Search results for: anisotropic wet etching
258 A Design of Anisotropic Wet Etching System to Reduce Hillocks on Etched Surface of Silicon Substrate
Authors: Alonggot Limcharoen Kaeochotchuangkul, Pathomporn Sawatchai
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This research aims to design and build a wet etching system, which is suitable for anisotropic wet etching, in order to reduce etching time, to reduce hillocks on the etched surface (to reduce roughness), and to create a 45-degree wall angle (micro-mirror). This study would start by designing a wet etching system. There are four main components in this system: an ultrasonic cleaning, a condenser, a motor and a substrate holder. After that, an ultrasonic machine was modified by applying a condenser to maintain the consistency of the solution concentration during the etching process and installing a motor for improving the roughness. This effect on the etch rate and the roughness showed that the etch rate increased and the roughness was reduced.Keywords: anisotropic wet etching, wet etching system, hillocks, ultrasonic cleaning
Procedia PDF Downloads 115257 Study of Fast Etching of Silicon for the Fabrication of Bulk Micromachined MEMS Structures
Authors: V. Swarnalatha, A. V. Narasimha Rao, P. Pal
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The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH2OH) are used as main etchant and additive, respectively. The concentration of NH2OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.Keywords: KOH, MEMS, micromachining, silicon, TMAH, wet anisotropic etching
Procedia PDF Downloads 202256 Rapid Generation of Octagonal Pyramids on Silicon Wafer for Photovoltaics by Swift Anisotropic Chemical Etching Process
Authors: Sami Iqbal, Azam Hussain, Weiping Wu, Guo Xinli, Tong Zhang
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A novel octagonal upright micro-pyramid structure was generated by wet chemical anisotropic etching on a monocrystalline silicon wafer (100). The primary objectives are to reduce front surface reflectance of silicon wafers, improve wettability, enhance surface morphology, and maximize the area coverage by generated octagonal pyramids. Under rigorous control and observation, the etching process' response time was maintained precisely. The experimental outcomes show a significant decrease in the optical surface reflectance of silicon wafers, with the lowest reflectance of 8.98%, as well as enhanced surface structure, periodicity, and surface area coverage of more than 85%. The octagonal silicon pyramid was formed with a high etch rate of 0.41 um/min and a much shorter reaction time with the addition of hydrofluoric acid coupled with magnetic stirring (mechanical agitation) at 300 rpm.Keywords: octagonal pyramids, rapid etching, solar cells, surface engineering, surface reflectance
Procedia PDF Downloads 101255 Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application
Authors: B. Bouktif, M. Gaidi, M. Benrabha
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Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper.Keywords: semiconductor nanostructure, chemical etching, optoelectronic property, silicon surface
Procedia PDF Downloads 387254 A Study on the Etching Characteristics of High aspect ratio Oxide Etching Using C4F6 Plasma in Inductively Coupled Plasma with Low Frequency Bias
Authors: ByungJun Woo
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In this study, high-aspect-ratio (HAR) oxide etching characteristics in inductively coupled plasma were investigated using low frequency (2 MHz) bias power with C4F6 gas. An experiment was conducted using CF4/C4F6/He as the mixed gas. A 100 nm (etch area)/500 nm (mask area) line patterns were used, and the etch cross-section and etch selectivity of the amorphous carbon layer thin film were derived using a scanning electron microscope. Ion density was extracted using a double Langmuir probe, and CFx and F neutral species were observed via optical emission spectroscopy. Based on these results, the possibility for HAR oxide etching using C4F6 gas chemistry was suggested in this work. These etching results also indicate that the use of C4F6 gas can significantly contribute to the development of next-generation HAR oxide etching.Keywords: plasma, etching, C4F6, high aspect ratio, inductively coupled plasma
Procedia PDF Downloads 73253 Silicon Carbide (SiC) Crystallization Obtained as a Side Effect of SF6 Etching Process
Authors: N. K. A. M. Galvão, A. Godoy Jr., A. L. J. Pereira, G. V. Martins, R. S. Pessoa, H. S. Maciel, M. A. Fraga
