Search results for: zener diode

Authors: Sobiya George, Anna Dora Gudmundsdottir

Abstract:

The 2-hydroxychalcones form an important group of organic compounds not only because of their pharmacological properties but also because they are intermediates in the biosynthesis of flavanones. We studied the photoreactivity of 2-hydroxychalcone derivatives in aprotic solvent acetonitrile and found that their photochemistry is concentration-dependent. Irradiation of 2-hydroxychalcone derivatives with 365 nm light emitting diode (LED) in dilute concentration selectively forms flavanones, whereas, at higher concentrations, an additional photoproduct is observed. However, the application of the continuous photo-flow method resulted in the selective formation of flavanones even at higher concentrations. To understand the reaction mechanism and explain the concentration-dependent photoreactivity of 2-hydroxychalcones, we preformed trapping studies with tris(trimethylsilyl)silane, nanosecond laser flash photolysis, and time dependent-density functional theory (TD-DFT) calculations.

Keywords: flavanones, hydroxychalcones, laser flash photolysis, TD-DFT calculations

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Authors: Ahmed Bakry, Moustafa Ahmed

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We model and simulate the combined effect of fiber dispersion and frequency chirp of a directly modulated high-speed laser diode on the figures of merit of a non-amplified 40-Gbps optical fiber link. We consider both the return to zero (RZ) and non-return to zero (NRZ) patterns of the pseudorandom modulation bits. The performance of the fiber communication system is assessed by the fiber-length limitation due to the fiber dispersion. We study the influence of replacing standard single-mode fibers by non-zero dispersion-shifted fibers on the maximum fiber length and evaluate the associated power penalty. We introduce new dispersion tolerances for 1-dB power penalty of the RZ and NRZ 40-Gbps optical fiber links.

Keywords: bit error rate, dispersion, frequency chirp, fiber communications, semiconductor laser

Procedia PDF Downloads 641

Authors: Antonina Semakova, Karim Mynbaev, Nikolai Bazhenov, Anton Chernyaev, Sergei Kizhaev, Nikolai Stoyanov

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At present, heterostructures are used for fabrication of almost all types of optoelectronic devices. Our research focuses on the optoelectronic properties of InAs(Sb) solid solutions that are widely used in fabrication of light emitting diodes (LEDs) operating in middle wavelength infrared range (MWIR). This spectral range (2-6 μm) is relevant for laser diode spectroscopy of gases and molecules, for systems for the detection of explosive substances, medical applications, and for environmental monitoring. The fabrication of MWIR LEDs that operate efficiently at room temperature is mainly hindered by the predominance of non-radiative Auger recombination of charge carriers over the process of radiative recombination, which makes practical application of LEDs difficult. However, non-radiative recombination can be partly suppressed in quantum-well structures. In this regard, studies of such structures are quite topical. In this work, electroluminescence (EL) of LED heterostructures based on InAs(Sb) epitaxial films with the molar fraction of InSb ranging from 0 to 0.09 and multi quantum-well (MQW) structures was studied in the temperature range 4.2-300 K. The growth of the heterostructures was performed by metal-organic chemical vapour deposition on InAs substrates. On top of the active layer, a wide-bandgap InAsSb(Ga,P) barrier was formed. At low temperatures (4.2-100 K) stimulated emission was observed. As the temperature increased, the emission became spontaneous. The transition from stimulated emission to spontaneous one occurred at different temperatures for structures with different InSb contents in the active region. The temperature-dependent carrier lifetime, limited by radiative recombination and the most probable Auger processes (for the materials under consideration, CHHS and CHCC), were calculated within the framework of the Kane model. The effect of various recombination processes on the carrier lifetime was studied, and the dominant role of Auger processes was established. For MQW structures quantization energies for electrons, light and heavy holes were calculated. A characteristic feature of the experimental EL spectra of these structures was the presence of peaks with energy different from that of calculated optical transitions between the first quantization levels for electrons and heavy holes. The obtained results showed strong effect of the specific electronic structure of InAsSb on the energy and intensity of optical transitions in nanostructures based on this material. For the structure with MQWs in the active layer, a very weak temperature dependence of EL peak was observed at high temperatures (>150 K), which makes it attractive for fabricating temperature-resistant gas sensors operating in the middle-infrared range.

