Search results for: dielectric breakdown

Authors: Ciara Pienaar, J. W. Odendaal, J. Joubert, J. C. Smit

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Radar cross section (RCS) of dielectric objects play an important role in many applications, such as low observability technology development, drone detection, and monitoring as well as coastal surveillance. Various materials are used to construct the targets of interest such as metal, wood, composite materials, radar absorbent materials, and other dielectrics. Since simulated datasets are increasingly being used to supplement infield measurements, as it is more cost effective and a larger variety of targets can be simulated, it is important to have a high level of confidence in the predicted results. Confidence can be attained through validation. Various computational electromagnetic (CEM) methods are capable of predicting the RCS of dielectric targets. This study will extend previous studies by validating full-wave and asymptotic RCS simulations of dielectric targets with measured data. The paper will provide measured RCS data of a number of canonical dielectric targets exhibiting different material properties. As stated previously, these measurements are used to validate numerous CEM methods. The dielectric properties are accurately characterized to reduce the uncertainties in the simulations. Finally, an analysis of the sensitivity of oblique and normal incidence scattering predictions to material characteristics is also presented. In this paper, the ability of several CEM methods, including method of moments (MoM), and physical optics (PO), to calculate the RCS of dielectrics were validated with measured data. A few dielectrics, exhibiting different material properties, were selected and several canonical targets, such as flat plates and cylinders, were manufactured. The RCS of these dielectric targets were measured in a compact range at the University of Pretoria, South Africa, over a frequency range of 2 to 18 GHz and a 360° azimuth angle sweep. This study also investigated the effect of slight variations in the material properties on the calculated RCS results, by varying the material properties within a realistic tolerance range and comparing the calculated RCS results. Interesting measured and simulated results have been obtained. Large discrepancies were observed between the different methods as well as the measured data. It was also observed that the accuracy of the RCS data of the dielectrics can be frequency and angle dependent. The simulated RCS for some of these materials also exhibit high sensitivity to variations in the material properties. Comparison graphs between the measured and simulation RCS datasets will be presented and the validation thereof will be discussed. Finally, the effect that small tolerances in the material properties have on the calculated RCS results will be shown. Thus the importance of accurate dielectric material properties for validation purposes will be discussed.

Keywords: asymptotic, CEM, dielectric scattering, full-wave, measurements, radar cross section, validation

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Authors: Chyuan Haur Kao, Hsiang Chen, Yu Sheng Tsai, Chen Hao Hung, Yu Shan Lee

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Dielectric electrolyte-insulator-semiconductor sensing membranes-based biosensors have been intensively investigated because of their simple fabrication, low cost, and fast response. However, to enhance their sensing performance, it is worthwhile to explore alternative materials, distinct processes, and novel treatments. An ISFET can be viewed as a variation of MOSFET with the dielectric oxide layer as the sensing membrane. Then, modulation on the work function of the gate caused by electrolytes in various ion concentrations could be used to calculate the ion concentrations. Recently, owing to the advancement of CMOS technology, some high dielectric materials substrates as the sensing membranes of electrolyte-insulator-semiconductor (EIS) structures. The EIS with a stacked-layer of SiO₂ layer between the sensing membrane and the silicon substrate exhibited a high pH sensitivity and good long-term stability. IGZO is a wide-bandgap (~3.15eV) semiconductor of the III-VI semiconductor group with several preferable properties, including good transparency, high electron mobility, wide band gap, and comparable with CMOS technology. IGZO was sputtered by reactive radio frequency (RF) on a p-type silicon wafer with various gas ratios of Ar:O₂ and was treated with rapid thermal annealing in O₂ ambient. The sensing performance, including sensitivity, hysteresis, and drift rate was measured and XRD, XPS, and AFM analyses were also used to study the material properties of the IGZO membrane. Moreover, IGZO was used as a sensing membrane in dielectric EIS bio-sensor structures. In addition to traditional pH sensing capability, detection for concentrations of Na+, K+, urea, glucose, and creatinine was performed. Moreover, post rapid thermal annealing (RTA) treatment was confirmed to improve the material properties and enhance the multi-analyte sensing capability for various ions or chemicals in solutions. In this study, the IGZO sensing membrane with annealing in O₂ ambient exhibited a higher sensitivity, higher linearity, higher H+ selectivity, lower hysteresis voltage and lower drift rate. Results indicate that the IGZO dielectric sensing membrane on the EIS structure is promising for future bio-medical device applications.

Keywords: dielectric sensing membrane, IGZO, hydrogen ion, plasma, rapid thermal annealing

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Authors: Abdelaziz Rabhi, Mohamed Amrani, Abderrazek Ziane, Nabil Belkadi, Abdelraouf Hocini

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In this paper, a bedimensional simulation program of the electric characteristics of reverse biased lateral polysilicon PIN diode is presented. In this case we have numerically solved the system of partial differential equations formed by Poisson's equation and both continuity equations that take into account the effect of impact ionization. Therefore we will obtain the current-voltage characteristics (I-V) of the reverse-biased structure which may include the effect of breakdown.The geometrical model assumes that the polysilicon layer is composed by a succession of defined mean grain size crystallites, separated by lateral grain boundaries which are parallel to the metallurgic junction.

