%0 Journal Article
	%A M.J. Sharifi
	%D 2011
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 52, 2011
	%T A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications
	%U https://publications.waset.org/pdf/3075
	%V 52
	%X Several models have been introduced so far for single
electron box, SEB, which all of them were restricted to DC response
and or low temperature limit. In this paper we introduce a new time
dependent, high temperature analytical model for SEB for the first
time. DC behavior of the introduced model will be verified against
SIMON software and its time behavior will be verified against a
newly published paper regarding step response of SEB.
	%P 538 - 540