Search results for: high frequency memristor applications

Authors: Nahla Elazab, Mohamed Aboudina, Ghada Ibrahim, Hossam Fahmy, Ahmed Khalil

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This paper presents the developed memristor based demodulators for eight circular Quadrature Amplitude Modulation (QAM) and Binary Frequency Shift Keying (BFSK) operating at relatively high frequency. In our implementations, the experimental-based ‘nonlinear’ dopant drift model is adopted along with the proposed circuits providing incorporation of all known non-idealities of practically realized memristor and gaining high operation frequency. The suggested designs leverage the distinctive characteristics of the memristor device, definitely, its changeable average memristance versus the frequency, phase and amplitude of the periodic excitation input. The proposed demodulators feature small integration area, low power consumption, and easy implementation. Moreover, the proposed QAM demodulator precludes the requirement for the carrier recovery circuits. In doing so, the designs were validated by transient simulations using the nonlinear dopant drift memristor model. The simulations results show high agreement with the theory presented.

Keywords: BFSK, demodulator, high frequency memristor applications, memristor based analog circuits, nonlinear dopant drift model, QAM

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Authors: Naheem Olakunle Adesina

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The memristor is considered as one of the promising candidates for mamoelectronic engineering and applications. Owing to its high compatibility with CMOS, nanoscale size, and low power consumption, memristor has been employed in the design of commonly used circuits such as phase-locked loop (PLL). In this paper, we designed a memristor-based loop filter (LF) together with other components of PLL. Following this, we evaluated the noise-rejection feature of loop filter by comparing the noise levels of input and output signals of the filter. Our SPICE simulation results showed that memristor behaves like a linear resistor at high frequencies. The result also showed that loop filter blocks the high-frequency components from phase frequency detector so as to provide a stable control voltage to the voltage controlled oscillator (VCO). In addition, we examined the effects of temperature on the performance of the designed phase locked loop circuit. A critical temperature, where there is frequency drift of VCO as a result of variations in control voltage, is identified. In conclusion, the memristor is a suitable choice for nanoelectronic systems owing to a small area, low power consumption, dense nature, high switching speed, and endurance. The proposed memristor-based loop filter, together with other components of the phase locked loop, can be designed using memristive emulator and EDA tools in current CMOS technology and simulated.

Keywords: Fast Fourier Transform, hysteresis curve, loop filter, memristor, noise, phase locked loop, voltage controlled oscillator

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Authors: Wang Zhulin, Min Fuhong, Peng Guangya, Wang Yaoda, Cao Yi

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In this paper, a magnetron memristor model based on hyperbolic sine function is presented and the correctness proved by studying the trajectory of its voltage and current phase, and then a memristor chaotic system with the memristor model is presented. The phase trajectories and the bifurcation diagrams and Lyapunov exponent spectrum of the magnetron memristor system are plotted by numerical simulation, and the chaotic evolution with changing the parameters of the system is also given. The paper includes numerical simulations and mathematical model, which confirming that the system, has a wealth of dynamic behavior.

Keywords: memristor, chaotic circuit, dynamical behavior, chaotic system

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Authors: Ahmed Emara, Maged Ghoneima, Mohamed Dessouky

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Demand for low power fast memories is increasing with the increase in IC’s complexity, in this paper we introduce a proposal for a compact SRAM based on memristor devices. The compact size of the proposed cell (1T2M compared to 6T of traditional SRAMs) allows denser memories on the same area. In this paper, we will discuss the proposed memristor memory cell for single/multi bit data storing configurations along with the writing and reading operations. Stored data stability across successive read operation will be illustrated, operational simulation results and a comparison of our proposed design with previously conventional SRAM and previously proposed memristor cells will be provided.

