Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching
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Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching

Authors: L. S. Chuah, Z. Hassan, C. W. Chin, H. Abu Hassan


This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.

Keywords: Photoluminescence, porous GaN, electrochemical etching, Si, RF-MBE.

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[1] H. Sohn, S. Letant, M. J. Sailor, W.C. Trogler, Detection of Fluorophosphonate Chemical Warfare Agents by Catalytic Hydrolysis with a Porous Silicon Interferometer, J. Am. Chem. Soc. 122 (2000) pp. 5399-5400.
[2] L.T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57 (1990) pp.1046-1048.
[3] A.G. Cullis, L.T. Canham, P. D.J. Calcott , The structural and luminescence properties of porous silicon, J. Appl. Phys. 82 (1997) pp.909-965.
[4] L. Brus, Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous Silicon, J. Phys. Chem. 98 (1994) pp.3575-3581.
[5] V. S. Y Lin, K. Motesharei, K.P.S. Dancil, M.J. Sailor, M. R. Ghadiri, A Porous Silicon-Based Optical Interferometric Biosensor , Science, 278 (1997) pp.840-843.
[6] P.M. Fauchet, L. Tsybeskov, C. Peng, S.P. Duttagupta, J. Von Behren, Y. Kostoulas, J. M. V. Vandyshev, K. D. Hirschman, Light-emitting porous silicon: materials science, properties, and device applications, IEEE J. Sel. Top. Quantum Electron. 1, (1995) pp.1126-1139.
[7] F. Y. Soldatenkov, V. P. Ulin, A. A. Yakovenko, O. M. Fedorova, S. G. Konnikov, V. I. Korol-kov, Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs, Tech. Phys. Lett. 25 (1999) pp.852-854.
[8] X. Li, Y-W Kim, P. W. Bohn, I. Adesida, In-plane bandgap control in porous GaN through electroless wet chemical etching, Appl. Phys. Lett. 80 (2002) pp.980-982.
[9] C. K. Inoki, T.S. Kuan, C. D. Lee, A. Sagar, R. M. Feenstra, Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy,Mater. Res. Soc. Symp. Proc, 722 (2002) pp pp. K1.3.1-K.1.3.6.
[10] C. K. Inoki, T.S. Kuan, C. D. Lee, A. SAGAR, R. M. FEENSTRA, D. D. KOLESKE, D. J. DIAZ, P. W. BOHN, I. ADESIDA, Growth of GaN on Porous GaN and SiC Substrates,J. Electron. Mater. 32 (2003) pp.855-860.
[11] Physics of semiconductor nanostructures, edited by K.P. Jain (Narosa, New Delhi, 1997).
[12] G. Fishman, I. Mihalcescu, R. Romestain, Effective-mass approximation and statistical description of luminescence line shape in porous silicon, Phys. Rev. B 48 (1993) pp.1464-1467.
[13] Y. H. Xie, M. S. Hybertsen, William L. Wilson, S. A. Ipri, G. E. Carver, W. L. Brown, E. Dons, B. E. Weir, A. R. Kortan, G. P. Watson, and A. J. Liddle, Absorption and luminescence studies of free-standing porous silicon films, Phy. Rev. B 49 (1994) pp.5386-5397.
[14] G.C. John, V.A. Singh, Theory of the photoluminescence spectra of porous silicon, Phys. Rev. B 50 (1994) pp.5329-5334.
[15] G.C. John, V.A. Singh, Porous silicon: theoretical studies, Phys. Rev. 263 (1995) pp.93-151.
[16] F.K. Yam, Z. Hassan, S.S. Ng, Porous GaN prepared by UV assisted electrochemical etching, Thin Solid Films 515 (2007) pp.3469-3474.
[17] C. Adelmann, E. Martinez-Guerrero, F. Chabuel, J. Simon, B. Bataillou, G. Mula, L. DANG, S. Pelekanos, T. B. Daudin, G. Feuillet, H. Mariette, Growth and characterisation of self-assembled cubic GaN quantum dots, Mater. Sci. Eng., B 82 (2001), pp.212-214.
[18] A. P. Vajpeyi, S. Tripathy, S. J. Chua, E. A. Fitzgerald, Investigation of optical properties of nanoporous GaN films, Physica E, 28 (2005), pp.141-149.
[19] H. Benisty, H. De Neve, C. Weisbuch, Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends, IEEE J. Sel. Top. Quantum Electron. 34 (1998), pp.1612-1631.
[20] E. F Schubert, Light-Emitting Diodes, Cambridge University Press, U.K, 2003.
[21] F.K. Yam, Z. Hassan, L.S. Chuah, Y.P. Ali, Investigation of structural and optical properties of nanoporous GaN film, Applies Surface Science, vol 253 (2007) pp.7429-7434.
[22] D.J. Lockwood, P. Schmuki, H.J. Labbe, J.W. Fraser, Optical Properties of Porous GaAs, Physica E 4 (1999) pp.102-110.
[23] H.C. Casey Jr., G.G. Fountain, R.G. Alley, B.P. Keller, S.P. Denbaars, Low interface trap density for remote plasma deposited SiO2 on n-type GaN, Applied Physics Letters 68 (1996) pp.1850-1852.