Search results for: Sook Yee Gan

Authors: L. S. Chuah, Z. Hassan, C. W. Chin, H. Abu Hassan

Abstract:

This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.

Keywords: Photoluminescence, porous GaN, electrochemical etching, Si, RF-MBE.

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Authors: Li Yuan, Weizhu Wang, Kean Boon Lee, Haifeng Sun, Susai Lawrence Selvaraj, Shane Todd, Guo-Qiang Lo

Abstract:

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement.

Keywords: AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

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The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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Authors: Emad A. Ahmed

Abstract:

Computer software to calculate electron mobility with respect to different scattering mechanism has been developed. This software is adopted completely Graphical User Interface (GUI) technique and its interface has been designed by Microsoft Visual basic 6.0. As a case study the electron mobility of n-GaN was performed using this software. The behavior of the mobility for n-GaN due to elastic scattering processes and its relation to temperature and doping concentration were discussed. The results agree with other available theoretical and experimental data.

Keywords: Electron mobility, relaxation time, GaN, Scattering, Computer software, computation physics.

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Authors: Srikanta Bose, Sudip K. Mazumder

Abstract:

We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.

Keywords: Molecular dynamics, GaN, 4H-SiC, hetero-epitaxy.

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Authors: Y. Liu, M. K. Bera, L. M. Kyaw, G. Q. Lo, E. F. Chor

Abstract:

The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum. A detailed mechanism of ohmic contact formation is discussed. By using different chemical analyses, it is anticipated that the formation of Hf-Al-N alloy might be responsible to form low temperature ohmic contacts for the Hf-based scheme to n-GaN.

Keywords: Gallium nitride, ohmic contact, Hafnium

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Authors: Anwar Jarndal

Abstract:

In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.

Keywords: GaN HEMT, computer-aided design & modeling, neural networks, genetic optimization.

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Authors: A. Douara, N. Kermas, B. Djellouli

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In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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Authors: Anwar H. Jarndal, Ahmed S. Elwakil

Abstract:

In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: Fractional-order modeling, GaN HEMT, Si-substrate, open de-embedding structure.

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Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (f_T) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p⁺pnn⁺ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×10⁸ A/m². The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×10⁸ A/m².

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.

Keywords: Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.

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Authors: Siti Aisya Gany, Swee Ching Tan, Sook Yee Gan

Abstract:

Diminished antioxidant defense or increased production of reactive oxygen species in the biological system can result in oxidative stress which may lead to various neurodegenerative diseases including Alzheimer’s disease (AD). Microglial activation also contributes to the progression of AD by producing several proinflammatory cytokines, nitric oxide (NO) and prostaglandin E2 (PGE2). Oxidative stress and inflammation have been reported to be possible pathophysiological mechanisms underlying AD. In addition, the cholinergic hypothesis postulates that memory impairment in patient with AD is also associated with the deficit of cholinergic function in the brain. Although a number of drugs have been approved for the treatment of AD, most of these synthetic drugs have diverse side effects and yield relatively modest benefits. Marine algae have great potential in pharmaceutical and biomedical applications as they are valuable sources of bioactive properties such as anticoagulation, antimicrobial, antioxidative, anticancer and anti-inflammatory. Hence, this study aimed to provide an overview of the properties of Malaysian seaweeds (Padina australis, Sargassum polycystum and Caulerpa racemosa) in inhibiting oxidative stress, neuroinflammation and cholinesterase enzymes. These seaweeds significantly exhibited potent DPPH and moderate superoxide anion radical scavenging ability (P<0.05). Hexane and methanol extracts of S. polycystum exhibited the most potent radical scavenging ability with IC50 values of 0.157±0.004mg/ml and 0.849±0.02mg/ml for DPPH and ABTS assays, respectively. Hexane extract of C. racemosa gave the strongest superoxide radical inhibitory effect (IC50 of 0.386±0.01mg/ml). Most seaweed extracts significantly inhibited the production of cytokine (IL-6, IL-1 β, TNFα) and NO in a concentration-dependent manner without causing significant cytotoxicity to the lipopolysaccharide (LPS)-stimulated microglia cells (P<0.05). All extracts suppressed cytokine and NO level by more than 50% at the concentration of 0.4mg/ml. In addition, C. racemosa and S. polycystum also showed anti-acetylcholinesterase activities with the IC50 values ranging from 0.086-0.115 mg/ml. Moreover, C. racemosa and P. australis were also found to be active against butyrylcholinesterase with IC50 values ranging from 0.118- 0.287 mg/ml.

