Search results for: white etching layer

Authors: A. Al-Juboori, D. Wexler, H. Li, H. Zhu, C. Lu, A. McCusker, J. McLeod, S. Pannila, Z. Wang

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Squats are a type railhead defect related to rolling contact fatigue (RCF) damage and are considered serious problem affecting a wide range of railway networks across the world. Squats can lead to partial or complete rail failure. Formation mechanics of squats on the surface of rail steel is still a matter of debate. In this work, structural and microstructural observations from ex-service damaged rail both confirms the phases present in white etching layer (WEL) regions and relationship between cracking in WEL and squat defect formation. XRD synchrotron results obtained from the top surfaces of rail regions containing both WEL and squat defects reveal that these regions contain both martensite and retained austenite. Microstructural analysis of these regions revealed the occurrence cracks extending from WEL down into the rail through the squat region. These findings obtained from field rail specimen support the view that WEL contains regions of austenite and martensitic transformation product, and that cracks in this brittle surface layer propagate deeper into the rail as squats originate and grow.

Keywords: squat, white etching layer, rolling contact fatigue, synchrotron diffraction

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Authors: Ali Ahmed Ali Al-Juboori, H. Zhu, D. Wexler, H. Li, C. Lu, J. McLeod, S. Pannila, J. Barnes

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A number of studies have focused on the formation mechanics of white etching layer and its origin in the railway operation. Until recently, the following hypotheses consider the precise mechanics of WELs formation: (i) WELs are the result of thermal process caused by wheel slip; (ii) WELs are mechanically induced by severe plastic deformation; (iii) WELs are caused by a combination of thermo-mechanical process. The mechanisms discussed above lead to occurrence of white etching layers on the area of wheel and rail contact. This is because the contact patch which is the active point of the wheel on the rail is exposed to highest shear stresses which result in localised severe plastic deformation; and highest rate of heat caused by wheel slipe during excessive traction or braking effort. However, if the WELs are not on the running band area, it would suggest that there is another cause of WELs formation. In railway system, particularly electrified railway, arcing phenomenon has been occurring more often and regularly on the rails. In electrified railway, the current is delivered to the train traction motor via contact wires and then returned to the station via the contact between the wheel and the rail. If the contact between the wheel and the rail is temporarily losing, due to dynamic vibration, entrapped dirt or water, lubricant effect or oxidation occurrences, high current can jump through the gap and results in arcing. The other resources of arcing also include the wheel passage the insulated joint and lightning on a train during bad weather. During the arcing, an extensive heat is generated and speared over a large area of top surface of rail. Thus, arcing is considered another heat source in the rail head (rather than wheel slipe) that results in microstructural changes and white etching layer formation. A head hardened (HH) rail steel, cut from a curved rail truck was used for the investigation. Samples were sectioned from a depth of 10 mm below the rail surface, where the material is considered to be still within the hardened layer but away from any microstructural changes on the top surface layer caused by train passage. These samples were subjected to electrical discharges by using Gas Tungsten Arc Welding (GTAW) machine. The arc current was controlled and moved along the samples surface in the direction of travel, as indicated by an arrow. Five different conditions were applied on the surface of the samples. Samples containing pre-existed WELs, taken from ex-service rail surface, were also considered in this study for comparison. Both simulated and ex-serviced WELs were characterised by advanced methods including SEM, TEM, TKD, EDS, XRD. Samples for TEM and TKFD were prepared by Focused Ion Beam (FIB) milling. The results showed that both simulated WELs by electrical arcing and ex-service WEL comprise similar microstructure. Brown etching layer was found with WELs and likely induced by a concurrent tempering process. This study provided a clear understanding of new formation mechanics of WELs which contributes to track maintenance procedure.