Keywords: breakdown, polycrystalline silicon, PIN, grain, impact ionization

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Authors: Qing Liu, Jean-fabien Capsal, Claude Richard

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In this current contribution, authors are dedicated to investigate influence of the crystal lamellae orientation on electromechanical behaviors of relaxor ferroelectric Poly (vinylidene fluoride –trifluoroethylene -chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) films by control of polymer microstructure, aiming to picture the full map of structure-property relationship. In order to define their crystal orientation films, terpolymer films were fabricated by solution-casting, stretching and hot-pressing process. Differential scanning calorimetry, impedance analyzer, and tensile strength techniques were employed to characterize crystallographic parameters, dielectric permittivity, and elastic Young’s modulus respectively. In addition, large electrical induced out-of-plane electrostrictive strain was obtained by cantilever beam mode. Consequently, as-casted pristine films exhibited surprisingly high electrostrictive strain 0.1774% due to considerably small value of elastic Young’s modulus although relatively low dielectric permittivity. Such reasons contributed to large mechanical elastic energy density. Instead, due to 2 folds increase of elastic Young’s modulus and less than 50% augmentation of dielectric constant, fully-crystallized film showed weak electrostrictive behavior and mechanical energy density as well. And subjected to mechanical stretching process, Film C exhibited stronger dielectric constant and out-performed electrostrictive strain over Film B because edge-on crystal lamellae orientation induced by uniaxially mechanical stretch. Hot-press films were compared in term of cooling rate. Rather large electrostrictive strain of 0.2788% for hot-pressed Film D in quenching process was observed although its dielectric permittivity equivalent to that of pristine as-casted Film A, showing highest mechanical elastic energy density value of 359.5 J/m^3. In hot-press cooling process, dielectric permittivity of Film E saw values at 48.8 concomitant with ca.100% increase of Young’s modulus. Films with intermediate mechanical energy density were obtained.

Keywords: crystal orientation, electrostroctive strain, mechanical energy density, permittivity, relaxor ferroelectric

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Authors: Porag Jyoti Ligira, Gargi Khanna

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The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

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Authors: Dong-Ho Kim, Su-Sang Lim, Sang-Won Han, Chang-Taek Hyun

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In the construction site, the cost and schedules are the most important management elements. Despite efforts to integrated management the cost and schedule, WBS classification is struggling to differ from each other. The cost and schedule can be integrated and can be managed due to the characteristic of the detail system in the case of Korea around the axis of pressure and official fixture system. In this research, the Work Breakdown Structure (WBS) integrating the cost and schedules around in government office construction, WBS which can be used in common was presented in order to analyze the detail system of the public institution construction and improve. As to this method, the efficient administration of not only the link application of the cost and schedule but also construction project is expected.

Keywords: WBS, EVMS, integrated cost and schedule, Korea case

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Authors: Gulshan Mammadova

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This paper presents the results of studying the surface microrelief in 2D and 3D models and analyzing the spectroscopy of a three-junction TlInSe₂ crystal. Analysis of the results obtained showed that with a change in the composition of the TlInSe₂ crystal, sharp changes occur in the microrelief of its surface. An X-ray optical diffraction analysis of the TlInSe₂ crystal was experimentally carried out. Based on ellipsometric data, optical functions were determined - the real and imaginary parts of the dielectric permittivity of crystals, the coefficients of optical absorption and reflection, the dependence of energy losses and electric field power on the effective density, the spectral dependences of the real (σᵣ) and imaginary (σᵢ) parts, optical electrical conductivity were experimentally studied. The fluorescence spectra of the ternary compound TlInSe₂ were isolated and analyzed when excited by light with a wavelength of 532 nm. X-ray studies of TlInSe₂ showed that this phase crystallizes into tetragonal systems. Ellipsometric measurements showed that the real (ε₁) and imaginary (ε₂) parts of the dielectric constant are components of the dielectric constant tensor of the uniaxial joints under consideration and do not depend on the angle. Analysis of the dependence of the real and imaginary parts of the refractive index of the TlInSe₂ crystal on photon energy showed that the nature of the change in the real and imaginary parts of the dielectric constant does not differ significantly. When analyzing the spectral dependences of the real (σr) and imaginary (σi) parts of the optical electrical conductivity, it was noticed that the real part of the optical electrical conductivity increases exponentially in the energy range 0.894-3.505 eV. In the energy range of 0.654-2.91 eV, the imaginary part of the optical electrical conductivity increases linearly, reaches a maximum value, and decreases at an energy of 2.91 eV. At 3.6 eV, an inversion of the imaginary part of the optical electrical conductivity of the TlInSe₂ compound is observed. From the graphs of the effective power density versus electric field energy losses, it is known that the effective power density increases significantly in the energy range of 0.805–3.52 eV. The fluorescence spectrum of the ternary compound TlInSe₂ upon excitation with light with a wavelength of 532 nm has been studied and it has been established that this phase has luminescent properties.