Keywords: Electroluminescence, InAsSb, light emitting diode, quantum wells

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Authors: Edwina G. Rodrigues, S. J. Bindhu, A. V. Rajesh

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This paper proposes a switched capacitor based driver circuit for high power light emitting diodes with a front end rectifier. LEDs are low-voltage light sources, requiring a constant DC voltage or current to operate optimally. LEDs, therefore, require a device that can convert incoming AC power to the proper DC voltage, and regulate the current flowing through the LED during operation. Proposed topology has a front end converter. It is an AC-DC rectifier that works on bridgeless boost topology which shapes the input current waveform. The front end converter is followed by a DC-DC converter which provides a constant DC voltage across the LEDs. A 12V AC input is given to the input of frontend converter which rectifies and boost the voltage to 24v DC and gives it to the DC-DC converter. The DC-DC converter converts the 24V DC and regulates this constant DC voltage across the LEDs.

Keywords: bridgeless rectifier, power factor correction(PFC), SC converter, total harmonic distortion (THD)

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Authors: Patrik Scajev, Pavels Onufrijevs, Algirdas Mekys, Tadas Malinauskas, Dominykas Augulis, Liudvikas Subacius, Kuo-Chih Lee, Jevgenijs Kaupuzs, Arturs Medvids, Hung Hsiang Cheng

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In this study, we focused on the optoelectronic properties of the photodiodes prepared by using 200 nm thick Ge₀.₉₅Sn₀.₀₅ epitaxial layers on Ge/n-Si substrate with aluminum contacts. Photodiodes were formed on non-irradiated and Nd: YAG laser irradiated Ge₀.₉₅Sn₀.₀₅ layers. The samples were irradiated by pulsed Nd: YAG laser with 136.7-462.6 MW/cm² intensity. The photodiodes were characterized by using short laser pulses with the wavelength in the 2.0-2.6 μm range. The laser-irradiated diode was found more sensitive in the long-wavelength range due to laser-induced Sn atoms redistribution providing formation of graded bandgap structure. Sub-millisecond photocurrent relaxation in the diodes revealed their suitability for image sensors. Our findings open the perspective for improving the photo-sensitivity of GeSn alloys in the mid-infrared by pulsed laser processing.

Keywords: GeSn, laser processing, photodetector, infrared

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Authors: Nadia Chagtmi, Nejla Rejab, Noureddine Boulejfen

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This paper presents a calibration approach based on artificial neural networks (ANN) to determine the envelop signal (I+jQ) of a six-port based receiver (SPR). The memory effects called also dynamic behavior and the nonlinearity brought by diode based power detector have been taken into consideration by the ANN. Experimental set-up has been performed to validate the efficiency of this method. The efficiency of this approach has been confirmed by the obtained results in terms of waveforms. Moreover, the obtained error vector magnitude (EVM) and the mean absolute error (MAE) have been calculated in order to confirm and to test the ANN’s performance to achieve I/Q recovery using the output voltage detected by the power based detector. The baseband signal has been recovered using ANN with EVMs no higher than 1 % and an MAE no higher than 17, 26 for the SPR excited different type of signals such QAM (quadrature amplitude modulation) and LTE (Long Term Evolution).

Keywords: six-port based receiver; calibration, nonlinearity, memory effect, artificial neural network

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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A 1 kW power factor correction boost converter with an active snubber cell is presented in this paper. In the converter, the main switch turns on under zero voltage transition (ZVT) and turns off under zero current transition (ZCT) without any additional voltage or current stress. The auxiliary switch turns on and off under zero current switching (ZCS). Besides, the main diode turns on under ZVS and turns off under ZCS. The output current and voltage are controlled by the PFC converter in wide line and load range. The simulation results of converter are obtained for 1 kW and 100 kHz. One of the most important feature of the given converter is that it has direct power transfer as well as excellent soft switching techniques. Also, the converter has 0.99 power factor with the sinusoidal input current shape.

