Search results for: Paraskevi Theodorou
2 User Requirements Analysis for the Development of Assistive Navigation Mobile Apps for Blind and Visually Impaired People
Authors: Paraskevi Theodorou, Apostolos Meliones
In the context of the development process of two assistive navigation mobile apps for blind and visually impaired people (BVI) an extensive qualitative analysis of the requirements of potential users has been conducted. The analysis was based on interviews with BVIs and aimed to elicit not only their needs with respect to autonomous navigation but also their preferences on specific features of the apps under development. The elicited requirements were structured into four main categories, namely, requirements concerning the capabilities, functionality and usability of the apps, as well as compatibility requirements with respect to other apps and services. The main categories were then further divided into nine sub-categories. This classification, along with its content, aims to become a useful tool for the researcher or the developer who is involved in the development of digital services for BVI.
Keywords: Accessibility, assistive mobile apps, blind and visually impaired people, user requirements analysis.Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 780
1 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage
Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou
The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 566