Search results for: antireflection

Authors: Samira Naghdi, Kyong Yop Rhee

Abstract:

Transfer-free synthesis of graphene on dielectric substrates is highly desirable but remains challenging. Here, by using a thin sacrificial platinum layer as a catalyst, graphene was deposited on a silicon substrate through a simple and transfer-free synthesis method. During graphene growth, the platinum layer evaporated, resulting in direct deposition of graphene on the silicon substrate. In this work, different growth conditions of graphene were optimized. Raman spectra of the produced graphene indicated that the obtained graphene was bilayer. The sheet resistance obtained from four-point probe measurements demonstrated that the deposited graphene had high conductivity. Reflectance spectroscopy of graphene-coated silicon showed a decrease in reflectance across the wavelength range of 200-800 nm, indicating that the graphene coating on the silicon surface had antireflection capabilities.

Keywords: antireflection coating, chemical vapor deposition, graphene, the sheet resistance

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Authors: Najme lari, Shahrokh Ahangarani, Ali Shanaghi

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Multilayer structure of thin films by the sol–gel process attracts great attention for antireflection applications. In this paper, antireflective nanometric multilayer SiO2-TiO2 films are formed on both sides of the glass substrates by combining the sol–gel method and the dip-coating technique. SiO2 and TiO2 sols were prepared using tetraethylorthosilicate (TEOS) and tetrabutylorthotitanate (TBOT) as precursors and also nitric acid as catalyst. Prepared coatings were investigated by Field-emission scanning electron microscope (FE-SEM), Fourier-transformed infrared spectrophotometer (FT-IR) and UV–visible spectrophotometer. After evaluation, all of SiO2 top layer coatings showed excellent antireflection in the wavelength range of 400-800 nm where the transmittance of glass substrate is significantly lower. By increasing the number of double TiO2-SiO2 layers, the transmission of the coated glass increases due to applied multilayer coating properties. 6-layer sol–gel TiO2-SiO2 shows the highest visible transmittance about 99.25% at the band of 550-650 nm.

Keywords: thin films, optical properties, sol-gel, multilayer

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Authors: Najme Lari, Shahrokh Ahangarani, Ali Shanaghi

Abstract:

Multilayer structure of thin films by the sol–gel process attracts great attention for antireflection applications. In this paper, antireflective nanometric multilayer SiO2-TiO2 films are formed on both sides of the glass substrates by combining the sol–gel method and the dip-coating technique. SiO2 and TiO2 sols were prepared using tetraethylorthosilicate (TEOS) and tetrabutylorthotitanate (TBOT) as precursors and nitric acid as catalyst. Prepared coatings were investigated by Field-emission scanning electron microscope (FE-SEM), Fourier-transformed infrared spectrophotometer (FT-IR) and UV–visible spectrophotometer. After evaluation, all of SiO2 top layer coatings showed excellent antireflection in the wavelength range of 400-800 nm where the transmittance of glass substrate is significantly lower. By increasing the number of double TiO2-SiO2 layers, the transmission of the coated glass increases due to applied multilayer coating properties. 6-layer sol–gel TiO2-SiO2 shows the highest visible transmittance about 99.25% at the band of 550-650 nm.

Keywords: thin films, optical properties, sol-gel, multilayer

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Authors: Gagik Ayvazyan, Levon Hakhoyan, Surik Khudaverdyan, Laura Lakhoyan