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Silicon carbide (SiC) is a wide band-gap semiconductor material with very attractive properties, such as high breakdown voltage, chemical inertness, and high thermal and electrical stability, which makes it a promising candidate for several applications, including microelectromechanical systems (MEMS) and electronic devices. In MEMS manufacturing, the etching process is an important step. It has been proved that wet etching of SiC is not feasible due to its high bond strength and high chemical inertness. In view of this difficulty, the plasma etching technique has been applied with paramount success. However, in most of these studies, only the determination of the etching rate and/or morphological characterization of SiC, as well as the analysis of the reactive ions present in the plasma, are lowly explored. There is a lack of results in the literature on the chemical and structural properties of SiC after the etching process [4]. In this work, we investigated the etching process of sputtered amorphous SiC thin films on Si substrates in a reactive ion etching (RIE) system using sulfur hexafluoride (SF6) gas under different RF power. The results of the chemical and structural analyses of the etched films revealed that, for all conditions, a SiC crystallization occurred, in addition to fluoride contamination. In conclusion, we observed that SiC crystallization is a side effect promoted by structural, morphological and chemical changes caused by RIE SF6 etching process.Keywords: plasma etching, plasma deposition, Silicon Carbide, microelectromechanical systems
Procedia PDF Downloads 75252 Silicon Surface Treatment Effect on the Structural, Optical, and Optoelectronic Properties for Solar Cell Applications
Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais
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Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells
Procedia PDF Downloads 448251 Cyclic Etching Process Using Inductively Coupled Plasma for Polycrystalline Diamond on AlGaN/GaN Heterostructure
Authors: Haolun Sun, Ping Wang, Mei Wu, Meng Zhang, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao
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Gallium nitride (GaN) is an attractive material for next-generation power devices. It is noted that the performance of GaN-based high electron mobility transistors (HEMTs) is always limited by the self-heating effect. In response to the problem, integrating devices with polycrystalline diamond (PCD) has been demonstrated to be an efficient way to alleviate the self-heating issue of the GaN-based HEMTs. Among all the heat-spreading schemes, using PCD to cap the epitaxial layer before the HEMTs process is one of the most effective schemes. Now, the mainstream method of fabricating the PCD-capped HEMTs is to deposit the diamond heat-spreading layer on the AlGaN surface, which is covered by a thin nucleation dielectric/passivation layer. To achieve the pattern etching of the diamond heat spreader and device preparation, we selected SiN as the hard mask for diamond etching, which was deposited by plasma-enhanced chemical vapor deposition (PECVD). The conventional diamond etching method first uses F-based etching to remove the SiN from the special window region, followed by using O₂/Ar plasma to etch the diamond. However, the results of the scanning electron microscope (SEM) and focused ion beam microscopy (FIB) show that there are lots of diamond pillars on the etched diamond surface. Through our study, we found that it was caused by the high roughness of the diamond surface and the existence of the overlap between the diamond grains, which makes the etching of the SiN hard mask insufficient and leaves micro-masks on the diamond surface. Thus, a cyclic etching method was proposed to solve the problem of the residual SiN, which was left in the F-based etching. We used F-based etching during the first step to remove the SiN hard mask in the specific region; then, the O₂/Ar plasma was introduced to etch the diamond in the corresponding region. These two etching steps were set as one cycle. After the first cycle, we further used cyclic etching to clear the pillars, in which the F-based etching was used to remove the residual SiN, and then the O₂/Ar plasma was used to etch the diamond. Whether to take the next cyclic etching depends on whether there are still SiN micro-masks left. By using this method, we eventually achieved the self-terminated etching of the diamond and the smooth surface after the etching. These results demonstrate that the cyclic etching method can be successfully applied to the integrated preparation of polycrystalline diamond thin films and GaN HEMTs.Keywords: AlGaN/GaN heterojunction, O₂/Ar plasma, cyclic etching, polycrystalline diamond
Procedia PDF Downloads 134250 SEM Analysis of the Effectiveness of the Acid Etching on Cat Enamel
Authors: C. Gallottini, W. Di Mari, C. De Carolis, A. Dolci, G. Dolci, L. Gallottini, G. Barraco, S. Eramo
