Search results for: voltage unbalance factor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6235

Search results for: voltage unbalance factor

6145 Protection of Transformers Against Surge Voltage

Authors: Anil S. Khopkar, Umesh N. Soni

Abstract:

Surge voltage arises in the system either by switching operations of heavy load or by natural lightning. Surge voltages cause significant failure of power system equipment if adequate protection is not provided. A Surge Arrester is a device connected to a power system to protect the equipment against surge voltages. To protect the transformers against surge voltages, metal oxide surge arresters (MOSA) are connected across each terminal. Basic Insulation Level (BIL) has been defined in national and international standards of transformers based on their voltage rating. While designing transformer insulation, the BIL of the transformer, Surge arrester ratings and its operating voltage have to be considered. However, the performance of transformer insulation largely depends on the ratings of the surge arrester connected, the location of the surge arrester, the margin considered in the insulation design, the quantity of surge voltage strike, etc. This paper demonstrates the role of Surge arresters in the protection of transformers against over-voltage, transformer insulation design, optimum location of surge arresters and their connection lead length, Insulation coordination for transformer, protection margin in BIL and methods of protection of transformers against surge voltages, in detail.

Keywords: surge voltage, surge arresters, insulation coordination, protection margin

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6144 Fabrication and Analysis of Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS)

Authors: Deepika Sharma, Bal Krishan

Abstract:

In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed.

Keywords: on-resistance, threshold voltage, epitaxial layer, breakdown voltage

Procedia PDF Downloads 295
6143 Study on the Voltage Induced Wrinkling of Elastomer with Different Electrode Areas

Authors: Zhende Hou, Fan Yang, Guoli Zhang

Abstract:

Dielectric elastomer is a promising class of Electroactive polymers which can deform in response to an applied electric field. Comparing general smart material, the Dielectric elastomer is more compliance and can achieve higher energy density, which can be for diverse applications such as actuators, artificial muscles, soft robotics, and energy harvesters. The coupling of the Electroactive polymers and the electric field is that the elastomer is sandwiched between two compliant electrodes and when the electrodes are subjected to a voltage, the positive and negative charges on the two electrodes compress the polymer, so that the polymer reduces in thickness and expands in area. However, the pre-stretched dielectric elastomer film not only can achieve large electric-field induced deformation but also is prone to wrinkling, under the interaction of its own strain energy and the applied electric field energy. For a uniaxially pre-stretched dielectric elastomer film, the electrode area is an important parameter to the electric-field induced deformation and may also be a key factor affecting the film wrinkling. To determine and quantify the effect experimentally, VHB 9473 tapes were employed and compliant electrodes with different areas were pant on each of them. The tape was first tensed to a uniaxial stretch of 8. Then a DC voltage was applied to the electrodes and increased gradually until wrinkling occurred in the film. Then, the critical wrinkling voltages of the film with different electrode areas were obtained, and the wrinkle wavelengths were obtained simultaneously for analyzing the wrinkling characteristics. Experimental results indicate when the electrode area is smaller the wrinkling voltage is higher, and with the increases of electrode area, the wrinkling voltage decreases rapidly until a specific area. Beyond that, the wrinkling voltage becomes larger gradually with the increases of the area. While the wrinkle wavelength decreases gradually with the increase of voltage monotonically. That is, the relation between the critical wrinkling voltage and the electrode areas is U-shaped. Analysis believes that the film wrinkling is a kind of local effect, the interaction and the energy transfer between electrode region and non-electrode region have great influence on wrinkling. In the experiment, very thin copper wires are used as the electrode leads that just contact with the electrodes, which can avoid the stiffness of the leads affecting the wrinkling.