Keywords: white etching layer, arcing, brown etching layer, material characterisation

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Authors: ByungJun Woo

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In this study, high-aspect-ratio (HAR) oxide etching characteristics in inductively coupled plasma were investigated using low frequency (2 MHz) bias power with C4F6 gas. An experiment was conducted using CF4/C4F6/He as the mixed gas. A 100 nm (etch area)/500 nm (mask area) line patterns were used, and the etch cross-section and etch selectivity of the amorphous carbon layer thin film were derived using a scanning electron microscope. Ion density was extracted using a double Langmuir probe, and CFx and F neutral species were observed via optical emission spectroscopy. Based on these results, the possibility for HAR oxide etching using C4F6 gas chemistry was suggested in this work. These etching results also indicate that the use of C4F6 gas can significantly contribute to the development of next-generation HAR oxide etching.

Keywords: plasma, etching, C4F6, high aspect ratio, inductively coupled plasma

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Authors: Haolun Sun, Ping Wang, Mei Wu, Meng Zhang, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao

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Gallium nitride (GaN) is an attractive material for next-generation power devices. It is noted that the performance of GaN-based high electron mobility transistors (HEMTs) is always limited by the self-heating effect. In response to the problem, integrating devices with polycrystalline diamond (PCD) has been demonstrated to be an efficient way to alleviate the self-heating issue of the GaN-based HEMTs. Among all the heat-spreading schemes, using PCD to cap the epitaxial layer before the HEMTs process is one of the most effective schemes. Now, the mainstream method of fabricating the PCD-capped HEMTs is to deposit the diamond heat-spreading layer on the AlGaN surface, which is covered by a thin nucleation dielectric/passivation layer. To achieve the pattern etching of the diamond heat spreader and device preparation, we selected SiN as the hard mask for diamond etching, which was deposited by plasma-enhanced chemical vapor deposition (PECVD). The conventional diamond etching method first uses F-based etching to remove the SiN from the special window region, followed by using O₂/Ar plasma to etch the diamond. However, the results of the scanning electron microscope (SEM) and focused ion beam microscopy (FIB) show that there are lots of diamond pillars on the etched diamond surface. Through our study, we found that it was caused by the high roughness of the diamond surface and the existence of the overlap between the diamond grains, which makes the etching of the SiN hard mask insufficient and leaves micro-masks on the diamond surface. Thus, a cyclic etching method was proposed to solve the problem of the residual SiN, which was left in the F-based etching. We used F-based etching during the first step to remove the SiN hard mask in the specific region; then, the O₂/Ar plasma was introduced to etch the diamond in the corresponding region. These two etching steps were set as one cycle. After the first cycle, we further used cyclic etching to clear the pillars, in which the F-based etching was used to remove the residual SiN, and then the O₂/Ar plasma was used to etch the diamond. Whether to take the next cyclic etching depends on whether there are still SiN micro-masks left. By using this method, we eventually achieved the self-terminated etching of the diamond and the smooth surface after the etching. These results demonstrate that the cyclic etching method can be successfully applied to the integrated preparation of polycrystalline diamond thin films and GaN HEMTs.

Keywords: AlGaN/GaN heterojunction, O₂/Ar plasma, cyclic etching, polycrystalline diamond

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Authors: Alonggot Limcharoen Kaeochotchuangkul, Pathomporn Sawatchai

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This research aims to design and build a wet etching system, which is suitable for anisotropic wet etching, in order to reduce etching time, to reduce hillocks on the etched surface (to reduce roughness), and to create a 45-degree wall angle (micro-mirror). This study would start by designing a wet etching system. There are four main components in this system: an ultrasonic cleaning, a condenser, a motor and a substrate holder. After that, an ultrasonic machine was modified by applying a condenser to maintain the consistency of the solution concentration during the etching process and installing a motor for improving the roughness. This effect on the etch rate and the roughness showed that the etch rate increased and the roughness was reduced.