Keywords: memristor, multi-bit, single-bit, circuits, systems

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Authors: X. S. Wu, H. Jia, P. H. Qian, Z. Zhang, H. L. Cai, F. M. Zhang

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A bipolar resistance switching behaviour is detected for a Ti/TiO2-x/Au memristor device, which is fabricated by a masked designed magnetic sputtering. The current dependence of voltage indicates the curve changes slowly and continuously. When voltage pulses are applied to the device, the set and reset processes maintains linearity, which is used to simulate the synapses. We argue that the conduction mechanism of the device is from the oxygen vacancy channel model, and the resistance of the device change slowly due to the reaction between the titanium electrode and the intermediate layer and the existence of a large number of oxygen vacancies in the intermediate layer. Then, Hopfield neural network is constructed to simulate the behaviour of neural network in image processing, and the accuracy rate is more than 98%. This shows that titanium dioxide memristor has a broad application prospect in high performance neural network simulation.

Keywords: memristor fabrication, neuromorphic computing, bionic synaptic application, TiO₂-based

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Authors: Juhi Faridi, Mohd. Ajmal Kafeel

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The advancements in the field of Artificial Intelligence (AI) and technology has led to an evolution of an intelligent era. Neural networks, having the computational power and learning ability similar to the brain is one of the key AI technologies. Neuromorphic computing system (NCS) consists of the synaptic device, neuronal circuit, and neuromorphic architecture. Memristor are a promising candidate for neuromorphic computing systems, but when it comes to neuromorphic computing, the conductance behavior of the synaptic memristor or neuronal memristor needs to be studied thoroughly in order to fathom the neuroscience or computer science. Furthermore, there is a need of more simulation work for utilizing the existing device properties and providing guidance to the development of future devices for different performance requirements. Hence, development of NCS needs more simulation work to make use of existing device properties. This work aims to provide an insight to build neuronal circuits using memristors to achieve a Memristor based NCS.  Here we throw a light on the research conducted in the field of memristors for building analog and digital circuits in order to motivate the research in the field of NCS by building memristor based neural circuits for advanced AI applications. This literature is a step in the direction where we describe the various Key findings about memristors and its analog and digital circuits implemented over the years which can be further utilized in implementing the neuronal circuits in the NCS. This work aims to help the electronic circuit designers to understand how the research progressed in memristors and how these findings can be used in implementing the neuronal circuits meant for the recent progress in the NCS.

Keywords: analog circuits, digital circuits, memristors, neuromorphic computing systems

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Authors: Madina Alimova, Margulan Ibraimov, Ayan Tileu

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The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed.

Keywords: porous silicon, current-voltage characteristics, memristor, nanofilms

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Authors: Xize Dai, Jian Hao, Claus Leth Bak, Gian Carlo Montanari, Huai Wang

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Printed Circuit Board (PCB) is a critical component applicable to power electronics systems, especially for high-voltage applications involving several high-voltage and high-frequency SiC/GaN devices. The insulation system of PCB is facing more challenges from high-voltage and high-frequency stress that can alter the dielectric properties. Dielectric properties of the PCB insulation system also determine the electrical field distribution that correlates with intrinsic and extrinsic aging mechanisms. Hence, investigating the dielectric properties in the frequency domain of the PCB insulation system is a must. The paper presents the frequency-dependent, temperature-dependent, and voltage-dependent dielectric properties, permittivity, conductivity, and dielectric loss tangents of PCB insulation systems. The dielectric properties mechanisms associated with frequency, temperature, and voltage are revealed from the design perspective. It can be concluded that the dielectric properties of PCB in the frequency domain show a strong dependence on voltage, frequency, and temperature. The voltage-, frequency-, and temperature-dependent dielectric properties are associated with intrinsic conduction behavior and polarization patterns from the perspective of dielectric theory. The results may provide some reference for the PCB insulation system design in high voltage, high frequency, and high-temperature power electronics applications.

