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Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits

Authors: Saeed H. Nasiri, Rahim Faez, Bita Davoodi, Maryam Farrokhi

Abstract:

Bode stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for the first time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry of each tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable.

Keywords: Bode stability criterion, Interconnects, Interlayer via, Single wall carbon nanotubes, Transmission line method, Time domain analysis

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1070771

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