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A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications

Authors: M.J. Sharifi

Abstract:

Several models have been introduced so far for single electron box, SEB, which all of them were restricted to DC response and or low temperature limit. In this paper we introduce a new time dependent, high temperature analytical model for SEB for the first time. DC behavior of the introduced model will be verified against SIMON software and its time behavior will be verified against a newly published paper regarding step response of SEB.

Keywords: Single electron box, SPICE, SIMON, Timedependent, Circuit model.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1058441

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References:


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