Keywords: electrical insulation system, dielectric properties, high voltage and frequency, printed circuit board

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Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

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The power converter that feeds high-frequency, high-voltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively low-frequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid over voltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: high-voltage transformer, resonant converter, soft-commutation, external inductance

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Authors: Toru Shionoya, Yosuke Kurihara, Takashi Kaburagi, Kajiro Watanabe

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Mass-produced bidirectional microphones have attractive characteristics. They work as a microphone as well as a sensor with high gain over a wide frequency range; they are also highly reliable and economical. We present novel multiple functional uses of the microphones. A mathematical model for explaining the high-pass-filtering characteristics of bidirectional microphones was presented. Based on the model, the characteristics of the microphone were investigated, and a novel use for the microphone as a sensor with a wide frequency range was presented. In this study, applications for using the microphone as a security sensor and a human biosensor were introduced. The mathematical model was validated through experiments, and the feasibility of the abovementioned applications for security monitoring and the biosignal monitoring were examined through experiments.

Keywords: bidirectional microphone, low-frequency, mathematical model, frequency response

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Authors: Amir Shariffar, Haider Salman, Tanveer Siddique, Omar Manasreh

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According to the recent studies on metal-oxide memristors, researchers tend to improve the stability, endurance, and uniformity of resistive switching (RS) behavior in memristors. Specifically, the main challenge is to prevent abrupt ruptures in the memristor’s filament during the RS process. To address this problem, we are proposing a low-cost hybrid structure of metal oxide quantum dots (QDs) and thin films to control the formation of filaments in memristors. We aim to use metal oxide quantum dots because of their unique electronic properties and quantum confinement, which may improve the resistive switching behavior. QDs have discrete energy spectra due to electron confinement in three-dimensional space. Because of Coulomb repulsion between electrons, only a few free electrons are contained in a quantum dot. This fact might guide the growth direction for the conducting filaments in the metal oxide memristor. As a result, it is expected that QDs can improve the endurance and uniformity of RS behavior in memristors. Moreover, we use a hybrid structure of intrinsic n-type quantum dots and p-type thin films to introduce a potential barrier at the junction that can smooth the transition between high and low resistance states. A bottom-up approach is used for fabricating the proposed memristor using different types of metal-oxide QDs and thin films. We synthesize QDs including, zinc oxide, molybdenum trioxide, and nickel oxide combined with spin-coated thin films of titanium dioxide, copper oxide, and hafnium dioxide. We employ fluorine-doped tin oxide (FTO) coated glass as the substrate for deposition and bottom electrode. Then, the active layer composed of one type of quantum dots, and the opposite type of thin films is spin-coated onto the FTO. Lastly, circular gold electrodes are deposited with a shadow mask by using electron-beam (e-beam) evaporation at room temperature. The fabricated devices are characterized using a probe station with a semiconductor parameter analyzer. The current-voltage (I-V) characterization is analyzed for each device to determine the conduction mechanism. We evaluate the memristor’s performance in terms of stability, endurance, and retention time to identify the optimal memristive structure. Finally, we assess the proposed hypothesis before we proceed to the optimization process for fabricating the memristor.

Keywords: memristor, quantum dot, resistive switching, thin film

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Authors: Yan Yu, Wang Yu, Chen Xintong, Liu Yi, Zhang Yanzhong, Wang Yanji, Chen Xingyu, Zhang Miaocheng, Tong Yi

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Neuromorphic computing based on spiking neural networks (SNNs) has emerged as a promising avenue for building the next generation of intelligent computing systems. Owing to its high-density integration, low power, and outstanding nonlinearity, memristors have attracted emerging attention on achieving SNNs. However, fabricating a low-power and robust memristor-based spiking neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a TiO₂-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, used to realize single layer fully connected (FC) SNNs. Moreover, our TiO₂-based resistive switching (RS) memristors realize spiking-time-dependent-plasticity (STDP), originating from the Ag diffusion-based filamentary mechanism. This work demonstrates that TiO2-based memristors may provide an efficient method to construct hardware neuromorphic computing systems.