Keywords: optical properties, dielectric permittivity, real and imaginary dielectric permittivity, optical electrical conductivity

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Authors: Nouh Zeggai, Lucas Debrux, Fabien Parrain, Brahim Dkhil, Martino Lobue, Morgan Almanza

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Refrigeration and air conditioning are some of the most used energies in our daily life, especially vapor compression refrigeration. Electrocaloric material might appears as an alternative towards solid-state cooling. polyvinylidene fluoride (PVDF) based polymer has shown promising adiabatic temperature change (∆T) and entropy change (∆S). There is practically no limit to the electric field that can be applied, except the one that the material can withstand. However, when working with a large surface as required in a device, the chance to have a defect is larger and can drastically reduce the voltage breakdown, thus reducing the electrocaloric properties. In this work, we propose to study how the characteristic of a single film are transposed when going to multilayer. The laminator and the hot press appear as two interesting processes that have been investigating to achieve a multilayer film. The study is mainly focused on the breakdown field and the adiabatic temperature change, but the phase and crystallinity have also been measured. We process one layer-based PVDF and assemble them to obtain a multilayer. Pressing at hot temperature method and lamination were used for the production of the thin films. The multilayer film shows higher breakdown strength, temperature change, and crystallinity (beta phases) using the hot press technique.

Keywords: PVDF-TrFE-CFE, multilayer, electrocaloric effect, hot press, cooling device

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Authors: Himanshu J. Bahirat, Apoorva S. Janawlekar

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Plasma actuators are essential for aerodynamic flow separation control due to their lack of mechanical parts, lightweight, and high response frequency, which have numerous applications in hypersonic or supersonic aircraft. The working of these actuators is based on the formation of a low-temperature plasma between a pair of parallel electrodes by the application of a high-voltage AC signal across the electrodes, after which air molecules from the air surrounding the electrodes are ionized and accelerated through the electric field. The high-frequency operation is required in dielectric discharge barriers to ensure plasma stability. To carry out flow separation control in a hypersonic flow, the optimal design and construction of a power supply to generate dielectric barrier discharges is carried out in this paper. In this paper, it is aspired to construct a simplified circuit topology to emulate the dielectric barrier discharge and study its various frequency responses. The power supply can generate high voltage pulses up to 20kV at the repetitive frequency range of 20-50kHz with an input power of 500W. The power supply has been designed to be short circuit proof and can endure variable plasma load conditions. Its general outline is to charge a capacitor through a half-bridge converter and then later discharge it through a step-up transformer at a high frequency in order to generate high voltage pulses. After simulating the circuit, the PCB design and, eventually, lab tests are carried out to study its effectiveness in controlling flow separation.

Keywords: aircraft propulsion, dielectric barrier discharge, flow separation control, power source

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Authors: Ramovatar, Neeraj Panwar

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Lead free Ba₀.₉₈Ca₀.₀₂SnxTi₁₋ₓO₃ (x = 0.01 and 0.05 mole %) ferroelectric ceramics have been synthesized by the solid-state reaction method with sintering at 1400 °C for 2 h. The room temperature x-ray diffraction (XRD) patterns identified the tetragonal phase for x = 0.01 composition whereas co-existence of tetragonal and orthorhombic phases for x =0.05 composition. Raman spectroscopy results corroborated with the XRD results at room temperature. The maximum dielectric properties (ɛm ~ 8591, tanδ ~ 0.018) were obtained for the compound with x = 0.01 at 5 kHz. Further, the tetragonal to cubic (TC) transition temperature was observed at 122 °C and 102 °C for the ceramics with x =0.01 and x = 0.05, respectively. The temperature dependent P-E loops also revealed the existence of TC at these particular temperature values. The energy storage density (Ed) of both compounds was calculated from room temperature P – E loops at an applied electric field of 20 kV/cm. The maximum Ed ~ 224 kJ/m³ was achieved for the sample with x = 0.01 as compared to 164 kJ/m³ for the x =0.05 composition. The value of Ed is comparable to other BaTiO₃ based lead free ferroelectric systems. Impedance spectroscopy analysis exhibited the bulk and grain boundary contributions above 300 °C under the frequency range 100 Hz to 1 MHz. The above properties make these ceramics suitable for energy storage devices.

Keywords: dielectric properties, energy storage properties, impedance spectroscopy, lead free ceramics

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Authors: H. Ben Khlifa, W. Cheikhrouhou, R. M'nassri

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The Orthorhombic Pr0.8Na0.2MnO3 ceramic was prepared in Polycrystalline form by a Pechini sol–gel method and its structural, magnetic, electrical, and dielectric properties were investigated experimentally. A structural study confirms that the sample is a single phase. Magnetic measurements show that the sample is a charge ordered Manganite. The sample undergoes two successive magnetic phase transitions with the variation of temperature: a charge ordering transition occurred at TCO = 212 K followed by a Paramagnetic (PM) to ferromagnetic (FM) transition around TC = 115 K. From an electrical point of view, a saturation region was marked in the conductivity as a function of Temperature s(T) curves at a specific temperature. The dc-conductivity (sdc) reaches a maximum value at 240 K. The obtained results are in good agreement with the temperature dependence of the average normalized change (ANC). We found that the conduction mechanism was governed by small polaron hopping (SPH) in the high-temperature region and by variable range hopping (VRH) in the low-temperature region. Complex impedance analysis indicates the presence of a non-Debye relaxation phenomenon in the system. Also, the compound was modeled by an electrical equivalent circuit. Then, the contribution of the grain boundary in the transport properties was confirmed.

