Search results for: dielectric analysis
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 27012

Search results for: dielectric analysis

26982 Investigation of the Dielectric Response of Ppy/V₂c Mxene-Zns from First Principle Calculation

Authors: Anthony Chidi Ezika, Gbolahan Joseph Adekoya, Emmanuel Rotimi Sadiku, Yskandar Hamam, Suprakas Sinha Ray

Abstract:

High-energy-density polymer/ceramic composites require a high breakdown strength and dielectric constant. Interface polarization and electric percolation are responsible for the high dielectric constant. In order to create composite dielectrics, high conductivity ceramic particles are combined with polymers to increase the dielectric constant. In this study, bonding and the non-uniform distribution of charges in the ceramic/ceramic interface zone are investigated using density functional theory (DFT) modeling. This non-uniform distribution of charges is intended to improve the ceramic/ceramic interface's dipole polarization (dielectric response). The interfacial chemical bond formation can also improve the structural stability of the hybrid filler and, consequently, of the composite films. To comprehend the electron-transfer process, the density of state and electron localization function of the PPy with hybrid fillers are also studied. The polymer nanocomposite is anticipated to provide a suitable dielectric response for energy storage applications.

Keywords: energy storage, V₂C/ ZnS hybrid, polypyrrole, MXene, nanocomposite, dielectric

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26981 Growth and Characterization of Bis-Thiourea Nickel Barium Chloride Single Crystals

Authors: Rakesh Hajiyani, Chetan Chauhan, Harshkant Jethva, Mihir Joshi

Abstract:

Metal bis-thiourea type organo-metallic crystals are popular as non-linear optical materials. Bis-thiourea nickel barium chloride was synthesized and crystals were grown by slow aqueous solvent evaporation technique. The transparent and colorless crystals having maximum dimensions of 13 mm x 8 mm x 2.2 mm were obtained. The EDAX was carried out to estimate the content of nickel and barium in the grown crystals. The powder XRD analysis suggested orthorhombic crystal structure with unit cell parameters as: a= 9.70 Å, b= 10.68 Å and c= 17.95 Å. The FTIR spectroscopy study confirmed the presence of various functional groups. The UV-vis spectroscopy study indicated that the crystals were transparent in the visible region with 90% transmittance level further optical parameters were studied. From the TGA it was found that the crystals remained stable up to 170 0C and then decomposed through two decomposition stages. The dielectric study was carried out in the frequency range of applied field from 500 Hz to 1 MHz. The variations of dielectric constant, dielectric loss were studied with frequency. It was found that the dielectric constant and the dielectric loss decreased as the frequency of applied field increased. The results are discussed.

Keywords: crystal growth, dielectric study, optical parameters, organo-metallic crystals, powder xrd, slow evaporation technique, TGA

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26980 Theory of Gyrotron Amplifier in a Vane-Loaded Waveguide with Inner Dielectric Material

Authors: Reyhaneh Hashemi, Shahrooz Saviz

Abstract:

In his study, we have survey the theory of gyrotron amplifier in a vane-loaded waveguide with inner dielectric material. Dispersion relation for electromagnetic waves emitted by a cylindrical waveguide that provided with wedge-shaped metal vanes projecting radially inward from the wall of the guide and exited in the transverse-electric mode was analysed. From numerical analysis of this dispersion relation, it is shown that the stability behavior of the fast-wave mode is dependent of the dielectric constant. With a small axial momentum spreed, a super bandwidth is shown to be attainable by a mixed mode operation. Also, with the utilization from the numeric analysis of relation dispersion. We show that in the –speed mode, the constant is independent de-electric. With the ratio of dispersion of smell, high –bandwith was obtained for the combined mode. And at the end, we were comparing the result of our work (vane-loaded) by the waveguide with a smooth wall.

Keywords: gyrotron amplifier, waveguide, vane-loaded waveguide, dielectric material, dispersion relation, cylindrical waveguide, fast-wave mode, mixed mode operation

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26979 Dielectric Properties of PANI/h-BN Composites

Authors: Seyfullah Madakbas, Emrah Cakmakci

Abstract:

