Search results for: Thin-film transistor (TFT).
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 101

Search results for: Thin-film transistor (TFT).

11 Comparative Study of Evolutionary Model and Clustering Methods in Circuit Partitioning Pertaining to VLSI Design

Authors: K. A. Sumitra Devi, N. P. Banashree, Annamma Abraham

Abstract:

Partitioning is a critical area of VLSI CAD. In order to build complex digital logic circuits its often essential to sub-divide multi -million transistor design into manageable Pieces. This paper looks at the various partitioning techniques aspects of VLSI CAD, targeted at various applications. We proposed an evolutionary time-series model and a statistical glitch prediction system using a neural network with selection of global feature by making use of clustering method model, for partitioning a circuit. For evolutionary time-series model, we made use of genetic, memetic & neuro-memetic techniques. Our work focused in use of clustering methods - K-means & EM methodology. A comparative study is provided for all techniques to solve the problem of circuit partitioning pertaining to VLSI design. The performance of all approaches is compared using benchmark data provided by MCNC standard cell placement benchmark net lists. Analysis of the investigational results proved that the Neuro-memetic model achieves greater performance then other model in recognizing sub-circuits with minimum amount of interconnections between them.

Keywords: VLSI, circuit partitioning, memetic algorithm, genetic algorithm.

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10 A High-Speed and Low-Energy Ternary Content Addressable Memory Design Using Feedback in Match-Line Sense Amplifier

Authors: Syed Iftekhar Ali, M. S. Islam

Abstract:

In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.

Keywords: content-addressable memory, energy consumption, feedback, peak power, sensing scheme, sense amplifier, ternary.

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9 A High-Frequency Low-Power Low-Pass-Filter-Based All-Current-Mirror Sinusoidal Quadrature Oscillator

Authors: A. Leelasantitham, B. Srisuchinwong

Abstract:

A high-frequency low-power sinusoidal quadrature oscillator is presented through the use of two 2nd-order low-pass current-mirror (CM)-based filters, a 1st-order CM low-pass filter and a CM bilinear transfer function. The technique is relatively simple based on (i) inherent time constants of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a simple negative resistance RN formed by a resistor load RL of a current mirror. Neither external capacitances nor inductances are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz and is current-tunable over a range of 370 MHz or 21.6 %. The power consumption is at approximately 0.45 mW. The amplitude matching and the quadrature phase matching are better than 0.05 dB and 0.15°, respectively. Total harmonic distortions (THD) are less than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The ratio of the oscillation frequency (f0) to the unity-gain frequency (fT) of a transistor is 0.25. Comparisons to other approaches are also included.

Keywords: Sinusoidal quadrature oscillator, low-pass-filterbased, current-mirror bilinear transfer function, all-current-mirror, negative resistance, low power, high frequency, low distortion.

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8 Design and Simulation of Heartbeat Measurement System Using Arduino Microcontroller in Proteus

Authors: Muhibul H. Bhuyan, Mafujul Hasan

Abstract:

If a person can monitor his/her heart rate regularly then he/she can detect heart disease early and thus he/she can enjoy longer life span. Therefore, this disease should be taken seriously. Hence, many health care devices and monitoring systems are being designed to keep track of the heart disease. This work reports a design and simulation processes of an Arduino microcontroller based heart rate measurement and monitoring system in Proteus environment. Clipping sensors were utilized to sense the heart rate of an individual from the finger tips. It is a digital device and uses mainly infrared (IR) transmitter (mainly IR LED) and receiver (mainly IR photo-transistor or IR photo-detector). When the heart pumps the blood and circulates it among the blood vessels of the body, the changed blood pressure is detected by the transmitter and then reflected back to the receiver accordingly. The reflected signals are then processed inside the microcontroller through a software written assembly language and appropriate heart rate (HR) is determined by it in beats per minute (bpm) from the detected signal for a duration of 10 seconds and display the same in bpm on the LCD screen in digital format. The designed system was simulated on several persons with varying ages, for example, infants, adult persons and active athletes. Simulation results were found very satisfactory.