Keywords: elastomers, uniaxial stretch, electrode area, wrinkling

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6142 The Influence of Disturbances Generated by Arc Furnaces on the Power Quality

Authors: Z. Olczykowski

Abstract:

The paper presents the impact of work on the electric arc furnace. Arc equipment is one of the largest receivers powered by the power system. Electric arc disturbances arising during melting process occurring in these furnaces are the cause of an abrupt change of the passive power of furnaces. Currents drawn by these devices undergo an abrupt change, which in turn cause voltage fluctuations and light flicker. The quantitative evaluation of the voltage fluctuations is now the basic criterion of assessment of an influence of unquiet receiver on the supplying net. The paper presents the method of determination of range of voltage fluctuations and light flicker at parallel operation of arc devices. The results of measurements of voltage fluctuations and light flicker indicators recorded in power supply networks of steelworks were presented, with different number of parallel arc devices. Measurements of energy quality parameters were aimed at verifying the proposed method in practice. It was also analyzed changes in other parameters of electricity: the content of higher harmonics, asymmetry, voltage dips.

Keywords: power quality, arc furnaces, propagation of voltage fluctuations, disturbances

Procedia PDF Downloads 109
6141 Design and Development of Tandem Dynamometer for Testing and Validation of Motor Performance Parameters

Authors: Vedansh More, Lalatendu Bal, Ronak Panchal, Atharva Kulkarni

Abstract:

The project aims at developing a cost-effective test bench capable of testing and validating the complete powertrain package of an electric vehicle. Emrax 228 high voltage synchronous motor was selected as the prime mover for study. A tandem type dynamometer comprising of two loading methods; inertial, using standard inertia rollers and absorptive, using a separately excited DC generator with resistive coils was developed. The absorptive loading of the prime mover was achieved by implementing a converter circuit through which duty of the input field voltage level was controlled. This control was efficacious in changing the magnetic flux and hence the generated voltage which was ultimately dropped across resistive coils assembled in a load bank with all parallel configuration. The prime mover and loading elements were connected via a chain drive with a 2:1 reduction ratio which allows flexibility in placement of components and a relaxed rating of the DC generator. The development will aid in determination of essential characteristics like torque-RPM, power-RPM, torque factor, RPM factor, heat loads of devices and battery pack state of charge efficiency but also provides a significant financial advantage over existing versions of dynamometers with its cost-effective solution.

Keywords: absorptive load, chain drive, chordal action, DC generator, dynamometer, electric vehicle, inertia rollers, load bank, powertrain, pulse width modulation, reduction ratio, road load, testbench

Procedia PDF Downloads 190
6140 Effect of Parameters for Exponential Loads on Voltage Transmission Line with Compensation

Authors: Benalia Nadia, Bensiali Nadia, Zerzouri Noura

Abstract:

This paper presents an analysis of the effects of parameters np and nq for exponential load on the transmission line voltage profile, transferred power and transmission losses for different shunt compensation size. For different values for np and nq in which active and reactive power vary with it is terminal voltages as in exponential form, variations of the load voltage for different sizes of shunt capacitors are simulated with a simple two-bus power system using Matlab SimPowerSystems Toolbox. It is observed that the compensation level is significantly affected by the voltage sensitivities of loads.

Keywords: static load model, shunt compensation, transmission system, exponentiel load model

Procedia PDF Downloads 339
6139 A CMOS-Integrated Hall Plate with High Sensitivity

Authors: Jin Sup Kim, Min Seo

Abstract:

An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT.

Keywords: cross-shaped hall plate, sensitivity, CMOS technology, Helmholtz coil

Procedia PDF Downloads 169
6138 Sampling Effects on Secondary Voltage Control of Microgrids Based on Network of Multiagent

Authors: M. J. Park, S. H. Lee, C. H. Lee, O. M. Kwon

Abstract:

This paper studies a secondary voltage control framework of the microgrids based on the consensus for a communication network of multiagent. The proposed control is designed by the communication network with one-way links. The communication network is modeled by a directed graph. At this time, the concept of sampling is considered as the communication constraint among each distributed generator in the microgrids. To analyze the sampling effects on the secondary voltage control of the microgrids, by using Lyapunov theory and some mathematical techniques, the sufficient condition for such problem will be established regarding linear matrix inequality (LMI). Finally, some simulation results are given to illustrate the necessity of the consideration of the sampling effects on the secondary voltage control of the microgrids.

