Search results for: UV lasing
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 14

Search results for: UV lasing

14 Ultraviolet Lasing from Vertically-Aligned ZnO Nanowall Array

Authors: Masahiro Takahashi, Kosuke Harada, Shihomi Nakao, Mitsuhiro Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, Tatsuo Okada

Abstract:

Zinc oxide (ZnO) is one of the light emitting materials in ultraviolet (UV) region. In addition, ZnO nanostructures are also attracting increasing research interest as building blocks for UV optoelectronic applications. We have succeeded in synthesizing vertically-aligned ZnO nanostructures by laser interference patterning, which is catalyst-free and non-contact technique. In this study, vertically-aligned ZnO nanowall arrays were synthesized using two-beam interference. The maximum height and average thickness of the ZnO nanowalls were about 4.5 µm and 200 nm, respectively. UV lasing from a piece of the ZnO nanowall was obtained under the third harmonic of a Q-switched Nd:YAG laser excitation, and the estimated threshold power density for lasing was about 150 kW/cm2. Furthermore, UV lasing from the vertically-aligned ZnO nanowall was also achieved. The results indicate that ZnO nanowalls can be applied to random laser.

Keywords: zinc oxide, nanowall, interference laser, UV lasing

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13 Room Temperature Lasing from InGaAs Quantum Well Nanowires on Silicon-On-Insulator Substrates

Authors: Balthazar Temu, Zhao Yan, Bogdan-Petrin Ratiu, Sang Soon Oh, Qiang Li

Abstract:

Quantum confinement can be used to increase efficiency and control the emitted spectra in lasers and LEDs. In semiconductor nanowires, quantum confinement can be achieved in the axial direction by stacking multiple quantum disks or in the radial direction by forming a core-shell structure. In this work we demonstrate room temperature lasing in topological photonic crystal nanowire array lasers by using the InGaAs radial quantum well as the gain material. The nanowires with the GaAs/ InGaAs/ InGaP quantum well structure are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL) . Under optical pumping we show that the PCSEL lase at the wavelength of 1001 nm (undeformed pattern) and 966 nm (stretched pattern), with the lasing threshold of 103 µJ〖/cm 〗^2. We compare the lasing wavelengths from devices with three different nanowire diameters for undeformed compressed and stretched devices, showing that the lasing wavelength increases as the nanowire diameter increases. The impact of deforming the honeycomb pattern is studied, where it was found out that the lasing wavelengths of undeformed devices are always larger than the corresponding stretched or compressed devices with the same nanowire diameter. Using photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure.

Keywords: honeycomb PCSEL, nanowire laser, photonic crystal laser, quantum well laser

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12 A Low Cost Gain-Coupled Distributed Feedback Laser Based on Periodic Surface p-Contacts

Authors: Yongyi Chen, Li Qin, Peng Jia, Yongqiang Ning, Yun Liu, Lijun Wang

Abstract:

The distributed feedback (DFB) lasers are indispensable in optical phase array (OPA) used for light detection and ranging (LIDAR) techniques, laser communication systems and integrated optics, thanks to their stable single longitudinal mode and narrow linewidth properties. Traditional index-coupled (IC) DFB lasers with uniform gratings have an inherent problem of lasing two degenerated modes. Phase shifts are usually required to eliminate the mode degeneration, making the grating structure complex and expensive. High-quality antireflection (AR) coatings on both lasing facets are also essential owing to the random facet phases introduced by the chip cleavage process, which means half of the lasing energy is wasted. Gain-coupled DFB (GC-DFB) lasers based on the periodic gain (or loss) are announced to have single longitudinal mode as well as capable of the unsymmetrical coating to increase lasing power and efficiency thanks to facet immunity. However, expensive and time-consuming technologies such as epitaxial regrowth and nanoscale grating processing are still required just as IC-DFB lasers, preventing them from practical applications and commercial markets. In this research, we propose a low-cost, single-mode regrowth-free GC-DFB laser based on periodic surface p-contacts. The gain coupling effect is achieved simply by periodic current distribution in the quantum well caused by periodic surface p-contacts, introducing very little index-coupling effect that can be omitted. It is prepared by i-line lithography, without nanoscale grating fabrication or secondary epitaxy. Due to easy fabrication techniques, it provides a method to fabricate practical low cost GC-DFB lasers for widespread practical applications.