Keywords: power factor correction, direct power transfer, zero-voltage transition, zero-current transition, soft switching

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Authors: Zhipeng Dong, Jing Guo

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Graphene-semiconductor contacts have been extensively studied recently, both as a stand-alone diode device for potential applications in photodetectors and solar cells, and as a building block to vertical transistors. Graphene is a two-dimensional nanomaterial with vanishing density-of-states at the Dirac point, which differs from conventional metal. In this work, image-charge-induced barrier lowering (BL) in graphene-semiconductor contacts is studied and compared to that in metal Schottky contacts. The results show that despite of being a semimetal with vanishing density-of-states at the Dirac point, the image-charge-induced BL is significant. The BL value can be over 50% of that of metal contacts even in an intrinsic graphene contacted to an organic semiconductor, and it increases as the graphene doping increases. The dependences of the BL on the electric field and semiconductor dielectric constant are examined, and an empirical expression for estimating the image-charge-induced BL in graphene-semiconductor contacts is provided.

Keywords: graphene, semiconductor materials, schottky barrier, image charge, contacts

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Authors: Sewon Kim, Chang Yeop Lee, Minjun Kwon

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This study is aiming at establishing the relationship between the optical signal of flame and an equivalent ratio of flame. In this experiment, flame optical signal in a furnace is measured using photodiode. The combustion system which is composed of metal fiber burner and vertical furnace and flame chemiluminescence is measured at various experimental conditions. In this study, the flame chemiluminescence of laminar premixed flame is measured by using commercially available photodiode. It is experimentally investigated the relationship between equivalent ratio and photodiode signal. In addition, The strategy of combustion control method is proposed by using the optical signal and fuel pressure. The results showed that certain relationship between optical data of photodiode and equivalence ratio exists and this leads to the successful application of this system for instantaneous measurement of equivalence ration of the combustion system.

Keywords: flame chemiluminescence, photo diode, equivalence ratio, combustion control

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Authors: M. Kaviani Darani, S. Bastani, M. Ghahari, P. Kardar

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In this paper the NaYF4: Yb3+, Tm3+ nanocrystals were synthesized by hydrothermal method. Different chelating ligand type (citric acid, butanoic acid, and AOT) was selected to investigate the effect of their concentration on upconversion efficiency. Crystal structure and morphology have been well characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Photo luminescence were recorded on a spectrophotometer equipped with 980 nm laser diode az excitation source and an integerating sphere. The products with various morphologies range from sphere to cubic, hexagonal,prism and nanorods were prepared at different ratios. The particle size was found to be dependent on the nucleation rate, which, in turn, was affected by type and concentration of ligands. The optimum amount of chelate to RE ratio was obtained 0.75, 1.5, and 1 for Citric Acid, Butanoic Acid and AOT, respectively. Emissions in the UV (1D2-3H6), blue-violet(1D2-3F4), blue (1G4-3H6), red (1G4-3F4), and NIR (1G4-3H5) were observed and were the direct result of subsequent transfers of energy from the Yb3+ ion to the Tm3+ ion.

Keywords: upconversion nanoparticles, NaYF4, lanthanide, hydrothermal

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Authors: Yasunori Kobori, Murong Li, Feng Zhao, Shu Wu, Nobukazu Takai, Haruo Kobayashi

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This paper proposes an electrolytic capacitor-less transformer-less AC-DC LED driver with a current ripple canceller. The proposed LED driver includes a diode bridge, a buck-boost converter, a negative feedback controller and a current ripple cancellation circuit. The current ripple canceller works as a bi-directional current converter using a sub-inductor, a sub-capacitor and two switches for controlling current flow. LED voltage is controlled in order to regulate LED current by the negative feedback controller using a current sense resistor. There are two capacitors with capacitance of 5 uF. We describe circuit topologies, operation principles and simulation results for our proposed circuit. In addition, we show the line regulation for input voltage variation from 85V to 130V. The output voltage ripple is 2V and the LED current ripple is 65 mA which is less than 20% of the average of LED current of 350 mA.