Keywords: microgrids, secondary control, multiagent, sampling, LMI

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6137 Artificial Neural Networks Controller for Power System Voltage Improvement

Authors: Sabir Messalti, Bilal Boudjellal, Azouz Said

Abstract:

In this paper, power system Voltage improvement using wind turbine is presented. Two controllers are used: a PI controller and Artificial Neural Networks (ANN) controllers are studied to control of the power flow exchanged between the wind turbine and the power system in order to improve the bus voltage. The wind turbine is based on a doubly-fed induction generator (DFIG) controlled by field-oriented control. Indirect control is used to control of the reactive power flow exchanged between the DFIG and the power system. The proposed controllers are tested on power system for large voltage disturbances.

Keywords: artificial neural networks controller, DFIG, field-oriented control, PI controller, power system voltage improvement

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6136 Voltage Problem Location Classification Using Performance of Least Squares Support Vector Machine LS-SVM and Learning Vector Quantization LVQ

Authors: M. Khaled Abduesslam, Mohammed Ali, Basher H. Alsdai, Muhammad Nizam Inayati

Abstract:

This paper presents the voltage problem location classification using performance of Least Squares Support Vector Machine (LS-SVM) and Learning Vector Quantization (LVQ) in electrical power system for proper voltage problem location implemented by IEEE 39 bus New-England. The data was collected from the time domain simulation by using Power System Analysis Toolbox (PSAT). Outputs from simulation data such as voltage, phase angle, real power and reactive power were taken as input to estimate voltage stability at particular buses based on Power Transfer Stability Index (PTSI).The simulation data was carried out on the IEEE 39 bus test system by considering load bus increased on the system. To verify of the proposed LS-SVM its performance was compared to Learning Vector Quantization (LVQ). The results showed that LS-SVM is faster and better as compared to LVQ. The results also demonstrated that the LS-SVM was estimated by 0% misclassification whereas LVQ had 7.69% misclassification.

Keywords: IEEE 39 bus, least squares support vector machine, learning vector quantization, voltage collapse

Procedia PDF Downloads 416
6135 A Review on Bearing Capacity Factor Nγ of Foundations with Different Shapes

Authors: R. Ziaie Moayed, S. Taghvamanesh

Abstract:

So far several methods by different researchers have been developed in order to calculate the bearing capacity factors of foundations and retaining walls. In this paper, the bearing capacity factor Ny (shape factor) for different types of foundation have been investigated. The formula for bearing capacity on c–φ–γ soil can still be expressed by Terzaghi’s equation except that the bearing capacity factor Ny depends on the surcharge ratio, and friction angle φ. Many empirical definitions have been used for measurement of the bearing capacity factors N

Keywords: bearing capacity, bearing capacity factor Nγ, irregular foundations, shape factor

Procedia PDF Downloads 113
6134 Impact of Series Reactive Compensation on Increasing a Distribution Network Distributed Generation Hosting Capacity

Authors: Moataz Ammar, Ahdab Elmorshedy

Abstract:

The distributed generation hosting capacity of a distribution network is typically limited at a given connection point by the upper voltage limit that can be violated due to the injection of active power into the distribution network. The upper voltage limit violation concern becomes more important as the network equivalent resistance increases with respect to its equivalent reactance. This paper investigates the impact of modifying the distribution network equivalent reactance at the point of connection such that the upper voltage limit is violated at a higher distributed generation penetration, than it would without the addition of series reactive compensation. The results show that series reactive compensation proves efficient in certain situations (based on the ratio of equivalent network reactance to equivalent network resistance at the point of connection). As opposed to the conventional case of capacitive compensation of a distribution network to reduce voltage drop, inductive compensation is seen to be more appropriate for alleviation of distributed-generation-induced voltage rise.

Keywords: distributed generation, distribution networks, series compensation, voltage rise

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6133 Flashover Voltage of Silicone Insulating Surface Covered by Water Drops under AC Voltage

Authors: Fatiha Aouabed, Abdelhafid Bayadi, Rabah Boudissa

Abstract:

Nowadays, silicone rubber insulation materials are widely used in high voltage outdoor insulation systems as they can combat pollution flashover problems. The difference in pollution flashover performance of silicone rubber and other insulating materials is due to the way that water wets their surfaces. It resides as discrete drops on silicone rubber, and the mechanism of flashover is due to the breakdown of the air between the water drops and the distortion of these drops in the direction of the electric field which brings the insulation to degradation and failure. The main objective of this work is to quantify the effect of different types of water drops arrangements, their position and dry bands width on the flashover voltage of the silicone insulating surface with non-uniform electric field systems. The tests were carried out on a rectangular sample under AC voltage. A rod-rod electrode system is used. The findings of this work indicate that the performance of the samples decreases with the presence of water drops on their surfaces. Further, these experimental findings show that there is a limiting number of rows from which the flashover voltage of the insulation is minimal and constant. This minimum is a function of the distance between two successive rows. Finally, it is concluded that the system withstand voltage increases when the row of droplets on the electrode axis is removed.