Keywords: Anticholinesterase, antioxidative, neuroinflammation, seaweeds.

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Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 

Keywords: Electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission.

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Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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Authors: Yehjune Heo

Abstract:

Fingerprint Anti-Spoofing approaches have been actively developed and applied in real-world applications. One of the main problems for Fingerprint Anti-Spoofing is not robust to unseen samples, especially in real-world scenarios. A possible solution will be to generate artificial, but realistic fingerprint samples and use them for training in order to achieve good generalization. This paper contains experimental and comparative results with currently popular GAN based methods and uses realistic synthesis of fingerprints in training in order to increase the performance. Among various GAN models, the most popular StyleGAN is used for the experiments. The CNN models were first trained with the dataset that did not contain generated fake images and the accuracy along with the mean average error rate were recorded. Then, the fake generated images (fake images of live fingerprints and fake images of spoof fingerprints) were each combined with the original images (real images of live fingerprints and real images of spoof fingerprints), and various CNN models were trained. The best performances for each CNN model, trained with the dataset of generated fake images and each time the accuracy and the mean average error rate, were recorded. We observe that current GAN based approaches need significant improvements for the Anti-Spoofing performance, although the overall quality of the synthesized fingerprints seems to be reasonable. We include the analysis of this performance degradation, especially with a small number of samples. In addition, we suggest several approaches towards improved generalization with a small number of samples, by focusing on what GAN based approaches should learn and should not learn.

Keywords: Anti-spoofing, CNN, fingerprint recognition, GAN.

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

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Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

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Authors: Muhammad Atif, Cang Yan

Abstract:

The enhancement of low-light images is a significant area of study aimed at enhancing the quality of captured images in challenging lighting environments. Recently, methods based on Convolutional Neural Networks (CNN) have gained prominence as they offer state-of-the-art performance. However, many approaches based on CNN rely on increasing the size and complexity of the neural network. In this study, we propose an alternative method for improving low-light images using an Autoencoders-based multiscale knowledge transfer model. Our method leverages the power of three autoencoders, where the encoders of the first two autoencoders are directly connected to the decoder of the third autoencoder. Additionally, the decoder of the first two autoencoders is connected to the encoder of the third autoencoder. This architecture enables effective knowledge transfer, allowing the third autoencoder to learn and benefit from the enhanced knowledge extracted by the first two autoencoders. We further integrate the proposed model into the Pix-to-Pix GAN framework. By integrating our proposed model as the generator in the GAN framework, we aim to produce enhanced images that not only exhibit improved visual quality but also possess a more authentic and realistic appearance. These experimental results, both qualitative and quantitative, show that our method is better than the state-of-the-art methodologies.

Keywords: Low light image enhancement, deep learning, convolutional neural network, image processing.

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Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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Authors: Yee Yee Htun, Dr. Khaing Khaing Aye

Abstract:

Morphological operators transform the original image into another image through the interaction with the other image of certain shape and size which is known as the structure element. Mathematical morphology provides a systematic approach to analyze the geometric characteristics of signals or images, and has been applied widely too many applications such as edge detection, objection segmentation, noise suppression and so on. Fuzzy Mathematical Morphology aims to extend the binary morphological operators to grey-level images. In order to define the basic morphological operations such as fuzzy erosion, dilation, opening and closing, a general method based upon fuzzy implication and inclusion grade operators is introduced. The fuzzy morphological operations extend the ordinary morphological operations by using fuzzy sets where for fuzzy sets, the union operation is replaced by a maximum operation, and the intersection operation is replaced by a minimum operation. In this work, it consists of two articles. In the first one, fuzzy set theory, fuzzy Mathematical morphology which is based on fuzzy logic and fuzzy set theory; fuzzy Mathematical operations and their properties will be studied in details. As a second part, the application of fuzziness in Mathematical morphology in practical work such as image processing will be discussed with the illustration problems.

Keywords: Binary Morphological, Fuzzy sets, Grayscalemorphology, Image processing, Mathematical morphology.

