Search results for: Shoukat Siddique

Authors: Amar F. Siddique

Abstract:

The Guwahati city is one of the fastest growing cities of the north-eastern region of India, situated on the South Bank of the Brahmaputra River falls in the highest seismic zone level V. The city has witnessed many high magnitude earthquakes in the past decades. The Assam earthquake occurred on August 15, 1950, of moment magnitude 8.7 epicentered near Rima, Tibet was one of the major earthquakes which caused a serious structural damage and widespread soil liquefaction in and around the region. Hence the study of ground motion characteristics of Guwahati city is very essential. In this present work 1D equivalent linear ground response analysis (GRA) has been adopted using Deep soil software. The analysis has been done for two typical sites namely, Panbazar and Azara comprising total four boreholes location in Guwahati city of India. GRA of the sites is carried out by using an input motion recorded at Nongpoh station (recorded PGA 0.048g) and Nongstoin station (recorded PGA 0.047g) of 1997 Indo-Burma earthquake. In comparison to motion recorded at Nongpoh, different amplifications of bedrock peak ground acceleration (PGA) are obtained for all the boreholes by the motion recorded at Nongstoin station; although, the Fourier amplitude ratios (FAR) and fundamental frequencies remain almost same. The difference in recorded duration and frequency content of the two motions mainly influence the amplification of motions thus getting different surface PGA and amplification factor keeping a constant bedrock PGA. From the results of response spectra, it is found that at the period of less than 0.2 sec the ground motion recorded at Nongpoh station will give a high spectral acceleration (SA) on the structures than at Nongstoin station. Again for a period greater than 0.2 sec the ground motion recorded at Nongstoin station will give a high SA on the structures than at Nongpoh station.

Keywords: fourier amplitude ratio, ground response analysis, peak ground acceleration, spectral acceleration

Procedia PDF Downloads 155

Authors: Muhammad Sufyan, Muhammad J. Arif, Muhammad Arshad, Usman Shoukat

Abstract:

In Pakistan, wheat (Triticum aestivum L.) is seriously attacked by the wheat ‎aphid. Naturally, bio control agents play an important role in managing wheat aphid. However, association ‎among pest, natural enemies and host plant is highly affected by food resource ‎concentration and predator/parasitoid factor of any ecosystem. The present ‎study was conducted to estimate the effect of different dose levels of macro ‎and micronutrients on the aphid population and its entomophagous insect ‎on wheat and their tri-trophic association. The experiment was laid out in ‎RCBD with six different combinations of macro and micronutrients and a control treatment. The data was initiated from the second week of ‎the February till the maturity of the crop. Data regarding aphid population and ‎coccinellids counts were collected on weekly basis and subjected to analysis of ‎variance and mean comparison. The data revealed that aphid ‎population was at peak in the last week of March. Coccinellids population ‎increased side by side with aphid population and declined after second week of ‎April. Aphid parasitism was maximum 25% on recommended dose of Double and ‎Flasher and minimum 8.67% on control treatment. Maximum aphid population was observed on first April with 687.2 specimens. However, this maximum population was shown against the application of Double + Flasher treatment. The minimum aphid population was recorded after the application of HiK Gold + Flasher recommended dose on 15th April. The coccinellids population was at peak level at on 8th April and against the treatment double recommended dose of HiK gold + Flasher. Amount of nitrogen, phosphorus and potassium percentage dry leaves ‎components was maximum (2.33, 0.18 and 2.62 % dry leaves. respectively) in ‎plots treated with recommended double dose mixture of Double + Flasher and ‎Hi-K Gold + Flasher while it was minimum (1.43, 0.12 and 1.77 dry leaves ‎respectively) in plots where no nutrients applied. The result revealed that maximum parasitism was at recommended level of micro and macro nutrients application.‎ Maximum micro nutrients zinc, copper, manganese, iron and boron found with values 46.67 ppm, 21.81 ppm, 62.35 ppm, 152.69 ppm and 36.78 respectively. The result also showed that Over application of macro and micro nutrients should be avoided because it do not help in pest control, conversely it may cause stress on plant. The treatment Double and Flasher recommended dose ratio is almost comparable with recommended dose and present studies confirm its usefulness on wheat.