Keywords: DFB laser, gain-coupled, low cost, periodic p-contacts

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11 Spectroscopic Investigations of Nd³⁺ Doped Lithium Lead Alumino Borate Glasses for 1.06μM Laser Applications

Authors: Nisha Deopa, A. S. Rao

Abstract:

Neodymium doped lithium lead alumino borate glasses were synthesized with the molar composition 10Li₂O – 10PbO – (10-x) Al₂O₃ – 70B₂O₃ – xNd₂O₃ (where, x = 0.1, 0.5, 1.0, 1.5, 2.0 and 2.5 mol %) via conventional melt quenching technique to understand their lasing potentiality. From the absorption spectra, Judd-Ofelt intensity parameters along with various spectroscopic parameters have been estimated. The emission spectra recorded for the as-prepared glasses under investigation exhibit two emission transitions, ⁴F₃/₂→⁴I₁₁/₂ (1063 nm) and ⁴F₃/₂→⁴I₉/₂ (1350 nm) for which radiative parameters have been evaluated. The emission intensity increases with increase in Nd³⁺ ion concentration up to 1 mol %, and beyond concentration quenching took place. The decay profile shows single exponential nature for lower Nd³⁺ ions concentration and non-exponential for higher concentration. To elucidate the nature of energy transfer process, non-exponential decay curves were well fitted to Inokuti-Hirayama model. The relatively high values of emission cross-section, branching ratio, lifetimes and quantum efficiency suggest that 1.0 mol% of Nd³⁺ in LiPbAlB glasses is aptly suitable to generate lasing action in NIR region at 1063 nm.

Keywords: energy transfer, glasses, J-O parameters, photoluminescence

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10 Design and Simulation of Low Threshold Nanowire Photonic Crystal Surface Emitting Lasers

Authors: Balthazar Temu, Zhao Yan, Bogdan-Petrin Ratiu, Sang Soon Oh, Qiang Li

Abstract:

Nanowire based Photonic Crystal Surface Emitting Lasers (PCSELs) reported in the literature have been designed using a triangular, square or honeycomb patterns. The triangular and square pattern PCSELs have limited degrees of freedom in tuning the design parameters which hinders the ability to design high quality factor (Q-factor) devices. Nanowire based PCSELs designed using triangular and square patterns have been reported with the lasing thresholds of 130 kW/〖cm〗^2 and 7 kW/〖cm〗^2 respectively. On the other hand the honeycomb pattern gives more degrees of freedom in tuning the design parameters, which can allow one to design high Q-factor devices. A deformed honeycomb pattern device was reported with lasing threshold of 6.25 W/〖cm〗^2 corresponding to a simulated Q-factor of 5.84X〖10〗^5.Despite this achievement, the design principles which can lead to realization of even higher Q-factor honeycomb pattern PCSELs have not yet been investigated. In this work we show that through deforming the honeycomb pattern and tuning the heigh and lattice constants of the nanowires, it is possible to achieve even higher Q-factor devices. Considering three different band edge modes, we investigate how the resonance wavelength changes as the device is deformed, which is useful in designing high Q-factor devices in different wavelength bands. We eventually establish the design and simulation of honeycomb PCSELs operating around the wavelength of 960nm , in the O and the C band with Q-factors up to 7X〖10〗^7. We also investigate the Q-factors of undeformed device, and establish that the mode at the band edge close to 960nm can attain highest Q-factor of all the modes when the device is undeformed and the Q-factor degrades as the device is deformed. This work is a stepping stone towards the fabrication of very high Q-factor, nanowire based honey comb PCSELs, which are expected to have very low lasing threshold.