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Authors: Lakshmi Prayaga, Chandra Prayaga. Aaron Wade, Gopi Shankar Mallu, Harsha Satya Pola

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Synthetic data generated by Generative Adversarial Networks and Autoencoders are becoming more common to combat the problem of insufficient data for research purposes. However, generating synthetic data is a tedious task requiring extensive mathematical and programming background. Open-source platforms such as the Synthetic Data Vault (SDV) and mostly AI have offered a platform that is user-friendly and accessible to non-technical professionals to generate synthetic data to augment existing data for further analysis. The SDV also provides for additions to the generic Generative Adversarial Networks (GAN) such as the Gaussian copula. We present the results from two synthetic data sets Conditional Tabular Generative Adversarial Network (CTGAN data and CTGAN with Gaussian Copula) generated by the SDV and report the findings. The results indicate that the Receiver Operating Characteristic Curve ROC and Area Under the curve AUC curves for the data generated by adding the layer of Gaussian copula are much higher than the data generated by the CTGAN.

Keywords: Synthetic data generation, Generative Adversarial Networks, GANs, Conditional Tabular GAN, CTGAN, Gaussian copula.

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Authors: Khoo Shin Yee, Lian Yee Cheng, Ong Zhi Chao, Zubaidah Ismail, Siamak Noroozi

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Structural frequency response testing is accurate in identifying the dynamic characteristic of a machinery structure. In practical perspective, conventional structural frequency response testing such as experimental modal analysis with impulse technique (also known as “impulse testing”) has limitation especially on its long acquisition time. The high acquisition time is mainly due to the redundancy procedure where the engineer has to repeatedly perform the test in 3 directions, namely the axial-, horizontal- and vertical-axis, in order to comprehensively define the dynamic behavior of a 3D structure. This is unfavorable to numerous industries where the downtime cost is high. This study proposes to reduce the testing time by using oblique impact. Theoretically, a single oblique impact can induce significant vibration responses and vibration modes in all the 3 directions. Hence, the acquisition time with the implementation of the oblique impulse technique can be reduced by a factor of three (i.e. for a 3D dynamic system). This study initiates an experimental investigation of impulse testing with oblique excitation. A motor-driven test rig has been used for the testing purpose. Its dynamic characteristic has been identified using the impulse testing with the conventional normal impact and the proposed oblique impact respectively. The results show that the proposed oblique impulse testing is able to obtain all the desired natural frequencies in all 3 directions and thus providing a feasible solution for a fast and time effective way of conducting the impulse testing.

Keywords: Frequency response function, impact testing, modal analysis, oblique angle, oblique impact.

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Authors: Liew Siaw Yee, Tahir Ahmad

Abstract:

In this paper, the Fuzzy Autocatalytic Set (FACS) is composed into Omega Algebra by embedding the membership value of fuzzy edge connectivity using the property of transitive affinity. Then, the Omega Algebra of FACS is a transformation semigroup which is a special class of semigroup is shown.

Keywords: Fuzzy autocatalytic set, omega algebra, semigroup, transformation semigroup.

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Authors: Rao Fu, Jie Chen, Shutian Zeng, Yiping Zhuang, Agus Sudjianto

Abstract:

Generative Adversarial Net (GAN) has proved to be a powerful machine learning tool in image data analysis and generation. In this paper, we propose to use Conditional Generative Adversarial Net (CGAN) to learn and simulate time series data. The conditions include both categorical and continuous variables with different auxiliary information. Our simulation studies show that CGAN has the capability to learn different types of normal and heavy-tailed distributions, as well as dependent structures of different time series. It also has the capability to generate conditional predictive distributions consistent with training data distributions. We also provide an in-depth discussion on the rationale behind GAN and the neural networks as hierarchical splines to establish a clear connection with existing statistical methods of distribution generation. In practice, CGAN has a wide range of applications in market risk and counterparty risk analysis: it can be applied to learn historical data and generate scenarios for the calculation of Value-at-Risk (VaR) and Expected Shortfall (ES), and it can also predict the movement of the market risk factors. We present a real data analysis including a backtesting to demonstrate that CGAN can outperform Historical Simulation (HS), a popular method in market risk analysis to calculate VaR. CGAN can also be applied in economic time series modeling and forecasting. In this regard, we have included an example of hypothetical shock analysis for economic models and the generation of potential CCAR scenarios by CGAN at the end of the paper.