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The aim of this paper is to summarize the literature on micromorphology and composition of the enamel of the cat and present an original experiment by SEM on how it responds to the etching with ortophosphoric acid for the time recommended in the veterinary literature (30", 45", 60"), derived from research and experience on human enamel; 21 teeth of cat were randomly divided into three groups of 7 (A, B, C): Group A was subjected to etching for 30 seconds by means of orthophosphoric acid to 40% on a circular area with diameter of about 2mm of the enamel coronal; the Groups B and C had the same treatment but, respectively, for 45 and 60 seconds. The samples obtained were observed by SEM to constant magnification of 1000x framing, in particular, the border area between enamel exposed and not exposed to etching to highlight differences. The images were subjected to the analysis of three blinded experienced operators in electron microscopy. In the enamel of the cat the etching for the times considered is not optimally effective for the purpose adhesives and the presence of a thick prismless layer could explain this situation. To improve this condition may clinically in the likeness of what is proposed for the enamel of human deciduous teeth: a bevel or a chamfer of 1 mm on the contour of the cavity to discover the prismatic enamel and increase the bonding surface.Keywords: cat enamel, SEM, veterinary dentistry, acid etching
Procedia PDF Downloads 307249 Nano-Texturing of Single Crystalline Silicon via Cu-Catalyzed Chemical Etching
Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker
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We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO3)2/HF/H2O2/H2O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells
Procedia PDF Downloads 154248 Anisotropic Approach for Discontinuity Preserving in Optical Flow Estimation
Authors: Pushpendra Kumar, Sanjeev Kumar, R. Balasubramanian
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Estimation of optical flow from a sequence of images using variational methods is one of the most successful approach. Discontinuity between different motions is one of the challenging problem in flow estimation. In this paper, we design a new anisotropic diffusion operator, which is able to provide smooth flow over a region and efficiently preserve discontinuity in optical flow. This operator is designed on the basis of intensity differences of the pixels and isotropic operator using exponential function. The combination of these are used to control the propagation of flow. Experimental results on the different datasets verify the robustness and accuracy of the algorithm and also validate the effect of anisotropic operator in the discontinuity preserving.Keywords: optical flow, variational methods, computer vision, anisotropic operator
Procedia PDF Downloads 873247 A Dissolution Mechanism of the Silicon Carbide in HF/K₂Cr₂O₇ Solutions
Authors: Karima Bourenane, Aissa Keffous
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In this paper, we present an experimental method on the etching reaction of p-type 6H-SiC, etching that was carried out in HF/K₂Cr₂O₇ solutions. The morphology of the etched surface was examined with varying K₂Cr₂O₇ concentrations, etching time and temperature solution. The surfaces of the etched samples were analyzed using Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Photoluminescence. The surface morphology of samples etched in HF/K₂Cr₂O₇ is shown to depend on the solution composition and bath temperature. The investigation of the HF/K₂Cr₂O₇ solutions on 6H-SiC surface shows that as K₂Cr₂O₇ concentration increases, the etch rate increases to reach a maximum value at about 0.75 M and then decreases. Similar behavior has been observed when the temperature of the solution is increased. The maximum etch rate is found for 80 °C. Taking into account the result, a polishing etching solution of 6H-SiC has been developed. In addition, the result is very interesting when, to date, no chemical polishing solution has been developed on silicon carbide (SiC). Finally, we have proposed a dissolution mechanism of the silicon carbide in HF/K₂Cr₂O₇ solutions.Keywords: silicon carbide, dissolution, Chemical etching, mechanism
Procedia PDF Downloads 52246 Speckle Noise Reduction Using Anisotropic Filter Based on Wavelets
Authors: Kritika Bansal, Akwinder Kaur, Shruti Gujral
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In this paper, the approach of denoising is solved by using a new hybrid technique which associates the different denoising methods. Wavelet thresholding and anisotropic diffusion filter are the two different filters in our hybrid techniques. The Wavelet thresholding removes the noise by removing the high frequency components with lesser edge preservation, whereas an anisotropic diffusion filters is based on partial differential equation, (PDE) to remove the speckle noise. This PDE approach is used to preserve the edges and provides better smoothing. So our new method proposes a combination of these two filtering methods which performs better results in terms of peak signal to noise ratio (PSNR), coefficient of correlation (COC) and equivalent no of looks (ENL).Keywords: denoising, anisotropic diffusion filter, multiplicative noise, speckle, wavelets
Procedia PDF Downloads 512245 Control of Oxide and Silicon Loss during Exposure of Silicon Waveguide
Authors: Gu Zhonghua
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Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio.Keywords: waveguide, etch, control, silicon loss
Procedia PDF Downloads 414244 Directional Dependence of the Stress-Strain Behavior of Reinforced Sand
Authors: Alaa H. J. Al-Rkaby, A. Chegenizadeh, H. R. Nikraz
