Ethylene Epoxidation in a Low-Temperature Parallel Plate Dielectric Barrier Discharge System: Effects of Ethylene Feed Position and O2/C2H4 Feed Molar Ratio
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Ethylene Epoxidation in a Low-Temperature Parallel Plate Dielectric Barrier Discharge System: Effects of Ethylene Feed Position and O2/C2H4 Feed Molar Ratio

Authors: Bunphot Paosombat, Thitiporn Suttikul, Sumaeth Chavadej

Abstract:

The effects of ethylene (C2H4) feed position and O2/C2H4 feed molar ratio on ethylene epoxidation in a parallel dielectric barrier discharge (DBD) were studied. The results showed that the ethylene feed position fraction of 0.5 and the feed molar ratio of O2/C2H4 of 0.2:1 gave the highest EO selectivity of 34.3% and the highest EO yield of 5.28% with low power consumptions of 2.11×10-16 Ws/molecule of ethylene converted and 6.34×10-16 Ws/molecule of EO produced when the DBD system was operated under the best conditions: an applied voltage of 19 kV, an input frequency of 500 Hz and a total feed flow rate of 50 cm3/min. The separate ethylene feed system provided much higher epoxidation activity as compared to the mixed feed system which gave EO selectivity of 15.5%, EO yield of 2.1% and the power consumption of EO produced of 7.7×10-16 Ws/molecule.

Keywords: Dielectric Barrier Discharge, C2H4 Feed Position, Epoxidation, Ethylene Oxide

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1061092

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