Search results for: Aritra%20Acharyya

Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

Abstract:

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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Authors: Aritra Acharyya, Moumita Mukherjee, J. P. Banerjee

Abstract:

A generalized method for small-signal simulation of avalanche noise in Mixed Tunneling Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series resistance is taken into account. The method is applied to a millimeter-wave Double Drift Region (DDR) MITATT device based on Silicon to obtain noise spectral density and noise measure as a function of frequency for different values of series resistance. It is found that noise measure of the device at the operating frequency (122 GHz) with input power density of 1010 Watt/m2 is about 35 dB for hypothetical parasitic series resistance of zero ohm (estimated junction temperature = 500 K). Results show that the noise measure increases as the value of parasitic resistance increases.

Keywords: Noise Analysis, Silicon MITATT, Admittancecharacteristics, Noise spectral density.

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Authors: Partha Banerjee, Aritra Acharyya, Arindam Biswas, A. K. Bhattacharjee, Amit Banerjee, Hiroshi Inokawa

Abstract:

The effect of magnetic field on the noise performance of the magnetic field tunable avalanche transit time (MAGTATT) device based on Si, designed to operate at W-band (75 – 110 GHz), has been studied in this paper. A comprehensive two-dimensional (2D) model has been developed. The simulation results show that due to the presence of applied external transverse magnetic field, both the noise spectral density and noise measure of the MAGTATT device increase significantly. The noise performance of the device has been found to be further deteriorated if the magnetic field strength is further increased. Hence, in order to achieve the magnetic field tuning of the radio frequency (RF) properties of impact avalanche transit time (IMPATT) source, the noise performance of it has to be sacrificed in fair extent. Moreover, it clearly indicates that an IMPATT source must be covered with appropriate magnetic shielding material to avoid undesirable shift in operating frequency and output power and objectionable amount of deterioration in noise performance due to the presence of external magnetic field.

Keywords: 2-D model, IMPATT, MAGTATT, mm-wave, noise performance.

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