Search results for: Wirtzite nitrides

Authors: Bijay Kumar Sahoo, Ashok Kumar Srivastav

Abstract:

We have investigated the effect of piezoelectric (PZ) polarization property in binary as well as in ternary wurtzite nitrides. It is found that with the presence of PZ polarization property, the phonon group velocity is modified. The change in phonon group velocity due to PZ polarization effect directly depends on piezoelectric tensor value. Using different piezoelectric tensor values recommended by different workers in the literature, percent change in group velocities of phonons has been estimated. The Debye temperatures and frequencies of binary nitrides GaN, AlN and InN are also calculated using the modified group velocities. For ternary nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group velocities have been calculated as a functions of composition. A small positive bowing is observed in phonon group velocities of ternary alloys. Percent variations in phonon group velocities are also calculated for a straightforward comparison among ternary nitrides. The results are expected to show a change in phonon relaxation rates and thermal conductivity of III-nitrides when piezoelectric polarization property is taken into consideration.

Keywords: Wirtzite nitrides, piezoelectric polarization, Phonon group velocity, Debye frequency and Debye temperature.

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Authors: M. Maronek, J. Barta, P. Palcek, K. Ulrich

Abstract:

Low carbon deep drawing steel DC 01 according to EN 10130-91 was nitrooxidized in dissociated ammonia at 580°C/45 min and consequently oxidised at 380°C/5 min in vapour of distilled water. Material after nitrooxidation had 54 % increase of yield point, 34 % increase of strength and 10-times increased resistance to atmospheric corrosion in comparison to the material before nitrooxidation. The microstructure of treated material consisted of thin ε-phase layer connected to layer containing precipitated massive needle shaped Fe4N - γ' nitrides. This layer passed to a diffusion layer consisting of fine irregular shaped Fe16N2 - α'' nitrides regularly dispersed in ferritic matrix. Fatigue properties were examined under bending load with frequency of 20 kHz and sinusoidal symmetric cycle. The results confirmed positive influence of nitrooxidation on fatigue properties as fatigue limit of treated material was double in comparison to untreated material.

Keywords: steel sheet, fatigue, nitrooxidation, S-N diagram

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Authors: N. H. Abd Raof, H. Abu Hassan, S.K. Mohd Bakhori, S. S. Ng, Z. Hassan

Abstract:

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Keywords: HRXRD, nitrides, PL, quaternary, UV-VIS.

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