of thickness of dielectric plates. 3. The influence of change in type and properties of dielectric material (gass, silicon, Teflon).

Keywords: computational diagnostics, Boltzmann equation, electric discharge, electron density

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Authors: Sutar Rani Ananda, M. V. Murugendrappa

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To investigate electrical properties of conducting polypyrrole (PPy) and cobalt aluminum oxide (CAO) nanocomposites, impedance analyzer in frequency range of 100 Hz to 5 MHz is used. In this work, PPy/CAO nanocomposites were synthesized by chemical oxidation polymerization method in different weight percent of CAO in PPy. The dielectric properties and AC conductivity studies were carried out for different nanocomposites in temperature range of room temperature to 180 °C. With the increase in frequency, the dielectric constant for all the nanocomposites was observed to decrease. AC conductivity of PPy was improved by addition of CAO nanopowder.

Keywords: polypyrrole, dielectric constant, dielectric loss, AC conductivity

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Authors: Nikhil Jain, Yang Xu, Bin Yu

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Hexagonal boron nitride (h-BN) has been used as a substrate and gate dielectric for graphene field effect transistors (GFETs). Using a graphene/h-BN/TiN (channel/dielectric/gate) stack, key material properties of h-BN were investigated i.e. dielectric strength and tunneling behavior. Work function difference between graphene and TiN results in spontaneous p-doping of graphene through a multi-layer h-BN flake. However, at high levels of current stress, n-doping of graphene is observed, possibly due to the charge transfer across the thin h-BN multi layer. Neither Direct Tunneling (DT) nor Fowler-Nordheim Tunneling (FNT) was observed in TiN/h-BN/Au hetero structures with h-BN showing two distinct volatile conduction states before breakdown. Hexagonal boron nitride emerges as a material of choice for gate dielectrics in GFETs because of robust dielectric properties and high tunneling barrier.

Keywords: graphene, transistors, conduction, hexagonal boron nitride, dielectric strength, tunneling

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Authors: Yih-Chien Chen, Yu-Cheng You

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The microwave dielectric properties of La2MoO6 ceramics were investigated with a view to their application in mobile communication. La2MoO6 ceramics were prepared by the conventional solid-state method with various sintering conditions. The X-ray diffraction peaks of La2MoO6 ceramic did not vary significantly with sintering conditions. The average grain size of La2MoO6 ceramics increased as the temperature and time of sintering increased. A maximum density of 5.67 g/cm3, a dielectric constants (εr) of 14.1, a quality factor (Q×f) of 68,000 GHz, and a temperature coefficient of resonant frequency (τf) of -56 ppm/℃ were obtained when La2MoO6 ceramics that were sintered at 1300 ℃ for 4h.

Keywords: ceramics, sintering, microwave dielectric properties, La2MoO6

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Authors: Onur Potok, Deniz Deger, Kemal Ulutas, Sahin Yakut, Deniz Bozoglu

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Thalium Selenide (TlSe) is used for optoelectronic devices, pressure sensitive detectors, and gamma-ray detectors. The TlSe samples were grown as large single crystals using the Stockbarger-Bridgman method. The thin films, in the form of Al/TlSe/Al, were deposited on the microscope slide in different thicknesses (300-3000 Å) using thermal evaporation technique at 10-5 Torr. The dielectric properties of (TlSe) thin films, capacitance (C) and dielectric loss factor (tanδ), were measured in a frequency range of 10-105 Hz, and temperatures between 213K and 393K via Broadband Dielectric Spectroscopy analyzer. The dielectric constant (ε’) and the dielectric loss (ε’’) of the thin films were derived from measured parameters (C and tanδ). These results showed that the dielectric properties of TlSe thin films are frequency and temperature dependent. The capacitance and the dielectric constant decrease with increasing frequency and decreasing temperature. The dielectric loss of TlSe thin films decreases with increasing frequency, on the other hand, they increase with increasing temperature and increasing thicknesses. There is two relaxation region in the investigated frequency and temperature interval. These regions can be called as low and high-frequency dispersion regions. Low-frequency dispersion region can be attributed to the polarization of the main part of the chain structure of TlSe while high-frequency dispersion region can be attributed to the polarization of side parts of the structure.

Keywords: thin films, thallium selenide, dielectric spectroscopy, binary compounds

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Authors: Ravinder Dachepalli, Naveena Gadwala, K. Vani

Abstract:

Nd and Er substituted bismuth nano crystalline multifunctional materials were prepared by citrate gel autocombution technique. The structural characterization was carried out by XRD and SEM. Electrical properties such are electrical conductivity and dielectric properties have been measured. Plots of electrical conductivity versus temperature increases with increasing temperature and shown a transition near Curie temperature. Dielectric properties such are dielectric constant and dielectric loss tangent have been measured from 20Hz to 2 MHz at room temperature. Plots of dielectric constant versus frequency show a normal dielectric behaviour of multifunctional materials. Temperature dependence of magnetic properties of Bi-Nd and Bi-Er multi-functional materials were carried out by using Vibrating sample magnetometer (VSM). The magnetization as a function of an applied field ±100 Oe was carried out at 3K and 360 K. Zero field Cooled (ZFC) and Field Cooled (FC) magnetization measurements under an applied field of 100Oe a in the temperature range of 5-375K. The observed results can be explained for spintronic devices.

Keywords: Bi-Nd and Bi-Er Multifunctional Materia, Citrate Gel Auto combustion Technique, FC-ZFC magnetization, Dielectric constant

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