Search results for: perovskite light-emitting diodes

Authors: Taegyoo Woo, Jong Kang Park, Jong Tae Kim

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Visible Light Communication (VLC) provides wireless communication features in illumination systems. One of the key applications is to recognize the user location by indoor illuminators such as light emitting diodes. For localization of individual receivers in these systems, we usually assume that receivers and transmitters are placed in parallel. However, it is difficult to satisfy this assumption because the receivers move randomly in real case. It is necessary to analyze the case when transmitter is not placed perfectly parallel to receiver. It is also important to identify changes on optical gain by the tilted angles and distances of them against the illuminators. In this paper, we simulate optical gain for various cases where the tilt of the receiver and the distance change. Then, we identified changing patterns of optical gains according to tilted angles of a receiver and distance. These results can help many VLC applications understand the extent of the location errors with regard to optical gains of the receivers and identify the root cause.

Keywords: visible light communication, incident angle, optical gain, light emitting diode

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Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear

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High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f_-3dB) of 14 GHz and a resonance frequency (f_R) of 9.5 GHz at a bias current density (J_bias) of only 4.3 kA/cm², which corresponds to an improved f_-3dB²/J_bias ratio of 44 GHz²/kA/cm². At higher and lower bias current densities, the f_-3dB²/ J_bias ratio decreased to about 30 GHz²/kA/cm² and 18 GHz²/kA/cm², respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f_-3dB/ f_R ratio of 1.41±10% over the whole range of the bias current (1.3I_th to 6.2I_th). The devices also demonstrated a maximum modulation bandwidth (f_{-3dB max}) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.

Keywords: current density, high-speed VCSELs, modulation bandwidth, small-signal characteristics, thermal impedance, vertical-cavity surface-emitting lasers

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Authors: Deli Mona, Rafika Husni

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The aim of this research is to evaluate the effect of lighting distance on surface hardness of light composite resin. We held laboratory experimental research with post-test only group design. The samples used are 30 disc-like hybrid composite resins with the diameter is 6 mm and the thickness is 2 mm, lighted by an LED for 20 seconds. They were divided into 3 groups, and every group was consisted by 10 samples, which were 0 mm, 2 mm, and 5 mm lighting distance group. Every samples group was treated with hardness test, Vicker Hardness Test, then analyzed with one-way ANOVA test to evaluate the effect of lighting distance differences on surface hardness of light composite resin. Statistic test result shown hardness mean change of composite renin between 0 mm and 2 mm lighting distance with 0.00 significance (p<0.05), between 0 mm and 5 mm lighting distance with 0.00 significance (p<0.05), and 2 mm and 5 mm lighting distance with 0.05 significance (p<0.05). According to the result of this research, we concluded that the further lighting distance, the more surface hardness decline of hybrid composite resin.

Keywords: composite resin hybrid, tip distance, microhardness, light curing LED

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Authors: Geon Bae, Cheol Hee Moon

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Organic Light Emitting Diodes (OLEDs) are being developed rapidly as next-generation displays due to their self-luminous and flexible characteristics. OLEDs are highly susceptible to moisture and oxygen due to their structural properties. Thus, requiring a high level of encapsulation technology. Recently, encapsulation technology such as Thin Film Encapsulation (TFE) has been developed for OLED, but it is not perfect to prevent moisture permeation on the side. In this study, we propose OLED encapsulation method using Low melting Point Alloy (LMPA). The LMPA line was designed in square box shape on the outer edge of the device and was formed by screen printing method. To determine if LMPA has an effect on OLED, we fabricated solution processed OLEDs with a square-shaped LMPA line and evaluate the I-V-L characteristics of the OLEDs. Also, the resistance characteristic of the LMPA line was observed by repeatedly bending the LMPA line. It is expected that LMPA encapsulation will have a great advantage in shortening the process time and cost reduction.

Keywords: OLED, encapsulation, LMPA, solution process

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Authors: Hau-Wei Lee, Yu-Chi Liu, Chien-Hung Liu

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A mathematical model is presented for a system that measures rotational errors in a shaft using a ball lens. The geometric optical characteristics of the ball lens mounted on the shaft allows the measurement of rotation axis errors in both the radial and axial directions. The equipment used includes two quadrant detectors (QD), two laser diodes and a ball lens that is mounted on the rotating shaft to be evaluated. Rotational errors in the shaft cause changes in the optical geometry of the ball lens. The resulting deflection of the laser beams is detected by the QDs and their output signals are used to determine rotational errors. The radial and the axial rotational errors can be calculated as explained by the mathematical model. Results from system calibration show that the measurement error is within ±1 m and resolution is about 20 nm. Using a direct drive motor (DD motor) as an example, experimental results show a rotational error of less than 20 m. The most important features of this system are that it does not require the use of expensive optical components, it is small, very easy to set up, and measurements are highly accurate.