Keywords: leaky integrate-and-fire, memristor, spiking neural networks, spiking-time-dependent-plasticity

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Authors: B. Pavan Kumar Reddy, P. Michael Preetam Raj, Souri Banerjee, Souvik Kundu

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In this work, the fabrication and characterization of copper-doped zinc oxide (Cu:ZnO) based memristor devices with aluminum (Al) and indium tin oxide (ITO) metal electrodes are reported. The thin films of Cu:ZnO was synthesized using low-cost and low-temperature chemical process. The Cu:ZnO was then deposited onto ITO bottom electrodes using spin-coater technique, whereas the top electrode Al was deposited utilizing physical vapor evaporation technique. Ellipsometer was employed in order to measure the Cu:ZnO thickness and it was found to be 50 nm. Several surface and materials characterization techniques were used to study the thin-film properties of Cu:ZnO. To ascertain the efficacy of Cu:ZnO for memristor applications, electrical characterizations such as current-voltage (I-V), data retention and endurance were obtained, all being the critical parameters for next-generation memory. The I-V characteristic exhibits switching behavior with asymmetrical hysteresis loops. This work imputes the resistance switching to the positional drift of oxygen vacancies associated with respect to the Al/Cu:ZnO junction. Further, a non-linear curve fitting regression techniques were utilized to determine the equivalent circuit for the fabricated Cu:ZnO memristors. Efforts were also devoted in order to establish its potentiality for different electronic applications.

Keywords: copper doped, metal-oxides, oxygen vacancies, resistive switching

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Authors: Rana Mahmoud

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This study represents a systematic study of the Operational Transconductance Amplifiers capacitance (OTA-C) filters or as it is often called Gm-C filters. OTA-C filters have been paid a great attention for the last decades. As Gm-C filters operate in an open loop topology, this makes them flexible to perform in low and high frequencies. As such, Gm-C filters can be used in various wireless communication applications. Another property of Gm-C filters is its electronic tunability, thus different filter frequency characteristics can be obtained without changing the inductance and resistance values. This can be achieved by an OTA (Operational Transconductance Amplifier) and a capacitor. By tuning the OTA transconductance, the cut-off frequency will be tuned and different frequency responses are achieved. Different high-order analog filters can be design using Gm-C filters including low pass, high pass and band pass filters. 1st and 2nd order low pass, high pass and band pass filters are presented in this paper.

Keywords: Gm-C, filters, low-pass, high-pass, band-pass

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Authors: Vaishnavi Patil, K. M. Kurundkar

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Electrical Drives play a vital role in industry development and applications. Drives have an inevitable part in the needs of various fields such as industry, commercial, and domestic applications. The development of material technology, Power Electronics devices, and accompanying applications led to the focus of industry and researchers on high-speed electrical drives. Numerous articles charted the applications of electrical machines and various converters for high-speed applications. The choice depends on the application under study. This paper goals to highlight high-speed applications, main challenges, and some applications of electrical drives in the field.

Keywords: high-speed, electrical machines, drives, applications

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Authors: Azwadi Mohamad, Pauzi Yahaya, Nadiah Hudi

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Earthing system for high-voltage transmission tower is designed to protect the working personnel and equipments, and to maintain the quality of supply during fault. The existing earthing system for transmission towers in TNB’s system is purposely designed for normal power frequency (low-frequency) fault conditions that take into account the step and touch voltages. This earthing design is found to be inapt for lightning (transient) condition to a certain extent, which involves a high-frequency domain. The current earthing practice of laying the electrodes radially in straight 60 m horizontal lines under the ground, in order to achieve the specified impedance value of less than 10 Ω, was deemed ineffective in reducing the high-frequency impedance. This paper introduces a new earthing design that produces low impedance value at the high-frequency domain, without compromising the performance of low-frequency impedance. The performances of this new earthing design, as well as the existing design, are simulated for various soil resistivity values at varying frequency. The proposed concentrated earthing design is found to possess low TFR value at both low and high-frequency. A good earthing design should have a fine balance between compact and radial electrodes under the ground.

