Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4

Search results for: N. Dahbi

4 A Computational Study of the Electron Transport in HgCdTe Bulk Semiconductor

Authors: N. Dahbi, M. Daoudi

Abstract:

This paper deals with the use of computational method based on Monte Carlo simulation in order to investigate the transport phenomena of the electron in HgCdTe narrow band gap semiconductor. Via this method we can evaluate the time dependence of the transport parameters: velocity, energy and mobility of electrons through matter (HgCdTe).

Keywords: Computational Mechanics, Monte Carlo, transport parameters, HgCdTe

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3 RBS Characteristic of Cd1−xZnxS Thin Film Fabricated by Vacuum Deposition Method

Authors: N. Dahbi, D. E. Arafah

Abstract:

Cd1−xZnxS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford back-scattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; the RBS spectra of the films showed that homogenous Cd1−xZnxS can be synthesized with x=0.45.

Keywords: Heat Treatment, Chemical Treatment, thin film, Cd1−xZnxS, depth profile, RBS, RUMP simulation, vacuum deposition, ZnS/CdS/ZnS

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2 Defect Profile Simulation of Oxygen Implantation into Si and GaAs

Authors: N. Dahbi, R. B. Taleb

Abstract:

This study concerns the ion implantation of oxygen in two semiconductors Si and GaAs realized by a simulation using the SRIM tool. The goal of this study is to compare the effect of implantation energy on the distribution of implant ions in the two targets and to examine the different processes resulting from the interaction between the ions of oxygen and the target atoms (Si, GaAs). SRIM simulation results indicate that the implanted ions have a profile as a function of Gaussian-type; oxygen produced more vacancies and implanted deeper in Si compared to GaAs. Also, most of the energy loss is due to ionization and phonon production, where vacancy production amounts to few percent of the total energy.

Keywords: Ion implantation, GaAs, defect profile, SRIM, phonon production, vacancies

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1 Wind Power Potential in Selected Algerian Sahara Regions

Authors: M. Dahbi, M. Sellam, A. Benatiallah, A. Harrouz

Abstract:

The wind energy is one of the most significant and rapidly developing renewable energy sources in the world and it provides a clean energy resource, which is a promising alternative in the short term in Algeria The main purpose of this paper is to compared and discuss the wind power potential in three sites located in sahara of Algeria (south west of Algeria) and to perform an investigation on the wind power potential of desert of Algeria. In this comparative, wind speed frequency distributions data obtained from the web site SODA.com are used to calculate the average wind speed and the available wind power. The Weibull density function has been used to estimate the monthly power wind density and to determine the characteristics of monthly parameters of Weibull for these three sites. The annual energy produced by the BWC XL.1 1KW wind machine is obtained and compared. The analysis shows that in the south west of Algeria, at 10 m height, the available wind power was found to vary between 136.59 W/m2 and 231.04 W/m2. The highest potential wind power was found at Adrar, with 21h per day and the mean wind speed is above 6 m/s. Besides, it is found that the annual wind energy generated by that machine lie between 512 KWh and 1643.2 kWh. However, the wind resource appears to be suitable for power production on the sahara and it could provide a viable substitute to diesel oil for irrigation pumps and rural electricity generation.

Keywords: Wind energy, Wind turbine, Weibull distribution, parameters of Wiebull, operating hours

Procedia PDF Downloads 332