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High Performance In0.42Ga0.58As/In0.26Ga0.74As Vertical Cavity Surface Emitting Quantum Well Laser on In0.31Ga0.69As Ternary Substrate

Authors: Md. M. Biswas, Md. M. Hossain, Shaikh Nuruddin

Abstract:

This paper reports on the theoretical performance analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum well (MQW) vertical cavity surface emitting laser (VCSEL) on the ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has been obtained at room temperature for 7.5 mA injection current. The material gain has been estimated to be ~3156 cm-1 at room temperature with the injection carrier concentration of 2×1017 cm-3. The modulation bandwidth of this laser is measured to be 9.34 GHz at room temperature for the biasing current of 2 mA above the threshold value. The outcomes reveal that the proposed InGaAsbased MQW laser is the promising one for optical communication system.

Keywords: Quantum well, VCSEL, output power, materialgain, modulation bandwidth.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1331549

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