Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3

Search results for: Liangliang Li

3 Some New Subclasses of Nonsingular H-matrices

Authors: Guangbin Wang, Liangliang Li, Fuping Tan

Abstract:

In this paper, we obtain some new subclasses of non¬singular H-matrices by using a diagonally dominant matrix

Keywords: H-matrix, diagonal dominance, a diagonally dominant matrix.

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2 Convergence Analysis of the Generalized Alternating Two-Stage Method

Authors: Guangbin Wang, Liangliang Li, Fuping Tan

Abstract:

In this paper, we give the generalized alternating twostage method in which the inner iterations are accomplished by a generalized alternating method. And we present convergence results of the method for solving nonsingular linear systems when the coefficient matrix of the linear system is a monotone matrix or an H-matrix.

Keywords: Generalized alternating two-stage method, linear system, convergence.

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1 Comparison of the Performance of GaInAsSb and GaSb Cells under Different Temperature Blackbody Radiations

Authors: Liangliang Tang, Chang Xu, Xingying Chen

Abstract:

GaInAsSb cells probably show better performance than GaSb cells in low-temperature thermophotovoltaic systems due to lower bandgap; however, few experiments proved this phenomenon so far. In this paper, numerical simulation is used to evaluate GaInAsSb and GaSb cells with similar structures under different radiation temperatures. We found that GaInAsSb cells with n-type emitters show slightly higher output power densities compared with that of GaSb cells with n-type emitters below 1,550 K-blackbody radiation, and the power density of the later cells will suppress the formers above this temperature point. During the temperature range of 1,000~2,000 K, the efficiencies of GaSb cells are about twice of GaInAsSb cells if perfect filters are used to prevent the emission of the non-absorbed long wavelength photons. Several parameters that affect the GaInAsSb cell were analyzed, such as doping profiles, thicknesses of GaInAsSb epitaxial layer and surface recombination velocity. The non-p junctions, i.e., n-type emitters are better for GaInAsSb cell fabrication, which is similar to that of GaSb cells.

Keywords: Thermophotovoltaic cell, GaSb, GaInAsSb, diffused emitters.

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