Polyaniline (PANI), the most studied member of the conductive polymers, has a wide range of uses from several electronic devices to various conductive high-technology applications. Boron nitride (BN) is a boron and nitrogen containing compound with superior chemical and thermal resistance and thermal conductivity. Even though several composites of PANI was prepared in literature, the preparation of h-BN/PANI composites is rare. In this work PANI was polymerized in the presence of different amounts of h-BN (1, 3 and 5% with respect to PANI) by using 0.1 M solution of NH4S2O8 in HCl as the oxidizing agent and conductive composites were prepared. Composites were structurally characterized with FTIR spectroscopy and X-Ray Diffraction (XRD). Thermal properties of conductive composites were determined by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). Dielectric measurements were performed in the frequency range of 106–108 Hz at room temperature. The corresponding bands for the benzenoid and quinoid rings at around 1593 and 1496 cm-1 in the FTIR spectra of the composites proved the formation of polyaniline. Together with the FTIR spectra, XRD analysis also revealed the existence of the interactions between PANI and h-BN. Glass transition temperatures (Tg) of the composites increased with the increasing amount of PANI (from 87 to 101). TGA revealed that the char yield of the composites increased as the amount of h-BN was increased in the composites. Finally the dielectric permittivity of 3 wt.%h-BN-containing composite was measured and found as approximately 17. This work was supported by Marmara University, Commission of Scientific Research Project.

Keywords: dielectric permittivity, h-BN, PANI, thermal analysis

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26978 Optical and Dielectric Properties of Self-Assembled 0D Hybrid Organic-Inorganic Insulator

Authors: S. Kassou, R. El Mrabet, A. Belaaraj, P. Guionneau, N. Hadi, T. Lamcharfi

Abstract:

The organic–inorganic hybrid perovskite-like [C6H5C2H4NH3]2ZnCl4 (PEA-ZnCl4) was synthesized by saturated solutions method. X-ray powder diffraction, Raman spectroscopy, UV-visible transmittance, and capacitance meter measurements have been used to characterize the structure, the functional groups, the optical parameters, and the dielectric constants of the material. The material has a layered structure. The optical transmittance (T %) was recorded and applied to deduce the absorption coefficient (α) and optical band gap (Eg). The hybrid shows an insulator character with a direct band gap about 4.46 eV, and presents high dielectric constants up to a frequency of about 105 Hz, which suggests a ferroelectric behavior. The reported optical and dielectric properties can help to understand the fundamental properties of perovskite materials and also to be used for optimizing or designing new devices.

Keywords: dielectric constants, optical band gap (eg), optical parameters, Raman spectroscopy, self-assembly organic inorganic hybrid

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26977 Influence of Annealing Temperature on Optical, Anticandidal, Photocatalytic and Dielectric Properties of ZnO/TiO2 Nanocomposites

Authors: Wasi Khan, Suboohi Shervani, Swaleha Naseem, Mohd. Shoeb, J. A. Khan, B. R. Singh, A. H. Naqvi

Abstract:

We have successfully synthesized ZnO/TiO2 nanocomposite using a two-step solochemical synthesis method. The influence of annealing temperature on microstructural, optical, anticandidal, photocatalytic activities and dielectric properties were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show the formation of nanocomposite and uniform surface morphology of all samples. The UV-Vis spectra indicate decrease in band gap energy with increase in annealing temperature. The anticandidal activity of ZnO/TiO2 nanocomposite was evaluated against MDR C. albicans 077. The in-vitro killing assay revealed that the ZnO/TiO2 nanocomposite efficiently inhibit the growth of the C. albicans 077. The nanocomposite also exhibited the photocatalytic activity for the degradation of methyl orange as a function of time at 465 nm wavelength. The electrical behaviour of composite has been studied over a wide range of frequencies at room temperature using complex impedance spectroscopy. The dielectric constants, dielectric loss and ac conductivity (σac) were studied as the function of frequency, which have been explained by ‘Maxwell Wagner Model’. The data reveals that the dielectric constant and loss (tanδ) exhibit the normal dielectric behavior and decreases with the increase in frequency.

Keywords: ZnO/TiO2 nanocomposites, SEM, photocatalytic activity, dielectric properties

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26976 Temperature Dependence of Relative Permittivity: A Measurement Technique Using Split Ring Resonators

Authors: Sreedevi P. Chakyar, Jolly Andrews, V. P. Joseph

Abstract:

A compact method for measuring the relative permittivity of a dielectric material at different temperatures using a single circular Split Ring Resonator (SRR) metamaterial unit working as a test probe is presented in this paper. The dielectric constant of a material is dependent upon its temperature and the LC resonance of the SRR depends on its dielectric environment. Hence, the temperature of the dielectric material in contact with the resonator influences its resonant frequency. A single SRR placed between transmitting and receiving probes connected to a Vector Network Analyser (VNA) is used as a test probe. The dependence of temperature between 30 oC and 60 oC on resonant frequency of SRR is analysed. Relative permittivities ‘ε’ of test samples for different temperatures are extracted from a calibration graph drawn between the relative permittivity of samples of known dielectric constant and their corresponding resonant frequencies. This method is found to be an easy and efficient technique for analysing the temperature dependent permittivity of different materials.