Keywords: designing nanowire PCSEL, designing PCSEL on silicon substrates, low threshold nanowire laser, simulation of photonic crystal lasers

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9 Vertically Coupled III-V/Silicon Single Mode Laser with a Hybrid Grating Structure

Authors: Zekun Lin, Xun Li

Abstract:

Silicon photonics has gained much interest and extensive research for a promising aspect for fabricating compact, high-speed and low-cost photonic devices compatible with complementary metal-oxide-semiconductor (CMOS) process. Despite the remarkable progress made on the development of silicon photonics, high-performance, cost-effective, and reliable silicon laser sources are still missing. In this work, we present a 1550 nm III-V/silicon laser design with stable single-mode lasing property and robust and high-efficiency vertical coupling. The InP cavity consists of two uniform Bragg grating sections at sides for mode selection and feedback, as well as a central second-order grating for surface emission. A grating coupler is etched on the SOI waveguide by which the light coupling between the parallel III-V and SOI is reached vertically rather than by evanescent wave coupling. Laser characteristic is simulated and optimized by the traveling-wave model (TWM) and a Green’s function analysis as well as a 2D finite difference time domain (FDTD) method for the coupling process. The simulation results show that single-mode lasing with SMSR better than 48dB is achievable, and the threshold current is less than 15mA with a slope efficiency of around 0.13W/A. The coupling efficiency is larger than 42% and possesses a high tolerance with less than 10% reduction for 10 um horizontal or 15 um vertical dislocation. The design can be realized by standard flip-chip bonding techniques without co-fabrication of III-V and silicon or precise alignment.

Keywords: III-V/silicon integration, silicon photonics, single mode laser, vertical coupling

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8 Powerful Laser Diode Matrixes for Active Vision Systems

Authors: Dzmitry M. Kabanau, Vladimir V. Kabanov, Yahor V. Lebiadok, Denis V. Shabrov, Pavel V. Shpak, Gevork T. Mikaelyan, Alexandr P. Bunichev

Abstract:

This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

Keywords: active vision systems, laser diode matrixes, thermal properties, radiation divergence

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7 Designing Nanowire Based Honeycomb Photonic Crystal Surface Emitting Lasers

Authors: Balthazar Temu, Zhao Yan, Bogdan-Petrin Ratiu, Sang Soon Oh, Qiang Li

Abstract:

Photonic Crystal Surface Emitting Lasers (PCSELs) are structures which are made up of a periodically repeating patterns with a unit cell consisting of changes in refractive index. The variation in refractive index can be achieved by etching air holes in a semiconductor material to get hole based PCSELs or by growing nanowires to get nanowire based PCSELs. As opposed to hole based PCSELs, nanowire based PCSELs can be integrated on silicon platform without threading dislocations, thanks to the small area of the nanowire that is in contact with silicon substrate that relaxes the strain. Nanowire based PCSELs reported in the literature have been designed using a triangular, square or honeycomb patterns. The triangular and square pattern PCSELs have limited degrees of freedom in tuning the design parameters which hinders the ability to design high quality factor (Q-factor) and/or variable wavelength devices. Nanowire based PCSELs designed using triangular and square patterns have been reported with the lasing thresholds of 130 kW/〖cm〗^2 and 7 kW/〖cm〗^2 respectively. On the other hand the honeycomb pattern gives more degrees of freedom in tuning the design parameters, which can allow one to design high Q-factor devices. A deformed honeycomb pattern device was reported with lasing threshold of 6.25 W/〖cm〗^2 corresponding to a simulated Q-factor of 5.84X〖10〗^5.Despite this achievement, the design principles which can lead to realization of even higher Q-factor honeycomb pattern PCSELs have not yet been investigated. In this work we study how the resonance wavelength and the Q-factor of three different resonance modes of the device vary when their design parameters are tuned. Through this study we establish the design and simulation of devices operating in 970nm wavelength band, O band and in the C band with quality factors up to 7X〖10〗^7 . We also investigate the quality factors of undeformed device and establish that the band edge close to 970nm can attain high quality factor when the device is undeformed and the quality factor degrades as the device is deformed.