Keywords: anisotropic wet etching, wet etching system, hillocks, ultrasonic cleaning

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Authors: C. Gallottini, W. Di Mari, C. De Carolis, A. Dolci, G. Dolci, L. Gallottini, G. Barraco, S. Eramo

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The aim of this paper is to summarize the literature on micromorphology and composition of the enamel of the cat and present an original experiment by SEM on how it responds to the etching with ortophosphoric acid for the time recommended in the veterinary literature (30", 45", 60"), derived from research and experience on human enamel; 21 teeth of cat were randomly divided into three groups of 7 (A, B, C): Group A was subjected to etching for 30 seconds by means of orthophosphoric acid to 40% on a circular area with diameter of about 2mm of the enamel coronal; the Groups B and C had the same treatment but, respectively, for 45 and 60 seconds. The samples obtained were observed by SEM to constant magnification of 1000x framing, in particular, the border area between enamel exposed and not exposed to etching to highlight differences. The images were subjected to the analysis of three blinded experienced operators in electron microscopy. In the enamel of the cat the etching for the times considered is not optimally effective for the purpose adhesives and the presence of a thick prismless layer could explain this situation. To improve this condition may clinically in the likeness of what is proposed for the enamel of human deciduous teeth: a bevel or a chamfer of 1 mm on the contour of the cavity to discover the prismatic enamel and increase the bonding surface.

Keywords: cat enamel, SEM, veterinary dentistry, acid etching

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Authors: B. Bouktif, M. Gaidi, M. Benrabha

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Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper.

Keywords: semiconductor nanostructure, chemical etching, optoelectronic property, silicon surface

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Authors: Gu Zhonghua

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Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio.

Keywords: waveguide, etch, control, silicon loss

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Authors: V. Swarnalatha, A. V. Narasimha Rao, P. Pal

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The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH₂OH) are used as main etchant and additive, respectively. The concentration of NH₂OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.

Keywords: KOH, MEMS, micromachining, silicon, TMAH, wet anisotropic etching

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Authors: N. K. A. M. Galvão, A. Godoy Jr., A. L. J. Pereira, G. V. Martins, R. S. Pessoa, H. S. Maciel, M. A. Fraga

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Silicon carbide (SiC) is a wide band-gap semiconductor material with very attractive properties, such as high breakdown voltage, chemical inertness, and high thermal and electrical stability, which makes it a promising candidate for several applications, including microelectromechanical systems (MEMS) and electronic devices. In MEMS manufacturing, the etching process is an important step. It has been proved that wet etching of SiC is not feasible due to its high bond strength and high chemical inertness. In view of this difficulty, the plasma etching technique has been applied with paramount success. However, in most of these studies, only the determination of the etching rate and/or morphological characterization of SiC, as well as the analysis of the reactive ions present in the plasma, are lowly explored. There is a lack of results in the literature on the chemical and structural properties of SiC after the etching process [4]. In this work, we investigated the etching process of sputtered amorphous SiC thin films on Si substrates in a reactive ion etching (RIE) system using sulfur hexafluoride (SF6) gas under different RF power. The results of the chemical and structural analyses of the etched films revealed that, for all conditions, a SiC crystallization occurred, in addition to fluoride contamination. In conclusion, we observed that SiC crystallization is a side effect promoted by structural, morphological and chemical changes caused by RIE SF6 etching process.

Keywords: plasma etching, plasma deposition, Silicon Carbide, microelectromechanical systems

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Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais

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Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.

Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells

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Authors: Victor S. Klimin, Alexey A. Rezvan, Maxim S. Solodovnik, Oleg A. Ageev

Abstract:

In this paper, the problems of existing methods of profiling and surface modification of nanoscale arsenide-gallium structures are analyzed. The use of a combination of methods of local anodic oxidation and plasma chemical etching to solve this problem is considered. The main features that make this technology one of the promising areas of modification and profiling of near-surface layers of solids are demonstrated. In this paper, we studied the effect of formation stress and etching time on the geometrical parameters of the etched layer and the roughness of the etched surface. Experimental dependences of the thickness of the etched layer on the time and stress of formation were obtained. The surface analysis was carried out using atomic force microscopy methods, the corresponding profilograms were constructed from the obtained images, and the roughness of the etched surface was studied accordingly. It was shown that at high formation voltage, the depth of the etched surface increased, this is due to an increase in the number of active particles (oxygen ions and hydroxyl groups) formed as a result of the decomposition of water molecules in an electric field, during the formation of oxide nanostructures on the surface of gallium arsenide. Oxide layers were used as negative masks for subsequent plasma chemical etching by the STE ICPe68 unit. BCl₃ was chosen as the chlorine-containing gas, which differs from analogs in some parameters for the effect of etching of nanostructures based on gallium arsenide in the low-temperature plasma. The gas mixture of reaction chamber consisted of a buffer gas NAr = 100 cm³/min and a chlorine-containing gas NBCl₃ = 15 cm³/min at a pressure P = 2 Pa. The influence of these methods modes, which are formation voltage and etching time, on the roughness and geometric parameters, and corresponding dependences are demonstrated. Probe nanotechnology was used for surface analysis.