Keywords: metamaterials, negative permeability, permittivity measurement techniques, split ring resonators, temperature dependent dielectric constant

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26975 Microwave Dielectric Relaxation Study of Diethanolamine with Triethanolamine from 10 MHz-20 GHz

Authors: A. V. Patil

Abstract:

The microwave dielectric relaxation study of diethanolamine with triethanolamine binary mixture have been determined over the frequency range of 10 MHz to 20 GHz, at various temperatures using time domain reflectometry (TDR) method for 11 concentrations of the system. The present work reveals molecular interaction between same multi-functional groups [−OH and –NH2] of the alkanolamines (diethanolamine and triethanolamine) using different models such as Debye model, Excess model, and Kirkwood model. The dielectric parameters viz. static dielectric constant (ε0) and relaxation time (τ) have been obtained with Debye equation characterized by a single relaxation time without relaxation time distribution by the least squares fit method.

Keywords: diethanolamine, excess properties, kirkwood properties, time domain reflectometry, triethanolamine

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26974 Synthesis, Spectral, Thermal, Optical and Dielectric Studies of Some Organic Arylidene Derivatives

Authors: S. Sathiyamoorthi, P. Srinivasan, K. Suganya Devi

Abstract:

Arylidene derivatives are the subclass of chalcone derivatives. Chalcone derivatives are studied widely for the past decade because of its nonlinearity. To seek new organic group of crystals which suit for fabrication of optical devices, three-member organic arylidene crystals were synthesized by using Claisen–Schmidt condensation reaction. Good quality crystals were grown by slow evaporation method. Functional groups were identified by FT-IR and FT-Raman spectrum. Optical transparency and optical band gap were determined by UV-Vis-IR studies. Thermal stability and melting point were calculated using TGA and DSC. Variation of dielectric loss and dielectric constant with frequency were calculated by dielectric measurement.

Keywords: DSC and TGA studies, nonlinear optic studies, Fourier Transform Infrared Spectroscopy, UV-vis-NIR spectra

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26973 Comparative Study of Al₂O₃ and HfO₂ as Gate Dielectric on AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors

Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

Abstract:

We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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26972 Generation and Diagnostics of Atmospheric Pressure Dielectric Barrier Discharge in Argon/Air

Authors: R. Shrestha, D. P. Subedi, R. B. Tyata, C. S. Wong,

Abstract:

In this paper, a technique for the determination of electron temperatures and electron densities in atmospheric pressure Argon/air discharge by the analysis of optical emission spectra (OES) is reported. The discharge was produced using a high voltage (0-20) kV power supply operating at a frequency of 27 kHz in parallel electrode system, with glass as dielectric. The dielectric layers covering the electrodes act as current limiters and prevent the transition to an arc discharge. Optical emission spectra in the range of (300nm-850nm) were recorded for the discharge with different inter electrode gap keeping electric field constant. Electron temperature (Te) and electron density (ne) are estimated from electrical and optical methods. Electron density was calculated using power balance method. The optical methods are related with line intensity ratio from the relative intensities of Ar-I and Ar-II lines in Argon plasma. The electron density calculated by using line intensity ratio method was compared with the electron density calculated by stark broadening method. The effect of dielectric thickness on plasma parameters (Te and ne) have also been studied and found that Te and ne increases as thickness of dielectric decrease for same inter electrode distance and applied voltage.

Keywords: electron density, electron temperature, optical emission spectra,

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26971 Theoretical Analysis of the Solid State and Optical Characteristics of Calcium Sulpide Thin Film

Authors: Emmanuel Ifeanyi Ugwu

Abstract:

Calcium Sulphide which is one of Chalcogenide group of thin films has been analyzed in this work using a theoretical approach in which a scalar wave was propagated through the material thin film medium deposited on a glass substrate with the assumption that the dielectric medium has homogenous reference dielectric constant term, and a perturbed dielectric function, representing the deposited thin film medium on the surface of the glass substrate as represented in this work. These were substituted into a defined scalar wave equation that was solved first of all by transforming it into Volterra equation of second type and solved using the method of separation of variable on scalar wave and subsequently, Green’s function technique was introduced to obtain a model equation of wave propagating through the thin film that was invariably used in computing the propagated field, for different input wavelengths representing UV, Visible and Near-infrared regions of field considering the influence of the dielectric constants of the thin film on the propagating field. The results obtained were used in turn to compute the band gaps, solid state and optical properties of the thin film.