Keywords: earthing design, high-frequency, lightning, tower footing impedance

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Authors: Justin Morton, Mohammad Khavari, Abhinav Priyadarshi, Nicole Grobert, Dmitry G. Eskin, Jiawei Mi, Kriakos Porfyrakis, Paul Prentice

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Ultrasonic cavitation is used for various processes and applications. Recently, ultrasonic assisted liquid phase exfoliation has been implemented to produce two dimensional nanomaterials. Depending on parameters such as input transducer power and the operational frequency used to induce the cavitation, bubble dynamics can be controlled and optimised. Using ultra-high-speed imagining and acoustic pressure measurements, a dual-frequency systemand its effect on bubble dynamics was investigated. A high frequency transducer (1.174 MHz) showed that bubble fragments and satellite bubbles induced from a low frequency transducer (24 kHz) were able to extend their lifecycle. In addition, this combination of ultrasonic frequencies generated higher acoustic emissions (∼24%) than the sum of the individual transducers. The dual-frequency system also produced an increase in cavitation zone size of∼3 times compared to the low frequency sonotrode. Furthermore, the high frequency induced cavitation bubbleswere shown to rapidly oscillate, although remained stable and did not transiently collapse, even in the presence of a low pressure field. Finally, the spatial distribution of satellite and fragment bubbles from the sonotrode were shown to increase, extending the active cavitation zone. These observations elucidated the benefits of using a dual-frequency system for generating nanomaterials with the aid of ultrasound, in deionised water.

Keywords: dual-frequency, cavitation, bubble dynamics, graphene

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Authors: P. Michael Preetam Raj, Souri Banerjee, Souvik Kundu

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Oxide based memristors were fabricated in order to establish its potential applications in analog/digital electronics. BaTiO₃-BiFeO₃ (BT-BFO) was employed as an active material, whereas platinum (Pt) and Nb-doped SrTiO₃ (Nb:STO) were served as a top and bottom electrodes, respectively. Piezoelectric force microscopy (PFM) was utilized to present the ferroelectricity and repeatable polarization inversion in the BT-BFO, demonstrating its effectiveness for resistive switching. The fabricated memristors exhibited excellent electrical characteristics, such as hysteresis current-voltage (I-V), high on/off ratio, high retention time, cyclic endurance, and low operating voltages. The band-alignment between the active material BT-BFO and the substrate Nb:STO was experimentally investigated using X-Ray photoelectron spectroscopy, and it attributed to staggered heterojunction alignment. An energy band diagram was proposed in order to understand the electrical transport in BT-BFO/Nb:STO heterojunction. It was identified that the I-V curves of these memristors have several discontinuities. Curve fitting technique was utilized to analyse the I-V characteristic, and the obtained I-V equations were found to be parabolic. Utilizing this analysis, a non-linear BT-BFO memristors equivalent circuit model was developed. Interestingly, the obtained equivalent circuit of the BT-BFO memristors mimics the identical electrical performance, those obtained in the fabricated devices. Based on the developed equivalent circuit, a finite state machine (FSM) design was proposed. Efforts were devoted to fabricate the same FSM, and the results were well matched with those in the simulated FSM devices. Its multilevel noise filtering and immunity to external noise characteristics were also studied. Further, the feature of variable negative resistance was established by controlling the current through the memristor.

Keywords: band alignment, finite state machine, polarization inversion, resistive switching

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Authors: Jaswinder Kaur, Nitika, Navneet Kaur, Rajesh Khanna

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A hand-fan shaped microstrip patch antenna (MPA) for L-band and S-band applications is designed, and its characteristics have been reconnoitered. The proposed microstrip patch antenna with double U-slot defected ground structure (DGS) is fabricated on an FR4 substrate which is a very readily available and inexpensive material. The suggested antenna is optimized using Orthogonal Design Method (ODM) of Design of Experiments (DOE) to cover the frequency range from 0.91-2.82 GHz for L-band and S-band applications. The L-band covers the frequency range of 1-2 GHz, which is allocated to telemetry, aeronautical, and military systems for passive satellite sensors, weather radars, radio astronomy, and mobile communication. The S-band covers the frequency range of 2-3 GHz, which is used by weather radars, surface ship radars and communication satellites and is also reserved for various wireless applications such as Worldwide Interoperability for Microwave Access (Wi-MAX), super high frequency radio frequency identification (SHF RFID), industrial, scientific and medical bands (ISM), Bluetooth, wireless broadband (Wi-Bro) and wireless local area network (WLAN). The proposed method of optimization is very time efficient and accurate as compared to the conventional evolutionary algorithms due to its statistical strategy. Moreover, the antenna is tested, followed by the comparison of simulated and measured results.