Keywords: manganites, preparation methods, magnetization, magnetocaloric effect, electrical and dielectric

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Authors: Henok Hailemariam, Frank Wuttke

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Collapsible soils are weak soils that appear to be stable in their natural state, normally dry condition, but rapidly deform under saturation (wetting), thus generating large and unexpected settlements which often yield disastrous consequences for structures unwittingly built on such deposits. In this study, a prediction model for the relative subsidence of stressed collapsible soils based on dielectric permittivity measurement is presented. Unlike most existing methods for soil subsidence prediction, this model does not require moisture content as an input parameter, thus providing the opportunity to obtain accurate estimation of the relative subsidence of collapsible soils using dielectric measurement only. The prediction model is developed based on an existing relative subsidence prediction model (which is dependent on soil moisture condition) and an advanced theoretical frequency and temperature-dependent electromagnetic mixing equation (which effectively removes the moisture content dependence of the original relative subsidence prediction model). For large scale sub-surface soil exploration purposes, the spatial sub-surface soil dielectric data over wide areas and high depths of weak (collapsible) soil deposits can be obtained using non-destructive high frequency electromagnetic (HF-EM) measurement techniques such as ground penetrating radar (GPR). For laboratory or small scale in-situ measurements, techniques such as an open-ended coaxial line with widely applicable time domain reflectometry (TDR) or vector network analysers (VNAs) are usually employed to obtain the soil dielectric data. By using soil dielectric data obtained from small or large scale non-destructive HF-EM investigations, the new model can effectively predict the relative subsidence of weak soils without the need to extract samples for moisture content measurement. Some of the resulting benefits are the preservation of the undisturbed nature of the soil as well as a reduction in the investigation costs and analysis time in the identification of weak (problematic) soils. The accuracy of prediction of the presented model is assessed by conducting relative subsidence tests on a collapsible soil at various initial soil conditions and a good match between the model prediction and experimental results is obtained.

Keywords: collapsible soil, dielectric permittivity, moisture content, relative subsidence

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Authors: Kashif Habib, Zeeshan Ayyub

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ZnO voltage dependent resistor was widely used as components of the electrical system for over-voltage protection. It has a wide application prospect in superconducting energy-removal, generator de-excitation, overvoltage protection of electrical & electronics equipment. At present, the research for the application of ZnO voltage dependent resistor stop, it uses just in the field of its nonlinear voltage current characteristic and overvoltage protection areas. There is no further study over the over-voltage breakdown characteristics, such as the combustion phenomena and the measure of the voltage/current when it breakdown, and the affect to its surrounding equipment. It is also a blind spot in its application. So, when we do the feature test of ZnO voltage dependent resistor, we need to design a reasonable test power supply, making the terminal voltage keep for sine wave, simulating the real use of PF voltage in power supply conditions. We put forward the solutions of using inverter to generate a controllable power. The paper mainly focuses on the breakdown characteristic test power supply of nonlinear ZnO voltage dependent resistor. According to the current mature switching power supply technology, we proposed power control system using the inverter as the core. The power mainly realize the sin-voltage output on the condition of three-phase PF-AC input, and 3 control modes (RMS, Peak, Average) of the current output. We choose TMS320F2812M as the control part of the hardware platform. It is used to convert the power from three-phase to a controlled single-phase sin-voltage through a rectifier, filter, and inverter. Design controller produce SPWM, to get the controlled voltage source via appropriate multi-loop control strategy, while execute data acquisition and display, system protection, start logic control, etc. The TMS320F2812M is able to complete the multi-loop control quickly and can be a good completion of the inverter output control.

Keywords: ZnO, multi-loop control, SPWM, non-linear load

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Authors: Chongtham Jiten, K. Chandramani Singh, Radhapiyari Laishram

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Nanocrystalline powders of the lead-free piezoelectric material, tantalum-substituted potassium sodium niobate (K0.5Na0.5)(Nb0.9Ta0.1)O3 (KNNT), were produced using a Retsch PM100 planetary ball mill by setting the milling time to 15h, 20h, 25h, 30h, 35h and 40h, at a fixed speed of 250rpm. The average particle size of the milled powders was found to decrease from 12nm to 3nm as the milling time increases from 15h to 25h, which is in agreement with the existing theoretical model. An anomalous increase to 98nm and then a drop to 3nm in the particle size were observed as the milling time further increases to 30h and 40h respectively. Various sizes of these starting KNNT powders were used to investigate the effect of milling time on the microstructure, dielectric properties, phase transitions and piezoelectric properties of the resulting KNNT ceramics. The particle size of starting KNNT was somewhat proportional to the grain size. As the milling time increases from 15h to 25h, the resulting ceramics exhibit enhancement in the values of relative density from 94.8% to 95.8%, room temperature dielectric constant (εRT) from 878 to 1213, and piezoelectric charge coefficient (d33) from 108pC/N to 128pC/N. For this range of ceramic samples, grain size refinement suppresses the maximum dielectric constant (εmax), shifts the Curie temperature (Tc) to a lower temperature and the orthorhombic-tetragonal phase transition (Tot) to a higher temperature. Further increase of milling time from 25h to 40h produces a gradual degradation in the values of relative density, εRT, and d33 of the resulting ceramics.