Keywords: ball lens, quadrant detector, axial error, radial error

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Authors: Abdelmadjid Mammeri, Fatima Zohra Mahi, Luca Varani, H. Marinchoi

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We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode.

Keywords: InGaAs transistors, InGaAs diode, admittance, resonant peaks, plasma waves, analytical model

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Authors: H. Krarcha

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The structural, elastic, vibrational and thermal properties of AHfO3 compounds with the cubic perovskites structure have been investigated, by employing a first principles method, using the plane wave pseudo potential calculations (PP-PW), based on the density functional theory (DFT), within the local density approximation (LDA). The optimized lattice parameters, independent elastic constants (C11, C12 and C44), bulk modulus (B), compressibility (b), shear modulus (G), Young’s modulus (Y ), Poisson’s ratio (n), Lame´’s coefficients (m, l), as well as band structure, density of states and electron density distributions are obtained and analyzed in comparison with the available theoretical and experimental data. For the first time the numerical estimates of elastic parameters of the polycrystalline AHfO3 ceramics (in framework of the VoigteReusseHill approximation) are performed. The quasi-harmonic Debye model, by means of total energy versus volume calculations obtained with the FP-LAPW method, is applied to study the thermal and vibrational effects. Predicted temperature and pressure effects on the structural parameters, thermal expansions, heat capacities, and Debye temperatures are determined from the non-equilibrium Gibbs functions.

Keywords: Hafnium, elastic propreties, first principles calculation, perovskite

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Authors: Radhapiyari Laishram, Chongtham Jiten, K. Chandramani Singh

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During the last decade, there has been a significant growth in developing lead-free piezoelectric ceramics which have the potential to replace the currently dominant but highly superior lead-based piezoelectric materials such as PZT. Among the lead-free piezoelectrics, (K0.5Na0.5)NbO3 - based piezoceramics are promising candidates due to their superior piezoelectric properties and high Curie temperatures. In this work, (K0.5Na0.5)(Nb1-xVx)O3 powders with x varying the range 0 to 0.05 were synthesized from the raw materials K2CO3, Na2CO3, Nb2O5, and V2O5. These powders were ball milled with high-energy Retsch PM 100 ball mill using isopropanol as the medium at the speed of 200rpm for a duration of 8h. The milled powders were sintered at 1080oC for 1h. The crystalline phase of all the calcined powders and corresponding ceramics prepared was found to be perovskite with orthorhombic symmetry. The ceramic with V5+ content of x=0.03 exhibits the maximum values in density of 4.292 g/cc, room temperature dielectric constant (εr) of 432, and piezoelectric charge constant (d33) of 93pC/N. For this sample, the dielectric tan δ loss remains relatively low over a wide temperature range. The temperature dependence of P-E hysteresis loops has been investigated for the ceramic composition with x = 0.03.

Keywords: dielectric properties, ferroelectric properties, perovskie, piezoelectric properties

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Authors: Alok Tiwari, Ming Show Wong

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Lanthanum (La) doped Barium Tin Oxide (BaSnO₃) film is an excellent alternative for expensive Transparent Conducting Oxides (TCOs) film such as Indium Tin Oxide (ITO). However single crystal film of La-doped BaSnO₃ has been reported with a good amount of conductivity and transparency but in order to improve its reachability, it is important to grow doped BaSO₃ films on an inexpensive substrate. La-doped BaSnO₃ thin films have been grown on quartz substrate by Radio Frequency (RF) sputtering at a different substrate temperature (from 200⁰C to 750⁰C). The thickness of the film measured was varying from 360nm to 380nm with varying substrate temperature. Structure, optical and electrical properties have been studied. The carrier concentration is seen to be decreasing as we enhance the substrate temperature while mobility found to be increased up to 9.3 cm²/V-S. At low substrate temperature resistivity found was lower (< 3x10⁻³ ohm-cm) while sudden enhancement was seen as substrate temperature raises and the trend continues further with increasing substrate temperature. Optical transmittance is getting better with higher substrate temperature from 70% at 200⁰C to > 80% at 750⁰C. Overall, understanding of changes in microstructure, electrical and optical properties of a thin film by varying substrate temperature has been reported successfully.

