Search results for: N. Massoum

Authors: S. Massoum, A. Bentaallah, A. Massoum, F. Benaimeche, P. Wira, A. Meroufel

Abstract:

This paper presents a speed fuzzy sliding mode controller for a vector controlled induction machine (IM) fed by a voltage source inverter (PWM). The sliding mode based fuzzy control method is developed to achieve fast response, a best disturbance rejection and to maintain a good decoupling. The problem with sliding mode control is that there is high frequency switching around the sliding mode surface. The FSMC is the combination of the robustness of Sliding Mode Control (SMC) and the smoothness of Fuzzy Logic (FL). To reduce the torque fluctuations (chattering), the sign function used in the conventional SMC is substituted with a fuzzy logic algorithm. The proposed algorithm was simulated by Matlab/Simulink software and simulation results show that the performance of the control scheme is robust and the chattering problem is solved.

Keywords: IM, FOC, FLC, SMC, and FSMC.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: N. Massoum, B. Bouazza, H. Tahir, C. Sayah, A. Guen Bouazza

Abstract:

to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material

Keywords: Monte Carlo simulation, steady-state electron transport, transient electron transport, alloy scattering.

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