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The technique of reinforcing soil is an efficient, reliable and cost-effective alternative way for improving the performance of soil in civil engineering applications. Despite the anisotropic states of stresses induced within soil elements by many geotechnical structures such as footings, highways and offshore, most of the previous studies have been carried out under isotropic conditions. The anisotropic stress state in term of the inclined principal stress and the inequality of the intermediate and minor principal stresses cannot be investigated using conventional devices. Therefore, the advanced hollow cylinder apparatus, used in this work, provides a great opportunity to simulate such anisotropic stress states. To date, very little consideration has been given to how the direction of principal stress α and intermediate principal stress ratio b can affect the performance of the reinforced sand. This study presented that the anisotropic conditions of α and b resulted in significant variations in the deviator stress and volumetric strain of sand reinforced with geosynthetics. Anisotropic effect has been decreased by adding clay content.Keywords: anisotropy, reinforced sand, direction of principal stress, intermediate principal stress ratio
Procedia PDF Downloads 199243 Microstructural Investigation and Fatigue Damage Quantification of Anisotropic Behavior in AA2017 Aluminum Alloy under Cyclic Loading
Authors: Abdelghani May
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This paper reports on experimental investigations concerning the underlying reasons for the anisotropic behavior observed during the cyclic loading of AA2017 aluminum alloy. Initially, we quantified the evolution of fatigue damage resulting from controlled proportional cyclic loadings along the axial and shear directions. Our primary objective at this stage was to verify the anisotropic mechanical behavior recently observed. To accomplish this, we utilized various models of fatigue damage quantification and conducted a comparative study of the obtained results. Our analysis confirmed the anisotropic nature of the material under investigation. In the subsequent step, we performed microstructural investigations aimed at understanding the origins of the anisotropic mechanical behavior. To this end, we utilized scanning electron microscopy to examine the phases and precipitates in both the transversal and longitudinal sections. Our findings indicate that the structure and morphology of these entities are responsible for the anisotropic behavior observed in the aluminum alloy. Furthermore, results obtained from Kikuchi diagrams, pole figures, and inverse pole figures have corroborated these conclusions. These findings demonstrate significant differences in the crystallographic texture of the material.Keywords: microstructural investigation, fatigue damage quantification, anisotropic behavior, AA2017 aluminum alloy, cyclic loading, crystallographic texture, scanning electron microscopy
Procedia PDF Downloads 76242 Large Strain Creep Analysis of Composite Thick-Walled Anisotropic Cylinders
Authors: Vinod Kumar Arya
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Creep analysis of a thick-walled composite anisotropic cylinder under internal pressure and considering large strains is presented. Using a threshold creep law for composite materials, expressions for stresses, strains, and strain rates are derived for several anisotropic cases. Numerical results, presented through several graphs and tables, depict the effect of anisotropy on the stress, strain, and strain rate distributions. Since for a specific type of material anisotropy described in the paper, these quantities are found to have the lowest values at the inner radius (the potential location of cylinder failure), it is concluded that by employing such an anisotropic material for the design of a thick-walled cylinder a longer service life for the cylinder may be achieved.Keywords: creep, composites, large strains, thick-walled cylinders, anisotropy
Procedia PDF Downloads 149241 Forecasting Etching Behavior Silica Sand Using the Design of Experiments Method
Authors: Kefaifi Aissa, Sahraoui Tahar, Kheloufi Abdelkrim, Anas Sabiha, Hannane Farouk
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The aim of this study is to show how the Design of Experiments Method (DOE) can be put into use as a practical approach for silica sand etching behavior modeling during its primary step of leaching. In the present work, we have studied etching effect on particle size during a primary step of leaching process on Algerian silica sand with florid acid (HF) at 20% and 30 % during 4 and 8 hours. Therefore, a new purity of the sand is noted depending on the time of leaching. This study was expanded by a numerical approach using a method of experiment design, which shows the influence of each parameter and the interaction between them in the process and approved the obtained experimental results. This model is a predictive approach using hide software. Based on the measured parameters experimentally in the interior of the model, the use of DOE method can make it possible to predict the outside parameters of the model in question and can give us the optimize response without making the experimental measurement.Keywords: acid leaching, design of experiments method(DOE), purity silica, silica etching