Keywords: DC-DC buck converter, four-level output voltage, single inductor multi output (SIMO), switching converter

Procedia PDF Downloads 547

Authors: R. K. Vinnakota, D. A. Genov, Z. Dong, A. F. Briggs, L. Nordin, S. R. Bank, D. Wasserman

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We present a semiconductor-based plasmonic electro-optic modulator based on excitation and active control of surface plasmon polaritons (SPPs) at the interface of degenerately doped In₀.₅₃Ga₀.₄₇As pn++ junctions. Set of devices, which we refer to as a surface plasmon polariton diode (SPPD), are fabricated and characterized electrically and optically. Optical characterization predicts far-field voltage-aided reflectivity modulation for mid-IR wavelengths. Numerical device characterizations using a self-consistent electro-optic multiphysics model have been performed to confirm the experimental findings were predicting data rates up to 1Gbits/s and 3dB bandwidth as high as 2GHz. Our findings also show that decreasing the device dimensions can potentially lead to data rates of more than 50Gbits/s, thus potentially providing a pathway toward fast all-semiconductor-based plasmotronic devices.

Keywords: plasmonics, optoelectronics, PN junctions, surface plasmon polaritons

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.

Keywords: power factor correction, zero-voltage transition, zero-current transition, soft switching

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Authors: Anil P. Dewani, Alok S. Tripathi, Anil V. Chandewar

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Present manuscript reports the development and validation of a quantitative high performance liquid chromatography method for the pharmacokinetic evaluation of Glimepiride (GLM) and Ilaprazole (ILA) in rat plasma. The plasma samples were involved with Solid phase extraction process (SPE). The analytes were resolved on a Phenomenex C18 column (4.6 mm× 250 mm; 5 µm particle size) using a isocratic elution mode comprising methanol:water (80:20 % v/v) with pH of water modified to 3 using Formic acid, the total run time was 10 min at 225 nm as common wavelength, the flow rate throughout was 1ml/min. The method was validated over the concentration range from 10 to 600 ng/mL for GLM and ILA, in rat plasma. Metformin (MET) was used as Internal Standard. Validation data demonstrated the method to be selective, sensitive, accurate and precise. The limit of detection was 1.54 and 4.08 and limit of quantification was 5.15 and 13.62 for GLM and ILA respectively, the method demonstrated excellent linearity with correlation coefficients (r2) 0.999. The intra and inter-day precision (RSD%) values were < 2.0% for both ILA and GLM. The method was successfully applied in pharmacokinetic studies followed by oral administration in rats.

Keywords: pharmacokinetics, glimepiride, ilaprazole, HPLC, SPE

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Authors: Kyung Min Park, Cheol Hee Moon

Abstract:

In this study we are to develop a sealing process using a mixture of a LMPA and an epoxy for the atmospheric OLED sealing process as a substitute for the thin-film process. Electrode lines were formed on the substrates, which were covered with insulating layers and sacrificial layers. A mixture of a LMPA and an epoxy was screen printed between the two electrodes. In order to generate a heat for the melting of the mixture, Joule heating method was used. Were used instantaneous discharge process for generating Joule heating. Experimental conditions such as voltage, time and constituent of the electrode were varied to optimize the heating conditions. As a result, the mixture structure of this study showed a great potential for a low-cost, low-temperature, atmospheric OLED sealing process as a substitute for the thin-film process.

Keywords: organic light emitting diode, encapsulation, low melting point alloy, joule heat

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Authors: Juan F. Gutierrez, Jesus M. Quintero, Diego Sandoval

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An important feature of LED technology is the fast on-off commutation, which allows data transmission. Visible Light Communication (VLC) is a wireless method to transmit data with visible light. Modulation formats such as On-Off Keying (OOK) and Color Shift Keying (CSK) are used in VLC. Since CSK is based on three color bands uses red, green, and blue monochromatic LED (RGB-LED) to define a pattern of chromaticities. This type of CSK provides poor color quality in the illuminated area. This work presents the design and implementation of a VLC system using RGB-based CSK with 16, 8, and 4 color points, mixing with a steady baseline of a phosphor white-LED, to improve the color quality of the LED-Fixture. The experimental system was assessed in terms of the Color Rendering Index (CRI) and the Symbol Error Rate (SER). Good color quality performance of the LED-Fixture was obtained with an acceptable SER. The laboratory setup used to characterize and calibrate an LED-Fixture is described.