Keywords: contamination, flashover, testing, silicone rubber insulators, surface wettability, water droplets

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6132 Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast

Authors: Yiqiang Ni, Xuanlong Chen, Enliang Li, Linting Zheng, Shizheng Yang

Abstract:

Bipolar ICs are playing an important role in military applications, mainly used in logic gates, such as inverter and NAND gate. The defect of metal break located on the step is one of the main failure mechanisms of bipolar ICs, resulting in open-circuit or functional failure. In this situation, general failure localization methods like optical beam-induced resistance change (OBIRCH) and photon emission microscopy (PEM) might not be fully effective. However, active voltage contrast (AVC) can be used as a voltage probe, which may pinpoint the incorrect potential and thus locate the failure position. Two case studies will be present in this paper on how to implement AVC for failure localization, and the detailed failure mechanism will be discussed.

Keywords: bipolar IC, failure localization, metal break, open failure, voltage contrast

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6131 Voltage Sag Characteristics during Symmetrical and Asymmetrical Faults

Authors: Ioannis Binas, Marios Moschakis

Abstract:

Electrical faults in transmission and distribution networks can have great impact on the electrical equipment used. Fault effects depend on the characteristics of the fault as well as the network itself. It is important to anticipate the network’s behavior during faults when planning a new equipment installation, as well as troubleshooting. Moreover, working backwards, we could be able to estimate the characteristics of the fault when checking the perceived effects. Different transformer winding connections dominantly used in the Greek power transfer and distribution networks and the effects of 1-phase to neutral, phase-to-phase, 2-phases to neutral and 3-phase faults on different locations of the network were simulated in order to present voltage sag characteristics. The study was performed on a generic network with three steps down transformers on two voltage level buses (one 150 kV/20 kV transformer and two 20 kV/0.4 kV). We found that during faults, there are significant changes both on voltage magnitudes and on phase angles. The simulations and short-circuit analysis were performed using the PSCAD simulation package. This paper presents voltage characteristics calculated for the simulated network, with different approaches on the transformer winding connections during symmetrical and asymmetrical faults on various locations.

Keywords: Phase angle shift, power quality, transformer winding connections, voltage sag propagation

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6130 Harmonic Analysis to Improve Power Quality

Authors: Rumana Ali

Abstract:

The presence of nonlinear and power electronic switching devices produce distorted output and harmonics into the system. This paper presents a technique to analyze harmonics using digital series oscilloscope (DSO). In power distribution system further measurements are done by DSO, and the waveforms are analyzed using FFT program. The results of this proposed work are helpful for the investigator to install an appropriate compensating device to mitigate the harmonics, in turn, improve the power quality. This case study is carried out at AIT Chikmagalur. It is done as a starting step towards the improvement of energy efficiency at AIT Chikmagalur, and with an overall aim of reducing the electricity bill with a complete energy audit of the institution. Strategies were put forth to reach the above objective: The following strategies were proposed to be implemented to analyze the power quality in EEE department of the institution. Strategy 1: The power factor has to be measured using the energy meter. Power factor improvement may reduce the voltage drop in lines. This brings the voltages at the socket in the labs closer to the nominal voltage of 230V, and thus power quality improves. Strategy 2: The harmonics at the power inlet has to be measured by means of a DSO. The DSO waveform is analyzed using FFT to know the percentage harmonic up to the 13th harmonics of 50Hz. Reduction in the harmonics in the inlet of the EEE department may reduce line losses and therefore reduces energy bill to the institution.