Keywords: conductivity, perovskite, mobility, TCO film

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode (SBD), high breakdown voltage, Baliga’s figure-of-merit, field plate

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Authors: Valerio D’Andrea

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The GERmanium Detector Array (GERDA) experiment, located at the Laboratori Nazionali del Gran Sasso (LNGS) of INFN, searches for 0νββ of 76Ge. Germanium diodes enriched to ∼ 86 % in the double beta emitter 76Ge(enrGe) are exposed being both source and detectors of 0νββ decay. Neutrinoless double beta decay is considered a powerful probe to address still open issues in the neutrino sector of the (beyond) Standard Model of particle Physics. Since 2013, just after the completion of the first part of its experimental program (Phase I), the GERDA setup has been upgraded to perform its next step in the 0νββ searches (Phase II). Phase II aims to reach a sensitivity to the 0νββ decay half-life larger than 1026 yr in about 3 years of physics data taking. This exposing a detector mass of about 35 kg of enrGe and with a background index of about 10^−3 cts/(keV·kg·yr). One of the main new implementations is the liquid argon scintillation light read-out, to veto those events that only partially deposit their energy both in Ge and in the surrounding LAr. In this paper, the GERDA Phase II expected goals, the upgrade work and few selected features from the 2015 commissioning and 2016 calibration runs will be presented. The main Phase I achievements will be also reviewed.

Keywords: gerda, double beta decay, LNGS, germanium

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Authors: Geetanjali Singh, R. J. Choudhary, Anjana Dogra

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Here we report the effects of anti-site disorder, present in the sample, on the magnetic properties of Sm₂NiMnO₆ (SNMO) thin films. To our best knowledge, there are no studies available on the thin films of SNMO. Thin films were grown using pulsed laser deposition technique on SrTiO₃ (STO) substrate under oxygen pressure of 800 mTorr. X-ray diffraction (XRD) profiles show that the film grown is epitaxial. Field cooled (FC) and zero field cooled (ZFC) magnetization curve increase as we decrease the temperature till ~135K. A broad dip was observed in both the curves below this temperature which is more dominating in ZFC curve. An additional sharp cusplike shape was observed at low temperature (~20 K) which is due to the re-entrant spin-glass like properties present in the sample. Super-exchange interaction between Ni²⁺-O-Mn⁴⁺ is attributed to the FM ordering in these samples. The spin-glass feature is due to anti-site disorder within the homogeneous sample which was stated to be due to the mixed valence states Ni³⁺ and Mn³⁺ present in the sample. Anti-site disorder was found to play very crucial role in different magnetic phases of the sample.

Keywords: double perovskite, pulsed laser deposition, spin-glass, magnetization

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Authors: Esubalew Yehualaw Melaku, Tizazu Abeza

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ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400oC. This research aimed to investigate the effect of annealing on the structural, optical, and electrical properties of the films. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of the ZnSe thin film. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research, ZnSe is used for certain applications; it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.

Keywords: chemical bath deposition, ZnSe thin film, band gap, solar cells

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Authors: Nuray Yılmaz Baran

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The conjugated Schiff base polymers which are also called as polyazomethines are promising materials for various applications due to their good thermal resistance semiconductive, liquid crystal, fiber forming, nonlinear optical outstanding photo- and electroluminescence and antimicrobial properties. In recent years, polyazomethines have attracted intense attention of researchers especially due to optoelectronic properties which have made its usage possible in organic light emitting diodes (OLEDs), solar cells (SCs), organic field effect transistors (OFETs), and photorefractive holographic materials (PRHMs). In this study, N-(pyridin-2-ylmethylidene)pyridin-2-amine Schiff base was synthesized from condensation reaction of 2-aminopyridine with 2-pyridine carbaldehyde. Polymerization of Schiff base was achieved by polycondensation reaction using NaOCl oxidant in methanol medium at various time and temperatures. The synthesized Schiff base monomer and polymer (Poly(N-(pyridin-2-ylmethylidene)pyridin-2-amine)) was characterized by UV-vis, FT-IR, 1H-NMR, XRD techniques. Molecular weight distribution and the surface morphology of the polymer was determined by GPC and SEM-EDAX techniques. Thermal behaviour of the monomer and polymer was investigated by TG/DTG, DTA and DSC techniques.

Keywords: polyazomethines, polycondensation reaction, Schiff base polymers, thermal stability

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Authors: Matúš Mihalik, Martin Vavra, Kornel Csach, Marián Mihalik