Keywords: design of experiments, hand fan shaped MPA, L-Band, orthogonal design method, S-Band

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Authors: Vasudha Hegde, Narendra Chaulagain, H. M. Ravikumar, Sonu Mishra, Siva Yellampalli

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Acoustic sensors are extensively used in recent days not only for sensing and condition monitoring applications but also for small scale energy harvesting applications to power wireless sensor networks (WSN) due to their inherent advantages. The natural frequency of the structure plays a major role in energy harvesting applications since the sensor key element has to operate at resonant frequency. In this paper, circular diaphragm based MEMS acoustic sensor is modelled by Lumped Element Model (LEM) and the natural frequency is compared with the simulated model using Finite Element Method (FEM) tool COMSOL Multiphysics. The sensor has the circular diaphragm of 3000 µm radius and thickness of 30 µm to withstand the high SPL (Sound Pressure Level) and also to withstand the various fabrication steps. A Piezoelectric ZnO layer of thickness of 1 µm sandwiched between two aluminium electrodes of thickness 0.5 µm and is coated on the diaphragm. Further, a channel with radius 3000 µm radius and length 270 µm is connected at the bottom of the diaphragm. The natural frequency of the structure by LEM method is approximately 16.6 kHz which is closely matching with that of simulated structure with suitable approximations.

Keywords: acoustic sensor, diaphragm based, lumped element modeling (LEM), natural frequency, piezoelectric

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Authors: Amar Danial Abd Azis, Shipun Anuar Hamzah, Mohd Noh Dalimin, Khairun Nidzam Ramli, Mohd Sani Yahya, Fauziahanim Che Seman

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This paper discusses the design, simulation results, and testing of a compact dual-band printed dipole antenna operating at frequencies of 916 MHz and 1.57 GHz for LoRa and GPS applications, respectively. The basic design of this antenna uses a linear dipole that operates at 916 MHz and 2.7 GHz. A small triangular-shaped linear balun has been developed as the matching network. Parasitic elements are employed to tune the second frequency to 1.57 GHz through a parametric study. Meanwhile, a stub is used to suppress the undesired 2.6 GHz frequency. This antenna is capable of operating on dual-frequency bands simultaneously with high efficiency in suppressing the unwanted frequency. The antenna exhibits the following parameters: return loss of -18.5 dB at 916 MHz and -14 dB at 1.57 GHz, VSWR of 1.25 at 868 MHz and 1.5 at 1.57 GHz, and gain of 2 dBi at 916 MHz and 2.75 dBi at 1.57 GHz. The radiation pattern of the antenna shows a directional E-plane and an omnidirectional H-plane at both frequencies. With its compact size and dual-band capability, this antenna demonstrates great potential for use in IoT applications that require both LoRa and GPS communication, particularly in applications where a small yet efficient form factor is essential.

Keywords: dual band, dipole antenna, parasitic elements, harmonic suppression, LoRa and Gps

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Authors: L. Maiza, A. Cantagrel, M. Forestier, G. Laucoin, T. Regali

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Evaluation of High Frequency Trading (HFT) impact on financial markets is very important for traders who use market analysis to detect winning transaction opportunity. Analysis of HFT data on tobacco commodity market is discussed here and interesting linear relationship has been shown between trading frequency and difference between averaged trading prices above and below considered trading frequency. This may open new perspectives on markets data understanding and could provide possible interpretation of Adam Smith invisible hand.