Keywords: perovskite, dielectric, ceramics, high-energy milling

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Authors: Jogi Prayogo, Dwi Qaqa Prasetyatama, Rahmad Dwi Afandi, Kunto Arief Prasetyo, Viorel Herniza Leksono

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PT. Pertamina Trans Kontinental managed a fleet of 364 ships in 2018 - 2020. In that period, there were 8 incidents of ship damage, causing breakdown maintenance on 6 ships belonging to PT Pertamina Trans Kontinental throughout Indonesia's operational areas due to ropes entangled in propellers. The company's losses that were caused by the fouled propellers amounted to 306.35 Million Rupiah. Of the 8 incidents, Mooring Boat PSC I was taken as a pilot project for further analysis considering the location of the ship which is in Surabaya and Mooring Boat PSC I has experienced 2 incidents of rope entanglement that caused the company's losses due to the largest Breakdown Maintenance amounted to 200.99 Million Rupiah. After analyzing the rope entanglement in the ship's propeller based on the data of Mooring Boat PSC I related to the location of propellers that are often fouled in the conventional propulsion system, it was found that there is a suitable location for the implementation of SI KUMAN tool that serves to cut ropes to prevent the occurrence of rope entangled in ship propellers. The determination of SI KUMAN tool is based on the strength of the ship's material to be installed and a suitable design to prevent the occurrence of ropes being entangled in propellers. After the installation of the "SI KUMAN" tool and monitoring carried out for 1 year period (August 2020 - August 2021), it was found that SI KUMAN tool can eliminate the risk of fouled propeller incidents which previously occurred twice in one year so that the company's loss amounted to 200.99 Million Rupiah can be eliminated and SI KUMAN tool can still operate optimally.

Keywords: breakdown maintenance, mooring boat, fleet, fouled propeller, rope entangled, cut

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Authors: Radhapiyari Laishram, Chongtham Jiten, K. Chandramani Singh

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During the last decade, there has been a significant growth in developing lead-free piezoelectric ceramics which have the potential to replace the currently dominant but highly superior lead-based piezoelectric materials such as PZT. Among the lead-free piezoelectrics, (K0.5Na0.5)NbO3 - based piezoceramics are promising candidates due to their superior piezoelectric properties and high Curie temperatures. In this work, (K0.5Na0.5)(Nb1-xVx)O3 powders with x varying the range 0 to 0.05 were synthesized from the raw materials K2CO3, Na2CO3, Nb2O5, and V2O5. These powders were ball milled with high-energy Retsch PM 100 ball mill using isopropanol as the medium at the speed of 200rpm for a duration of 8h. The milled powders were sintered at 1080oC for 1h. The crystalline phase of all the calcined powders and corresponding ceramics prepared was found to be perovskite with orthorhombic symmetry. The ceramic with V5+ content of x=0.03 exhibits the maximum values in density of 4.292 g/cc, room temperature dielectric constant (εr) of 432, and piezoelectric charge constant (d33) of 93pC/N. For this sample, the dielectric tan δ loss remains relatively low over a wide temperature range. The temperature dependence of P-E hysteresis loops has been investigated for the ceramic composition with x = 0.03.

Keywords: dielectric properties, ferroelectric properties, perovskie, piezoelectric properties

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Authors: Ngo Thi Thu, Kazuo Tanaka, Masahiro Tanaka, Dao Ngoc Chien

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Nanometric superfocusing of optical intensity near the tip of partially metal- coated dielectric conical probe of the convergent surface plasmon polariton wave is investigated by the volume integral equation method. It is possible to perform nanofocusing using this probe by using both linearly and radially polarized Gaussian beams as the incident waves. Strongly localized and enhanced optical near-fields can be created on the tip of this probe for the cases of both incident Gaussian beams. However the intensity distribution near the probe tip was found to be very sensitive to the shape of the probe tip.

Keywords: waveguide, surface plasmons, electromagnetic theory

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Authors: Shalini Bahel, Maalti Puri, Sukhleen Bindra Narang

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Ceramic samples of (Pb0.55Ca0.45) (Fe0.5Nb0.5)O3 and (Pb0.45Ca0.55)(Fe0.5Nb0.5)O3 were synthesized by columbite precursor method and characterized for structural and dielectric properties. Both the synthesized samples have perovskite structure with tetragonal symmetry. The variations in relative permittivity and loss tangent were measured as a function of frequency at room temperature. Both the relative permittivity and loss tangent decreased with increase in frequency. A reasonably high value of relative permittivity of 63.46, loss tangent of 0.0067 at 15 MHz and temperature coefficient of relative permittivity of -82 ppm/˚C was obtained for (Pb0.45Ca0.55) (Fe0.5Nb0.5) O3.

Keywords: loss tangent, perovskite, relative permittivity, X-ray diffraction

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Authors: Sabry Shaaban, Tom McNamara, Sarah Hudson

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This article studies the performance of unpaced serial production lines that are subject to breakdown and are imbalanced in terms of both of their processing time means (MTs) and buffer storage capacities (BCs). Simulation results show that the best pattern in terms of throughput is a balanced line with respect to average buffer level; the best configuration is a monotone decreasing MT order, together with an ascending BC arrangement. Statistical analysis shows that BC, patterns of MT and BC imbalance, line length and degree of imbalance all contribute significantly to performance. Results show that unbalanced lines cope well with unreliability.