Procedia PDF Downloads 286240 Shear Elastic Waves in Disordered Anisotropic Multi-Layered Periodic Structure
Authors: K. B. Ghazaryan, R. A. Ghazaryan
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Based on the constitutive model and anti-plane equations of anisotropic elastic body of monoclinic symmetry we consider the problem of shear wave propagation in multi-layered disordered composite structure with point defect. Using transfer matrix method the analytic expression is obtained providing solutions of shear Floquet wave propagation in periodic disordered anisotropic structure. The usefulness of the obtained analytical expression was discussed also in reflection and refraction problems from multi-layered reflector as well as in vibration problem of multi-layered waveguides. Numerical results are presented highlighting the effects arising in disordered periodic structure due to defects of multi-layered structure.Keywords: shear elastic waves, monoclinic anisotropic media, periodic structure, disordered multilayer laminae, multi-layered waveguide
Procedia PDF Downloads 408239 Micro-Electrical Discharge Machining (µEDM): Effect of the Electrochemical Etching Parameters on the Fabrication of Cylindrical Tungsten Micro-Tools
Authors: Asmae Tafraouti, Yasmina Layouni
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The fabrication of cylindrical Tungsten micro-tools with a high aspect ratio is a real challenge because of several constraints that come into during their manufacture. In this paper, we will describe the process used to fabricate these micro-tools. It consists of using electrochemical etching. We will also present the optimal protocol that makes it possible to fabricate micro-tools with a high aspect ratio in a reproducible way. Next, we will show the limit of the experimental parameters chosen to manufacture micro-tools from a wire with an initial diameter of Φ_0=250µm. The protocol used allows obtaining an average diameter of Φ=88µm ±1 µm over a length of L=3.5mm.Keywords: drop-off effect, electrochemical etching, micro-electrical discharge machining, tungsten micro-tools
Procedia PDF Downloads 190238 Enhancement and Characterization of Titanium Surfaces with Sandblasting and Acid Etching for Dental Implants
Authors: Busra Balli, Tuncay Dikici, Mustafa Toparli
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Titanium and its alloys have been used extensively over the past 25 years as biomedical materials in orthopedic and dental applications because of their good mechanical properties, corrosion resistance, and biocompatibility. It is known that the surface properties of titanium implants can enhance the cellular response and play an important role in Osseo integration. The rate and quality of Osseo integration in titanium implants are related to their surface properties. The purpose of this investigation was to evaluate the effect of sandblasting and acid etching on surface morphology, roughness, the wettability of titanium. The surface properties will be characterized by scanning electron microscopy and contact angle and roughness measurements. The results show that surface morphology, roughness, and wettability were changed and enhanced by these treatments.Keywords: dental implant, etching, surface modifications, surface morphology, surface roughness
Procedia PDF Downloads 491237 A Nonlinear Parabolic Partial Differential Equation Model for Image Enhancement
Authors: Tudor Barbu
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We present a robust nonlinear parabolic partial differential equation (PDE)-based denoising scheme in this article. Our approach is based on a second-order anisotropic diffusion model that is described first. Then, a consistent and explicit numerical approximation algorithm is constructed for this continuous model by using the finite-difference method. Finally, our restoration experiments and method comparison, which prove the effectiveness of this proposed technique, are discussed in this paper.Keywords: anisotropic diffusion, finite differences, image denoising and restoration, nonlinear PDE model, anisotropic diffusion, numerical approximation schemes
Procedia PDF Downloads 313236 Effect of Elastic Modulus Anisotropy on Helical Piles Behavior in Sandy Soil
Authors: Reza Ziaie Moayed, Javad Shamsi Soosahab
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Helical piles are being used extensively in engineering applications all over the world. There are insufficient studies on the helical piles' behavior in anisotropic soils. In this paper, numerical modeling was adopted to investigate the effect of elastic modulus anisotropy on helical pile behavior resting on anisotropic sand by using a finite element limit analysis. The load-displacement behavior of helical piles under compression and tension loads is investigated in different relative densities of soils, and the effect of the ratio of horizontal elastic modulus with respect to vertical elastic modulus (EH/EV) is evaluated. The obtained results illustrate that in sandy soils, the anisotropic ratio of elastic modulus (EH/EV) has notable effect on bearing capacity of helical piles in different relative density. Therefore, it may be recommended that the effect of anisotropic condition of soil elastic modulus should be considered in helical piles behavior.Keywords: helical piles, bearing capacity, numerical modeling, soil anisotropy