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GdMnO₃ belongs to orthorhombically distorted, GdFeO₃-type family of perovskite compounds. These compounds are naturally vacant and the amount of vacancies depend on the sample preparation conditions. Our GdMnO₃ samples were prepared by float zone method and the vacancies were controlled using an air, Ar and O₂ preparation atmosphere. The highest amount of vacancies was found for sample prepared in Ar atmosphere, while the sample prepared in O₂ was observed to be almost vacancy-free. The magnetic measurements indicate that the preparation atmosphere has no impact on Néel temperature (TN ~ 42 K), however, it has strong impact on the incommensurate antiferromagnetic (IC) to canted A-type weak ferromagnetic (AWF) phase transition at T1: T1 = 23.4 K; 18 K and 6.7 K for samples prepared in Ar; air and O₂ atmosphere; respectively. The hysteresis loop measured at 2 K has a butterfly-type shape with the remnant magnetization (Mr) of 0.6 µB/f.u. for Ar and air sample, while Mr = 0.3 µB/f.u. for O₂ sample. The shape of the hysteresis loop depends on the preparation atmosphere in magnetic fields up to 1.5 T, but is independent for higher magnetic fields. The coercive field of less than 0.06 T and the maximum magnetic moment of 6 µB/f.u. at magnetic field µ0H = 7 T do not depend on the preparation atmosphere. All these findings indicate that only AWF phase of GdMnO₃ compound is directly affected by the vacancies in the system, while IC phase and the field induced ferroelectric phase are not affected.

Keywords: magnetism, perovskites, sample preparation, magnetic phase transition

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Authors: Mohit Kalra, Varun S., Mayuri Gandhi

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CeF3 nanophosphors has been extensively investigated in the recent years for lighting and numerous bio-applications. Down conversion emissions in CeF3:Eu3+/Tb3+ phosphors were studied with the aim of obtaining a white light emitting composition, by a simple co-precipitation method. The material was characterized by X-ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HR-TEM), Fourier Transform Infrared Spectroscopy (FT-IR) and Photoluminescence (PL). Uniformly distributed nanoparticles were obtained with an average particle size 8-10 nm. Different doping concentrations were performed and fluorescence study was carried out to optimize the dopants concentration for maximum luminescence intensity. The steady state and time resolved luminescence studies confirmed efficient energy transfer from the host to activator ions. Different concentrations of Tb 3+, Eu 3+ were doped to achieve a white light emitting phosphor for UV-based Light Emitting Diodes (LEDs). The nanoparticles showed characteristic emission of respective dopants (Eu 3+, Tb3+) when excited at the 4f→5d transition of Ce3+. The chromaticity coordinates for these samples were calculated and the CeF3 doped with Eu 3+ and Tb3+ gave an emission very close to white light. These materials may find its applications in optoelectronics and various bio applications.

Keywords: white light down-conversion, nanophosphors, LEDs, rare earth, cerium fluoride, lanthanides

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Authors: Yeon Woo Seo, Haeyoung Choi, Jung Hyun Jeong

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Recently, the UC phosphors have attracted much attention owing to their wide applicability in areas such as biological fluorescence labeling, three-dimensional color displays, temperature sensor, solar cells, white light emitting diodes (WLEDs), fiber optic communication, anti-counterfeiting and other areas. The UC efficiency is mainly dependent on the host lattice and the interaction between the host lattice and doped ions. Up to date, various host matrices, such as oxides, fluorides, vanadates and phosphates, have been investigated as efficient UC luminescent hosts. Recently, oxide materials with low phonon energy have been investigated as the host matrices of UC materials due to their high chemical durability and physical stability. A series of Sr2CeO4: Tm3+/Yb3+ phosphors with different concentrations of Yb3+ ions have been successfully prepared using the high-energy ball milling method. In this study, we reported the UC luminescent properties of Tm3+/Yb3+ ions co-doped Sr2CeO4 phosphors under an excitation wavelength of 975 nm. Furthermore, the structural and morphological characteristics, as well as the UC luminescence mechanism were investigated in detail. The X-ray diffraction patterns confirmed their orthorhombic structure. Under 975 nm excitation, the emission peaks were observed at 478 nm (blue) and 652 nm (red), corresponding to the 1G4 → 3H6 and 1G4 → 3F4 transitions of Tm3+, respectively. The optimized doping concentration of Yb3+ ion was 10 mol%.

Keywords: Strontium Cerate, up-conversion, luminescence, Tm3+, Yb3+

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Authors: Amel Souidi, S. Bentata, B. Bouadjemi, T. Lantri, Z. Aziz