Keywords: nanostructures, GaAs, plasma chemical etching, modification structures

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Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker

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We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO₃)₂/HF/H₂O₂/H₂O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.

Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells

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Authors: Anil Kawan, Soon Jae Yu, Jong Min Park

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GaN-based 365 nm wavelength ultraviolet (UV) light emitting diodes (LED) have various applications: curing, molding, purification, deodorization, and disinfection etc. However, their usage is limited by very low output power, because of the light absorption in the GaN layers. In this study, we demonstrate a method utilizing removal of 365 nm absorption layer buffer GaN and thinning the n-type GaN so as to improve the light extraction efficiency of the GaN-based 365 nm UV LED. The UV flip chip LEDs of chip size 1.3 mm x 1.3 mm were fabricated using GaN epilayers on a sapphire substrate. Via-hole n-type contacts and highly reflective Ag metal were used for efficient light extraction. LED wafer was aligned and bonded to AlN carrier wafer. To improve the extraction efficiency of the flip chip LED, sapphire substrate and absorption layer buffer GaN were removed by using laser lift-off and dry etching, respectively. To further increase the extraction efficiency of the LED, exposed n-type GaN thickness was reduced by using inductively coupled plasma etching.

Keywords: extraction efficiency, light emitting diodes, n-GaN thinning, ultraviolet

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Authors: Lenka Hurtalová, Eva Tillová, Mária Chalupová, Juraj Belan, Milan Uhríčik

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The secondary alloy A226 is used for many automotive casting produced by mould casting and high pressure die-casting. This alloy has excellent castability, good mechanical properties and cost-effectiveness. Production of primary aluminium alloys belong to heavy source fouling of life environs. The European Union calls for the emission reduction and reduction in energy consumption, therefore, increase production of recycled (secondary) aluminium cast alloys. The contribution is deal with influence of recycling on the quality of the casting made from A226 in automotive industry. The properties of the casting made from secondary aluminium alloys were compared with the required properties of primary aluminium alloys. The effect of recycling on microstructure was observed using combination different analytical techniques (light microscopy upon black-white etching, scanning electron microscopy-SEM upon deep etching and energy dispersive X-ray analysis-EDX). These techniques were used for the identification of the various structure parameters, which was used to compare secondary alloy microstructure with primary alloy microstructure.

Keywords: A226 secondary aluminium alloy, deep etching, mechanical properties, recycling foundry aluminium alloy

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Authors: Bryan D. Llenarizas, Maria Carla F. Manzano

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The rapid growth of electricity demand has led to a pursuit of alternative energy sources with high power output and not harmful to the environment. The fuel cell is a device that generates electricity via chemical reactions between the fuel and oxidant. Fuel cells have been known for decades, but the development of high-power output and durability was still one of the drawbacks of this energy source. This study investigates the potential of layer-by-layer composite for fuel cell applications. A two-electrode electrochemical cell was used for the galvanostatic electrochemical deposition method to fabricate a Polypyrrole/rGO|Polypyrrole/ZnO layer-by-layer composite material for fuel cell applications. In the synthesis, the first layer comprised 0.1M pyrrole monomer and 1mg of rGO, while the second layer had 0.1M pyrrole monomer and variations of ZnO concentration ranging from 0.08M up to 0.12M. A constant current density of 8mA/cm² was applied for 1 hour in fabricating each layer. Scanning electron microscopy (SEM) for the fabricated LBL material shows a globular surface with white spots. These white spots are the ZnO particles confirmed by energy-dispersive X-ray spectroscopy, indicating a successful deposition of the second layer onto the first layer. The observed surface morphology was consistent for each variation of ZnO concentrations. AC measurements were conducted to obtain the AC resistance of the fabricated film. Results show a decrease in AC resistance as the concentration of ZnO increases.