Keywords: harmonic analysis, energy bill, power quality, electronic switching devices

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6129 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter

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6128 Design and Development of Compact 1KW Floating Battery Discharge Regulator

Authors: A. Sreedevi, G. Anantaramu

Abstract:

The present space research organizations are striving towards the development of lighter, smaller, more efficient, low cost, and highly reliable power supply. Switch mode power supplies (SMPS) overcome the demerits of linear power supplies such as low efficiency, difficulties in thermal management, and in boosting the output voltage. Space applications require a constant DC voltage to supply its load. As the load varies, the battery terminal voltage tends to vary accordingly. To avoid this variation in the load terminal voltage, a DC-DC regulator is required. The conventional regulator for space applications is isolated boost topology. The proposed topology uses an interleaved push-pull converter with a current doubler secondary to reduce the EMI issues and increase efficiency. The proposed topology uses a floating technique where the converter derives power from the battery and generates only the voltage that is required to fill the gap between the bus and the battery voltage. The direct voltage sense and current loop provide tight regulation of output and better stability. Converter is designed with 50 kHz switching frequency using UC 1825 PWM controller employing both voltage and peak current mode control. Experimental tests have been carried out on the converter under different input and load conditions to validate the design. The experimental results showed that the efficiency was greater than 91%. Stability analysis is done using venable stability analyzer.

Keywords: push pull converter, current doubler, converter, PWM control

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6127 An Improved Cuckoo Search Algorithm for Voltage Stability Enhancement in Power Transmission Networks

Authors: Reza Sirjani, Nobosse Tafem Bolan

Abstract:

Many optimization techniques available in the literature have been developed in order to solve the problem of voltage stability enhancement in power systems. However, there are a number of drawbacks in the use of previous techniques aimed at determining the optimal location and size of reactive compensators in a network. In this paper, an Improved Cuckoo Search algorithm is applied as an appropriate optimization algorithm to determine the optimum location and size of a Static Var Compensator (SVC) in a transmission network. The main objectives are voltage stability improvement and total cost minimization. The results of the presented technique are then compared with other available optimization techniques.

Keywords: cuckoo search algorithm, optimization, power system, var compensators, voltage stability

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6126 A Test Methodology to Measure the Open-Loop Voltage Gain of an Operational Amplifier

Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device Under Test (DUT), open loop voltage gain, operational amplifier, test circuit

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6125 Investigation of Factors Affecting the Total Ionizing Dose Threshold of Electrically Erasable Read Only Memories for Use in Dose Rate Measurement

Authors: Liqian Li, Yu Liu, Karen Colins

Abstract:

The dose rate present in a seriously contaminated area can be indirectly determined by monitoring radiation damage to inexpensive commercial electronics, instead of deploying expensive radiation hardened sensors. EEPROMs (Electrically Erasable Read Only Memories) are a good candidate for this purpose because they are inexpensive and are sensitive to radiation exposure. When the total ionizing dose threshold is reached, an EEPROM chip will show signs of damage that can be monitored and transmitted by less susceptible electronics. The dose rate can then be determined from the known threshold dose and the exposure time, assuming the radiation field remains constant with time. Therefore, the threshold dose needs to be well understood before this method can be used. There are many factors affecting the threshold dose, such as the gamma ray energy spectrum, the operating voltage, etc. The purpose of this study was to experimentally determine how the threshold dose depends on dose rate, temperature, voltage, and duty factor. It was found that the duty factor has the strongest effect on the total ionizing dose threshold, while the effect of the other three factors that were investigated is less significant. The effect of temperature was found to be opposite to that expected to result from annealing and is yet to be understood.

Keywords: EEPROM, ionizing radiation, radiation effects on electronics, total ionizing dose, wireless sensor networks

Procedia PDF Downloads 151
6124 Air Breakdown Voltage Prediction in Post-arcing Conditions for Compact Circuit Breakers

Authors: Jing Nan

Abstract:

