Search results for: polysilicon

Authors: Yadollah Hezarjaribi, Mahdie Yari Esboi

Abstract:

In this paper, a novel MEMS capacitive pressure sensor with small size and high sensitivity is presented. This sensor has the separated clamped square diaphragm and the movable plate. The diaphragm material is polysilicon. The movable and fixed plates and mechanical coupling are gold. The substrate and diaphragm are pyrex glass and polysilicon, respectively. In capacitive sensor the sensitivity is proportional to deflection and capacitance changes with pressure for this reason with this design is improved the capacitance and sensitivity with small size. This sensor is designed for low pressure between 0-60 mmHg that is used for medical application such as treatment of an incurable disease called glaucoma. The size of this sensor is 350×350 µm2 and the thickness of the diaphragm is 2µm with 1μ air gap. This structure is designed by intellisuite software. In this MEMS capacitive pressure sensor the sensor sensitivity, diaphragm mechanical sensitivity for polysilicon diaphragm are 0.0469Pf/mmHg, 0.011 μm/mmHg, respectively. According to the simulating results for low pressure, the structure with polysilicon diaphragm has more change of the displacement and capacitance, this leads to high sensitivity than other diaphragms.

Keywords: glaucoma, MEMS capacitive pressure sensor, square clamped diaphragm, polysilicon

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Authors: Abdelaziz Rabhi, Mohamed Amrani, Abderrazek Ziane, Nabil Belkadi, Abdelraouf Hocini

Abstract:

In this paper, a bedimensional simulation program of the electric characteristics of reverse biased lateral polysilicon PIN diode is presented. In this case we have numerically solved the system of partial differential equations formed by Poisson's equation and both continuity equations that take into account the effect of impact ionization. Therefore we will obtain the current-voltage characteristics (I-V) of the reverse-biased structure which may include the effect of breakdown.The geometrical model assumes that the polysilicon layer is composed by a succession of defined mean grain size crystallites, separated by lateral grain boundaries which are parallel to the metallurgic junction.

Keywords: breakdown, polycrystalline silicon, PIN, grain, impact ionization

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Authors: You-Lin Wu, Zong-Xian Wu, Jing-Jenn Lin, Shih-Hung Lin

Abstract:

In this work, a polysilicon wire (PSW) coated with a mixture of 3-aminopropyltriethoxysilane (r-APTES) and Al2O3 nanoparticles as the sensing membrane prepared with various Al2O3/r-APTES and dispersing agent/r-APTES ratios for pH sensing is studied. The r-APTES and dispersed Al2O3 nanoparticles mixture was directly transferred to PSW surface by solution phase deposition (SPD). It is found that using a mixture of Al2O3 nanoparticles and r-APTES as the sensing membrane help in improving the pH sensing of the PSW sensor and a 5 min SPD deposition time is the best. Dispersing agent is found to be necessary for better pH sensing when preparing the mixture of Al2O3 nanoparticles and r-APTES. The optimum condition for preparing the mixture is found to be Al2O3/r-APTES ratio of 2% and dispersing agent/r-APTES ratio of 0.3%.

Keywords: al2o3 nanoparticles, ph sensing, polysilicon wire sensor, r-aptes

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Authors: Vineet Tiwari, R. K. Dwivedi, Geetika Srivastava

Abstract:

Piezoelectric cantilevers are exploited for their use in sensors and actuators. In this study, a unimorph cantilever beam is considered as a study element with a piezoelectric polymer Polyvinylidene fluoride (PVDF) layer bonded to a substrate layer. The different substrates like polysilicon, stainless steel and silicon nitride are tried for the study. An effort has been made to optimize and study the effect of the various parameters of the device in order to achieve maximum tip deflection. The variation of the tip displacement of the cantilever with respect to the length ratio of the nonpiezoelectric layer to the piezoelectric layer has been studied. The electric response of this unimorph cantilever beam is simulated with the help of finite element analysis software COMSOL Multiphysics.

Keywords: actuators, cantilever, piezoelectric, sensors, PVDF

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Authors: Alok Kumar Kamal, Vinod Kumar

Abstract:

The trench gate MOSFET has shown itself as the most appropriate power device for low to medium voltage power applications due to its lowest possible ON resistance among all power semiconductor devices. In this research work a double-epilayer PSGT structure using a thin layer of N+ polysilicon as gate material. The total ON-state resistance (RON) of UMOSFET can be reduced by optimizing the epilayer thickness. The optimized structure of Double-Epilayer exhibits a 25.8% reduction in the ON-state resistance at Vgs=5V and improving the switching characteristics by reducing the Reverse transfer capacitance (Cgd) by 7.4%.

Keywords: Miller-capacitance, double-Epilayer;switching characteristics, power trench MOSFET (U-MOSFET), on-state resistance, blocking voltage

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Authors: Kirankumar B. Balavalad, Bhagyashree Mudhol, B. G. Sheeparamatti

Abstract:

MEMS sensor have gained popularity in automotive, biomedical, and industrial applications. In this paper, the design and simulation of conventional, slotted, and perforated MEMS capacitive pressure sensor is proposed. Polysilicon material is used as diaphragm material that deflects due to applied pressure. Better sensitivity is the main advantage of conventional pressure sensor as compared with other two sensors and perforated pressure sensor achieves large operating pressure range. The proposed MEMS sensor demonstrated with diaphragm length 50um, gap depth 3um is being modelled. The simulation is carried out for different types of MEMS capacitive pressure sensor using COMSOL Multiphysics and Coventor ware.

Keywords: MEMS, conventional pressure sensor, slotted and perforated diaphragm, COMSOL multiphysics, coventor ware

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Authors: Waddah Abdelbagi Talha, Mohammed Abdullah Elmaleeh, John Ojur Dennis

Abstract:

This paper focuses on the simulation and implementation of a resonator micro-sensor for low magnetic field sensing based on a U-shaped cantilever and piezoresistive configuration, which works based on Lorentz force physical phenomena. The resonance frequency is an important parameter that depends upon the highest response and sensitivity through the frequency domain (frequency response) of any vibrated micro-scale of an electromechanical system (MEMS) device. And it is important to determine the direction of the detected magnetic field. The deflection of the cantilever is considered for vibrated mode with different frequencies in the range of (0 Hz to 7000 Hz); for the purpose of observing the frequency response. A simple electronic circuit-based polysilicon piezoresistors in Wheatstone's bridge configuration are used to transduce the response of the cantilever to electrical measurements at various voltages. Microcontroller-based Arduino program and PROTEUS electronic software are used to analyze the output signals from the sensor. The highest output voltage amplitude of about 4.7 mV is spotted at about 3 kHz of the frequency domain, indicating the highest sensitivity, which can be called resonant sensitivity. Based on the resonant frequency value, the mode of vibration is determined (up-down vibration), and based on that, the vector of the magnetic field is also determined.

Keywords: resonant frequency, sensitivity, Wheatstone bridge, UNO-microcontroller

Procedia PDF Downloads 87