Keywords: honeycomb PCSEL, nanowire laser, photonic crystal laser, simulation of photonic crystal surface emitting laser

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6 Optical Characterization of Transition Metal Ion Doped ZnO Microspheres Synthesized via Laser Ablation in Air

Authors: Parvathy Anitha, Nilesh J. Vasa, M. S. Ramachandra Rao

Abstract:

ZnO is a semiconducting material with a direct wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Microspheres with high sphericity and symmetry exhibit unique functionalities which makes them excellent omnidirectional optical resonators. Hence there is an advent interest in fabrication of single crystalline semiconductor microspheres especially magnetic ZnO microspheres, as ZnO is a promising material for semiconductor device applications. Also, ZnO is non-toxic and biocompatible, implying it is a potential material for biomedical applications. Room temperature Photoluminescence (PL) spectra of the fabricated ZnO microspheres were measured, at an excitation wavelength of 325 nm. The ultraviolet (UV) luminescence observed is attributed to the room-temperature free exciton related near-band-edge (NBE) emission in ZnO. Besides the NBE luminescence, weak and broad visible luminescence (~560nm) was also observed. This broad emission band in the visible range is associated with oxygen vacancies related to structural defects. In transition metal (TM) ion-doped ZnO, 3d levels emissions of TM ions will modify the inherent characteristic emissions of ZnO. A micron-sized ZnO crystal has generally a wurtzite structure with a natural hexagonal cross section, which will serve as a WGM (whispering gallery mode) lasing micro cavity due to its high refractive index (~2.2). But hexagonal cavities suffers more optical loss at their corners in comparison to spherical structures; hence spheres may be a better candidate to achieve effective light confinement. In our study, highly smooth spherical shaped micro particles with different diameters ranging from ~4 to 6 μm were grown on different substrates. SEM (Scanning Electron Microscopy) and AFM (Atomic Force Microscopy) images show the presence of uniform smooth surfaced spheres. Raman scattering measurements from the fabricated samples at 488 nm light excitation provide convincing supports for the wurtzite structure of the prepared ZnO microspheres. WGM lasing studies from TM-doped ZnO microparticles are in progress.

Keywords: laser ablation, microcavity, photoluminescence, ZnO microsphere

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5 Long Wavelength GaInNAs Based Hot Electron Light Emission VCSOAs

Authors: Faten Adel Ismael Chaqmaqchee

Abstract:

Optical, electrical and optical-electrical characterisations of surface light emitting VCSOAs devices are reported. The hot electron light emitting and lasing in semiconductor hetero-structure vertical cavity semiconductor optical amplifier (HELLISH VCSOA) device is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels. Ga0.35In0.65N0.02As0.08/GaAs was used as an active material for operation in the 1.3 μm window of the optical communications. The device has undoped Distributed Bragg Reflectors (DBRs) and the current is injected longitudinally, directly into the active layers and does not involve DBRs. Therefore, problems associated with refractive index contrast and current injection through the DBR layers, which are common with the doped DBRs in conventional VCSOAs, are avoided. The highest gain of around 4 dB is obtained for the 1300 nm wavelength operation.

Keywords: HELLISH, VCSOA, GaInNAs, luminescence, gain

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4 Spectroscopic and 1.08mm Laser Properties of Nd3+ Doped Oxy-Fluoro Borate Glasses

Authors: Swapna Koneru, Srinivasa Rao Allam, Vijaya Prakash Gaddem

Abstract:

