Search results for: 90%20nm

Authors: Farshid Fathinia, Mohammad Parsazadeh, Amirhossein Heshmati

Abstract:

Turbulent forced convection flow in a 2-dimensional channel over periodic grooves is numerically investigated. Finite volume method is used to study the effect of turbulence model. The range of Reynolds number varied from 10000 to 30000 for the ribheight to channel-height ratio (B/H) of 2. The downstream wall is heated by a uniform heat flux while the upstream wall is insulated. The investigation is analyzed with different types of nanoparticles such as SiO2, Al2O3, and ZnO, with water as a base fluid are used. The volume fraction is varied from 1% to 4% and the nanoparticle diameter is utilized between 20nm to 50nm. The results revealed 114% heat transfer enhancement compared to the water in a grooved channel by using SiO2 nanoparticle with volume fraction and nanoparticle diameter of 4% and 20nm respectively.

Keywords: Forced convection, Periodic grooves, Nanofluids, Turbulent model, Heat transfer.

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Authors: Sorcha Bennett, Joe Sullivan

Abstract:

Triple-Level Cell (TLC) NAND Flash memory at, and below, 20nm (nanometer) is still largely unexplored by researchers, and with the ever more commonplace existence of Flash in consumer and enterprise applications there is a need for such gaps in knowledge to be filled. At the time of writing, there was little published data or literature on TLC, and more specifically reliability testing, with a further emphasis on both endurance and retention. This paper will give an introduction to NAND Flash memory, followed by an overview of the relevant current research on the reliability of Flash memory, along with the planned future work which will provide results to help characterise the reliability of TLC memory.

Keywords: TLC NAND flash memory, reliability, endurance, retention, trade-off, raw flash, patterns.

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Authors: Victor E. Gromov, Evgenii A. Budovskikh, Ludmila P. Bashchenko, Yurii F. Ivanov, Anna V. Ionina, Nina A. Soskova, Guoyi Tang

Abstract:

The peculiarities of the nanoscale structure-phase states formed after electroexplosive carburizing and subsequent electron-beam treatment of technically pure titanium surface in different regimes are established by methods of transmission electron diffraction microscopy and physical mechanisms are discussed. Electroexplosive carburizing leads to surface layer formation (40 m thickness) with increased (in 3.5 times) microhardness. It consists of β-titanium, graphite (monocrystals 100-150 nm, polycrystals 5-10 nm, amorphous particles 3-5nm), TiC (5-10 nm), β-Ti02 (2-20nm). After electron-beam treatment additionally increasing the microhardness the surface layer consists of TiC.

Keywords: nanoscale, phase, structure, titanium

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Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (I_ON / I_OFF) of 2.66 × 10¹⁴ (I_ON at V_GS=1.5V, V_DS=1V and I_OFF at V_GS=0V, V_DS=1V) for gate length of 20nm and HfO₂ as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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