Keywords: Heart rate measurement, design, simulation, Proteus, Arduino Uno microcontroller.

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7 Hand Gesture Interpretation Using Sensing Glove Integrated with Machine Learning Algorithms

Authors: Aqsa Ali, Aleem Mushtaq, Attaullah Memon, Monna

Abstract:

In this paper, we present a low cost design for a smart glove that can perform sign language recognition to assist the speech impaired people. Specifically, we have designed and developed an Assistive Hand Gesture Interpreter that recognizes hand movements relevant to the American Sign Language (ASL) and translates them into text for display on a Thin-Film-Transistor Liquid Crystal Display (TFT LCD) screen as well as synthetic speech. Linear Bayes Classifiers and Multilayer Neural Networks have been used to classify 11 feature vectors obtained from the sensors on the glove into one of the 27 ASL alphabets and a predefined gesture for space. Three types of features are used; bending using six bend sensors, orientation in three dimensions using accelerometers and contacts at vital points using contact sensors. To gauge the performance of the presented design, the training database was prepared using five volunteers. The accuracy of the current version on the prepared dataset was found to be up to 99.3% for target user. The solution combines electronics, e-textile technology, sensor technology, embedded system and machine learning techniques to build a low cost wearable glove that is scrupulous, elegant and portable.

Keywords: American sign language, assistive hand gesture interpreter, human-machine interface, machine learning, sensing glove.

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6 Precision Control of Single-Phase PWM Inverter Using M68HC11E Microcontroller

Authors: Khaled A. Madi

Abstract:

Induction motors are being used in greater numbers throughout a wide variety of industrial and commercial applications because it provides many benefits and reliable device to convert the electrical energy into mechanical motion. In some application it-s desired to control the speed of the induction motor. Because of the physics of the induction motor the preferred method of controlling its speed is to vary the frequency of the AC voltage driving the motor. In recent years, with the microcontroller incorporated into an appliance it becomes possible to use it to generate the variable frequency AC voltage to control the speed of the induction motor. This study investigates the microcontroller based variable frequency power inverter. the microcontroller is provide the variable frequency pulse width modulation (PWM) signal that control the applied voltage on the gate drive, which is provides the required PWM frequency with less harmonics at the output of the power inverter. The fully controlled bridge voltage source inverter has been implemented with semiconductors power devices isolated gate bipolar transistor (IGBT), and the PWM technique has been employed in this inverter to supply the motor with AC voltage. The proposed drive system for three & single phase power inverter is simulated using Matlab/Simulink. The Matlab Simulation Results for the proposed system were achieved with different SPWM. From the result a stable variable frequency inverter over wide range has been obtained and a good agreement has been found between the simulation and hardware of a microcontroller based single phase inverter.

Keywords: Power, inverter, PWM, microcontroller.

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5 Single Phase 13-Level D-STATCOM Inverter with Distributed System

Authors: R. Kamalakannan, N. Ravi Kumar

Abstract:

The global energy consumption is increasing persistently and need for distributed power generation through renewable energy is essential. To meet the power requirements for consumers without any voltage fluctuations and losses, modeling and design of multilevel inverter with Flexible AC Transmission System (FACTS) capability is presented. The presented inverter is provided with 13-level cascaded H-bridge topology of Insulated Gate Bipolar Transistor (IGBTs) connected along with inbuilt Distributed Static Synchronous Compensators (DSTATCOM). The DSTATCOM device provides control of power factor stability at local feeder lines and the inverter eliminates Total Harmonic Distortion (THD). The 13-level inverter utilizes 52 switches of each H-bridge is fed with single DC sources separately and the Pulse Width Modulation (PWM) technique is used for switching IGBTs. The control strategy implemented for inverter transmits active power to grid as well as it maintains power factor to be stable with achievement of steady state power transmission. Significant outcome of this project is improvement of output voltage quality with steady state power transmission with low THD. Simulation of inverter with DSTATCOM is performed using MATLAB/Simulink environment. The scaled prototype model of proposed inverter is built and its results were validated with simulated results.