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Perovskite materials which include magnetic elements have relevance due to the technological perspectives in the spintronics industry. In this work, we have investigated the structural, electronic and magnetic properties of double perovskites Ba2MnXO6 with X= Mo and W by using the full-potential linearized augmented plane wave (FP-LAPW) method based on Density Functional Theory (DFT) [1, 2] as implemented in the WIEN2K [3] code. The interchange-correlation potential was included through the generalized gradient approximation (GGA) [4] as well as taking into account the on-site coulomb repulsive interaction in (GGA+U) approach. We have analyzed the structural parameters, charge and spin densities, total and partial densities of states. The results show that the materials crystallize in the 225 space group (Fm-3m) and have a lattice parameter of about 7.97 Å and 7.95 Å for Ba2MnMoO6 and Ba2MnWO6, respectively. The band structures reveal a metallic ferromagnetic (FM) ground state in Ba2MnMoO6 and half-metallic (HM) ferromagnetic (FM) ground state in the Ba2MnWO6 compound, with total magnetic moment equal 2.9951μB (Ba2MnMoO6 ) and 4.0001μB (Ba2MnWO6 ). The GGA+U calculations predict an energy gap in the spin-up bands in Ba2MnWO6. So we estimate that this material with HM-FM nature implies a promising application in spin-electronics technology.

Keywords: double perovskites, electronic structure, first-principles, semiconductors

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Authors: Mihai I. Sturza, Laura T. Corredor, Kaustuv Manna, Gizem A. Cansever, Tushar Dey, Andrey Maljuk, Olga Kataeva, Sabine Wurmehl, Anja Wolter, Bernd Buchner

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Recently, the iridate double perovskite Sr₂YIrO₆ has attracted considerable attention due to the report of unexpected magnetism in this Ir⁵⁺ material, in which according to the Jeff model, a non-magnetic ground state is expected. Structural, magnetic and thermodynamic investigations of Sr₂YIrO₆ and Ba2YIrO6 single crystals, with emphasis on the temperature and magnetic field dependence of the specific heat will be presented. The single crystals were grown by using SrCl₂ and BaCl₂ as flux. Single-crystal X-ray diffraction measurements performed on several crystals from different preparation batches showed a high quality of the crystals, proven by the good internal consistency of the data collected using the full-sphere mode and an extremely low R factor. In agreement with the expected non-magnetic ground state of Ir⁵⁺ (5d4) in these iridates, no magnetic transition is observed down to 430 mK. Moreover, our results suggest that the low-temperature anomaly observed in the specific heat is not related to the onset of long-range magnetic order. Instead, it is identified as a Schottky anomaly caused by paramagnetic impurities present in the sample, of the order of

Keywords: double perovskites, iridates, self-flux grown synthesis, spin-orbit coupling

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Authors: Wonkyung Na, Namhun Kim, Heeyeop Chae

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Quantum dots (QDs) are getting attentions due to their excellent optical properties in display, solar cell, biomolecule detection and lighting applications. Energy band gap can be easilty controlled by controlling their size and QDs are proper to apply in light-emitting-diode(LED) and lighting application, especially. Typically cadmium (Cd) containing QDs show a narrow photoluminescence (PL) spectrum and high quantum yield. However, Cd is classified as a hazardous materials and the use of Cd is being tightly regulated under 100ppm level in many countries.InP and CuInS2 (CIS) are being investigated as Cd-free QD materials and it is recently demonstrated that the performance of those Cd-free QDs is comparable to their Cd-based rivals.Due to a broad emission spectrum, CuInS2 QDs are also proper to be applied to white LED.4 For the lighting applications, the QD should be made in forms of color conversion films. Various film processes are reported with QDs in polymer matrixes. In this work, we synthesized the CuInS2 (CIS) QDs and QD embedded polystyrene color conversion films were fabricated for white color emission with electro-spinning process. As a result, blue light from blue LED is converted to white light with high color rendering index (CRI) of 72 by the color conversion films.

Keywords: CuInS2/ZnS, electro-spinning, color conversion films, white light emitting diodes

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Authors: Pejman Hosseinioun, Abolghasem Ghasempour, Elham Gholami, Hamed Sarbazi

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Considering the development in global semiconductor technology, it is anticipated that gadgets such as diodes and resonant transistor tunnels (RTD/RTT), Single electron transistors (SET) and quantum cellular automata (QCA) will substitute CMOS (Complementary Metallic Oxide Semiconductor) gadgets in many applications. Unfortunately, these new technologies cannot disembark the common Boolean logic efficiently and are only appropriate for liminal logic. Therefor there is no doubt that with the development of these new gadgets it is necessary to find new MacDraw technologies which are compatible with them. Resonant transistor tunnels (RTD/RTT) and circuit MacDraw with enhanced computing abilities are candida for accumulating Nano criterion in the future. Quantum cellular automata (QCA) are also advent Nano technological gadgets for electrical circuits. Advantages of these gadgets such as higher speed, smaller dimensions, and lower consumption loss are of great consideration. QCA are basic gadgets in manufacturing gates, fuses and memories. Regarding the complex Nano criterion physical entity, circuit designers can focus on logical and constructional design to decrease complication in MacDraw. Moreover Single electron technology (SET) is another noteworthy gadget considered in Nano technology. This article is a survey in future of Nano technology in digital MacDraw.

