{"title":"Physical-Mechanical Characteristics of Monocrystalline Si1-xGex (x\u22640,02) Solid Solutions","authors":"I. Kurashvili, A. Sichinava, G. Bokuchava, G. Darsavelidze","country":null,"institution":"","volume":103,"journal":"International Journal of Physical and Mathematical Sciences","pagesStart":424,"pagesEnd":428,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/10002620","abstract":"Si-Ge solid solutions (bulk poly- and mono-crystalline\r\nsamples, thin films) are characterized by high perspectives for\r\napplication in semiconductor devices, in particular, optoelectronics\r\nand microelectronics. From this point of view, complex studying of\r\nstructural state of the defects and structural-sensitive physical\r\nproperties of Si-Ge solid solutions depending on the contents of Si\r\nand Ge components is very important. Present work deals with the\r\ninvestigations of microstructure, microhardness, internal friction and\r\nshear modulus of Si1-xGex(x\u22640,02) bulk monocrystals conducted at\r\nroom temperature. Si-Ge bulk crystals were obtained by Czochralski\r\nmethod in [111] crystallographic direction. Investigated\r\nmonocrystalline Si-Ge samples are characterized by p-type\r\nconductivity and carriers\u2019 concentration 5.1014-1.1015cm-3.\r\nMicrohardness was studied on Dynamic Ultra Micro hardness Tester\r\nDUH-201S with Berkovich indenter. Investigate samples are characterized with 0,5x0,5x(10-15)mm3\r\nsizes, oriented along [111] direction at torsion oscillations \u22481Hz,\r\nmultistage changing of internal friction and shear modulus has been\r\nrevealed in an interval of strain amplitude of 10-5-5.10-3. Critical\r\nvalues of strain amplitude have been determined at which hysteretic\r\nchanges of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also\r\ndetermined. Dynamic mechanical characteristics decreasing trend is\r\nshown with increasing Ge content in Si-Ge solid solutions. Observed\r\nchanges are discussed from the point of view of interaction of various\r\ndislocations with point defects and their complexes in a real structure\r\nof Si-Ge solid solutions.","references":null,"publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 103, 2015"}