Keywords: unreliable unpaced serial lines, simulation, unequal mean operation times, uneven buffer capacities, patterns of imbalance, throughput, average buffer level

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Authors: Mohammed Omar

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Using Chenopodium murale leaf, gold nanoparticles (Au NP's) were biosynthesized effectively in an amicable strategy. The casting process was used to create composite layers of sodium alginate and polyvinyl pyrrolidone. Gold nanoparticles were incorporated into the polyvinyl pyrrolidone (PVP)/ sodium alginate (NaAlg) polymer blend by casting technique. Before and after exposure to different doses of gamma irradiation (2, 4, 6 Mrad), thin films of synthesized nanocomposites were analyzed. XRD revealed the amorphous nature of polymer blends (PVP/ NaAlg), which decreased by both Au NP's embedding and consecutive doses of irradiation. FT-IR spectra revealed interactions and differences within the functional groups of their respective pristine components and dopant nano-fillers. The optical properties of PVP/NaAlg – Au NP thin films (refractive index n, energy gap Eg, Urbach energy Eu) were examined before and after the irradiation procedure. Transmission electron micrographs (TEM) demonstrated a decrease in the size of Au NP’s and narrow size distribution as the gamma irradiation dose was increased. Gamma irradiation was found to influence the electrical conductivity of synthesized composite films, as well as dielectric permittivity (ɛ′) and dielectric losses (ε″).

Keywords: PVP, SPR, γ-radiations, XRD

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Authors: Odunayo Olawuyi Fadodun

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Dielectric elastomers (DEs) are a type of intelligent materials with salient features like electromechanical coupling, lightweight, fast actuation speed, low cost and high energy density that make them good candidates for numerous engineering applications. This paper adopts a new nonlinear electroelastic constitutive theory to examine radial deformation of a pressurized thick-walled spherical shell of soft dielectric material with compliant electrodes on its inner and outer surfaces. A general formular for the internal pressure, which depends on the deformation and a potential difference between boundary electrodes or uniform surface charge distributions, is obtained in terms of special function. To illustrate the effects of an applied electric field on the mechanical behaviour of the shell, three different energy functions with distinct mechanical properties are employed for numerical purposes. The observed behaviour of the shells is preserved in the presence of an applied electric field, and the influence of the field due to a potential difference declines more slowly with the increasing deformation to that produced by a surface charge. Counterpart results are then presented for the thin-walled shell approximation as a limiting case of a thick-walled shell without restriction on the energy density. In the absence of internal pressure, it is obtained that inflation is caused by the application of an electric field. The resulting numerical solutions of the theory presented in this work are in agreement with those predicted by the generally adopted Dorfmann and Ogden model.

Keywords: constitutive theory, elastic dielectric, electroelasticity, finite deformation, nonlinear response, spherical shell

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Authors: Debabrata Bhadra, B. K. Chaudhuri

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The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

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Authors: Reem M. Altuwirqi, Mohja S. Summan, Entesar A. Ganash, Safia H. Hamidalddin, Tamer E. Youssef, Mohammed A. Gondal

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Laser-Induced Breakdown Spectroscopy (LIBS) technique using 1064 nm Nd: YAG laser was optimized and applied for investigating the existence of radioactive elements (uranium) in twenty-six different ceramic tiles. These tiles were collected from the local Saudi market. Qualitative and quantitative analysis for trace radioactive elements like uranium in these samples was achieved using LIBS. The plasma parameters such as temperature and electron density were calculated to confirm that the plasma generated by the tile samples under laser irradiation can be related to analyte concentrations. In order to perform a quantitative analysis, calibration curves were constructed for two uranium lines (U II (424.166 nm) and U II (424.437 nm)). The Uranium activity concentration in Bq/kg for each sample was measured. Cross-validation of LIBS results with a conventional technique such as Gamma-Ray spectroscopy was also carried out for five ceramic samples. The results show that the LIBS method is an effective way of determining radioactive elements such as uranium in ceramic tiles. Moreover, the uranium concentrations of the investigated samples were below the permissible safe limit for building materials in the majority of samples. Such LIBS system could be applied to determine the presence of natural radioactive elements in ceramic tiles and their radioactivity level rapidly to ensure that they are under the safe allowed limit.

Keywords: laser-induced breakdown spectroscopy, gamma-ray spectroscopy, natural radioactivity, uranium, ceramic tiles

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Authors: A. A. Azab

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In this work, Sm0.6Sr0.4CoxMn1-xO3 (x=0, 0.1, 0.2 and 0.3) was synthesized by sol-gel method for magnetocaloric effect (MCE) applications. XRD analysis confirmed formation of the required orthorhombic phase of perovskite, and there is crystallographic phase transition as a result of substitution. Maxwell-Wagner interfacial polarisation and Koops phenomenological theory were used to investigate and analyze the temperature and frequency dependency of the dielectric permittivity. The phase transition from the ferromagnetic to the paramagnetic state was demonstrated to be second order. Based on the isothermal magnetization curves obtained at various temperatures, the magnetic entropy change was calculated. A magnetocaloric effect (MCE) over a wide temperature range was studied by determining DSM and the relative cooling power (RCP).