Keywords: nano technology, resonant transistor tunnels, quantum cellular automata, semiconductor

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Authors: Pravin M. Tirmali, Sagar M. Mane, Snehal L. Kadam, Shriniwas B. Kulkarni

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The La₂NiMnO₆ has been extensively studied for its ferromagnetic and magneto-dielectric properties. The La₂NiMnO₆ double perovskite is modified by partial substitution at B site by Fe transition metal. The La₂Ni₁₋ₓFeₓMnO₆ powder samples were synthesized by hydroxide co-precipitation method. The precipitate was dried and fine griended to form powder and pellet samples (2cm dia.) using hydraulic press. The powder and pellet samples of La₂Ni₁₋ₓFeₓMnO₆ were calcined at high temperature 1200°C to form a pure and stable composition. The nano polar regions (NPR) around Ni²⁺ or Mn⁴⁺ ions due to the cationic antisite disorder gives dielectric relaxation through their mutual interaction. The magneto-dielectric behavior is observed in substituted La₂NiMnO₆ shows Maxwell-Wagner and Debye relaxation due to grain boundary, interface and antisite defects. The magneto-dielectric properties of substituted La₂NiMnO₆ pellet sample were probed by Impedance spectroscopy measurements. The structural and magnetic investigations were also carried out by XRD, FESEM and VSM measurements of substituted La₂NiMnO₆ of powder samples. The synthesized La₂Ni₁₋ₓFeₓMnO₆ powder samples are polycrystalline and ferromagnetic in nature. The La₂Ni₁₋ₓFeₓMnO₆ samples exhibit ferromagnetic disorder with transition temperature near room temperature.

Keywords: La₂NiMnO₆, nano polar regions (NPR), antisite defects, magnetodielctric

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Authors: Peiyuan Guan, Tao Wan, Dewei Chu

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With the flash memory approaching its physical limit, the emerging resistive random-access memory (RRAM) has been considered as one of the most promising candidates for the next-generation non-volatile memory. One selector-one resistor configuration has shown the most promising way to resolve the crosstalk issue without affecting the scalability and high-density integration of the RRAM array. By comparison with other candidates of selectors (such as diodes and nonlinear devices), threshold switching selectors dominated by formation/spontaneous rupture of fragile conductive filaments have been proved to possess low voltages, high selectivity, and ultra-low current leakage. However, the flexibility and transparency of selectors are barely mentioned. Therefore, it is a matter of urgency to develop a selector with highly flexible and transparent properties to assist the application of RRAM for a diversity of memory devices. In this work, threshold switching selectors were designed using a facilely solution-processed fabrication on AgNWs@PDMS composite films, which show high flexibility, transparency and scratch resistance. As-fabricated threshold switching selectors also have revealed relatively high selectivity (~107), low operating voltages (Vth < 1 V) and good switching performance.

Keywords: flexible and transparent, resistive random-access memory, silver nanowires, threshold switching selector

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Authors: Ankit Kargeti, Ravikant Shrivastav, Tabish Rasheed

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The electronic structure calculation for the nanoclusters of AsSiTeB/SiAsBTe quaternary semiconductor alloy belonging to the III-V Group elements was performed. Motivation for this research work was to look for accurate electronic and geometric data of small nanoclusters of AsSiTeB/SiAsBTe in the gaseous form. The two clusters, one in the linear form and the other in the bent form, were studied under the framework of Density Functional Theory (DFT) using the B3LYP functional and LANL2DZ basis set with the software packaged Gaussian 16. We have discussed the Optimized Energy, Frontier Orbital Energy Gap in terms of HOMO-LUMO, Dipole Moment, Ionization Potential, Electron Affinity, Binding Energy, Embedding Energy, Density of States (DoS) spectrum for both structures. The important findings of the predicted nanostructures are that these structures have wide band gap energy, where linear structure has band gap energy (Eg) value is 2.375 eV and bent structure (Eg) value is 2.778 eV. Therefore, these structures can be utilized as wide band gap semiconductors. These structures have high electron affinity value of 4.259 eV for the linear structure and electron affinity value of 3.387 eV for the bent structure form. It shows that electron acceptor capability is high for both forms. The widely known application of these compounds is in the light emitting diodes due to their wide band gap nature.

Keywords: density functional theory, DFT, density functional theory, nanostructures, HOMO-LUMO, density of states

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Authors: Karthika Chandran, Pulkit Prakash, Amitabh Das, Santhosh P. N.