Keywords: anode, composite material, electropolymerization, fuel cell, galvanostatic, polypyrrole

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Authors: Karima Bourenane, Aissa Keffous

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In this paper, we present an experimental method on the etching reaction of p-type 6H-SiC, etching that was carried out in HF/K₂Cr₂O₇ solutions. The morphology of the etched surface was examined with varying K₂Cr₂O₇ concentrations, etching time and temperature solution. The surfaces of the etched samples were analyzed using Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Photoluminescence. The surface morphology of samples etched in HF/K₂Cr₂O₇ is shown to depend on the solution composition and bath temperature. The investigation of the HF/K₂Cr₂O₇ solutions on 6H-SiC surface shows that as K₂Cr₂O₇ concentration increases, the etch rate increases to reach a maximum value at about 0.75 M and then decreases. Similar behavior has been observed when the temperature of the solution is increased. The maximum etch rate is found for 80 °C. Taking into account the result, a polishing etching solution of 6H-SiC has been developed. In addition, the result is very interesting when, to date, no chemical polishing solution has been developed on silicon carbide (SiC). Finally, we have proposed a dissolution mechanism of the silicon carbide in HF/K₂Cr₂O₇ solutions.

Keywords: silicon carbide, dissolution, Chemical etching, mechanism

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Authors: W. J. Stępniowski, W. Florkiewicz, M. Norek, M. Michalska-Domańska, E. Kościuczyk, T. Czujko

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In this paper, two options of anodic alumina barrier layer thinning have been demonstrated. The approaches varied with the duration of the voltage step. It was found that too long step of the barrier layer thinning process leads to chemical etching of the nanopores on their top. At the bottoms pores are not fully opened what is disadvantageous for further applications in nanofabrication. On the other hand, while the duration of the voltage step is controlled by the current density (value of the current density cannot exceed 75% of the value recorded during previous voltage step) the pores are fully opened. However, pores at the bottom obtained with this procedure have smaller diameter, nevertheless this procedure provides electric contact between the bare aluminum (substrate) and electrolyte, what is suitable for template assisted electrodeposition, one of the most cost-efficient synthesis method in nanotechnology.

Keywords: anodic aluminum oxide, anodization, barrier layer thinning, nanopores

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Authors: Kyoungok Jung, Chang Hong Bak, Gyeong Cheon Jo, Jin-Baek Kim

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Nanostructured arrays have drawn extensive attention because of their unique properties resulting from nanoscale features. However, it is difficult to achieve uniform and freestanding 1D nanostrcutures over a large area. Here, a simple and novel method was developed for fabrication of universal nanoporous templates for high-density nanostructure arrays, by combining self-assembly of a Si-containing block copolymer with a bilayer lithography system. We introduced a dually responsive photoresist bottom layer into which the nanopatterns of block copolymer are transferred by oxygen reactive ion etching. Because the dually responsive layer becomes cross-linked by heating, it can be used as a hard template during the etching process. It becomes soluble again by chain scission upon exposure to light. Therefore, it can be easily removed by the lift-off process. The template was applicable to the various conducting substrates due to the compatibility of the photoresist with a wide range of substrates and was used in electrodeposition for well-aligned and high-density inorganic and organic nanoarrays. We successfully obtained vertically aligned and highly ordered gold nanorods and polypyrrole dots on the substrate without aggregation, and these arrays did not collapse after removing the dually responsive templates by the simple lift-off process.