The air breakdown voltage in compact circuit breakers is a critical factor in the design and reliability of electrical distribution systems. This voltage determines the threshold at which the air insulation between conductors will fail or 'break down,' leading to an arc. This phenomenon is highly sensitive to the conditions within the breaker, such as the temperature and the distance between electrodes. Typically, air breakdown voltage models have been reliable for predicting failure under standard operational temperatures. However, in conditions post-arcing, where temperatures can soar above 2000K, these models face challenges due to the complex physics of ionization and electron behaviour at such high-energy states. Building upon the foundational understanding that the breakdown mechanism is initiated by free electrons and propelled by electric fields, which lead to ionization and, potentially, to avalanche or streamer formation, we acknowledge the complexity introduced by high-temperature environments. Recognizing the limitations of existing experimental data, a notable research gap exists in the accurate prediction of breakdown voltage at elevated temperatures, typically observed post-arcing, where temperatures exceed 2000K.To bridge this knowledge gap, we present a method that integrates gap distance and high-temperature effects into air breakdown voltage assessment. The proposed model is grounded in the physics of ionization, accounting for the dynamic behaviour of free electrons which, under intense electric fields at elevated temperatures, lead to thermal ionization and potentially reach the threshold for streamer formation as Meek's criterion. Employing the Saha equation, our model calculates equilibrium electron densities, adapting to the atmospheric pressure and the hot temperature regions indicative of post-arc temperature conditions. Our model is rigorously validated against established experimental data, demonstrating substantial improvements in predicting air breakdown voltage in the high-temperature regime. This work significantly improves the predictive power for air breakdown voltage under conditions that closely mimic operational stressors in compact circuit breakers. Looking ahead, the proposed methods are poised for further exploration in alternative insulating media, like SF6, enhancing the model's utility for a broader range of insulation technologies and contributing to the future of high-temperature electrical insulation research.

Keywords: air breakdown voltage, high-temperature insulation, compact circuit breakers, electrical discharge, saha equation

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6123 Power Quality Audit Using Fluke Analyzer

Authors: N. Ravikumar, S. Krishnan, B. Yokeshkumar

Abstract:

In present days, the power quality issues are increases due to non-linear loads like fridge, AC, washing machines, induction motor, etc. This power quality issues will affects the output voltages, output current, and output power of the total performance of the generator. This paper explains how to test the generator using the Fluke 435 II series power quality analyser. This Fluke 435 II series power quality analyser is used to measure the voltage, current, power, energy, total harmonic distortion (THD), current harmonics, voltage harmonics, power factor, and frequency. The Fluke 435 II series power quality analyser have several advantages. They are i) it will records output in analog and digital format. ii) the fluke analyzer will records at every 0.25 sec. iii) it will also measure all the electrical parameter at a time.

Keywords: THD, harmonics, power quality, TNEB, Fluke 435

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6122 Designing and Simulation of a CMOS Square Root Analog Multiplier

Authors: Milad Kaboli

Abstract:

A new CMOS low voltage current-mode four-quadrant analog multiplier based on the squarer circuit with voltage output is presented. The proposed circuit is composed of a pair of current subtractors, a pair differential-input V-I converters and a pair of voltage squarers. The circuit was simulated using HSPICE simulator in standard 0.18 μm CMOS level 49 MOSIS (BSIM3 V3.2 SPICE-based). Simulation results show the performance of the proposed circuit and experimental results are given to confirm the operation. This topology of multiplier results in a high-frequency capability with low power consumption. The multiplier operates for a power supply ±1.2V. The simulation results of analog multiplier demonstrate a THD of 0.65% in 10MHz, a −3dB bandwidth of 1.39GHz, and a maximum power consumption of 7.1mW.

Keywords: analog processing circuit, WTA, LTA, low voltage

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6121 Estimation of Mobility Parameters and Threshold Voltage of an Organic Thin Film Transistor Using an Asymmetric Capacitive Test Structure

Authors: Rajesh Agarwal

Abstract:

