1/f Noise in Quantum-Size Heteronanostructures Based On GaAs and Alloys

Authors: Alexey V. Klyuev, Arkady. V. Yakimov

Abstract:

The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and alloys, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied.

Keywords: Lasers, light-emitting diodes, quantum dots, quantum wells, 1/f noise.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1096984

References:

[1] A. Dandridge and H. F. Taylor, Correlation of low frequency intensity and frequency fluctuations in GaAlAs lasers, IEEE Journal of Quantum Electronics 18 (10) (1982) 1738–1750.
[2] J. J. Brophy, Fluctuations in luminescent junctions, J. of Applied Physics 38 (1967) 2465–2469.
[3] R. J. Fronen and L. K. J. Vandamme, Low-Frequency Intensity Noise in Semiconductor Lasers, IEEE Journal of Quantum Electronics 24(5) (1988) 724–736.
[4] R. Schimpe, Theory of intensity noise in semiconductor laser emission, Z. Phys. B Condensed Matter 52 (1983) 289–294.
[5] S.-L. Jang and J.-Y. Wu, Low frequency current and intensity noise in AlGaAs laser diodes , Solid-State Electronics 36 (1993) 189–196.
[6] S.-L. Jang, K.-Y. Chang and J.-K. Hsu, Evidence of optical generationrecombination noise, Solid-State Electronics 38 (1995) 1449–1453.
[7] A. A. Balandin, Low-frequency 1/f noise in graphene devices, Nature Nanotechnology 8 (2013) 549-555.
[8] Sh. Kogan, Electronic Noise and Fluctuations in Solids, Cambridge University Press (2008).
[9] E. I. Shmelev, A. V. Klyuev, A. V. Yakimov, Complexes of Spatially Multistable Defects as the Source of 1/f Noise in GaAs Devices, Fluctuation and Noise Letters 12 (1) (2013) 1350008-1–1350008-13. (DOI: 10.1142/S0219477513500089)
[10] A. V. Klyuev, E. I. Shmelev, and A. V. Yakimov, Modification of Van der Ziel relation for spectrum of noise in p–n junction, Fluctuation and Noise Letters 11 (2) (2012) 1250015-1–1250015-11. (DOI: 10.1142/S0219477512500150)
[11] A. V. Belyakov, L. K. J. Vandamme, M. Yu. Perov, and A. V. Yakimov, The different physical origins of 1/F noise and superimposed RTS noise in light-emitting quantum dot diodes, Fluctuation and Noise Letters 3 (3) (2003) L325–L339.
[12] A. V. Klyuev, Cumulant analysis of Detection of random process Using a Schottky Diode with δ-Doping, International Journal of Modern Physics B 27 (13) (2013) 1350049-1–1350049-12. (DOI: 10.1142/S0217979213500495)
[13] A. V. Klyuev, Detection of a random process with the use of a deltadoped Schottky diode, Journal of Communications Technology and Electronics 58 (2) (2013) 178-184. (DOI: 10.1134/S1064226913010063)
[14] E. Lanzara, R. N. Mantegna, B. Spagnolo and R. Zangara, Experimental Study of a Non Linear System in the Presence of Noise: The Stochastic Resonance, Am. J. Phys. 65 (4) (1997) 341-349.
[15] R. N. Mantegna and B. Spagnolo, Stochastic Resonance in a Tunnel Diode in the Presence of White or Colored Noise, Nuovo Cimento D 17 (1995) 873-881.
[16] S. M. Bezrukov, L. K. J. Vandamme, and L. B. Kish, Special Section on 1/F Noise: A Preface, Fluctuation and Noise Letters 10 (4) (2011) 417–418.
[17] Noise in Electron Devices, Ch. 7, ed. K. D. Smullin and A. Haus, Cambridge, MA, MIT Press (1959).
[18] A. N. Malakhov, Fluctuations in resistance of semiconductor detectors, Radiotehnika i Elektronika, 3 (1958) 547–551 (in Russian).
[19] E. L. Wall, Edge injection currents and their effects on 1/f noise in planar Schottky diodes, Solid-State Electronics 19 (5) (1976) 389–396.
[20] A. E. Klimov, I. G. Neizvestniy, V. N. Shumskoy, Excess noise in diodes based on Pb1-xSnxTe and its relation with I-V characteristics, FTP 17 (10) (1983) 1766–1770 (in Russian).
[21] A. V. Klyuev, Low frequency noise in nanoscale semiconductor structures: sources, measurement, methods of analysis, LAP LAMBERT Academic Publishing (2011). (in Russian) (ISBN: 978-3- 8433-2204-1)
[22] F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Experimental studies on 1/f noise, Reports on Progress in Physics 44 (3) (1981) 479–532.
[23] T. G. M. Kleinpenning, 1/f noise in p-n diodes, Physica 98B+C (1980) 289–299.
[24] E. Fred Schubert, Light-Emitting Diode, 2nd ed. New York: Cambridge (2006).
[25] B.L. Sharma, R.K. Purohit, Semiconductor Heterojunctions, Pergamon Press (1964).
[26] F. A. Padovani, R. Stratton, Field and Thermionic- field emission in Shottky barriers, Solid-State Electronics 9 (1966) 695–707.
[27] V. B. Orlov and A. V. Yakimov, The further interpretation of Hooge’s 1/f noise formula, Physica 162B (1990) 13–20.
[28] Sh. M. Kogan, Low-frequency current noise with spectrum of 1/f type in solids, Sov. Phys. - Usp. 28(2) (1985) 170.