Keywords: financial market, high frequency trading, analysis, impacts, Adam Smith invisible hand

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Authors: Sibel Celik, Hüseyin Ergin

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The paper aims to find the best volatility forecasting model for stock markets in Turkey. For this purpose, we compare performance of different volatility models-both traditional GARCH model and high frequency based volatility models- and conclude that both in pre-crisis and crisis period, the performance of high frequency based volatility models are better than traditional GARCH model. The findings of paper are important for policy makers, financial institutions and investors.

Keywords: volatility, GARCH model, realized volatility, high frequency data

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Authors: Settapong Malisuwan, Jesada Sivaraks, Peerawat Promkladpanao, Nattakit Suriyakrai, Navneet Madan

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In this paper, a compact microstrip patch antenna is designed for mobile LTE applications by applying the frequency-dependent Smith-Chart (FDSC) model. The FDSC model is adopted in this research to reduce the error on the frequency-dependent characteristics. The Ansoft HFSS and various techniques is applied to meet frequency and size requirements. The proposed method within this research is suitable for use in computer-aided microstrip antenna design and RF integrated circuit (RFIC) design.

Keywords: frequency-dependent, smith-chart, microstrip, antenna, LTE, CAD

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Authors: B. Y. Danjuma, A. Archibong-Eso, Aliyu M. Aliyu, H. Yeung

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In this experimental investigation, a new data for slugging frequency for high viscosity oil-gas flow are reported. Scale experiments were carried out using a mixture of air and mineral oil as the liquid phase in a 17 m long horizontal pipe with 0.0762 ID. The data set was acquired using two high-speed Gamma Densitometers at a data acquisition frequency of 250 Hz over a time interval of 30 seconds. For the range of flow conditions investigated, increase in liquid oil viscosity was observed to strongly influence the slug frequency. A comparison of the present data with prediction models available in the literature revealed huge discrepancies. A new correlation incorporating the effect of viscosity on slug frequency has been proposed for the horizontal flow, which represents the main contribution of this work.

Keywords: gamma densitometer, flow pattern, pressure gradient, slug frequency

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Authors: Vinay Kumar K. S., Shravani V., Spoorthi G., Udith K. S., Divya T. M., Venkatesha M.

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In this work, the mathematical modeling, design and analysis of a 2×2 microstrip patch antenna array (MSPA) antenna configuration is presented. Array utilizes a tiny strip antenna module with two vertical slots for 5G applications at an operating frequency of 5.3 GHz. The proposed array of antennas where the phased array antenna systems (PAAS) are used ubiquitously everywhere, from defense radar applications to commercial applications like 5G/6G. Microstrip patch antennae with slot arrays for linear polarisation parallel and perpendicular to the axis, respectively, are fed through transverse slots in the side wall of the circular waveguide and fed through longitudinal slots in the small wall of the rectangular waveguide. The microstrip patch antenna is developed using Ansys HFSS (High-Frequency Structure Simulator), this simulation tool. The maximum gain of 6.14 dB is achieved at 5.3 GHz for a single MSPA. For 2×2 array structure, a gain of 7.713 dB at 5.3 GHz is observed. Such antennas find many applications in 5G devices and technology.

Keywords: Ansys HFSS, gain, return loss, slot array, microstrip patch antenna, 5G antenna

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Authors: Rizwan Ullah, Abdar Ali, Zahid Ullah

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This paper illustrates the study of three isolated zero voltage switched (ZVS) PWM full bridge (FB) converters to charge the high voltage battery in the charger of electric vehicle (EV). EV battery chargers have several challenges such as high efficiency, high reliability, low cost, isolation, and high power density. The cost of magnetic and filter components in the battery charger is reduced when switching frequency is increased. The increase in the switching frequency increases switching losses. ZVS is used to reduce switching losses and to operate the converter in the battery charger at high frequency. The performance of each of the three converters is evaluated on the basis of ZVS range, dead times of the switches, conduction losses of switches, circulating current stress, circulating energy, duty cycle loss, and efficiency. The limitations and merits of each PWM FB converter are reviewed. The converter with broader ZVS range, high efficiency and low switch stresses is selected for battery charger applications in EV.

