Search results for: Shabbir H. Gheewala
5 Emission Assessment of Rice Husk Combustion for Power Production
Authors: Thipwimon Chungsangunsit, Shabbir H. Gheewala, Suthum Patumsawad
Abstract:
Rice husk is one of the alternative fuels for Thailand because of its high potential and environmental benefits. Nonetheless, the environmental profile of the electricity production from rice husk must be assessed to ensure reduced environmental damage. A 10 MW pilot plant using rice husk as feedstock is the study site. The environmental impacts from rice husk power plant are evaluated by using the Life Cycle Assessment (LCA) methodology. Energy, material and carbon balances have been determined for tracing the system flow. Carbon closure has been used for describing of the net amount of CO2 released from the system in relation to the amount being recycled between the power plant and the CO2 adsorbed by rice husk. The transportation of rice husk to the power plant has significant on global warming, but not on acidification and photo-oxidant formation. The results showed that the impact potentials from rice husk power plant are lesser than the conventional plants for most of the categories considered; except the photo-oxidant formation potential from CO. The high CO from rice husk power plant may be due to low boiler efficiency and high moisture content in rice husk. The performance of the study site can be enhanced by improving the combustion efficiency.
Keywords: Environmental impact, Fossil fuels, Life Cycle Assessment (LCA), Renewable energy, Rice husk
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 74404 Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology
Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.
Abstract:
In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.
Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 11383 Designing of a Non-Zero Dispersion Shifted Fiber with Ultra-High Birefringence and High Non-Linearity
Authors: Shabbir Chowdhury, Japatosh Mondal
Abstract:
Photonic Crystal Fiber (PCF) uses are no longer limited to telecommunication only rather it is now used for many sensors-based fiber optics application, medical science, space application and so on. In this paper, the authors have proposed a microstructure PCF that is designed by using Finite Element Method (FEM) based software. Besides designing, authors have discussed the necessity of the characteristics that it poses for some specified applications because it is not possible to have all good characteristics from a single PCF. Proposed PCF shows the property of ultra-high birefringence (0.0262 at 1550 nm) which is more useful for sensor based on fiber optics. The non-linearity of this fiber is 50.86 w-1km-1 at 1550 nm wavelength which is very high to guide the light through the core tightly. For Perfectly Matched Boundary Layer (PML), 0.6 μm diameter is taken. This design will offer the characteristics of Nonzero-Dispersion-Shifted Fiber (NZ-DSF) for 450 nm waveband. Since it is a software-based design and no practical evaluation has made, 2% tolerance is checked and the authors have found very small variation of the characteristics.
Keywords: Chromatic dispersion, birefringence, NZ-DSF, FEM, non-linear coefficient, DCF, waveband.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4862 Cultural Diversity and Challenges for Female Entrepreneurs: Empirical Study of an Emerging Economy
Authors: Amir Ikram, Qin Su, Muhammad Fiaz, Muhammad Waqas Shabbir
Abstract:
Women entrepreneurship witnessed a healthy rise in the last decade or so, and the scenario in Pakistan is not different. However female leaders are facing various, cultural, career oriented, and professional challenges. The study investigates the impact of social and industry-specific challenges on female entrepreneurship; social challenges was evaluated in terms of culture, and industry-specific challenges was measured in terms of team management and career growth. Purposive sampling was employed to collect data from 75 multicultural organizations operating in the culturally diverse and historic city of Lahore, Pakistan. Cronbach’s alpha was conducted to endorse the reliability of survey questionnaire, while correlation and regression analysis were used to test hypotheses. Industry-specific challenges were found to be more significant as compared to cultural factors. The paper also highlights the importance of female entrepreneurship for emerging economies, and suggests that bringing women to mainstream professions can lead to economic success.Keywords: Cultural challenges, emerging economy, female entrepreneurship, leadership.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 19251 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit
Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam
Abstract:
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.
Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1802