Procedia PDF Downloads 163235 Nanoprofiling of GaAs Surface in a Combined Low-Temperature Plasma for Microwave Devices
Authors: Victor S. Klimin, Alexey A. Rezvan, Maxim S. Solodovnik, Oleg A. Ageev
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In this paper, the problems of existing methods of profiling and surface modification of nanoscale arsenide-gallium structures are analyzed. The use of a combination of methods of local anodic oxidation and plasma chemical etching to solve this problem is considered. The main features that make this technology one of the promising areas of modification and profiling of near-surface layers of solids are demonstrated. In this paper, we studied the effect of formation stress and etching time on the geometrical parameters of the etched layer and the roughness of the etched surface. Experimental dependences of the thickness of the etched layer on the time and stress of formation were obtained. The surface analysis was carried out using atomic force microscopy methods, the corresponding profilograms were constructed from the obtained images, and the roughness of the etched surface was studied accordingly. It was shown that at high formation voltage, the depth of the etched surface increased, this is due to an increase in the number of active particles (oxygen ions and hydroxyl groups) formed as a result of the decomposition of water molecules in an electric field, during the formation of oxide nanostructures on the surface of gallium arsenide. Oxide layers were used as negative masks for subsequent plasma chemical etching by the STE ICPe68 unit. BCl₃ was chosen as the chlorine-containing gas, which differs from analogs in some parameters for the effect of etching of nanostructures based on gallium arsenide in the low-temperature plasma. The gas mixture of reaction chamber consisted of a buffer gas NAr = 100 cm³/min and a chlorine-containing gas NBCl₃ = 15 cm³/min at a pressure P = 2 Pa. The influence of these methods modes, which are formation voltage and etching time, on the roughness and geometric parameters, and corresponding dependences are demonstrated. Probe nanotechnology was used for surface analysis.Keywords: nanostructures, GaAs, plasma chemical etching, modification structures
Procedia PDF Downloads 145234 Effect of Coriolis Force on Magnetoconvection in an Anisotropic Porous Medium
Authors: N. F. M. Mokhtar, N. Z. A. Hamid
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This paper reports an analytical investigation of the stability and thermal convection in a horizontal anisotropic porous medium in the presence of Coriolis force and magnetic field. The Darcy model is used in the momentum equation and Boussinesq approximation is considered for the density variation of the porous medium. The upper and lower boundaries of the porous medium are assumed to be conducting to temperature perturbation and we used first order Chebyshev polynomial Tau method to solve the resulting eigenvalue problem. Analytical solution is obtained for the case of stationary convection. It is found that the porous layer system becomes unstable when the mechanical anisotropy parameter elevated and increasing the Coriolis force and magnetic field help to stabilize the anisotropy porous medium.Keywords: anisotropic, Chebyshev tau method, Coriolis force, Magnetic field
Procedia PDF Downloads 214233 A Combination of Anisotropic Diffusion and Sobel Operator to Enhance the Performance of the Morphological Component Analysis for Automatic Crack Detection
Authors: Ankur Dixit, Hiroaki Wagatsuma
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The crack detection on a concrete bridge is an important and constant task in civil engineering. Chronically, humans are checking the bridge for inspection of cracks to maintain the quality and reliability of bridge. But this process is very long and costly. To overcome such limitations, we have used a drone with a digital camera, which took some images of bridge deck and these images are processed by morphological component analysis (MCA). MCA technique is a very strong application of sparse coding and it explores the possibility of separation of images. In this paper, MCA has been used to decompose the image into coarse and fine components with the effectiveness of two dictionaries namely anisotropic diffusion and wavelet transform. An anisotropic diffusion is an adaptive smoothing process used to adjust diffusion coefficient by finding gray level and gradient as features. These cracks in image are enhanced by subtracting the diffused coarse image into the original image and the results are treated by Sobel edge detector and binary filtering to exhibit the cracks in a fine way. Our results demonstrated that proposed MCA framework using anisotropic diffusion followed by Sobel operator and binary filtering may contribute to an automation of crack detection even in open field sever conditions such as bridge decks.Keywords: anisotropic diffusion, coarse component, fine component, MCA, Sobel edge detector and wavelet transform