Keywords: scalar wave, dielectric constant, calcium sulphide, solid state, optical properties

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26970 Research on High Dielectric HfO₂ Stack Structure Applied to Field Effect Transistors

Authors: Kuan Yu Lin, Shih Chih Chen

Abstract:

This study focuses on the Al/HfO₂/Si/Al structure to explore the electrical properties of the structure. This experiment uses a radio frequency magnetron sputtering system to deposit high dielectric materials on p-type silicon substrates of 1~10 Ω-cm (100). Consider the hafnium dioxide film as a dielectric layer. Post-deposition annealing at 750°C in nitrogen atmosphere. Electron beam evaporation of metallic aluminum is then used to complete the top/bottom electrodes. The metal is post-annealed at 450°C for 20 minutes in a nitrogen environment to complete the MOS component. Its dielectric constant, equivalent oxide layer thickness, oxide layer defects, and leakage current mechanism are discussed. At PDA 750°C-5s, the maximum k value was found to be 21.2, and the EOT was 3.68nm.

Keywords: high-k gate dielectrics, HfO₂, post deposition annealing, RF magnetic

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26969 Characterization of CuO Incorporated CMOS Dielectric for Fast Switching System

Authors: Nissar Mohammad Karim, Norhayati Soin

Abstract:

To ensure fast switching in high-K incorporated Complementary Metal Oxide Semiconductor (CMOS) transistors, the results on the basis of d (NBTI) by incorporating SiO2 dielectric with aged samples of CuO sol-gels have been reported. Precursor ageing has been carried out for 4 days. The minimum obtained refractive index is 1.0099 which was found after 3 hours of adhesive UV curing. Obtaining a low refractive index exhibits a low dielectric constant and hence a faster system.

Keywords: refractive index, Sol-Gel, precursor aging, aging

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26968 Polyvinylidene Fluoride-Polyaniline Films for Improved Dielectric Properties

Authors: Anjana Jain, S. Jayanth Kumar

Abstract:

Polyvinylidene fluoride (PVDF) is a well-known material for remarkable mechanical properties, resistance to chemicals and superior ferroelectric performances. This endows PVDF the potential for application in supercapacitor devices. The dielectric properties of PVDF, however, are not very high. To improve the dielectric properties of Polyvinylidene fluoride (PVDF), Piezoelectric polymer nanocomposites are prepared without affecting the other useful properties of PVDF. Polyaniline (PANI) was chosen as a filler material to prepare the nanocomposites. PVDF-PANI nanocomposite films were prepared using solvent cast method with different volume fractions of PANI varying from 0.04% to 0.048% of PANI content. The films are characterized for structural, mechanical, and surface morphological properties using X-ray diffraction, differential scanning calorimeter, Raman spectra, Infrared spectra, tensile testing, and scanning electron microscopy. The X-ray diffraction analysis shows that, prepared films were in β-phase. The DSC scans indicated that the degree of crystallinity in PVDF-PANI is improved. Raman and Infrared spectrum further confirm the presence of β-phase of PVDF-PANI film. Tensile properties of PVDF-PANI films were in good agreement with those reported in literature. The surface feature shows that PANI is uniformly distributed in PVDF and also results in disappearance of spherulites. The influence of volume fraction of PANI in PVDF on dielectric properties was analyzed. The results showed that the dielectric permittivity of PVDF-PANI (120) was much higher than that of PVDF (12). The sensitivity of these films was studied on application of a pressure and a constant output voltage was obtained.

Keywords: dielectric Properties, PANI, PVDF, smart materials

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26967 Characterizing of CuO Incorporated CMOS Dielectric for Fast Switching System

Authors: Nissar Mohammad Karim, Norhayati Soin

Abstract:

To ensure fast switching in high-K incorporated Complementary Metal Oxide Semiconductor (CMOS) transistors, the results on the basis of d (NBTI) by incorporating SiO2 dielectric with aged samples of CuO sol-gels have been reported. Precursor ageing has been carried out for 4 days. The minimum obtained refractive index is 1.0099 which was found after 3 hours of adhesive UV curing. Obtaining a low refractive index exhibits a low dielectric constant and hence a faster system.

Keywords: refractive index, sol-gel, precursor ageing, metallurgical and materials engineering

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26966 Raman and Dielectric Relaxation Investigations of Polyester-CoFe₂O₄ Nanocomposites

Authors: Alhulw H. Alshammari, Ahmed Iraqi, S. A. Saad, T. A. Taha

Abstract:

In this work, we present for the first time the study of Raman spectra and dielectric relaxation of polyester polymer-CoFe₂O₄ (5.0, 10.0, 15.0, and 20.0 wt%) nanocomposites. Raman spectroscopy was applied as a sensitive structural identification technique to characterize the polyester-CoFe₂O₄ nanocomposites. The images of AFM confirmed the uniform distribution of CoFe₂O₄ inside the polymer matrix. Dielectric relaxation was employed as an important analytical technique to obtain information about the ability of the polymer nanocomposites to store and filter electrical signals. The dielectric relaxation analyses were carried out on the polyester-CoFe₂O₄ nanocomposites at different temperatures. An increase in dielectric constant ε₁ was observed for all samples with increasing temperatures due to the alignment of the electric dipoles with the applied electric field. In contrast, ε₁ decreased with increasing frequency. This is attributed to the difficulty for the electric dipoles to follow the electric field. The α relaxation peak that appeared at a high frequency shifted to higher frequencies when increasing the temperature. The activation energies for Maxwell-Wagner Sillar (MWS) changed from 0.84 to 1.01 eV, while the activation energies for α relaxations were 0.54 – 0.94 eV. The conduction mechanism for the polyester- CoFe₂O₄ nanocomposites followed the correlated barrier hopping (CBH) model.