Keywords: VLC, indoor lighting, color quality, symbol error rate, color shift keying

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Authors: G. Vinitha, A. Ramalingam

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In view of a possible application in optical data storage devices, diffraction grating efficiency of an organic dye, Acid Fuchsin doped in PMMA matrix was studied under excitation with CW diode pumped Nd: YAG laser at 532 nm. The open aperture Z-scan of dye doped polymer displayed saturable absorption and the closed aperture Z-scan of the samples exhibited negative nonlinearity. The diffraction efficiency of the grating is the ratio of the intensity of the first order diffracted power to the incident read beam power. The dye doped polymer films were found to be good media for recording. It is observed that the formation of gratings strongly depend on the concentration of dye in the polymer film, the intensity ratios of the writing beams and the angle between the writing beams. It has been found that efficient writing can be made at an angle of 20° and when the intensity ratio of the writing beams is unity.

Keywords: diffraction efficiency, nonlinear optical material, saturable absorption, surface-relief-gratings

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Authors: Mohamed Achehboune, Mohammed Khenfouch, Issam Boukhoubza, Bakang Mothudi, Izeddine Zorkani, Anouar Jorio

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Zinc Oxide (ZnO) nanostructures have been attracting growing interest in recent years; their optical and electrical properties make them useful as attractive and promising materials for optoelectronic applications. In this study, pure and Hafnium doped ZnO nanostructures were synthesized using a green processing method. The structural, optical and electrical properties of samples were investigated structural and optical spectroscopies and electrical measurements. The synthesis and chemical composition of pure and Hafnium doped ZnO were confirmed by SEM observation. The XRD studies of Hafnium doped ZnO demonstrate the formation of wurtzite structure with preferred c-axis orientation. Moreover, the optical and electrical properties of doped material have improved after the doping process. The experimental results obtained for our material show that Hf doped ZnO nanostructures could be a promising material in optoelectronic applications such as photovoltaic cell and light emitting diode devices.

Keywords: green synthesis, hafnium-doped-zinc oxide, nanostructures, optoelectronic

Procedia PDF Downloads 268

Authors: Olawale J. Olaluyi, Ayodele S. Oluwole, O. Akinsanmi, Johnson O. Adeogo

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Communication using visible light VLC is considered a cutting-edge technology used for data transmission and illumination since it uses less energy than radio frequency (RF) technology and has a large bandwidth, extended lifespan, and high security. The room's irregular distribution of small base stations, or LED array distribution, is the cause of the obscured area, minimum signal-to-noise ratio (SNR), and received power. In order to maximize the received power distribution and SNR at the center of the room for an indoor VLC system, the researchers offer an innovative model for the placement of eight LED array distributions in this work. We have investigated the arrangement of the LED array distribution with regard to receiving power to fill the open space in the center of the room. The suggested LED array distribution saved 36.2% of the transmitted power, according to the simulation findings. Aside from that, the entire room was equally covered. This leads to an increase in both received power and SNR.

Keywords: visible light communication (VLC), light emitted diodes (LED), optical power distribution, signal-to-noise ratio (SNR).

Procedia PDF Downloads 88

Authors: Sanguk Nam, Van Ha Nguyen, Hanjung Song

Abstract:

For low-power applications such as adapters for portable devices and USB chargers, the primary side regulation (PSR) fly-back converter is widely used in lieu of the conventional fly-back converter using opto-coupler because of its simpler structure and lower cost. In the literature, there has been studies focusing on the design of PSR circuit; however, the conventional sensing method in PSR circuit using RC delay has a lower accuracy as compared to the conventional fly-back converter using opto-coupler. In this paper, we propose a novel PWM/PFM controller using new sensing technique for the PSR fly-back converter which can control an accurate output voltage. The conventional PSR circuit can sense the output voltage information from the auxiliary winding to regulate the duty cycle of the clock that control the output voltage. In the sensing signal waveform, there has two transient points at time the voltage equals to Vout+VD and Vout, respectively. In other to sense the output voltage, the PSR circuit must detect the time at which the current of the diode at the output equals to zero. In the conventional PSR flyback-converter, the sensing signal at this time has a non-sharp-negative slope that might cause a difficulty in detecting the output voltage information since a delay of sensing signal or switching clock may exist which brings out an unstable operation of PSR fly-back converter. In this paper instead of detecting output voltage at a non-sharp-negative slope, a sharp-positive slope is used to sense the proper information of the output voltage. The proposed PRS circuit consists of a saw-tooth generator, a summing circuit, a sample and hold circuit and a peak detector. Besides, there is also the start-up circuit which protects the chip from high surge current when the converter is turned on. Additionally, to reduce the standby power loss, a second mode which operates in a low frequency is designed beside the main mode at high frequency. In general, the operation of the proposed PSR circuit can be summarized as following: At the time the output information is sensed from the auxiliary winding, a saw-tooth signal from the saw-tooth generator is generated. Then, both of these signals are summed using a summing circuit. After this process, the slope of the peak of the sensing signal at the time diode current is zero becomes positive and sharp that make the peak easy to detect. The output of the summing circuit then is fed into a peak detector and the sample and hold circuit; hence, the output voltage can be properly sensed. By this way, we can sense more accurate output voltage information and extend margin even circuit is delayed or even there is the existence of noise by using only a simple circuit structure as compared with conventional circuits while the performance can be sufficiently enhanced. Circuit verification was carried out using 0.35μm 700V Magnachip process. The simulation result of sensing signal shows a maximum error of 5mV under various load and line conditions which means the operation of the converter is stable. As compared to the conventional circuit, we achieved very small error only used analog circuits compare with conventional circuits. In this paper, a PWM/PFM controller using a simple and effective sensing method for PSR fly-back converter has been presented in this paper. The circuit structure is simple as compared with the conventional designs. The gained results from simulation confirmed the idea of the design

Keywords: primary side regulation, PSR, sensing technique, peak detector, PWM/PFM control, fly-back converter

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Authors: Taegyoo Woo, Jong Kang Park, Jong Tae Kim

Abstract:

Visible Light Communication (VLC) provides wireless communication features in illumination systems. One of the key applications is to recognize the user location by indoor illuminators such as light emitting diodes. For localization of individual receivers in these systems, we usually assume that receivers and transmitters are placed in parallel. However, it is difficult to satisfy this assumption because the receivers move randomly in real case. It is necessary to analyze the case when transmitter is not placed perfectly parallel to receiver. It is also important to identify changes on optical gain by the tilted angles and distances of them against the illuminators. In this paper, we simulate optical gain for various cases where the tilt of the receiver and the distance change. Then, we identified changing patterns of optical gains according to tilted angles of a receiver and distance. These results can help many VLC applications understand the extent of the location errors with regard to optical gains of the receivers and identify the root cause.

Keywords: visible light communication, incident angle, optical gain, light emitting diode

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Authors: Laboratory of Semiconducting, Metallic Materials (LMSM) Biskra Algeria

Abstract:

InZnSnO2 (IZTO)/β-Ga2O3 Schottky solar barrier photodetector (PhD) exposed to 255 nm was simulated and compared to the measurement. Numerical simulations successfully reproduced the photocurrent at reverse bias and response by taking into account several factors, such as conduction mechanisms and material parameters. By adopting reducing the density of the trap as an improvement. The effect of reducing the bulk trap densities on the photocurrent, response, and time-dependent (continuous conductivity) was studied. As the trap density decreased, the photocurrent increased. The response was 0.04 A/W for the low Ga2O3 trap density. The estimated decay time for the lowest intensity ET (0.74, 1.04 eV) is 0.05 s and is shorter at ∼0.015 s for ET (0.55 eV). This indicates that the shallow traps had the dominant effect (ET = 0.55 eV) on the continuous photoconductivity phenomenon. Furthermore, with decreasing trap densities, this PhD can be considered as a self-powered solar-blind photodiode (SBPhD).

Keywords: IZTO/β-Ga2O3, self-powered solar-blind photodetector, numerical simulation, bulk traps

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Authors: Samrat Vikramaditya Tiwari, Atul Sewaiwar, Yeon-Ho Chung

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Device-to-device (D2D) communication is considered a promising technique to provide wireless peer-to-peer communication services. Due to increasing demand on mobile services, available spectrum for radio frequency (RF) based communications becomes scarce. Recently, visible light communications (VLC) has evolved as a high speed wireless data transmission technology for indoor environments with abundant available bandwidth. In this paper, a novel VLC based D2D communication that provides wireless peer-to-peer communication is proposed. Potential low operating power devices for an efficient D2D communication over increasing distance of separation between devices is analyzed. Optical repeaters (OR) are also proposed to enhance the performance in an environment where direct D2D communications yield degraded performance. Simulation results show that VLC plays an important role in providing efficient D2D communication up to a distance of 1 m between devices. It is also found that the OR significantly improves the coverage distance up to 3.5 m.