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Black Si (b-Si) is a nano-structured Si surface formed by a self-organized, maskless process with needle-like surfaces discernible by their black color. The combination of low reflectivity and the semi-conductive properties of Si found in b-Si make it a prime candidate for application in solar cells as an antireflection surface. However, surface recombination losses significantly reduce the efficiency of b-Si solar cells. Surface passivation using suitable dielectric films can minimize these losses. Nowadays some works have demonstrated that excellent passivation of b-Si nanostructures can be reached using Al₂O₃ films. However, the negative fixed charge present in Al₂O₃ films should provide good field effect passivation only for p- and p+-type Si surfaces. HfO2 thin films have not been practically tested for passivation of b-Si. HfO₂ could provide an alternative for n- and n+- type Si surface passivation since it has been shown to exhibit positive fixed charge. Using optical simulation by Finite-Difference Time Domain (FDTD) method, the possibility of b-Si passivation by HfO2 films has been analyzed. The FDTD modeling revealed that b-Si layers with HfO₂ films effectively suppress reflection in the wavelength range 400–1000 nm and across a wide range of incidence angles. The light-trapping performance primarily depends on geometry of the needles and film thickness. With the decrease of periodicity and increase of height of the needles, the reflectance decrease significantly, and the absorption increases significantly. Increase in thickness results in an even greater decrease in the calculated reflection coefficient of model structures and, consequently, to an improvement in the antireflection characteristics in the visible range. The excellent surface passivation and low reflectance results prove the potential of using the combination of the b-Si surface and the HfO₂ film for solar cells applications.

Keywords: antireflection, black silicon, HfO₂, passivation, simulation, solar cell

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Authors: Deb Kumar Shah, M. Shaheer Akhtar, Ha Ryeon Lee, O-Bong Yang, Chong Yeal Kim

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The crystalline silicon (Si) solar cells are highly renowned photovoltaic technology and well-established as the commercial solar technology. Most of the solar panels are globally installed with the crystalline Si solar modules. At the present scenario, the major photovoltaic (PV) market is shared by c-Si solar cells, but the cost of c-Si panels are still very high as compared with the other PV technology. In order to reduce the cost of Si solar panels, few necessary steps such as low-cost Si manufacturing, cheap antireflection coating materials, inexpensive solar panel manufacturing are to be considered. It is known that the antireflection (AR) layer in c-Si solar cell is an important component to reduce Fresnel reflection for improving the overall conversion efficiency. Generally, Si wafer exhibits the 30% reflection because it normally poses the two major intrinsic drawbacks such as; the spectral mismatch loss and the high Fresnel reflection loss due to the high contrast of refractive indices between air and silicon wafer. In recent years, researchers and scientists are highly devoted to a lot of researches in the field of searching effective and low-cost AR materials. Silicon nitride (SiNx) is well-known AR materials in commercial c-Si solar cells due to its good deposition and interaction with passivated Si surfaces. However, the deposition of SiNx AR is usually performed by expensive plasma enhanced chemical vapor deposition (PECVD) process which could have several demerits like difficult handling and damaging the Si substrate by plasma when secondary electrons collide with the wafer surface for AR coating. It is very important to explore new, low cost and effective AR deposition process to cut the manufacturing cost of c-Si solar cells. One can also be realized that a nano-texturing process like the growth of nanowires, nanorods, nanopyramids, nanopillars, etc. on Si wafer can provide a low reflection on the surface of Si wafer based solar cells. The above nanostructures might be enhanced the antireflection property which provides the larger surface area and effective light trapping. In this work, we report on the development of crystalline Si solar cells without using the AR layer. The Silicon wafer was modified by growing nanowires like Si nanostructures using the wet controlled etching method and directly used for the fabrication of Si solar cell without AR. The nanostructures over Si wafer were optimized in terms of sizes, lengths, and densities by changing the etching conditions. Well-defined and aligned wires like structures were achieved when the etching time is 20 to 30 min. The prepared Si nanostructured displayed the minimum reflectance ~1.64% at 850 nm with the average reflectance of ~2.25% in the wavelength range from 400-1000 nm. The nanostructured Si wafer based solar cells achieved the comparable power conversion efficiency in comparison with c-Si solar cells with SiNx AR layer. From this study, it is confirmed that the reported method (controlled wet etching) is an easy, facile method for preparation of nanostructured like wires on Si wafer with low reflectance in the whole visible region, which has greater prospects in developing c-Si solar cells without AR layer at low cost.