Keywords: block copolymer, dually responsive, nanostructure, photoresist

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Authors: Kefaifi Aissa, Sahraoui Tahar, Kheloufi Abdelkrim, Anas Sabiha, Hannane Farouk

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The aim of this study is to show how the Design of Experiments Method (DOE) can be put into use as a practical approach for silica sand etching behavior modeling during its primary step of leaching. In the present work, we have studied etching effect on particle size during a primary step of leaching process on Algerian silica sand with florid acid (HF) at 20% and 30 % during 4 and 8 hours. Therefore, a new purity of the sand is noted depending on the time of leaching. This study was expanded by a numerical approach using a method of experiment design, which shows the influence of each parameter and the interaction between them in the process and approved the obtained experimental results. This model is a predictive approach using hide software. Based on the measured parameters experimentally in the interior of the model, the use of DOE method can make it possible to predict the outside parameters of the model in question and can give us the optimize response without making the experimental measurement.

Keywords: acid leaching, design of experiments method(DOE), purity silica, silica etching

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Authors: Sami Iqbal, Azam Hussain, Weiping Wu, Guo Xinli, Tong Zhang

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A novel octagonal upright micro-pyramid structure was generated by wet chemical anisotropic etching on a monocrystalline silicon wafer (100). The primary objectives are to reduce front surface reflectance of silicon wafers, improve wettability, enhance surface morphology, and maximize the area coverage by generated octagonal pyramids. Under rigorous control and observation, the etching process' response time was maintained precisely. The experimental outcomes show a significant decrease in the optical surface reflectance of silicon wafers, with the lowest reflectance of 8.98%, as well as enhanced surface structure, periodicity, and surface area coverage of more than 85%. The octagonal silicon pyramid was formed with a high etch rate of 0.41 um/min and a much shorter reaction time with the addition of hydrofluoric acid coupled with magnetic stirring (mechanical agitation) at 300 rpm.

Keywords: octagonal pyramids, rapid etching, solar cells, surface engineering, surface reflectance

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Authors: Deb Kumar Shah, M. Shaheer Akhtar, Ha Ryeon Lee, O-Bong Yang, Chong Yeal Kim

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The crystalline silicon (Si) solar cells are highly renowned photovoltaic technology and well-established as the commercial solar technology. Most of the solar panels are globally installed with the crystalline Si solar modules. At the present scenario, the major photovoltaic (PV) market is shared by c-Si solar cells, but the cost of c-Si panels are still very high as compared with the other PV technology. In order to reduce the cost of Si solar panels, few necessary steps such as low-cost Si manufacturing, cheap antireflection coating materials, inexpensive solar panel manufacturing are to be considered. It is known that the antireflection (AR) layer in c-Si solar cell is an important component to reduce Fresnel reflection for improving the overall conversion efficiency. Generally, Si wafer exhibits the 30% reflection because it normally poses the two major intrinsic drawbacks such as; the spectral mismatch loss and the high Fresnel reflection loss due to the high contrast of refractive indices between air and silicon wafer. In recent years, researchers and scientists are highly devoted to a lot of researches in the field of searching effective and low-cost AR materials. Silicon nitride (SiNx) is well-known AR materials in commercial c-Si solar cells due to its good deposition and interaction with passivated Si surfaces. However, the deposition of SiNx AR is usually performed by expensive plasma enhanced chemical vapor deposition (PECVD) process which could have several demerits like difficult handling and damaging the Si substrate by plasma when secondary electrons collide with the wafer surface for AR coating. It is very important to explore new, low cost and effective AR deposition process to cut the manufacturing cost of c-Si solar cells. One can also be realized that a nano-texturing process like the growth of nanowires, nanorods, nanopyramids, nanopillars, etc. on Si wafer can provide a low reflection on the surface of Si wafer based solar cells. The above nanostructures might be enhanced the antireflection property which provides the larger surface area and effective light trapping. In this work, we report on the development of crystalline Si solar cells without using the AR layer. The Silicon wafer was modified by growing nanowires like Si nanostructures using the wet controlled etching method and directly used for the fabrication of Si solar cell without AR. The nanostructures over Si wafer were optimized in terms of sizes, lengths, and densities by changing the etching conditions. Well-defined and aligned wires like structures were achieved when the etching time is 20 to 30 min. The prepared Si nanostructured displayed the minimum reflectance ~1.64% at 850 nm with the average reflectance of ~2.25% in the wavelength range from 400-1000 nm. The nanostructured Si wafer based solar cells achieved the comparable power conversion efficiency in comparison with c-Si solar cells with SiNx AR layer. From this study, it is confirmed that the reported method (controlled wet etching) is an easy, facile method for preparation of nanostructured like wires on Si wafer with low reflectance in the whole visible region, which has greater prospects in developing c-Si solar cells without AR layer at low cost.

