A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications

Authors: M.J. Sharifi

Abstract:

Several models have been introduced so far for single electron box, SEB, which all of them were restricted to DC response and or low temperature limit. In this paper we introduce a new time dependent, high temperature analytical model for SEB for the first time. DC behavior of the introduced model will be verified against SIMON software and its time behavior will be verified against a newly published paper regarding step response of SEB.

Keywords: Single electron box, SPICE, SIMON, Timedependent, Circuit model.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1058441

References:

[1] F. Zhang, R. Tang, Y.-B. Kim, "SET Based Nano Circuit Simulation and Design Method Using HSPICE," Microelectronics Journal, 2005.
[2] W Y. S. Yu, H. S. Lee, and S. W. Hwang, "SPICE Macro-Modeling for the Compact Simulation of Single Electron Circuits," Journal of Korean Physical Society, vol. 33, pp. S269-S272, 1998.
[3] M. J. Sharifi and S. Paki, "A Simple SPICE Model for Single-Electron Box and Its Applications," Proceedings of WASET, 37, 1054-1057, 2009.
[4] K. K. Likharev, "Single-Electron Devices and Their Applications," Proc. IEEE, vol. 87, pp. 606-632, 1999.
[5] M.J. Sharifi and F. Ahmadi Gooraji, "A new SPICE-compatible circuit model for a single-electron BOX and its application to the bit error rate and maximum operating frequency of logic gates", Submitted to Journal of Circuits, Systems and Computers, 2010.
[6] C. Wasshuber, H. Kosina, S. Selberherr; SIMON-A Simulator for Single-Electron Tunnel Devices and Circuits; Transaction on Computer Aided Design of Integrated Circuits and Systems, Vol. 16, N0. 9, 1997
[7] M.J. Sharifi, "Transient Response of Single-electron Devices and Their Time Constants", J. of. Korean Physical Society, Vol. 58, No. 1, Jan. 2011.