[29] A. V. Belyakov, A. V. Klyuev, and A. V. Yakimov, 1/F Noise In Leakage Current Of Nanoscale Light Emitting Structures, Proc. 19th Int. Conf. “Noise and Fluctuations, ICNF 2007”. Japan, Tokyo, 9-14 September 2007. Ed. by M. Tacano, Yo. Yamamoto, M. Nakao. AIP Conf. Proc. 922 (2007) 329–332.
[30] A. V. Belyakov, A. V. Klyuev, and A. V. Yakimov, Manifestation of 1/f leakage noise in nanoscale light-emitting structures, Radiophysics and Quantum Electronics. 51 (2) (2008) 134–144.
[31] A. A. Andronov, A. V. Belyakov, V. A. Guryev and A. V. Yakimov, The interactive visual development of applications of automation scientific and industrial measuring and control systems by means of LabVIEW 6i National Instruments, Proceedings of the NATO Project SfP–973799 Semiconductors 2nd Workshop, Nizhni Novgorod (2002) 38–46; http://www.rf.unn.ru/NATO/index.html.
[32] A. V. Klyuev, and A. V. Yakimov, 1/f noise in GaAs nanoscale lightemitting structures, Physica B, Vol. 440, (2014), p. 145-151, http://dx.doi.org/10.1016/j.physb.2014.01.021
[33] A. V. Klyuev, E. I. Shmelev, and A. V. Yakimov, Physical origins of 1/f noise in Si delta-doped Schottky diodes, Fluctuation and Noise Letters, Vol. 13, No. 1 (2014) 1450003 (16 pages), World Scientific Publishing Company, DOI: 10.1142/S0219477514500035.
[34] A. V. Klyuev, Sources of 1/f noise in semiconductor nanoscale lightemitting structures based on GaAs and alloys. Nanomaterials and Nanostructures − XXI Century, Vol. 1, No. 5 (2014).
[35] A.V. Klyuev, V.P. Samarin, V.F. Klyuev, “Algorithm of Measurement of Noise Signal Power in the Presence of Narrowband Interference.” ICECECE 2012: International Conference on Electrical, Computer, Electronics and Communication Engineering, 6–7 December 2012, Australia, Perth. — Perth, 2012. — pp. 15–18.
[36] V.F. Klyuev, V.P. Samarin, A.V. Klyuev, “Estimation of efficiency of algorithm of measurement of power of noise on the background of narrowband interference.” Information-measuring and Control Systems, vol. 10, no 6, pp.72-75, 2012.
[37] V.F. Klyuev, V.P. Samarin, A.V. Klyuev, “Algorithm of measurement of power of noise on the background of irregular pulse interferences.” Information-measuring and Control Systems, vol. 10, no 1, pp.76-79, 2012.
[38] A.V. Klyuev, O.A. Feodorov, V.P. Samarin, V.F. Klyuev, “Estimation of average power of pulse interference at measurement of noise”. Works of the fourteenth scientific conference on the radiophysicist on May, 7th, 2010, devoted 80-th anniversary from the date of Yu.N.Babanov's birth., pp. 209-210.
[39] A.V. Klyuev, A.V. Shabin, V.P. Samarin, V.F.Klyuev, “Measurement of power of noise signal on a background of pulse interference”. Works of the fourteenth scientific conference on the radiophysicist on May, 7th, 2010, devoted 80-th anniversary from the date of Yu.N. Babanov's birth., pp. 228-310.
[40] V.F. Klyuev, V.P. Samarin, A.V. Klyuev, “Power measurement algorithm of input mixture components of the noise signal and narrowband interference.” Vestnik of UNN, no 5(1), pp. 51- 55, 2012.
[41] A.V. Klyuev, A.V. Shabin, V.P. Samarin, V.F. Klyuev, “Measurement of noise signals power on a background of pulse interferences.” XVII Nizhniy Novgorod session of young scientists. Engineering science, 2012. pp. 252-255.
[42] A.V. Klyuev, O.A. Feodorov, V.P. Samarin, V.F. Klyuev, “Modelling of a measuring instrument of noise signals power on a background of a narrowband Interference.” XVII Nizhniy Novgorod session of young scientists. Engineering science, 2012 pp. 247-251.
[43] A.V. Klyuev, A.V. Shabin, V.P. Samarin, V.F. Klyuev, “Modelling of a measuring instrument of noise signals power on a background of pulse interference in the programming environment LabVIEW.” Works of the fifteenth scientific conference on the radiophysicist on May, 12th, 2011, devoted 110-th anniversary from the date of A.A.Andronov's birth. pp. 178-179.
[44] A.V. Klyuev, O.A. Feodorov, V.P. Samarin, V.F. Klyuev, “Algorithm LabVIEW of measurement of noise signals power on a background of a narrowband interference. Works of the fifteenth scientific conference on the radiophysicist on May, 12th, 2011, devoted 110-th anniversary from the date of A.A.Andronov's birth. pp. 179-181.
[45] Al.V. Klyuev, V.P. Samarin, V.F. Klyuev, An.V. Klyuev “Nonlinear Power Measurement Algorithm of the Input Mix Components of the Noise Signal and Pulse Interference.” ICECECE 2013: International Conference on Electrical, Computer, Electronics and Communication Engineering, 20–21 November 2013, South Africa, Cape Town. — Cape Town, 2013. — pp. 797–800.