Search results for: Israr ul Haque

Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 380

Authors: Muhibul Haque Bhuyan, Farseem Mannan Mohammedy, Quazi Deen Mohd Khosru

Abstract:

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Scanning Capacitance Microscope, Atomic Force Microscope.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2012

Authors: Farzana Yasmeen, Md. Nurul Huda, Md. Enamul Haque, Michihiro Aoki, Shigeki Yamada

Abstract:

Delay-Tolerant Networks (DTNs) are sparse, wireless networks where disconnections are common due to host mobility and low node density. The Message Ferrying (MF) scheme is a mobilityassisted paradigm to improve connectivity in DTN-like networks. A ferry or message ferry is a special node in the network which has a per-determined route in the deployed area and relays messages between mobile hosts (MHs) which are intermittently connected. Increased contact opportunities among mobile hosts and the ferry improve the performance of the network, both in terms of message delivery ratio and average end-end delay. However, due to the inherent mobility of mobile hosts and pre-determined periodicity of the message ferry, mobile hosts may often -miss- contact opportunities with a ferry. In this paper, we propose the combination of stationary ferry access points (FAPs) with MF routing to increase contact opportunities between mobile hosts and the MF and consequently improve the performance of the DTN. We also propose several placement models for deploying FAPs on MF routes. We evaluate the performance of the FAP placement models through comprehensive simulation. Our findings show that FAPs do improve the performance of MF-assisted DTNs and symmetric placement of FAPs outperforms other placement strategies.

Keywords: Service infrastructure, delay-tolerant network, messageferry routing, placement models.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1973

Authors: Md. SajadulAlam, I. Ahmed, A. Naqib Jimmy, M. Haque Munna, N. Ahsan Khan

Abstract:

The construction of coastal polders to reduce salinity ingress at greater Khulna-Jashore region area was initiated in the 1960s by Bangladesh Water Development Board (BWDB). Although successful in a short run the, the Coastal Embankment Project (CEP) and its predecessors are often held accountable for the entire ecological disasters that affected many people. To overcome the water-logging crisis the first Tidal River Management (TRM) at Beel Bhaiana, Bhabodaho was implemented by the affected local people in an unplanned. TRM is an eco-engineering, low cost and participatory approach that utilizes the natural tidal characteristics and the local community’s indigenous knowledge for design and operation of watershed management. But although its outcomes were overwhelming in terms of reducing water-logging, increasing navigability etc. at Beel Bhaina the outcomes of its consequent schemes were debatable. So this study aims to examine the effectiveness and impact of the TRM schemes. Primary data were collected through questionnaire survey, Focus Group Discussion (FGD) and Key Informant Interview (KII) so as to collect mutually complementary quantitative and qualitative information along with extensive literature review. The key aspects that were examined include community participation, community perception on effectiveness and operational challenges.

Keywords: Sustainable, livelihood, salinity, water-logging, shrimp fry collectors, coastal region.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 537

Authors: Muhibul Haque Bhuyan

Abstract:

Inclusion of any design project in an undergraduate electrical and electronic engineering curriculum and producing creative ideas in the final year capstone design projects have received numerous comments at the Board of Accreditation for Engineering and Technical Education (BAETE) several times by the mentors and visiting program evaluator team members at different public and private universities in Bangladesh. To eradicate this deficiency which is needed for getting the program accreditation, a thorough change was required in the Department of Electrical and Electronic Engineering (EEE) for its BSc in EEE program at Southeast University, Dhaka, Bangladesh. We suggested making changes in the course curriculum titles and contents, emphasizing to include capstone design projects, question setting, examining students through other standard methods, selecting and retaining Outcome-Based Education (OBE)-oriented engineering faculty members, improving laboratories through purchasing new equipment and software as well as developing new experiments for each laboratory courses, and engaging the students to practical designs in various courses and final year projects. This paper reports on capstone design project course objectives, course outcomes, mapping with the program outcomes, cognitive domain of learning, assessment schemes, guidelines, suggestions and recommendations for supervision processes, assessment strategy, and rubric setting, etc. It is expected that this will substantially improve the capstone design projects offering, supervision, and assessment in the undergraduate EEE program to fulfill the arduous requirements of BAETE accreditation based on OBE.

Keywords: Course outcome, capstone design project, assessment and evaluation, electrical and electronic engineering.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 518

Authors: Mohammad Najmol Haque, Takeshi Maki, Jun Sasaki

Abstract:

Headed stud shear connections are widely used in the junction or embedded zone of hybrid girder to achieve whole composite action with continuity that can sustain steel-concrete interfacial tensile and shear forces. In Japan, Japan Road Association (JRA) specifications are used for hybrid girder design that utilizes very low level of stud capacity than those of American Institute of Steel Construction (AISC) specifications, Japan Society of Civil Engineers (JSCE) specifications and EURO code. As low design shear strength is considered in design of connections, the time dependent shear behavior due to sustained external loading is not considered, even not fully studied. In this study, a finite element approach was used to evaluate the time dependent shear behavior for headed studs used as connections at the junction. This study clarified, how the sustained loading distinctively impacted on changing the interfacial shear of connections with time which was sensitive to lodging history, positions of flanges, neighboring studs, position of prestress bar and reinforcing bar, concrete strength, etc. and also identified a shear influence area. Stud strength was also confirmed through pushout tests. The outcome obtained from the study may provide an important basis and reference data in designing connections of hybrid girders with enhanced stud capacity with due consideration of their long-term shear behavior.

Keywords: Finite element approach, hybrid girder, headed stud shear connections, sustained loading, time dependent shear behavior.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 621

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 738