Search results for: etching

Authors: Pin-Hsu Kao, Wen-Shou Tseng, Hung-Ming Tai, Yuan-Ming Chang, Jenh-Yih Juang

Abstract:

We report a lithography-free approach to fabricate the biomimetics, quasi-beehive Si nanostructures (QBSNs), on Si-substrates. The self-assembled SiGe nanoislands via the strain induced surface roughening (Asaro-Tiller-Grinfeld instability) during in-situ annealing play a key role as patterned sacrifice regions for subsequent reactive ion etching (RIE) process performed for fabricating quasi-beehive nanostructures on Si-substrates. As the measurements of field emission, the bare QBSNs show poor field emission performance, resulted from the existence of the native oxide layer which forms an insurmountable barrier for electron emission. In order to dramatically improve the field emission characteristics, the platinum nanopillars (Pt-NPs) were deposited on QBSNs to form Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2), and the field enhancement factor (β-value) is significantly increased to 6067. More importantly, the uniform and continuous electrons excite light emission, due to the surrounding filed emitters from Pt-NPs/QBSNs, can be easily obtained. This approach does not require an expensive photolithographic process and possesses great potential for applications.

Keywords: Biomimetics, quasi-beehive Si, SiGe nanoislands, platinum nanopillars, field emission.

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Authors: Kanokkan Titipornpun, Tripob Bhongsuwan, Jan Gimsa

Abstract:

The Ko Samui district of Surat Thani province is located in the high amounts of equivalent uranium in the ground surface that is the source of radon. Our research in the Ko Samui district aimed at comparing the indoor radon concentrations between dwellings and workplaces. Measurements of indoor radon concentrations were carried out in 46 dwellings and 127 workplaces, using CR-39 alpha-track detectors in closed-cup. A total of 173 detectors were distributed in 7 sub-districts. The detectors were placed in bedrooms of dwellings and workrooms of workplaces. All detectors were exposed to airborne radon for 90 days. After exposure, the alpha tracks were made visible by chemical etching before they were manually counted under an optical microscope. The track densities were assumed to be correlated with the radon concentration levels. We found that the radon concentrations could be well described by a log-normal distribution. Most concentrations (37%) were found in the range between 16 and 30 Bq.m^-3. The radon concentrations in dwellings and workplaces varied from a minimum of 11 Bq.m^-3 to a maximum of 305 Bq.m^-3. The minimum (11 Bq.m^-3) and maximum (305 Bq.m^-3) values of indoor radon concentrations were found in a workplace and a dwelling, respectively. Only for four samples (3%), the indoor radon concentrations were found to be higher than the reference level recommended by the WHO (100 Bq.m^-3). The overall geometric mean in the surveyed area was 32.6±1.65 Bq.m^-3, which was lower than the worldwide average (39 Bq.m^-3). The statistic comparison of the geometric mean indoor radon concentrations between dwellings and workplaces showed that the geometric mean in dwellings (46.0±1.55 Bq.m^-3) was significantly higher than in workplaces (28.8±1.58 Bq.m^-3) at the 0.05 level. Moreover, our study found that the majority of the bedrooms in dwellings had a closed atmosphere, resulting in poorer ventilation than in most of the workplaces that had access to air flow through open doors and windows at daytime. We consider this to be the main reason for the higher geometric mean indoor radon concentration in dwellings compared to workplaces.

Keywords: CR-39 detector, indoor radon, radon in dwelling, radon in workplace.

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Authors: C. Virgilio, J. Carlier, P. Campistron, M. Toubal, P. Garnier, L. Broussous, V. Thomy, B. Nongaillard

Abstract:

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.

Keywords: Wetting, acoustic reflectometry, gigahertz, semiconductor.

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