Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30840
High Performance In0.42Ga0.58As/In0.26Ga0.74As Vertical Cavity Surface Emitting Quantum Well Laser on In0.31Ga0.69As Ternary Substrate

Authors: Md. M. Biswas, Md. M. Hossain, Shaikh Nuruddin


This paper reports on the theoretical performance analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum well (MQW) vertical cavity surface emitting laser (VCSEL) on the ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has been obtained at room temperature for 7.5 mA injection current. The material gain has been estimated to be ~3156 cm-1 at room temperature with the injection carrier concentration of 2×1017 cm-3. The modulation bandwidth of this laser is measured to be 9.34 GHz at room temperature for the biasing current of 2 mA above the threshold value. The outcomes reveal that the proposed InGaAsbased MQW laser is the promising one for optical communication system.

Keywords: Quantum well, modulation bandwidth, output power, VCSEL, materialgain

Digital Object Identifier (DOI):

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1351


[1] J. Orton, The Story of Semiconductors. Oxford University, 2004.
[2] M. S. Alam, M. S. Rahman, M. R. Islam, A. G. Bhuiyan, and M. Yamada, "Rfractive Index, Absorption Coefficient and Photoelastic Constant: Key Parameters of InGaAs Material Relevant to InGaAs-Based Device Performance," 19th IPRM 14- 18, Mastuse, Japan, May 2007.
[3] N. Tansu, J-Y Yeh, and L. J. Mawst, "Extremely low thresholdcurrent- density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm," Appl. Phy. Lett., vol. 82, no. 23, Jan. 2003.
[4] M. Kaneko, S. Nakayama, K. Kaswiwa, S. Aizawa, and N. S. Takahashi, "Lattice Mismatched LPE Growth of InGaP on Patterned InP Substrate," Cryst. Res. Tech., vol. 37, no. 2-3, pp. 177-182, 2002.
[5] K. Otsubo, Y. Nishijima, and H. Ishikawa, "Long- wavelength Semiconductor Lasers on InGaAs ternary substrates with excellent temperature characteristics," Fujitsu Sci. Tech. J., vol. 34, no. 2, pp. 212-222, 1998.
[6] Z. Zhang, "Epitaxial growth optimization for 1.3-╬╝m InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers," Dept. of Microelectronics and Applied Physics, Royal Institute of Technology (KTH), Stockholm, 2008.
[7] M. Mehta, "High-Power, High-Bandwidth, High Temperature Long-Wavelength Vertical-Cavity Surface- Emitting Lasers," Electrical and Computer Engineering, University of California, Santa Barbara, June 2006.
[8] P. Bhattacharya, Semiconductor Optoelectronic Devices, Pearson Prentice Hall, 2006.
[9] S. L. Chung, Physics of Optoelectronic Devices, Wiley, New York, 1995.
[10] J. singh, Semiconductor Devices Basic Principle, John Wiley, Asia, 2004.
[11] J. C. L. Yong, J. M. Rorison, and I. H. White, "1.3-╬╝m quantumwell InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study," IEEE J. Quantum Electron., vol. 38, no. 12, pp. 1553-1564, Dec. 2002.
[12] K. M. Lau, "Ultralow threshold quantum well lasers," in Quantum Well Laser, P. Zory, Ed. San Diego, CA: Academic, 1993.
[13] D. Ahn, S. L. Chuang, and Y. C. Chang, "Valence-band mixing effects on the gain and the refractive index change of quantumwell lasers," J. Appl. Phys., vol. 64, no. 8, pp. 4056-4064, Oct. 1988.
[14] Y-A Chang, J-R Chen, H-C Kuo, Y-K Kuo, and S-C Wang, "Theoretical and Experimental Analysis on InAlGaAs/AlGaAs Active Region of 850-nm Vertical-Cavity Surface-Emitting Lasers," J. of Lightwave Tech., vol. 24, no. 1, Jan. 2006.
[15] J. M. Senior, Optical Fiber Communication (Principles and practice), Prentice-Hall, 2000.
[16] L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, New York, NY: Wiley, 1995.
[17] D. F. Feezell, "Long-Wavelength Vertical-Cavity Surface- Emitting Lasers with Selectively Etched Thin Apertures," in Electrical and Computer Engineering, University of California, Santa Barbara, Sep. 2005.