Keywords: entomophagous insects, macro and micro nutrients, tri-trophic, wheat aphid

Procedia PDF Downloads 203

Authors: Umair Shoukat Ali, Rashna Hoshang Sukhia, Mubassar Fida

Abstract:

Introduction: The objective of the study was to compare outcomes in terms of Bleeding index (BI), Gingival Index (GI), and Orthodontic Plaque Index (OPI) with video graphics and plaque disclosing tablets (PDT) versus verbal instructions in adult orthodontic patients undergoing fixed appliance treatment (FAT). Materials and Methods: Adult orthodontic patients have recruited from outpatient orthodontic clinics who fulfilled the inclusion criteria and were randomly allocated to three groups i.e., video, PDT, and verbal groups. We included patients undergoing FAT for six months of both genders with all teeth bonded mesial to first molars having no co-morbid conditions such as rheumatic fever and diabetes mellitus. Subjects who had gingivitis as assessed by Bleeding Index (BI), Gingival Index (GI), and Orthodontic Plaque Index (OPI) were recruited. We excluded subjects having > 2 mm of clinical attachment loss, pregnant and lactating females, any history of periodontal therapy within the last six months, and any consumption of antibiotics or anti-inflammatory drugs within the last one month. Pre- and post-interventional measurements were taken at two intervals only for BI, GI, and OPI. The primary outcome of this trial was to evaluate the mean change in the BI, GI, and OPI in the three study groups. A computer-generated randomization list was used to allocate subjects to one of the three study groups using a random permuted block sampling of 6 and 9 to randomize the samples. No blinding of the investigator or the participants was performed. Results: A total of 99 subjects were assessed for eligibility, out of which 96 participants were randomized as three of the participants declined to be part of this trial. This resulted in an equal number of participants (32) that were analyzed in all three groups. The mean change in the oral hygiene indices score was assessed, and we found no statistically significant difference among the three interventional groups. Pre- and post-interventional results showed statistically significant improvement in the oral hygiene indices for the video and PDT groups. No statistically significant difference for age, gender, and education level on oral hygiene indices were found. Simple linear regression showed that the video group produced significantly higher mean OPI change as compared to other groups. No harm was observed during the trial. Conclusions: Visual aids performed better as compared to the verbal group. Gender, age, and education level had no statistically significant impact on the oral hygiene indices. Longer follow-ups will be required to see the long-term effects of these interventions. Trial Registration: NCT04386421 Funding: Aga Khan University and Hospital (URC 183022)

Keywords: oral hygiene, orthodontic treatment, adults, randomized clinical trial

Procedia PDF Downloads 94

Authors: Amir Shariffar, Haider Salman, Tanveer Siddique, Omar Manasreh

Abstract:

According to the recent studies on metal-oxide memristors, researchers tend to improve the stability, endurance, and uniformity of resistive switching (RS) behavior in memristors. Specifically, the main challenge is to prevent abrupt ruptures in the memristor’s filament during the RS process. To address this problem, we are proposing a low-cost hybrid structure of metal oxide quantum dots (QDs) and thin films to control the formation of filaments in memristors. We aim to use metal oxide quantum dots because of their unique electronic properties and quantum confinement, which may improve the resistive switching behavior. QDs have discrete energy spectra due to electron confinement in three-dimensional space. Because of Coulomb repulsion between electrons, only a few free electrons are contained in a quantum dot. This fact might guide the growth direction for the conducting filaments in the metal oxide memristor. As a result, it is expected that QDs can improve the endurance and uniformity of RS behavior in memristors. Moreover, we use a hybrid structure of intrinsic n-type quantum dots and p-type thin films to introduce a potential barrier at the junction that can smooth the transition between high and low resistance states. A bottom-up approach is used for fabricating the proposed memristor using different types of metal-oxide QDs and thin films. We synthesize QDs including, zinc oxide, molybdenum trioxide, and nickel oxide combined with spin-coated thin films of titanium dioxide, copper oxide, and hafnium dioxide. We employ fluorine-doped tin oxide (FTO) coated glass as the substrate for deposition and bottom electrode. Then, the active layer composed of one type of quantum dots, and the opposite type of thin films is spin-coated onto the FTO. Lastly, circular gold electrodes are deposited with a shadow mask by using electron-beam (e-beam) evaporation at room temperature. The fabricated devices are characterized using a probe station with a semiconductor parameter analyzer. The current-voltage (I-V) characterization is analyzed for each device to determine the conduction mechanism. We evaluate the memristor’s performance in terms of stability, endurance, and retention time to identify the optimal memristive structure. Finally, we assess the proposed hypothesis before we proceed to the optimization process for fabricating the memristor.

Keywords: memristor, quantum dot, resistive switching, thin film

Procedia PDF Downloads 99