Search results for: Coralie Pasquier
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2

Search results for: Coralie Pasquier

2 Nanometric Sized Ions for Colloidal Stabilization

Authors: Pierre Bauduin, Coralie Pasquier, Alban Jonchere, Luc Girard, Olivier Diat

Abstract:

Ionic species, such as polyoxometalates (POMs) or (metal-) boron clusters, are at the frontier between ions and (charged-)colloids due to their nm size. We show here that the large size and low charge density of POMs, compared to classical ions, are responsible for a peculiar behavior called “super-chaotropy”. This property refers to the strong propensity of nano-ions to adsorb at neutral polar interfaces, via non-specific interactions. It has strong effects on phase transitions in soft matter and can, for example, stabilize colloidal systems such as surfactant foams. A simple way for evaluating and classifying nano-ions, such as POMs, according to their super-chaotropy is proposed here. The super-chaotropic behavior of nano-ions opens many opportunities in separation science, catalysis, and for the design of nanostructured hybrid materials.

Keywords: colloids, foams, surfactant, salt effect, colloidal stability, nano-ions

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1 Effects of Voltage Pulse Characteristics on Some Performance Parameters of LiₓCoO₂-based Resistive Switching Memory Devices

Authors: Van Son Nguyen, Van Huy Mai, Alec Moradpour, Pascale Auban Senzier, Claude Pasquier, Kang Wang, Pierre-Antoine Albouy, Marcelo J. Rozenberg, John Giapintzakis, Christian N. Mihailescu, Charis M. Orfanidou, Thomas Maroutian, Philippe Lecoeur, Guillaume Agnus, Pascal Aubert, Sylvain Franger, Raphaël Salot, Nathalie Brun, Katia March, David Alamarguy, Pascal ChréTien, Olivier Schneegans

Abstract:

In the field of Nanoelectronics, a major research activity is being developed towards non-volatile memories. To face the limitations of existing Flash memory cells (endurance, downscaling, rapidity…), new approaches are emerging, among them resistive switching memories (Re-RAM). In this work, we analysed the behaviour of LixCoO2 oxide thin films in electrode/film/electrode devices. Preliminary results have been obtained concerning the influence of bias pulses characteristics (duration, value) on some performance parameters, such as endurance and resistance ratio (ROFF/RON). Besides, Conducting Probe Atomic Force Microscopy (CP-AFM) characterizations of the devices have been carried out to better understand some causes of performance failure, and thus help optimizing the switching performance of such devices.

Keywords: non volatile resistive memories, resistive switching, thin films, endurance

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