Keywords: AC conductivity, activation energy, dielectric permittivity, polyester nanocomposites

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26965 Dynamics Characterizations of Dielectric Electro- Active Polymer Pull Actuator for Vibration Control


Authors: Abdul Malek Abdul Wahab, Emiliano Rustighi

Abstract:

The elastomeric dielectric material has become a new alternative for actuator technology recently. The characteristic of dielectric elastomer that induces significant strain by applying voltage attracts the attention of many researchers to study this material in actuator technology. Thus, for a couple of years, Danfoss Ventures A/S has established their dielectric electro-active polymer (DEAP), which called Polypower. The main objective of this work was to investigate the characterization of PolyPower folded actuator as a ‘pull’ actuator for vibration control. A range of experiment was carried out on folded actuator including passive (without electrical stimulate) and active (with electrical stimulate) testing. For both categories static and dynamic testing have been done to determine the behavior of folded DEAP actuator. Voltage-Strain experiment determines that DEAP folded actuator is the non-linear system. The voltage supplied has no effect on the natural frequency which shows by ongoing dynamic testing. Finally, varies AC voltage with different amplitude and frequency has been provided to DEAP folded actuator. This experiment shows the parameter that influences the performance of DEAP folded actuator. As a result, the actuator performance dominated by the frequency dependence of the elastic response and was less influenced by dielectric properties.

Keywords: elastomeric dielectric, dielectric electro-active polymer, folded actuator, voltage-strain

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26964 Thermal and Dielectric Breakdown Criterium for Low Voltage Switching Devices

Authors: Thomas Merciris, Mathieu Masquere, Yann Cressault, Pascale Petit

Abstract:

The goal of an alternative current (AC) switching device is to allow the arc (created during the opening phase of the contacts) to extinguish at the current zero. The plasma temperature rate of cooling down, the electrical characteristic of the arc (current-voltage), and the rise rate of the transient recovery voltage (TRV) are critical parameters which influence the performance of a switching device. To simulate the thermal extinction of the arc and to obtain qualitative data on the processes responsible for this phenomenon, a 1D MHD fluid model in the air was developed and coupled to an external electric circuit. After thermal extinction, the dielectric strength of the hot air (< 4kK) was then estimated by the Bolsig+ software and the critical electric fields method with the temperature obtained by the MHD simulation. The influence of copper Cu and silver Ag vapors was investigated on the thermal and dielectric part of the simulation with various current forms (100A to 1kA). Finally, those values of dielectric strength have been compared to the experimental values obtained in the case of two separating silver contacts. The preliminary results seem to indicate the dielectric strength after multiples hundreds of microseconds is the same order of magnitude as experimentally found.

Keywords: MHD simulation, dielectric recovery, Bolsig+, silver vapors, copper vapors, breakers, electric arc

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26963 Review of Dielectric Permittivity Measurement Techniques

Authors: Ahmad H. Abdelgwad, Galal E. Nadim, Tarek M. Said, Amr M. Gody

Abstract:

The prime objective of this manuscript is to provide intensive review of the techniques used for permittivity measurements. The measurement techniques, relevant for any desired application, rely on the nature of the measured dielectric material, both electrically and physically, the degree of accuracy required, and the frequency of interest. Regardless of the way that distinctive sorts of instruments can be utilized, measuring devices that provide reliable determinations of the required electrical properties including the obscure material in the frequency range of interest can be considered. The challenge in making precise dielectric property or permittivity measurements is in designing of the material specimen holder for those measurements (RF and MW frequency ranges) and adequately modeling the circuit for reliable computation of the permittivity from the electrical measurements. If the RF circuit parameters such as the impedance or admittance are estimated appropriately at a certain frequency, the material’s permittivity at this frequency can be estimated by the equations which relate the way in which the dielectric properties of the material affect on the parameters of the circuit.

