Search results for: Ashot M. Khachatryan
5 New Drug Delivery System for Cancer Therapy
Authors: Emma R. Arakelova, Stepan G. Grigoryan, Ashot M. Khachatryan, Karapet E. Avjyan, Lilia M. Savchenko, Flora G. Arsenyan
Abstract:
The paper presents a new drugs delivery system, based on the thin film technology. As a model antitumor drug, highly toxic doxorubicin is chosen. The system is based on the technology of obtaining zinc oxide composite of doxorubicin by deposition of nanosize ZnO films on the surface of doxorubicin coating on glass substrate using DC magnetron sputtering of zinc targets in Ar:O2 medium at room temperature. For doxorubicin zinc oxide compositions in the form of coatings and gels with 180-200nm thick ZnO films, higher (by a factor 2) in vivo (ascitic Ehrlich's carcinoma) antitumor activity is observed at low doses of doxorubicin in comparison with that of the initial preparation at therapeutic doses. The vector character of the doxorubicin zinc oxide composite transport to tumor tissues ensures the increase in antitumor activity as well as decrease of toxicity in comparison with the initial drug.
Keywords: Antitumor activity, doxorubicin, DC magnetron sputtering, zinc oxide.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 36144 Electrotechnology for Silicon Refining: Plasma Generator and Arc Furnace: Installations and Theoretical Base
Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian
Abstract:
The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 12073 On-Chip Aging Sensor Circuit Based on Phase Locked Loop Circuit
Authors: Ararat Khachatryan, Davit Mirzoyan
Abstract:
In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage.
Keywords: Nanoscale, aging, effect, NBTI, HCI.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 14232 Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit
Authors: Davit Mirzoyan, Ararat Khachatryan
Abstract:
A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.Keywords: Detection, monitoring, process corner, process variation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 13251 Speciation of Iron (III) Oxide Nanoparticles and Other Paramagnetic Intermediates during High-Temperature Oxidative Pyrolysis of 1-Methylnaphthalene
Authors: Michael P. Herring, Lavrent Khachatryan, Barry Dellinger
Abstract:
Low Temperature Matrix Isolation - Electron Paramagnetic Resonance (LTMI-EPR) Spectroscopy was utilized to identify the species of iron oxide nanoparticles generated during the oxidative pyrolysis of 1-methylnaphthalene (1-MN). The otherwise gas-phase reactions of 1--MN were impacted by a polypropylenimine tetra-hexacontaamine dendrimer complexed with iron (III) nitrate nonahydrate diluted in air under atmospheric conditions. The EPR fine structure of Fe (III)2O3 nanoparticles clusters, characterized by gfactors of 2.00, 2.28, 3.76 and 4.37 were detected on a cold finger maintained at 77 K after accumulation over a multitude of experiments. Additionally, a high valence Fe (IV) paramagnetic intermediate and superoxide anion-radicals, O2•- adsorbed on nanoparticle surfaces in the form of Fe (IV) --- O2•- were detected from the quenching area of Zone 1 in the gas-phase.Keywords: Cryogenic trapping, EPFRs, dendrimer, Fe2O3 doped silica, soot.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2093