Procedia PDF Downloads 173232 Microstructures of Si Surfaces Fabricated by Electrochemical Anodic Oxidation with Agarose Stamps
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This paper investigates the fabrication of microstructures on Si surfaces by using electrochemical anodic oxidation with agarose stamps. The fabricating process is based on a selective anodic oxidation reaction that occurs in the contact area between a stamp and a Si substrate. The stamp which is soaked in electrolyte previously acts as a current flow channel. After forming the oxide patterns as an etching mask, a KOH aqueous is used for the wet etching of Si. A complicated microstructure array of 1 cm2 was fabricated by the method with high accuracy.Keywords: microstructures, anodic oxidation, silicon, agarose stamps
Procedia PDF Downloads 305231 Anisotropic Total Fractional Order Variation Model in Seismic Data Denoising
Authors: Jianwei Ma, Diriba Gemechu
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In seismic data processing, attenuation of random noise is the basic step to improve quality of data for further application of seismic data in exploration and development in different gas and oil industries. The signal-to-noise ratio of the data also highly determines quality of seismic data. This factor affects the reliability as well as the accuracy of seismic signal during interpretation for different purposes in different companies. To use seismic data for further application and interpretation, we need to improve the signal-to-noise ration while attenuating random noise effectively. To improve the signal-to-noise ration and attenuating seismic random noise by preserving important features and information about seismic signals, we introduce the concept of anisotropic total fractional order denoising algorithm. The anisotropic total fractional order variation model defined in fractional order bounded variation is proposed as a regularization in seismic denoising. The split Bregman algorithm is employed to solve the minimization problem of the anisotropic total fractional order variation model and the corresponding denoising algorithm for the proposed method is derived. We test the effectiveness of theproposed method for synthetic and real seismic data sets and the denoised result is compared with F-X deconvolution and non-local means denoising algorithm.Keywords: anisotropic total fractional order variation, fractional order bounded variation, seismic random noise attenuation, split Bregman algorithm
Procedia PDF Downloads 207230 Effects of Surface Roughness on a Unimorph Piezoelectric Micro-Electro-Mechanical Systems Vibrational Energy Harvester Using Finite Element Method Modeling
Authors: Jean Marriz M. Manzano, Marc D. Rosales, Magdaleno R. Vasquez Jr., Maria Theresa G. De Leon
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This paper discusses the effects of surface roughness on a cantilever beam vibrational energy harvester. A silicon sample was fabricated using MEMS fabrication processes. When etching silicon using deep reactive ion etching (DRIE) at large etch depths, rougher surfaces are observed as a result of increased response in process pressure, amount of coil power and increased helium backside cooling readings. To account for the effects of surface roughness on the characteristics of the cantilever beam, finite element method (FEM) modeling was performed using actual roughness data from fabricated samples. It was found that when etching about 550um of silicon, root mean square roughness parameter, Sq, varies by 1 to 3 um (at 100um thick) across a 6-inch wafer. Given this Sq variation, FEM simulations predict an 8 to148 Hz shift in the resonant frequency while having no significant effect on the output power. The significant shift in the resonant frequency implies that careful consideration of surface roughness from fabrication processes must be done when designing energy harvesters.Keywords: deep reactive ion etching, finite element method, microelectromechanical systems, multiphysics analysis, surface roughness, vibrational energy harvester
Procedia PDF Downloads 121229 Remarks on the Lattice Green's Function for the Anisotropic Face Cantered Cubic Lattice
Authors: Jihad H. Asad
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An expression for the Green’s function (GF) of anisotropic face cantered cubic (IFCC) lattice is evaluated analytically and numerically for a single impurity problem. The density of states (DOS), phase shift and scattering cross section are expressed in terms of complete elliptic integrals of the first kind.Keywords: lattice Green's function, elliptic integral, physics, cubic lattice
Procedia PDF Downloads 466