Keywords: chemical etching, conversion efficiency, silicon nanostructures, silicon solar cells, surface modification

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Authors: Malihe Moeinin, Robert Hill, Ferranti Wong

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Background: A white spot lesion (WSL) is defined as subsurface enamel porosity from carious demineralisation on the smooth surfaces of the tooth. It appears as a milky white opacity. Lesions shown an apparently intact surface layer, followed underneath by the more porous lesion body. The small pores within the body of the lesion act as diffusion pathway for both acids and minerals, so allowing the demineralisation of enamel to occur at the advancing front of the lesion. Objectives: The objective is to mapthe porosity and its size on WSL with Focused Ion Bean- Scanning Electron Microscopy (FIB-SEM) Method: The basic method used for FIB-SEM consisted of depositing a one micron thick layer of platinum over 25μmx 25μm of the interest region of enamel. Then, making a rough cut (25μmx 5μmx 20μm) with 3nA current and 30Kv was applied with the help of drift suppression (DS), using a standard “cross-sectional” cutting pattern, which ended at the front of the deposited platinum layer. Two adjacent areas (25μmx 5μmx 20μm) on the both sides of the platinum layer were milled under the same conditions. Subsequent, cleaning cross-sections were applied to polish the sub-surface edge of interest running perpendicular to the surface. The "slice and view" was carried out overnight for milling almost 700 slices with 2Kv and 4nA and taking backscattered (BS) images. Then, images were imported into imageJ and analysed. Results: The prism structure is clearly apparent on FIB-SEM slices of WSL with the dissolution of prism boundaries as well as internal porosity within the prism itself. Porosity scales roughly 100-400nm, which is comparable to the light wavelength (500nm). Conclusion: FIB-SEM is useful to characterize the porosity of WSL and it clearly shows the difference between WSL and normal enamel.

Keywords: white spot lesion, FIB-SEM, enamel porosity, porosity

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Authors: Asmae Tafraouti, Yasmina Layouni

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The fabrication of cylindrical Tungsten micro-tools with a high aspect ratio is a real challenge because of several constraints that come into during their manufacture. In this paper, we will describe the process used to fabricate these micro-tools. It consists of using electrochemical etching. We will also present the optimal protocol that makes it possible to fabricate micro-tools with a high aspect ratio in a reproducible way. Next, we will show the limit of the experimental parameters chosen to manufacture micro-tools from a wire with an initial diameter of Φ_0=250µm. The protocol used allows obtaining an average diameter of Φ=88µm ±1 µm over a length of L=3.5mm.

Keywords: drop-off effect, electrochemical etching, micro-electrical discharge machining, tungsten micro-tools

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Authors: Busra Balli, Tuncay Dikici, Mustafa Toparli

Abstract:

Titanium and its alloys have been used extensively over the past 25 years as biomedical materials in orthopedic and dental applications because of their good mechanical properties, corrosion resistance, and biocompatibility. It is known that the surface properties of titanium implants can enhance the cellular response and play an important role in Osseo integration. The rate and quality of Osseo integration in titanium implants are related to their surface properties. The purpose of this investigation was to evaluate the effect of sandblasting and acid etching on surface morphology, roughness, the wettability of titanium. The surface properties will be characterized by scanning electron microscopy and contact angle and roughness measurements. The results show that surface morphology, roughness, and wettability were changed and enhanced by these treatments.