Keywords: dielectric permittivity, free space measurement, waveguide techniques, coaxial probe, cavity resonator

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26962 A Comparative Study of Substituted Li Ferrites Sintered by the Conventional and Microwave Sintering Technique

Authors: Ibetombi Soibam

Abstract:

Li-Zn-Ni ferrite having the compositional formula Li0.4-0.5xZn0.2NixFe2.4-0.5xO4 where x = 0.02 ≤ x ≤0.1 in steps of 0.02 was fabricated by the citrate precursor method. In this method, metal nitrates and citric acid was used to prepare the gel which exhibit self-propagating combustion behavior giving the required ferrite sample. The ferrite sample was given a pre-firing at 650°C in a programmable conventional furnace for 3 hours with a heating rate of 5°C/min. A series of the sample was finally given conventional sintering (CS) at 1040°C after the pre-firing process. Another series was given microwave sintering (MS) at 1040°C in a programmable microwave furnace which uses a single magnetron operating at 2.45 GHz frequency. X- ray diffraction pattern confirmed the spinel phase structure for both the series. The theoretical and experimental density was calculated. It was observed that densification increases with the increase in Ni concentration in both the series. However, samples sintered by microwave technique was found to be denser. The microstructure of the two series of the sample was examined using scanning electron microscopy (SEM). Dielectric properties have been investigated as a function of frequency and composition for both series of samples sintered by CS and MS technique. The variation of dielectric constant with frequency show dispersion for both the series. It was explained in terms of Koop’s two layer model. From the analysis of dielectric measurement, it was observed that the value of room temperature dielectric constant decreases with the increase in Ni concentration for both the series. The microwave sintered samples show a lower dielectric constant making microwave sintering suitable for high-frequency applications. The possible mechanisms contributing to all the above behavior is being discussed.

Keywords: citrate precursor, dielectric constant, ferrites, microwave sintering

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26961 Heteromolecular Structure Formation in Aqueous Solutions of Ethanol, Tetrahydrofuran and Dimethylformamide

Authors: Sh. Gofurov, O. Ismailova, U. Makhmanov, A. Kokhkharov

Abstract:

The refractometric method has been used to determine optical properties of concentration features of aqueous solutions of ethanol, tetrahydrofuran and dimethylformamide at the room temperature. Changes in dielectric permittivity of aqueous solutions of ethanol, tetrahydrofuran and dimethylformamide in a wide range of concentrations (0÷1.0 molar fraction) have been studied using molecular dynamics method. The curves depending on the concentration of experimental data on excess refractive indices and excess dielectric permittivity were compared. It has been shown that stable heteromolecular complexes in binary solutions are formed in the concentration range of 0.3÷0.4 mole fractions. The real and complex part of dielectric permittivity was obtained from dipole-dipole autocorrelation functions of molecules. At the concentrations of C = 0.3 / 0.4 m.f. the heteromolecular structures with hydrogen bonds are formed. This is confirmed by the extremum values of excessive dielectric permittivity and excessive refractive index of aqueous solutions.

Keywords: refractometric method, aqueous solution, molecular dynamics, dielectric constant

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26960 Thickness-Tunable Optical, Magnetic, and Dielectric Response of Lithium Ferrite Thin Film Synthesized by Pulsed Laser Deposition

Authors: Prajna Paramita Mohapatra, Pamu Dobbidi

Abstract:

Lithium ferrite (LiFe5O8) has potential applications as a component of microwave magnetic devices such as circulators and monolithic integrated circuits. For efficient device applications, spinel ferrites in the form of thin films are highly required. It is necessary to improve their magnetic and dielectric behavior by optimizing the processing parameters during deposition. The lithium ferrite thin films are deposited on Pt/Si substrate using the pulsed laser deposition technique (PLD). As controlling the film thickness is the easiest parameter to tailor the strain, we deposited the thin films having different film thicknesses (160 nm, 200 nm, 240 nm) at oxygen partial pressure of 0.001 mbar. The formation of single phase with spinel structure (space group - P4132) is confirmed by the XRD pattern and the Rietveld analysis. The optical bandgap is decreased with the increase in thickness. FESEM confirmed the formation of uniform grains having well separated grain boundaries. Further, the film growth and the roughness are analyzed by AFM. The root-mean-square (RMS) surface roughness is decreased from 13.52 nm (160 nm) to 9.34 nm (240 nm). The room temperature magnetization is measured with a maximum field of 10 kOe. The saturation magnetization is enhanced monotonically with an increase in thickness. The magnetic resonance linewidth is obtained in the range of 450 – 780 Oe. The dielectric response is measured in the frequency range of 104 – 106 Hz and in the temperature range of 303 – 473 K. With an increase in frequency, the dielectric constant and the loss tangent of all the samples decreased continuously, which is a typical behavior of conventional dielectric material. The real part of the dielectric constant and the dielectric loss is increased with an increase in thickness. The contribution of grain and grain boundaries is also analyzed by employing the equivalent circuit model. The highest dielectric constant is obtained for the film having a thickness of 240 nm at 104 Hz. The obtained results demonstrate that desired response can be obtained by tailoring the film thickness for the microwave magnetic devices.