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Rare earth orthoferrites (RFeO₃) exhibit interesting and useful magnetic properties like multiferroicity, magnetodielectric coupling, spin reorientation (SR) and exchange bias. B site doped RFeO₃ are attracting attention due to the complex and tuneable magnetic transitions. In this work, 45% Mn-doped HoFeO₃ polycrystalline sample (HoFe₀.₅₅Mn₀.₄₅O₃) was synthesized by a solid-state reaction method. The magnetic structure and transitions were studied by magnetization measurements and neutron powder diffraction methods. The neutron diffraction patterns were taken at 13 different temperatures from 7°K to 300°K (7°K and 25°K to 300°K in 25°K intervals). The Rietveld refinement was carried out by using a FULLPROF suite. The magnetic space groups and the irreducible representations were obtained by SARAh module. The room temperature neutron diffraction refinement results indicate that the sample crystallizes in an orthorhombic perovskite structure with Pnma space group with lattice parameters a = 5.6626(3) Ǻ, b = 7.5241(3) Ǻ and c = 5.2704(2) Ǻ. The temperature dependent magnetization (M-T) studies indicate the presence of two magnetic transitions in the system ( TN Fe/Mn~330°K and TSR Fe/Mn ~290°K). The inverse susceptibility vs. temperature curve shows a linear behavior above 330°K. The Curie-Weiss fit in this region gives negative Curie constant (-34.9°K) indicating the antiferromagnetic nature of the transition. The neutron diffraction refinement results indicate the presence of mixed magnetic phases Γ₄(AₓFᵧG

Keywords: neutron powder diffraction, rare earth orthoferrites, Rietveld analysis, spin reorientation

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Authors: Muhammad Habib, Xuefan Zhou, Lin Tang, Guoliang Xue, Fazli Akram, Dou Zhang

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Defect engineering approach is a well-established approach for the customization of functional properties of perovskite ceramics. In modern technology, the high multiferroic properties for elevated temperature applications are greatly demanding. In this work, the Bi-nonstoichiometric lead-free 0.67Biy-xSmxFeO3-0.33BaTiO3 ceramics (Sm-doped BF-BT for Bi-excess; y = 1.03 and Bi-deficient; y = 0.975 with x = 0.00, 0.04 and 0.08) were design for the high-temperature multiferroic property. Enhanced piezoelectric (d33  250 pC/N and d33* 350 pm/V) and magnetic properties (Mr  0.25 emu/g) with a high Curie temperature (TC  465 ℃) were obtained in the Bi-deficient pure BF-BT ceramics. With Sm-doping (x = 0.04), the TC decrease to 350 ℃ a significant improvement occurred in the d33* to 504 pm/V and 450 pm/V for Bi-excess and Bi-deficient compositions, respectively. The structural origin of the enhanced piezoelectric strain performance is related to the soft ferroelectric effect by Sm-doping and reversible phase transition from the short-range relaxor ferroelectric state to the long-range order under the applied electric field. However, a slight change occurs in the Mr 0.28 emu/g value with Sm-doping for Bi-deficient ceramics, whereas the Bi-excess ceramics shows completely paramagnetic behavior. Hence, the origin of high magnetic properties in the Bi-deficient BF-BT ceramics is mainly attributed to the proposed double exchange mechanism. We believe that this strategy will provide a new perspective for the development of lead-free multiferroic ceramics for high-temperature applications.

Keywords: BiFeO3-BaTiO3, lead-free piezoceramics, magnetic properties, defect engineering

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Authors: Jiajia Yao, Guanlin Wu, Fang Liu, Junshuai Xue, Yue Hao

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This study reports on the epitaxial growth of a GaN-based resonant tunneling diode (RTD) structure with stable and repeatable double negative differential resistance (NDR) characteristics at room temperature on a c-plane GaN-on-sapphire template using plasma-assisted molecular beam epitaxy (PA-MBE) technology. In this structure, two independent AlN/GaN RTDs are epitaxially connected in series in the vertical growth direction through a silicon-doped GaN layer. As the collector electrode bias voltage increases, the two RTDs respectively align the ground state energy level in the quantum well with the 2DEG energy level in the emitter accumulation well to achieve quantum resonant tunneling and then reach the negative differential resistance (NDR) region. The two NDR regions exhibit similar peak current densities and peak-to-valley current ratios, which are 230 kA/cm² and 249 kA/cm², 1.33 and 1.38, respectively, for a device with a collector electrode mesa diameter of 1 µm. The consistency of the NDR is much higher than the results of on-chip discrete RTD device interconnection, resulting from the smaller chip area, fewer interconnect parasitic parameters, and less process complexity. The methods and results presented in this paper show the brilliant prospects of GaN RTDs in the development of multi-value logic digital circuits.