Keywords: electric vehicle, PWM FB converter, zero voltage switching, circulating energy

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Authors: S. B. Rathna Kumar, Sandya K. Varudhini, Aparna Ravichandran

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Telugu is a south central Dravidian language spoken in Andhra Pradesh, a southern state of India. The available speech identification tests in Telugu have been developed to determine the communication problems of individuals having a flat frequency hearing loss. These conventional speech audiometric tests would provide redundant information when used on individuals with high-frequency sloping hearing loss because of better hearing sensitivity in the low- and mid-frequency regions. Hence, conventional speech identification tests do not indicate the true nature of the communication problem of individuals with high-frequency sloping hearing loss. It is highly possible that a person with a high-frequency sloping hearing loss may get maximum scores if conventional speech identification tests are used. Hence, there is a need to develop speech identification test materials that are specifically designed to assess the speech identification performance of individuals with high-frequency sloping hearing loss. The present study aimed to develop speech identification test for individuals with high-frequency sloping hearing loss in Telugu. Individuals with high-frequency sloping hearing loss have difficulty in perception of voiceless consonants whose spectral energy is above 1000 Hz. Hence, the word lists constructed with phonemes having mid- and high-frequency spectral energy will estimate speech identification performance better for such individuals. The phonemes /k/, /g/, /c/, /ṭ/ /t/, /p/, /s/, /ś/, /ṣ/ and /h/are preferred for the construction of words as these phonemes have spectral energy distributed in the frequencies above 1000 KHz predominantly. The present study developed two word lists in Telugu (each word list contained 25 words) for evaluating speech identification performance of individuals with high-frequency sloping hearing loss. The performance of individuals with high-frequency sloping hearing loss was evaluated using both conventional and high-frequency word lists under recorded voice condition. The results revealed that the developed word lists were found to be more sensitive in identifying the true nature of the communication problem of individuals with high-frequency sloping hearing loss.

Keywords: speech identification test, high-frequency sloping hearing loss, recorded voice condition, Telugu

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Authors: P. Krachodnok

Abstract:

In this paper, the design of a multiple U-slotted microstrip patch antenna with frequency selective surface (FSS) as a superstrate for WLAN and WiMAX applications is presented. The proposed antenna is designed by using substrate FR4 having permittivity of 4.4 and air substrate. The characteristics of the antenna are designed and evaluated the performance of modelled antenna using CST Microwave studio. The proposed antenna dual resonant frequency has been achieved in the band of 2.37-2.55 GHz and 3.4-3.6 GHz. Because of the impact of FSS superstrate, it is found that the bandwidths have been improved from 6.12% to 7.35 % and 3.7% to 5.7% at resonant frequencies 2.45 GHz and 3.5 GHz, respectively. The maximum gain at the resonant frequency of 2.45 and 3.5 GHz are 9.3 and 11.33 dBi, respectively.

Keywords: multi-slotted antenna, microstrip patch antenna, frequency selective surface, artificial magnetic conduction

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Authors: Maamar Latroch, Mohamed Bourahla

Abstract:

Forward topology used in switch mode power supply (SMPS) is one of the most famous configuration feeding DC systems such as telecommunication systems and other specific applications where the galvanic isolation is required. This configuration benefits of the high frequency feature of the transformer to provide a small size and light weight of the over all system. However, the stresses existing on the power switch during an ON/OFF commutation limit the transmitted power to the DC load. This paper investigates the main causes of the stresses in voltage existing during a commutation cycle and suggest a low cost solution that eliminates the overvoltage. As a result, this configuration will yield the possibility of the use of this configuration in higher power applications. Simulation results will show the efficiency of the presented method.

Keywords: switch mode power supply, forward topology, resonance topology, high frequency commutation

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