Keywords: chemical etching, conversion efficiency, silicon nanostructures, silicon solar cells, surface modification

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Authors: Latef M. Ali, Farah A. Abed

Abstract:

In this paper, the effect of the Barium fluoride (BaF2) layer on the absorption efficiency of GaAs/InAs nanowire solar cells was investigated using the finite difference time domain (FDTD) method. By inserting the BaF2 as antireflection with the dominant size of 10 nm to fill the space between the shells of wires on the Si (111) substrate. The absorption is significantly improved due to the strong reabsorption of light reflected at the shells and compared with the reference cells. The present simulation leads to a higher absorption efficiency (Qabs) and reaches a value of 97%, and the external quantum efficiencies (EQEs) above 92% are observed. The current density (Jsc) increases by 0.22 mA/cm2 and the open-circuit voltage (Voc) is enhanced by 0.11 mV.

Keywords: nanowire solar cells, absorption efficiency, photovoltaic, band structures, fdtd simulation

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Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

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Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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Authors: Latef M. Ali, Farah A. Abed, Zheen L. Mohammed

Abstract:

In this paper, the effect of the Barium fluoride (BaF2) layer on the absorption efficiency of GaAs/InAs nanowire solar cells was investigated using the finite difference time domain (FDTD) method. By inserting the BaF2 as antireflection with the dominant size of 10 nm to fill the space between the shells of wires on the Si (111) substrate. The absorption is significantly improved due to the strong reabsorption of light reflected at the shells and compared with the reference cells. The present simulation leads to a higher absorption efficiency (Qabs) and reaches a value of 97%, and the external quantum efficiencies (EQEs) above 92% are observed. The current density (Jsc) increases by 0.22 mA/cm2 and the open-circuit voltage (Voc) is enhanced by 0.11 mV. it explore the design and optimization of high-efficiency solar cells on low-reflective absorption efficiency of GaAs/InAs using simulation software tool. The changes in the core and shell diameters profoundly affects the generation and recombination process, thus affecting the conversion efficiency of solar cells.

Keywords: nanowire solar cells, absorption efficiency, photovoltaic, band structures, FDTD simulation

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Authors: Lawal Alkasim, Clement M. Gonah, Zainab S. Aliyu

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This work is focus on recovering silicon form photovoltaic cells and repurposing it toward the use in glass, ceramics or glass ceramics as it is made up of silicon material. Silicon is the main back-bone and responsible for the thermodynamic properties of glass, ceramics and glass ceramics materials. Antireflection silicon is soluble in hot alkali. Successfully the recovered material composed of silicon and silicon nitride of the A.R, with a small amount of silver, Aluminuim, lead & copper in the sunshine of crystalline/non-crystalline silicon solar cell. Aquaregia is used to remove the silver, Aluminium, lead & copper. The recovered material treated with hot alkali highly concentrated to produce sodium silicate, which is an alkali silicate glass (water glass). This type of glass is produced through chemical process, unlike other glasses that are produced through physical process of melting and non-crystalline solidification. It has showed a property of being alkali silicate glass from its solubility in water and insoluble in alcohol. The XRF analysis shows the presence of sodium silicate.

Keywords: unrecyclable solar PV, crystalline silicon, hot conc. alkali, sodium silicate

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Authors: Yongyi Chen, Li Qin, Peng Jia, Yongqiang Ning, Yun Liu, Lijun Wang