Keywords: visible light communication, light emitting diode, device-to-device, optical repeater

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Authors: Josue Javier Martinez Flores, Jaime Alvarez Quintana

Abstract:

A thermal rectifier consists of a device which can load a different heat flow which depends on the direction of that flow. That device is a thermal diode. It is well known that heat transfer in solids basically depends on the electrical, magnetic and crystalline nature of materials via electrons, magnons and phonons as thermal energy carriers respectively. In the present research, we have synthesized polycrystalline Ni-Cu alloys and identified the Curie temperatures; and we have observed that by way of secondary phase transitions, it is possible manipulate the heat conduction in solid state thermal diodes via transition temperature. In this sense, we have succeeded in developing solid state thermal diodes with a control gate through the Curie temperature via the activation and deactivation of magnons in Ni-Cu ferromagnetic alloys at room temperature. Results show thermal diodes with thermal rectification factors up to 1.5. Besides, the performance of the electrical rectifiers can be controlled by way of alloy Cu content; hence, lower Cu content alloys present enhanced thermal rectifications factors than higher ones.

Keywords: thermal rectification, Curie temperature, ferromagnetic alloys, magnons

Procedia PDF Downloads 246

Authors: Yasunori Kobori, Li Quan, Shu Wu, Nizam Mohyar, Zachary Nosker, Nobukazu Tsukiji, Nobukazu Takai, Haruo Kobayashi

Abstract:

This paper proposes an electrolytic capacitor-less transformer-less AC-DC LED driver with a current ripple canceller. The proposed LED driver includes a diode bridge, a buck-boost converter, a negative feedback controller and a current ripple cancellation circuit. The current ripple canceller works as a bi-directional current converter using a sub-inductor, a sub-capacitor and two switches for controlling current flow. LED voltage is controlled in order to regulate LED current by the negative feedback controller using a current sense resistor. There are two capacitors which capacitance of 5 uF. We describe circuit topologies, operation principles and simulation results for our proposed circuit. In addition, we show the line regulation for input voltage variation from 85V to 130V. The output voltage ripple is 2V and the LED current ripple is 65 mA which is less than 20% of the typical current of 350 mA. We are now making the proposed circuit on a universal board in order to measure the experimental characteristics.

Keywords: LED driver, electrolytic, capacitor-less, AC-DC converter, buck-boost converter, current ripple canceller

Procedia PDF Downloads 473

Authors: Geon Bae, Cheol Hee Moon

Abstract:

Organic Light Emitting Diodes (OLEDs) are being developed rapidly as next-generation displays due to their self-luminous and flexible characteristics. OLEDs are highly susceptible to moisture and oxygen due to their structural properties. Thus, requiring a high level of encapsulation technology. Recently, encapsulation technology such as Thin Film Encapsulation (TFE) has been developed for OLED, but it is not perfect to prevent moisture permeation on the side. In this study, we propose OLED encapsulation method using Low melting Point Alloy (LMPA). The LMPA line was designed in square box shape on the outer edge of the device and was formed by screen printing method. To determine if LMPA has an effect on OLED, we fabricated solution processed OLEDs with a square-shaped LMPA line and evaluate the I-V-L characteristics of the OLEDs. Also, the resistance characteristic of the LMPA line was observed by repeatedly bending the LMPA line. It is expected that LMPA encapsulation will have a great advantage in shortening the process time and cost reduction.

Keywords: OLED, encapsulation, LMPA, solution process

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Authors: Arnab Majumdar, Srimani Sen

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In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p⁺pnn⁺ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×10⁸ A/m². The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×10⁸ A/m².