Keywords: PLD, optical response, thin films, magnetic response, dielectric response

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26959 Overview of the Various Factors Affecting the Properties of Microwave and Millimeterwave Dielectric Ceramics

Authors: Abdul Manan

Abstract:

Dielectric Resonators (DRs) have revolutionized the microwave wireless communication industry globally. There are three directions for research in ceramics for application in telecommunication industry Three key properties of ceramic dielectrics that determine their functionality at microwave and millimetrewave frequencies include relative permittivity (εr), unloaded quality factor Qu- the inverse of the dielectric loss (tanδ) and temperature coefficient of resonant frequency (τf). Each direction requires specific properties. These dielectric properties are affected by a number of factors. These includes tolerance factor, onset of structural phase transitions, dark core formation, processing conditions, raw materials and impurities, order/disorder behavior, compositional ordering, porosity, humidity, grain size, orientation of the crystallites, and grain boundaries. The data related to these factors is scattered. The main purpose of this review is to bring these together and present the effects of these factors on the microwave dielectric properties. Control of these factors is important for improvement in the microwave properties. This review would be very helpful to the novice researchers and technologists in the field.

Keywords: order disorder, sintering, defect, porosity, grain boundaries

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26958 Graphene Transistor Employing Multilayer Hexagonal Boron Nitride as Substrate and Gate Insulator

Authors: Nikhil Jain, Bin Yu

Abstract:

We explore the potential of using ultra-thin hexagonal boron nitride (h-BN) as both supporting substrate and gate dielectric for graphene-channel field effect transistors (GFETs). Different from commonly used oxide-based dielectric materials which are typically amorphous, very rough in surface, and rich with surface traps, h-BN is layered insulator free of dangling bonds and surface states, featuring atomically smooth surface. In a graphene-channel-last device structure with local buried metal gate electrode (TiN), thin h-BN multilayer is employed as both supporting “substrate” and gate dielectric for graphene active channel. We observed superior carrier mobility and electrical conduction, significantly improved from that in GFETs with SiO2 as substrate/gate insulator. In addition, we report excellent dielectric behavior of layered h-BN, including ultra-low leakage current and high critical electric field for breakdown.

Keywords: graphene, field-effect transistors, hexagonal boron nitride, dielectric strength, tunneling

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26957 A New Co(II) Metal Complex Template with 4-dimethylaminopyridine Organic Cation: Structural, Hirshfeld Surface, Phase Transition, Electrical Study and Dielectric Behavior

Authors: Mohamed dammak

Abstract:

Great attention has been paid to the design and synthesis of novel organic-inorganic compounds in recent decades because of their structural variety and the large diversity of atomic arrangements. In this work, the structure for the novel dimethyl aminopyridine tetrachlorocobaltate (C₇H₁₁N₂)₂CoCl₄ prepared by the slow evaporation method at room temperature has been successfully discussed. The X-ray diffraction results indicate that the hybrid material has a triclinic structure with a P space group and features a 0D structure containing isolated distorted [CoCl₄]2- tetrahedra interposed between [C7H11N²⁻]+ cations forming planes perpendicular to the c axis at z = 0 and z = ½. The effect of the synthesis conditions and the reactants used, the interactions between the cationic planes, and the isolated [CoCl4]2- tetrahedra are employing N-H...Cl and C-H…Cl hydrogen bonding contacts. The inspection of the Hirshfeld surface analysis helps to discuss the strength of hydrogen bonds and to quantify the inter-contacts. A phase transition was discovered by thermal analysis at 390 K, and comprehensive dielectric research was reported, showing a good agreement with thermal data. Impedance spectroscopy measurements were used to study the electrical and dielectric characteristics over a wide range of frequencies and temperatures, 40 Hz–10 MHz and 313–483 K, respectively. The Nyquist plot (Z" versus Z') from the complex impedance spectrum revealed semicircular arcs described by a Cole-Cole model. An electrical circuit consisting of a link of grain and grain boundary elements is employed. The real and imaginary parts of dielectric permittivity, as well as tg(δ) of (C₇H₁₁N₂)₂CoCl₄ at different frequencies, reveal a distribution of relaxation times. The presence of grain and grain boundaries is confirmed by the modulus investigations. Electric and dielectric analyses highlight the good protonic conduction of this material.