The different concentrations of neodymium-doped (Nd-doped) oxy fluoroborate (OFB) glasses were prepared by melt quenching method and characterized through optical absorption, emission and decay curve measurements to understand the lasing potentialities of these glasses. Optical absorption spectra were recorded and have been analyzed using Judd–Ofelt theory. The dipole strengths are parameterized in terms of three phenomenological Judd–Ofelt intensity parameters Ωλ (λ=2, 4 and 6) to elucidate the glassy matrix around Nd3+ ion as well as to determine the 4F3/2 metastable state radiative properties such as the transition probability (AR), radiative lifetime (τR), branching ratios (βR) and integrated absorption cross-section (σa) have been measured for most of the fluorescent levels of Nd3+. The emission spectra recorded for these glasses exhibit two peaks at 1085 and 1328 nm corresponding to 4F3/2 to 4I11/2 and 4I13/2 transitions have been obtained for all the glasses upon 808 nm diode laser excitation in the near infrared region. The emission intensity of the 4F3/2 to 4I11/2 transition increases with increase of Nd3+ concentration up to 1 mol% and then concentration quenching is observed for 2.0 mol% of Nd3+ concentration. The lifetimes for the 4F3/2 level are found to decrease with increase in Nd2O3 concentration in the glasses due to the concentration quenching. The decay curves of all these glasses show single exponential behavior. The spectroscopy of Nd3+ in these glasses is well understood and laser properties can be accurately determined from measured spectroscopic properties. The results obtained are compared with reports on similar glasses. The results indicate that the present glasses could be useful for 1.08 µm laser applications.

Keywords: glasses, luminescence, optical properties, photoluminescence spectroscopy

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3 Photoluminescence and Energy Transfer Studies of Dy3+ Ions Doped Lithium Lead Alumino Borate Glasses for W-LED and Laser Applications

Authors: Nisha Deopa, A. S. Rao

Abstract:

Lithium Lead Alumino Borate (LiPbAlB) glasses doped with different Dy3+ ions concentration were synthesized to investigate their viability in solid state lighting (SSL) technology by melt quenching techniques. From the absorption spectra, bonding parameters (ð) were investigated to study the nature of bonding between Dy3+ ions and its surrounding ligands. Judd-Ofelt (J-O) intensity parameters (Ω = 2, 4, 6), estimated from the experimental oscillator strengths (fex) of the absorption spectral features were used to evaluate the radiative parameters of different transition levels. From the decay curves, experimental lifetime (τex) were measured and coupled with the radiative lifetime to evaluate the quantum efficiency of the as-prepared glasses. As Dy3+ ions concentration increases, decay profile changes from exponential to non-exponential through energy transfer mechanism (ETM) in turn decreasing experimental lifetime. In order to investigate the nature of ETM, non-exponential decay curves were fitted to Inkuti–Hirayama (I-H) model which further confirms dipole-dipole interaction. Among all the emission transition, 4F9/2  6H15/2 transition (483 nm) is best suitable for lasing potentialities. By exciting titled glasses in n-UV to blue regions, CIE chromaticity coordinates and Correlated Color Temperature (CCT) were calculated to understand their capability in cool white light generation. From the evaluated radiative parameters, CIE co-ordinates, quantum efficiency and confocal images it was observed that glass B (0.5 mol%) is a potential candidate for developing w-LEDs and lasers.

Keywords: energy transfer, glasses, J-O parameters, photoluminescence

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2 Comparison of Safety and Efficacy between Thulium Fibre Laser and Holmium YAG Laser for Retrograde Intrarenal Surgery

Authors: Sujeet Poudyal

Abstract:

Introduction: After Holmium:yttrium-aluminum-garnet (Ho: YAG) laser has revolutionized the management of urolithiasis, the introduction of Thulium fibre laser (TFL) has already challenged Ho:YAG laser due to its multiple commendable properties. Nevertheless, there are only few studies comparing TFL and holmium laser in Retrograde Intrarenal Surgery(RIRS). Therefore, this study was carried out to compare the efficacy and safety of thulium fiber laser (TFL) and holmium laser in RIRS. Methods: This prospective comparative study, which included all patients undergoing laser lithotripsy (RIRS) for proximal ureteric calculus and nephrolithiasis from March 2022 to March 2023, consisted of 63 patients in Ho:YAG laser group and 65 patients in TFL group. Stone free rate, operative time, laser utilization time, energy used, and complications were analysed between the two groups. Results: Mean stone size was comparable in TFL (14.23±4.1 mm) and Ho:YAG (13.88±3.28 mm) group, p-0.48. Similarly, mean stone density in TFL (1269±262 HU) was comparable to Ho:YAG (1189±212 HU), p-0.48. There was significant difference in lasing time between TFL (12.69±7.41 mins) and Ho:YAG (20.44±14 mins), p-0.012). TFL group had operative time of 43.47± 16.8 mins which was shorter than Ho:YAG group (58±26.3 mins),p-0.005. Both TFL and Ho:YAG groups had comparable total energy used(11.4±6.2 vs 12±8 respectively, p-0.758). Stone free rate was 87%for TFL, whereas it was 79.5% for Ho:YAG, p-0.25). Two cases of sepsis and one ureteric stricture were encountered in TFL, whereas three cases suffered from sepsis apart from one ureteric stricture in Ho:YAG group, p-0.62). Conclusion: Thulium Fibre Laser has similar efficacy as Holmium: YAG Laser in terms of safety and stone free rate. However, due to better stone ablation rate in TFL, it can become the game changer in management of urolithiasis in the coming days.

Keywords: retrograde intrarenal surgery, thulium fibre laser, holmium:yttrium-aluminum-garnet (ho:yag) laser, nephrolithiasis

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1 Dy3+ Ions Doped Single and Mixed Alkali Fluoro Tungstunate Tellurite Glasses for Laser and White LED Applications

Authors: Allam Srinivasa Rao, Ch. Annapurna Devi, G. Vijaya Prakash

Abstract:

A new-fangled series of white light emitting 1 mol% of Dy3+ ions doped Single-Alklai and Mixed-Alkai fluoro tungstunate tellurite glasses have been prepared using melt quenching technique and their spectroscopic behaviour was investigated by studying XRD, optical absorption, photoluminescence and lifetime measurements. The bonding parameter studies reveal the ionic nature of the Dy-O bond in the present glasses. From the absorption spectra, the Judd–Ofelt (J-O) intensity parameters have been determined which are used to explore the nature of bonding and symmetry orientation of the Dy–ligand field environment. The evaluated J-O parameters (Ω_4>Ω_2>Ω_6) for all the glasses are following the same trend. The photoluminescence spectra of all the glasses exhibit two intensified peaks in blue and Yellow regions corresponding to the transitions 4F9/2→6H15/2 (483 nm) and 4F9/2→6H13/2 (575 nm) respectively. From the photoluminescence spectra, it is observed that the luminescence intensity is maximum for Dy3+ ion doped potassium combination of fluoro tungstunate tellurite glass (TeWK: 1Dy). The J-O intensity parameters have been used to determine the various radiative properties for the different emission transitions from the 4F9/2 fluorescent level. The highest emission cross-section and branching ratio values observed for the 4F9/2→6H15/2 and 4F9/2→6H13/2 transitions suggest the possible laser action in the visible region from these glasses. By using the experimental lifetimes (τ_exp) measured from the decay spectral features and radiative lifetimes (τ_R), the quantum efficiencies (η) for all the glasses have been evaluated. Among all the glasses, the potassium combined fluoro tungstunate tellurite (TeWK:1Dy) glass has the highest quantum efficiency (94.6%). The CIE colour chromaticity coordinates (x, y), (u, v), colour correlated temperature (CCT) and Y/B ratio were also estimated from the photoluminescence spectra for different compositions of glasses. The (x, y) and (u, v) chromaticity colour coordinates fall within the white light region and the white light can be tuned by varying the composition of the glass. From all these studies, we are suggesting that the 1 mol% of Dy3+ ions doped TeWK glass is more suitable for lasing and White-LED applications.

Keywords: dysprosium, Judd-Ofelt parameters, photo luminescence, tellurite glasses

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