Commenced in January 2007
Paper Count: 30169
Physical-Mechanical Characteristics of Monocrystalline Si1-xGex (x≤0,02) Solid Solutions
Abstract:Si-Ge solid solutions (bulk poly- and mono-crystalline samples, thin films) are characterized by high perspectives for application in semiconductor devices, in particular, optoelectronics and microelectronics. From this point of view, complex studying of structural state of the defects and structural-sensitive physical properties of Si-Ge solid solutions depending on the contents of Si and Ge components is very important. Present work deals with the investigations of microstructure, microhardness, internal friction and shear modulus of Si1-xGex(x≤0,02) bulk monocrystals conducted at room temperature. Si-Ge bulk crystals were obtained by Czochralski method in  crystallographic direction. Investigated monocrystalline Si-Ge samples are characterized by p-type conductivity and carriers’ concentration 5.1014-1.1015cm-3. Microhardness was studied on Dynamic Ultra Micro hardness Tester DUH-201S with Berkovich indenter. Investigate samples are characterized with 0,5x0,5x(10-15)mm3 sizes, oriented along  direction at torsion oscillations ≈1Hz, multistage changing of internal friction and shear modulus has been revealed in an interval of strain amplitude of 10-5-5.10-3. Critical values of strain amplitude have been determined at which hysteretic changes of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also determined. Dynamic mechanical characteristics decreasing trend is shown with increasing Ge content in Si-Ge solid solutions. Observed changes are discussed from the point of view of interaction of various dislocations with point defects and their complexes in a real structure of Si-Ge solid solutions.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1109331Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1053
 A. Londos, A. Andrianakis, V. V. Emtsev, G. A. Oganesyan, H. Ohyama. The effects of germanium doping on the evolution of defects in silicon. Materials Science and Engineering B, 154-155 (2008), 133-136.
 D. Yang, J. Chen, H. Li, X. Ma, D. Tian, L. Li, D. Que. “Micro-defects in Ge doped Czochralski grown Si crystals”. J. Crystal Growth 292 (2006), pp.266-271.
 P. Wang, X. Yu, Z. Li, D. Yang, “Improved fracture strength of multicrystalline silicon by germanium doping”. J. Crystal Growth 318 (2011) pp.230-233.
 D. Yang, P. Wang, X. Yu, D. Que. “Germanium –doped crystalline silicon: A new substrate for photovoltaic application” J. Crystal Growth 362 (2013), pp.140-144.
 I. Yonenaga. Growth and mechanical properties of GeSi bulk crystals. J. Materials Science: Materials in Electronics 10 (1999) pp.329-333.
 I. Kurashvili, E. Sanaia, G. Darsavelidze, G. Bokuchava, A. Sichinava, I. Tabatadze, V. Kuchukhidze. ”Physical-mechanical properties of germanium doped monocrystalline silicon”. J. Materials Science and Engineering.A3 11 (2013) pp.698-703.
 B. Roos, H. Richter, J. Wollweber. “Composition dependence of hardness and elastic modulus in Si-Ge measured by nanoindentation –possible consequences for elasto-plastic relaxation and diffusion”. Solid State Phenomena. 47-48 (1996) pp.509-511.
 M.S. Blanter, I. Golovin, H. Neuhauser, H. Sining, Internal friction in metallic materials, A handbook Series: Springer Series in materials Science 90 ( 2007) p.539.
 A. Pushkar. Internal friction in metals and alloys. London (2005) p.640.