Keywords: organic-inorganic, phase transitions, complex impedance, protonic conduction, dielectric analysis

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26956 A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal

Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa2Ca2Cu3O10 as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF2 as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF2)NInSb(Si/MgF2)N named S.I, and (Si/MgF2)NHgBa2Ca2Cu3O10(Si/MgF2)N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: defect modes, photonic crystals, semiconductor, superconductor, transmission

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26955 In vivo Spectroscopic Study on the Effects of Ionising and Non-Ionising Radiation on Some Biophysical Properties of Rat Blood

Authors: S. H. Allehyani, H. S. Ibrahim, F. M. Ali, E. Sayd, T. Abou Aiad

Abstract:

The present study aimed to analyse the radiation risk associated with the exposure of haemoglobin (Hb) of rat red blood cells (rbcs) exposed to a 50-Hz 6-kV/m electric field, a fast neutron dose of 1 mSv, and mixed radiation from fast neutrons and an electric field distributed over a period of three weeks at a rate of 5 days/week and 8 hours/day. The dielectric measurements and the absorption spectra for the haemoglobin molecule in the frequency range of 1 kHz to 5 MHz were measured for all of the samples. The dielectric relaxation results demonstrated an increase in the dielectric increment (∆ε) for the rbcs from all of the irradiated animals, which indicates an increase in the electric dipole. Moreover, the results revealed a decrease in the relaxation time (τ) and the molecular radius (r) of the irradiated molecules, which indicates that the increase in ∆ε is mainly due to a pronounced increase in the centre of mass of the charge on the electric dipole of the Hb molecule. The results from the absorption spectra indicate that the ratio of met-haemoglobin to oxy-haemoglobin is altered by irradiation. Moreover, the results from the delayed effect studies show that the structure and function of the newly generated Hb molecules are altered and dissimilar to that of healthy Hb.

Keywords: rat red blood cell haemoglobin, dielectric properties, absorption spectra, biochemical analysis

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26954 Dynamics Characterizations of Dielectric Electro- Active Polymer Pull Actuator for Vibration Control

Authors: A. M. Wahab, E. Rustighi

Abstract:

Elastomeric dielectric material has recently become a new alternative for actuator technology. The characteristics of dielectric elastomers placed between two electrodes to withstand large strain when electrodes are charged has attracted the attention of many researcher to study this material for actuator technology. Thus, in the past few years Danfoss Ventures A/S has established their own dielectric electro-active polymer (DEAP), which was called PolyPower. The main objective of this work was to investigate the dynamic characteristics for vibration control of a PolyPower actuator folded in ‘pull’ configuration. A range of experiments was carried out on the folded actuator including passive (without electrical load) and active (with electrical load) testing. For both categories static and dynamic testing have been done to determine the behavior of folded DEAP actuator. Voltage-Strain experiments show that the DEAP folded actuator is a non-linear system. It is also shown that the voltage supplied has no effect on the natural frequency. Finally, varying AC voltage with different amplitude and frequency shows the parameters that influence the performance of DEAP folded actuator. As a result, the actuator performance dominated by the frequency dependence of the elastic response and was less influenced by dielectric properties.

Keywords: dielectric electro-active polymer, pull actuator, static, dynamic, electromechanical

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26953 Microwave Dielectric Properties and Microstructures of Nd(Ti₀.₅W₀.₅)O₄ Ceramics for Application in Wireless Gas Sensors

Authors: Yih-Chien Chen, Yue-Xuan Du, Min-Zhe Weng

Abstract:

Carbon monoxide is a substance produced by the incomplete combustion. It is toxic even at concentrations of less than 100ppm. Since it is colorless and odorless, it is difficult to detect. CO sensors have been developed using a variety of physical mechanisms, including semiconductor oxides, solid electrolytes, and organic semiconductors. Many works have focused on using semiconducting sensors composed of sensitive layers such as ZnO, TiO₂, and NiO with high sensitivity for gases. However, these sensors working at high temperatures increased their power consumption. On the other hand, the dielectric resonator (DR) is attractive for gas detection due to its large surface area and sensitivity for external environments. Materials that are to be employed in sensing devices must have a high-quality factor. Numerous researches into the fergusonite-type structure and related ceramic systems have explored. Extensive research into RENbO₄ ceramics has explored their potential application in resonators, filters, and antennas in modern communication systems, which are operated at microwave frequencies. Nd(Ti₀.₅W₀.₅)O₄ ceramics were synthesized herein using the conventional mixed-oxide method. The Nd(Ti₀.₅W₀.₅)O₄ ceramics were prepared using the conventional solid-state method. Dielectric constants (εᵣ) of 15.4-19.4 and quality factor (Q×f) of 3,600-11,100 GHz were obtained at sintering temperatures in the range 1425-1525°C for 4 h. The dielectric properties of the Nd(Ti₀.₅W₀.₅)O₄ ceramics at microwave frequencies were found to vary with the sintering temperature. For a further understanding of these microwave dielectric properties, they were analyzed by densification, X-ray diffraction (XRD), and by making microstructural observations.

Keywords: dielectric constant, dielectric resonators, sensors, quality factor

Procedia PDF Downloads 232