Keywords: dental implant, etching, surface modifications, surface morphology, surface roughness

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Authors: Morteza Habibi, Reza Amrollahi

Abstract:

The Aluminum made targets were placed at the central part of a Fillipov type (90KJ) plasma focus cathode. These targets were exposed to perpendicular dense plasma stream incidence. Melt layer erosion by melt motion, surface smoothing, and bubble formation were some of different effects caused by diverse working conditions. Micro hardness of surface layer tends to decrease particularly in the central region of the sample where destruction is more intense. The most pronouced melt motion is registered in the region of the maximum gradient of pressure and the etching of aluminium surface is noticeable in the central part of target. The crater with a maximum depth of 200µm, and the diameter of about 8.5mm is observed close to the mountains. Adding Krypton admixture to the Deuterium gas lead to collapsing bubbles and greater surface damage.

Keywords: fillipov type plasma focus, al target interaction, bubbling effect, melt layer motion, surface smoothing

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Authors: Tahra Elobeid, Emmerich Berghofer

Abstract:

The aim of this study is to find innovative approaches for the production of iron rich foods using natural iron sources. The vehicle used for fortification was sorghum whereas the iron fortificant was white bean. Fortified sorghum cookies were produced from five different mixtures; iron content, iron bioavailability, cookie texture and acceptability were measured. Cookies were prepared from the three fortified flours; 90% sorghum + 10% white bean (S9WB1), 75% sorghum + 25% white bean (S3WB1), 50% sorghum + 50% white bean (S1WB1) and 100% sorghum and 100% white bean. The functional properties gave good results in all the formulations. Statistical analysis of the iron content in the five different cookies showed that there was significant difference at the 95% confidence level (ANOVA). The iron content in all the recipes including the 100% sorghum improved, the increase ranging from 112% in 100% sorghum cookies to 476% in 100% white bean cookies. This shows that the increase in the amount of white bean used for fortification leads to the improvement of the iron content of cookies. The bioavailability of iron ranged from 21.3% in 100% sorghum to 28.6% in 100% white bean cookies. In the 100% sorghum cookies the iron bioavailability increased with reference to raw sorghum due to the addition of eggs. Bioavailability of iron in raw sorghum is 16.2%, therefore the percentage increase ranged from 5.1% to 28.6%. The cookies prepared from 10% white bean (S9WB1) scored the lowest 3.7 in terms of acceptability. They were the least preferred due to their somewhat soft texture. The 30% white bean cookies (S3WB1) gave results comparable to the 50% (S1WB1) and 100% white bean cookies. Cookies prepared with high percentage of white bean (50% and 100% white bean) gave the best results. Therefore cookie formulations from sorghum and white bean are successful in improving the iron status of anaemic individuals.

Keywords: sorghum, white bean, iron content, bioavailable iron, cookies

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Authors: Onur Onder, Celal Tanuca, Mahir Ozil, Halil Sen, Alkım Ozkan, Engin Ceylan, Ali Istek, Ozgur Saglam

Abstract:

White balance adjustment of LCD TVs is an important procedure which has a direct influence on quality perception. Existing methods adjust RGB gain and offset values in different white levels during production. This paper suggests an iterative method in which the gamma is pre-adjusted during the design stage, and only 80% white is adjusted during production by modifying only RGB gain values (offset values are not modified). This method reduces the white balance adjustment time, contributing to the total efficiency of the production. Experiment shows that the adjustment results are well within requirements.

Keywords: color temperature, LCD panel deviation, LCD TV manufacturing, white balance

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Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

Abstract:

Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: anodic bonding, evaporated glass, flow control valve, drug delivery

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Authors: Hang Zhou, Limin Zhu

Abstract:

This paper investigates the fabrication of microstructures on Si surfaces by using electrochemical anodic oxidation with agarose stamps. The fabricating process is based on a selective anodic oxidation reaction that occurs in the contact area between a stamp and a Si substrate. The stamp which is soaked in electrolyte previously acts as a current flow channel. After forming the oxide patterns as an etching mask, a KOH aqueous is used for the wet etching of Si. A complicated microstructure array of 1 cm2 was fabricated by the method with high accuracy.

Keywords: microstructures, anodic oxidation, silicon, agarose stamps

Procedia PDF Downloads 305