Keywords: magnetocaloric effect, pperovskite, magnetic phase transition, dielectric permittivity

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Authors: Priyanka Kumari Gupta, Punya Prasanna Paltani, Shrivishal Tripathi

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This paper proposes a nonlinear photonic crystal ring resonator-based all-optical 2 × 2 switch. The nonlinear Kerr effect is used to evaluate the essential 2 x 2 components of the photonic crystal-based optical switch, including the bar and cross states. The photonic crystal comprises a two-dimensional square lattice of dielectric rods in an air background. In the background air, two different dielectric materials are used for this comparison study separately. Initially with chalcogenide glass rods, then with GaAs rods. For both materials, the operating wavelength, bandgap diagram, operating power intensities, and performance parameters, such as the extinction ratio, insertion loss, and cross-talk of an optical switch, have also been estimated using the plane wave expansion and the finite-difference time-domain method. The chalcogenide glass material (Ag20As32Se48) has a high refractive index of 3.1 which is highly suitable for switching operations. This dielectric material is immersed in an air background with a nonlinear Kerr coefficient of 9.1 x 10-17 m2/W. The resonance wavelength is at 1552 nm, with the operating power intensities at the cross-state and bar state around 60 W/μm2 and 690 W/μm2. The extinction ratio, insertion loss, and cross-talk value for the chalcogenide glass at the cross-state are 17.19 dB, 0.051 dB, and -17.14 dB, and the bar state, the values are 11.32 dB, 0.025 dB, and -11.35 dB respectively. The gallium arsenide (GaAs) dielectric material has a high refractive index of 3.4, a direct bandgap semiconductor material highly preferred nowadays for switching operations. This dielectric material is immersed in an air background with a nonlinear Kerr coefficient of 3.1 x 10-16 m2/W. The resonance wavelength is at 1558 nm, with the operating power intensities at the cross-state and bar state around 110 W/μm2 and 200 W/μm2. The extinction ratio, insertion loss, and cross-talk value for the chalcogenide glass at the cross-state are found to be 3.36.19 dB, 2.436 dB, and -5.8 dB, and for the bar state, the values are 15.60 dB, 0.985 dB, and -16.59 dB respectively. This paper proposes an all-optical 2 × 2 switch based on a nonlinear photonic crystal using a ring resonator. The two-dimensional photonic crystal comprises a square lattice of dielectric rods in an air background. The resonance wavelength is in the range of photonic bandgap. Later, another widely used material, GaAs, is also considered, and its performance is compared with the chalcogenide glass. Our presented structure can be potentially applicable in optical integration circuits and information processing.

Keywords: photonic crystal, FDTD, ring resonator, optical switch

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Authors: Parveen Kumar, J. K. Juneja, Chandra Prakash, K. K. Raina

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A series of polycrystalline ferroelectric ceramics with compositional formula Ba0.80-xSmxPb0.20Ti0.90Zr0.10O3 with x varying from 0 to 0.01 in the steps of 0.0025 has been prepared by solid state reaction method. The dielectric constant and tangent loss was measured as a function of frequency from 100Hz to 1MHz at different temperatures (200-500oC). The electrical behavior was then investigated using complex impedance spectroscopy (CIS) technique. From the CIS study, it has been found that there is a contribution of both grain and grain boundary in the electrical behavior of such ceramics. Grain and grain boundary resistivity and capacitance were calculated at different temperature using CIS technique. The present paper is about the discussion of grain and grain boundary contribution towards the electrical properties of Sm modified BaTiO3 based ceramics at high temperature.

Keywords: grain, grain boundary, impedance, dielectric

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Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Hung-Hsi Huang, Si-Fu Chen, Yun-Jung Yang, Bo-Chun Chiang, Yu-Chuang Chen, Shen-Tin Yang

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AlGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied due to their intrinsic advantages of high breakdown electric field, high electron saturation velocity, and excellent chemical stability. They are also suitable for ultra-violet (UV) photodetection due to the corresponding wavelengths of GaN bandgap. To improve the optical responsivity by decreasing the dark current due to gate leakage problems and limited Schottky barrier heights in GaN-based HEMT devices, various metal-oxide-semiconductor HEMTs (MOS-HEMTs) have been devised by using atomic layer deposition (ALD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), liquid phase deposition (LPD), and RF sputtering. The gate dielectrics include MgO, HfO2, Al2O3, La2O3, and TiO2. In order to provide complementary circuit operation, enhancement-mode (E-mode) devices have been lately studied using techniques of fluorine treatment, p-type capper, piezoneutralization layer, and MOS-gate structure. This work reports an Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMT design by using a cost-effective ozone water oxidization technique. The present ozone oxidization method advantages of low cost processing facility, processing simplicity, compatibility to device fabrication, and room-temperature operation under atmospheric pressure. It can further reduce the gate-to-channel distance and improve the transocnductance (gm) gain for a specific oxide thickness, since the formation of the Al2O3 will consume part of the AlGaN barrier at the same time. The epitaxial structure of the studied devices was grown by using the MOCVD technique. On a Si substrate, the layer structures include a 3.9 m C-doped GaN buffer, a 300 nm GaN channel layer, and a 5 nm Al0.25Ga0.75N barrier layer. Mesa etching was performed to provide electrical isolation by using an inductively coupled-plasma reactive ion etcher (ICP-RIE). Ti/Al/Au were thermally evaporated and annealed to form the source and drain ohmic contacts. The device was immersed into the H2O2 solution pumped with ozone gas generated by using an OW-K2 ozone generator. Ni/Au were deposited as the gate electrode to complete device fabrication of MOS-HEMT. The formed Al2O3 oxide thickness 7 nm and the remained AlGaN barrier thickness is 2 nm. A reference HEMT device has also been fabricated in comparison on the same epitaxial structure. The gate dimensions are 1.2 × 100 µm 2 with a source-to-drain spacing of 5 μm for both devices. The dielectric constant (k) of Al2O3 was characterized to be 9.2 by using C-V measurement. Reduced interface state density after oxidization has been verified by the low-frequency noise spectra, Hooge coefficients, and pulse I-V measurement. Improved device characteristics at temperatures of 300 K-450 K have been achieved for the present MOS-HEMT design. Consequently, Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMTs by using the ozone water oxidization method are reported. In comparison with a conventional Schottky-gate HEMT, the MOS-HEMT design has demonstrated excellent enhancements of 138% (176%) in gm, max, 118% (139%) in IDS, max, 53% (62%) in BVGD, 3 (2)-order reduction in IG leakage at VGD = -60 V at 300 (450) K. This work is promising for millimeter-wave integrated circuit (MMIC) and three-terminal active UV photodetector applications.

