@article{(Open Science Index):https://publications.waset.org/pdf/10007274,
	  title     = {A Physically-Based Analytical Model for Reduced Surface Field Laterally Double Diffused MOSFETs},
	  author    = {M. Abouelatta and  A. Shaker and  M. El-Banna and  G. T. Sayah and  C. Gontrand and  A. Zekry},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain.
},
	    journal   = {International Journal of Energy and Power Engineering},
	  volume    = {11},
	  number    = {6},
	  year      = {2017},
	  pages     = {683 - 689},
	  ee        = {https://publications.waset.org/pdf/10007274},
	  url   	= {https://publications.waset.org/vol/126},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 126, 2017},
	}