Keywords: cubic ZnB-GaN, hexagonal 4H-SiC, double drift impatt diode, millimetre wave, optimised bias current density, wide band gap semiconductor

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Authors: A.G. S. Aldajani, N. Smida, M. G. Althobaiti, B. Zaidi

Abstract:

In order to exploit the good electrical properties of anthracene and the excellent properties of fluorescein, new hybrid material has been synthesized (An-Fl). Current-voltage measurements were done on a new single-layer ITO/An-FL/Al device of typically 100 nm thickness. Atypical diode behavior is observed with a turn-on voltage of 4.4 V, a dynamic resistance of 74.07 KΩ and a rectification ratio of 2.02 due to unbalanced transport. Results show also that the current-voltage characteristics present three different regimes of the power-law (J~Vᵐ) for which the conduction mechanism is well described with space-charge-limited current conduction mechanism (SCLC) with a charge carrier mobility of 2.38.10⁻⁵cm2V⁻¹S⁻¹. Moreover, the electrical transport properties of this device have been carried out using a dependent frequency study in the range (50 Hz–1.4 MHz) for different applied biases (from 0 to 6 V). At lower frequency, the σdc values increase with bias voltage rising, supporting that the mobile ion can hop successfully to its nearest vacant site. From σac and impedance measurements, the equivalent electrical circuit is evidenced, where the conductivity process is coherent with an exponential trap distribution caused by structural defects and/or chemical impurities.

Keywords: semiconducting polymer, conductivity, SCLC, impedance spectroscopy

Procedia PDF Downloads 178

Authors: Hyeon Mi Noh, Ju Hyun Oh, Jung Hyun Jeong, Haeyoung Choi, Jung Hwan Kim

Abstract:

The Er³⁺/Yb³⁺/Tm³⁺ tri-doped Y₂O₃ nanophosphors were synthesized by solvothermal method and its temperature dependence of the white upconversion emission has been studied by using 975 nm laser diode. The upconversion emission spectra in 1 mol% Er³⁺/5 mol% Yb³⁺/xTm³ tri-doped Y₂O₃ nanophosphors sintered at 1000 °C with x from 0 to 0.5 mol%. The blue emission intensity increase with Tm³⁺ concentration from 0 to 0.5 mol%, it is due to the 2F7/2→2F5/2 transition of Yb³⁺ around 10,000 cm-1 could easily reach the Tm³⁺ sates. The white light is composed with the blue (1G4→3H6 of Tm³⁺), green (2H11/2, 4S3/2→4I15/2 of Er³⁺), and red (4F9/2→4I15/2 of Er³⁺) upconversion radiations. The Y₂O₃: Er³⁺/Yb³⁺/Tm³⁺ nanophosphors show from white to green upconversion emission at power of 600 mW/cm² as sintering temperature increased. The calculated Commission Internationale de l’Eclairage (CIE) coordinates can be located in the white area with various sintering temperatures, in sintered at 1000 °C, and their color coordinates are very close to the standard white-light emission (0.33, 0.33). Their upconversion processes were explained by measuring the upconversion luminescence spectra and pump power dependence and energy level diagram.

Keywords: white upconversion emission, nanophosphors, energy transfer, solvothermal method

Procedia PDF Downloads 337

Authors: Courret Gilles, Pidoux Damien

Abstract:

Considering that sunshine is the ultimate reference in lighting, we have examined the spectral correlation between a series of electric light sources and sunlight. As the latter is marked by fluctuations, we have taken two spectra of reference: on the one hand, the CIE daylight standard illuminant, and on the other hand, the global illumination by the clear sky with the sun at 30° above the horizon. We determined the coefficients of correlation between the spectra filtered by the sensitivity of the CIE standard observer for photopic vision. We also calculated the luminous efficiency of the radiation in order to compare the ideal energy performances as well as the CIE color indexes Ra, Ra14, and Rf, since the choice of a light source requires a trade-off between color rendering and luminous efficiency. The benchmarking includes the most commonly used bulbs, various white LED (Lighting Emitting Diode) of warm white or cold white types, incandescent halogen as well as two HID lamps (High-Intensity Discharge) and two plasma lamps of different types, a solar simulator and a new version of the sulfur lamp. The latter obtains the best correlation, whether in comparison with the solar spectrum or that of the standard illuminant.

Keywords: electric light sources, plasma lamp, daylighting, sunlight, spectral correlation

Procedia PDF Downloads 185