Keywords: Conditional Generative Adversarial Net, market and credit risk management, neural network, time series.

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Authors: Miin-Shen Yang, Yee-Shan Pan

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Although there have been many researches in cluster analysis to consider on feature weights, little effort is made on sample weights. Recently, Yu et al. (2011) considered a probability distribution over a data set to represent its sample weights and then proposed sample-weighted clustering algorithms. In this paper, we give a sample-weighted version of generalized fuzzy clustering regularization (GFCR), called the sample-weighted GFCR (SW-GFCR). Some experiments are considered. These experimental results and comparisons demonstrate that the proposed SW-GFCR is more effective than the most clustering algorithms.

Keywords: Clustering; fuzzy c-means, fuzzy clustering, sample weights, regularization.

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Authors: Seong-Mo An, Rohit Ramesh, Young-Sook Lee, Wan-Young Chung

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The proper assessment of interaxial distance and convergence control are important factors in stereoscopic imaging technology to make an efficient 3D image. To control interaxial distance and convergence for efficient 3D shooting, horizontal 3D camera rig is designed using some hardware components like 'LM Guide', 'Goniometer' and 'Rotation Stage'. The horizontal 3D camera rig system can be properly aligned by moving the two cameras horizontally in same or opposite directions, by adjusting the camera angle and finally considering horizontal swing as well as vertical swing. In this paper, the relationship between interaxial distance and convergence angle control are discussed and intensive experiments are performed in order to demonstrate an easy and effective 3D shooting.

Keywords: Interaxial, Convergence, Stereoscopic, Horizontal 3D Camera Rig

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Authors: Yeon Ho You, Ji Sook Lee, Jin Hong Min

Abstract:

We examined whether children ( < 18 years old) had risk of intra-thoracic trauma during 'one-handed' chest compressions through MDCT images. We measured the length of the lower half of the sternum (Stotal/2~X). We also measured the distance from the diaphragm to the midpoint of the sternum (Stotal/2~D) and half the width of an adult hand (Wtotal/2). All the 1 year-old children had Stotal/2~X and Stotal/2~D less than Wtotal/2. Among the children aged 2 years, 6 (60.0%) had Stotal/2~X and Stotal/2~D less than Wtotal/2. Among those aged 3 years, 4 (26.7%) had Stotal/2~X and Stotal/2~D less than Wtotal/2, and among those aged 4 years, 2 (13.3%) had Stotal/2~X and Stotal/2~D less than Wtotal/2. However, Stotal/2~X and Stotal/2~D were greater than Wtotal/2 in children aged 5 years or more. We knew that small children may be at an increased risk of intra-thoracic trauma during 'one-handed' chest compressions.

Keywords: Cardiopulmonary resuscitation, child, compression.

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Authors: Nyein Nyein Soe, Thet Thet Han Yee, Soe Sandar Aung

Abstract:

This paper is proposed the dynamic simulation of small power induction motor based on Mathematical modeling. The dynamic simulation is one of the key steps in the validation of the design process of the motor drive systems and it is needed for eliminating inadvertent design mistakes and the resulting error in the prototype construction and testing. This paper demonstrates the simulation of steady-state performance of induction motor by MATLAB Program Three phase 3 hp induction motor is modeled and simulated with SIMULINK model.

Keywords: Squirrel cage induction motor, modeling andsimulation, MATLAB software, torque, speed.

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Authors: Nhat Khoa Tran, Yee Cheong Lam, Chee Yoon Yue, Ming Jen Tan

Abstract:

Metallic micro parts are playing an important role in micro-fabrication industry. Recently, we have demonstrated a new deformation mechanism for micro-formability of polycrystalline materials. Different depressed micro-features smaller than the grain size have been successfully fabricated on 6061 aluminum alloy (AA6061) substrates with good fidelity. To further verify this proposed deformation mechanism that grain size is not a limiting factor, we demonstrate here that in addition of depressed features, protruded micro-features on a polycrystalline substrate can similarly be fabricated.

Keywords: Deformation mechanism, grain size, microfabrication, polycrystalline materials.

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