Keywords: MOS-HEMT, enhancement mode, AlGaN/GaN, passivation, ozone water oxidation, gate leakage

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Authors: Usman Dahiru, Faisal Saleem, Kui Zhang, Adam Harvey

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Volatile organic compounds (VOCs) are atmospheric contaminants predominantly derived from petroleum spills, solvent usage, agricultural processes, automobile, and chemical processing industries, which can be detrimental to the environment and human health. Environmental problems such as the formation of photochemical smog, organic aerosols, and global warming are associated with VOC emissions. Research showed a clear relationship between VOC emissions and cancer. In recent years, stricter emission regulations, especially in industrialized countries, have been put in place around the world to restrict VOC emissions. Non-thermal plasmas (NTPs) are a promising technology for reducing VOC emissions by converting them into less toxic/environmentally friendly species. The dielectric barrier discharge (DBD) plasma is of interest due to its flexibility, moderate capital cost, and ease of operation under ambient conditions. In this study, a dielectric barrier discharge (DBD) reactor has been developed for the decomposition of cyclohexane (as a VOC model compound) using nitrogen, dry, and humidified air carrier gases. The effect of specific input energy (1.2-3.0 kJ/L), residence time (1.2-2.3 s) and concentration (220-520 ppm) were investigated. It was demonstrated that the removal efficiency of cyclohexane increased with increasing plasma power and residence time. The removal of cyclohexane decreased with increasing cyclohexane inlet concentration at fixed plasma power and residence time. The decomposition products included H₂, CO₂, H₂O, lower hydrocarbons (C₁-C₅) and solid residue. The highest removal efficiency (98.2%) was observed at specific input energy of 3.0 kJ/L and a residence time of 2.3 s in humidified air plasma. The effect of humidity was investigated to determine whether it could reduce the formation of solid residue in the DBD reactor. It was observed that the solid residue completely disappeared in humidified air plasma. Furthermore, the presence of OH radicals due to humidification not only increased the removal efficiency of cyclohexane but also improves product selectivity. This work demonstrates that cyclohexane can be converted to smaller molecules by a dielectric barrier discharge (DBD) non-thermal plasma reactor by varying plasma power (SIE), residence time, reactor configuration, and carrier gas.

Keywords: cyclohexane, dielectric barrier discharge reactor, non-thermal plasma, removal efficiency

Procedia PDF Downloads 107

Authors: S. Slimani, B. Djellouli

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Novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials like Ge is a very promising material due to its high mobility and is being considered to replace Si in the channel to achieve higher drive currents and switching speeds .Various approaches to circumvent the scaling limits to benchmark the performance of nanoscale MOSFETS with different channel materials, the optimized structure is simulated within nextnano in order to highlight the quantum effects on DG MOSFETs when Si is replaced by Ge and SiO2 is replaced by ZrO2 and HfO2as the gate dielectric. The results have shown that Ge MOSFET have the highest mobility and high permittivity oxides serve to maintain high drive current. The simulations show significant improvements compared with DGMOSFET using SiO2 gate dielectric and Si channel.

Keywords: high mobility, high-k, quantum effects, SOI-DGMOSFET

Procedia PDF Downloads 334

Authors: Nakul Agrawal, Y. M. Puri

Abstract:

TPM methodology is a proven approach to increase Overall Equipment Effectiveness (OEE) of machine. OEE is an established method to monitor and improve the effectiveness of manufacturing process. OEE is a product of equipment availability, performance efficiency and quality performance of manufacturing operations. The paper presents a project work for improving OEE of CNC-VMC in a manufacturing industry with the help of TPM tools Kaizen and Autonomous Maintenance. The aim of paper is to enhance OEE by minimizing the breakdown and re-work, increase availability, performance and quality. The calculated OEE of bottle necking machines for 4 months is lower of 53.3%. Root Cause Analysis RCA tools like fishbone diagram, Pareto chart are used for determining the reasons behind low OEE. While Tool like Why-Why analysis is use for determining the basis reasons for low OEE. Tools like Kaizen and Autonomous Maintenance are effectively implemented on CNC-VMC which eliminate the causes of breakdown and prevent from reoccurring. The result obtains from approach shows that OEE of CNC-VMC improved from 53.3% to 73.7% which saves an average sum of Rs.3, 19,000.

Keywords: OEE, TPM, Kaizen, CNC-VMC, why-why analysis, RCA

Procedia PDF Downloads 353