Keywords: MBE, AlN/GaN, RTDs, double NDR

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Authors: Somnath Mahato, Minarul Islam Sarkar, Luis Guillermo Gerling, Joaquim Puigdollers, Asit Kumar Kar

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Nanostructured Zinc Oxide (ZnO) thin films have been successfully deposited on indium tin oxide (ITO) coated glass substrates by a simple two electrode electrodeposition process at constant potential. The preparative parameters such as deposition time, deposition potential, concentration of solution, bath temperature and pH value of electrolyte have been optimized for deposition of uniform ZnO thin films. X-ray diffraction studies reveal that the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal (wurtzite) structure. Surface morphological studies show that the ZnO films are smooth, continuous, uniform without cracks or holes and compact with nanorod-like structure on the top of the surface. Optical properties reveal that films exhibit higher absorbance in the violet region of the optical spectrum; it gradually decreased in the visible range with increases in wavelength and became least at the beginning of NIR region. The photoluminescence spectra shows that the observed peaks are attributed to the various structural defects in the nanostructured ZnO crystal. The microstructural and optical properties suggest that the electrodeposited ZnO thin films are suitable for application in photosensitive devices such as photovoltaic solar cells photoelectrochemical cells and light emitting diodes etc.

Keywords: electrodeposition, microstructure, optical properties, ZnO thin films

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Authors: M. Mesrar, T. Lamcharfi, Nor-S. Echatoui, F. Abdi

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The solid-state reaction method was used to synthesize ferroelectric systems with lead-free properties, specifically (1-x-y)(Na₀.₅Bi₀.₅)TiO₃-xBaTiO₃-y(K₀.₅ Bi₀.₅)TiO₃. To achieve a pure perovskite phase, the optimal calcination temperature was determined to be 1000°C for 4 hours. X-ray diffraction (XRD) analysis identified the presence of the morphotropic phase boundary (MPB) in the (1-x-y)NBT xBT-yKBT ceramics for specific molar compositions, namely (0.95NBT-0.05BT, 0.84NBT-0.16KBT, and 0.79NBT-0.05BT-0.16KBT). To enhance densification, the sintering temperature was set at 1100°C for 4 hours. Scanning electron microscopy (SEM) images exhibited homogeneous distribution and dense packing of the grains in the ceramics, indicating a uniform microstructure. These materials exhibited favorable characteristics, including high dielectric permittivity, low dielectric loss, and diffused phase transition behavior. The ceramics composed of 0.79NBT-0.05BT-0.16KBT exhibited the highest piezoelectric constant (d33=148 pC/N) and electromechanical coupling factor (kp = 0.292) among all compositions studied. This enhancement in piezoelectric properties can be attributed to the presence of the morphotropic phase boundary (MPB) in the material. This study presents a comprehensive approach to improving the performance of lead-free ferroelectric systems of composition 0.79(Na₀.₅Bi₀.₅)Ti O₃-0.05BaTiO₃-0.16(K₀.₅Bi₀.₅)TiO₃.

Keywords: solid-state method, (1-x-y)NBT-xBT-yKBT, morphotropic phase boundary, Raman spectroscopy, dielectric properties

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Authors: H. Zouaoui, D. Abdi, B. Nessark, F. Habelhames, A. Bahloul

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Among the conjugated organic polymers, the polythiophenes constitute a particularly important class of conjugated polymers, which has been extensively studied for the relation between the geometrical structure and the optic and electronic properties, while the polythiophene is an intractable material. They are, furthermore, chemically and thermally stable materials, and are very attractive for exploitation of their physical properties. The polythiophenes are extensively studied due to the possibility of synthesizing low band gap materials by using substituted thiophenes as precursors. Low band gap polymers may convert visible light into electricity and some photoelectrochemical cells based on these materials have been prepared. Polythiophenes (PThs) are good candidates for polymer optoelectronic devices such as polymer solar cells (PSCs) polymer light-emitting diodes (PLEDs) field-effect transistors (FETs) electrochromics and biosensors. In this work, MnO2 has been synthesized by hydrothermal method and analyzed by infrared spectroscopy. The polybithiophene+MnO2 composite films were electrochemically prepared by cyclic voltammetry technic on a conductor glass substrate ITO (indium–tin-oxide). The composite films are characterized by cyclic voltammetry, impedance spectroscopy and photoelectrochemical analyses. The results confirmed the presence of manganese dioxide nanoparticles in the polymer layer. An application has been made by using these deposits as an electrode in a photoelectrochemical cell for measuring photocurrent tests. The composite films show a significant photocurrent intensity 80 μA.cm-2.

Keywords: polybithiophene, MnO2, photoelectrochemical cells, composite films

Procedia PDF Downloads 335