Carrier mobility at the organic/insulator interface is essential to the performance of organic thin film transistors (OTFT). The present work describes estimation of field dependent mobility (FDM) parameters and the threshold voltage of an OTFT using a simple, easy to fabricate two terminal asymmetric capacitive test structure using admittance measurements. Conventionally, transfer characteristics are used to estimate the threshold voltage in an OTFT with field independent mobility (FIDM). Yet, this technique breaks down to give accurate results for devices with high contact resistance and having field dependent mobility. In this work, a new technique is presented for characterization of long channel organic capacitor (LCOC). The proposed technique helps in the accurate estimation of mobility enhancement factor (γ), the threshold voltage (V_th) and band mobility (µ₀) using capacitance-voltage (C-V) measurement in OTFT. This technique also helps to get rid of making short channel OTFT or metal-insulator-metal (MIM) structures for making C-V measurements. To understand the behavior of devices and ease of analysis, transmission line compact model is developed. The 2-D numerical simulation was carried out to illustrate the correctness of the model. Results show that proposed technique estimates device parameters accurately even in the presence of contact resistance and field dependent mobility. Pentacene/Poly (4-vinyl phenol) based top contact bottom-gate OTFT’s are fabricated to illustrate the operation and advantages of the proposed technique. Small signal of frequency varying from 1 kHz to 5 kHz and gate potential ranging from +40 V to -40 V have been applied to the devices for measurement.

Keywords: capacitance, mobility, organic, thin film transistor

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6120 Analysis and Design of Simultaneous Dual Band Harvesting System with Enhanced Efficiency

Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

Abstract:

This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce Vth of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm

Procedia PDF Downloads 374
6119 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation

Procedia PDF Downloads 250
6118 Transient Signal Generator For Fault Indicator Testing

Authors: Mohamed Shaban, Ali Alfallah

Abstract:

This paper describes an application for testing of a fault indicator but it could be used for other network protection testing. The application is created in the LabVIEW environment and consists of three parts. The first part of the application is determined for transient phenomenon generation and imitates voltage and current transient signal at ground fault originate. The second part allows to set sequences of trend for each current and voltage output signal, up to six trends for each phase. The last part of the application generates harmonic signal with continuously controllable amplitude of current or voltage output signal and phase shift of each signal can be changed there. Further any sub-harmonics and upper harmonics can be added to selected current output signal

Keywords: signal generator-fault indicator, harmonic signal generator, voltage output

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6117 Control Technique for Single Phase Bipolar H-Bridge Inverter Connected to the Grid

Authors: L. Hassaine, A. Mraoui, M. R. Bengourina

Abstract:

In photovoltaic system, connected to the grid, the main goal is to control the power that the inverter injects into the grid from the energy provided by the photovoltaic generator. This paper proposes a control technique for a photovoltaic system connected to the grid based on the digital pulse-width modulation (DSPWM) which can synchronise a sinusoidal current output with a grid voltage and generate power at unity power factor. This control is based on H-Bridge inverter controlled by bipolar PWM Switching. The electrical scheme of the system is presented. Simulations results of output voltage and current validate the impact of this method to determinate the appropriate control of the system. A digital design of a generator PWM using VHDL is proposed and implemented on a Xilinx FPGA.

Keywords: grid connected photovoltaic system, H-Bridge inverter, control, bipolar PWM

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6116 Review on Low Actuation Voltage RF Mems Switches

Authors: Hassan Saffari;, Reza Askari Moghadam

Abstract:

In modern communication systems, it is highly demanded to achieve high performance with minimal power consumption. Low actuation voltage RF MEMS (Micro-Electro-Mechanical Systems) switches represent a significant advancement in this regard. These switches, with their ability to operate at lower voltages, offer promising solutions for enhancing connectivity while minimizing energy consumption. Microelectromechanical switches are good alternatives for electronic and mechanical switches due to their low insertion loss, high isolation, and fast switching speeds. They have attracted more attention in recent years. Most of the presented RF MEMS switches use electrostatic actuators due to their low power consumption. Low actuation voltage RF MEMS switches are among the important issues that have been investigated in research articles. The actuation voltage can be reduced by different methods. One usually implemented method is low spring constant structures. However, despite their numerous benefits, challenges remain in the widespread adoption of low-actuation voltage RF MEMS switches. Issues related to reliability, durability, and manufacturing scalability need to be addressed to realize their full potential in commercial applications. While overcoming certain challenges, their exceptional performance characteristics and compatibility with miniaturized electronic systems make them a promising choice for next-generation wireless communication and RF applications. In this paper, some previous works that proposed low-voltage actuation RF MEMS switches are investigated and analyzed.

Keywords: RF MEMS switches, low actuation voltage, small spring constant structures, electrostatic actuation

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