Keywords: FACTS devices, distributed-Static synchronous compensators, DSTATCOM, total harmonics elimination, modular multilevel converter.

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4 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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3 A Novel Multiple Valued Logic OHRNS Modulo rn Adder Circuit

Authors: Mehdi Hosseinzadeh, Somayyeh Jafarali Jassbi, Keivan Navi

Abstract:

Residue Number System (RNS) is a modular representation and is proved to be an instrumental tool in many digital signal processing (DSP) applications which require high-speed computations. RNS is an integer and non weighted number system; it can support parallel, carry-free, high-speed and low power arithmetic. A very interesting correspondence exists between the concepts of Multiple Valued Logic (MVL) and Residue Number Arithmetic. If the number of levels used to represent MVL signals is chosen to be consistent with the moduli which create the finite rings in the RNS, MVL becomes a very natural representation for the RNS. There are two concerns related to the application of this Number System: reaching the most possible speed and the largest dynamic range. There is a conflict when one wants to resolve both these problem. That is augmenting the dynamic range results in reducing the speed in the same time. For achieving the most performance a method is considere named “One-Hot Residue Number System" in this implementation the propagation is only equal to one transistor delay. The problem with this method is the huge increase in the number of transistors they are increased in order m2 . In real application this is practically impossible. In this paper combining the Multiple Valued Logic and One-Hot Residue Number System we represent a new method to resolve both of these two problems. In this paper we represent a novel design of an OHRNS-based adder circuit. This circuit is useable for Multiple Valued Logic moduli, in comparison to other RNS design; this circuit has considerably improved the number of transistors and power consumption.

Keywords: Computer Arithmetic, Residue Number System, Multiple Valued Logic, One-Hot, VLSI.

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2 A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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1 Coils and Antennas Fabricated with Sewing Litz Wire for Wireless Power Transfer

Authors: Hikari Ryu, Yuki Fukuda, Kento Oishi, Chiharu Igarashi, Shogo Kiryu

Abstract:

Recently, wireless power transfer has been developed in various fields. Magnetic coupling is popular for feeding power at a relatively short distance and at a lower frequency. Electro-magnetic wave coupling at a high frequency is used for long-distance power transfer. The wireless power transfer has attracted attention in e-textile fields. Rigid batteries are required for many body-worn electric systems at the present time. The technology enables such batteries to be removed from the systems. Coils with a high Q factor are required in the magnetic-coupling power transfer. Antennas with low return loss are needed for the electro-magnetic coupling. Litz wire is so flexible to fabricate coils and antennas sewn on fabric and has low resistivity. In this study, the electric characteristics of some coils and antennas fabricated with the Litz wire by using two sewing techniques are investigated. As examples, a coil and an antenna are described. Both were fabricated with 330/0.04 mm Litz wire. The coil was a planar coil with a square shape. The outer side was 150 mm, the number of turns was 15, and the pitch interval between each turn was 5 mm. The Litz wire of the coil was overstitched with a sewing machine. The coil was fabricated as a receiver coil for a magnetic coupled wireless power transfer. The Q factor was 200 at a frequency of 800 kHz. A wireless power system was constructed by using the coil. A power oscillator was used in the system. The resonant frequency of the circuit was set to 123 kHz, where the switching loss of power Field Effect Transistor (FET) was was small. The power efficiencies were 0.44-0.99, depending on the distance between the transmitter and receiver coils. As an example of an antenna with a sewing technique, a fractal pattern antenna was stitched on a 500 mm x 500 mm fabric by using a needle punch method. The pattern was the 2nd-oder Vicsec fractal. The return loss of the antenna was -28 dB at a frequency of 144 MHz.

Keywords: E-textile, flexible coils, flexible antennas, Litz wire, wireless power transfer.

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