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The distributed feedback (DFB) lasers are indispensable in optical phase array (OPA) used for light detection and ranging (LIDAR) techniques, laser communication systems and integrated optics, thanks to their stable single longitudinal mode and narrow linewidth properties. Traditional index-coupled (IC) DFB lasers with uniform gratings have an inherent problem of lasing two degenerated modes. Phase shifts are usually required to eliminate the mode degeneration, making the grating structure complex and expensive. High-quality antireflection (AR) coatings on both lasing facets are also essential owing to the random facet phases introduced by the chip cleavage process, which means half of the lasing energy is wasted. Gain-coupled DFB (GC-DFB) lasers based on the periodic gain (or loss) are announced to have single longitudinal mode as well as capable of the unsymmetrical coating to increase lasing power and efficiency thanks to facet immunity. However, expensive and time-consuming technologies such as epitaxial regrowth and nanoscale grating processing are still required just as IC-DFB lasers, preventing them from practical applications and commercial markets. In this research, we propose a low-cost, single-mode regrowth-free GC-DFB laser based on periodic surface p-contacts. The gain coupling effect is achieved simply by periodic current distribution in the quantum well caused by periodic surface p-contacts, introducing very little index-coupling effect that can be omitted. It is prepared by i-line lithography, without nanoscale grating fabrication or secondary epitaxy. Due to easy fabrication techniques, it provides a method to fabricate practical low cost GC-DFB lasers for widespread practical applications.

Keywords: DFB laser, gain-coupled, low cost, periodic p-contacts

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Authors: Radik D. Aglyamov, Alexander K. Naumov, Alexey A. Shavelev, Oleg A. Morozov, Arsenij D. Shishkin, Yury P.Brodnikovsky, Alexander A.Karabutov, Alexander A. Oraevsky, Vadim V. Semashko

Abstract:

The development of medical optoacoustic tomography with the using human blood as endogenic contrast agent is constrained by the lack of reliable, easy-to-use and inexpensive sources of high-power pulsed laser radiation in the spectral region of 750-900 nm [1-2]. Currently used titanium-sapphire, alexandrite lasers or optical parametric light oscillators do not provide the required and stable output characteristics, they are structurally complex, and their cost is up to half the price of diagnostic optoacoustic systems. Here we are developing the lasers based on Cr:LiCaAlF6 crystals which are free of abovementioned disadvantages and provides intensive ten’s ns-range tunable laser radiation at specific absorption bands of oxy- (~840 nm) and -deoxyhemoglobin (~757 nm) in the blood. Cr:LiCAF (с=3 at.%) crystals were grown in Kazan Federal University by the vertical directional crystallization (Bridgman technique) in graphite crucibles in a fluorinating atmosphere at argon overpressure (P=1500 hPa) [3]. The laser elements have cylinder shape with the diameter of 8 mm and 90 mm in length. The direction of the optical axis of the crystal was normal to the cylinder generatrix, which provides the π-polarized laser action correspondent to maximal stimulated emission cross-section. The flat working surfaces of the active elements were polished and parallel to each other with an error less than 10”. No any antireflection coating was applied. The Q-switched master oscillator-power amplifiers laser system (MOPA) with the dual-Xenon flashlamp pumping scheme in diffuse-reflectivity close-coupled head were realized. A specially designed laser cavity, consisting of dielectric highly reflective reflectors with a 2 m-curvature radius, a flat output mirror, a polarizer and Q-switch sell, makes it possible to operate sequentially in a circle (50 ns - laser one pulse after another) at wavelengths of 757 and 840 nm. The programmable pumping system from Tomowave Laser LLC (Russia) provided independent to each pulses (up to 250 J at 180 μs) pumping to equalize the laser radiation intensity at these wavelengths. The MOPA laser operates at 10 Hz pulse repetition rate with the output energy up to 210 mJ. Taking into account the limitations associated with physiological movements and other characteristics of patient tissues, the duration of laser pulses and their energy allows molecular and functional high-contrast imaging to depths of 5-6 cm with a spatial resolution of at least 1 mm. Highly likely the further comprehensive design of laser allows improving the output properties and realizing better spatial resolution of medical multispectral optoacoustic tomography systems.

Keywords: medical optoacoustic, endogenic contrast agent, multiwavelength tunable pulse lasers, MOPA laser system

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