%0 Journal Article
	%A L. S. Chuah and  Z. Hassan and  C. W. Chin and  H. Abu Hassan
	%D 2009
	%J International Journal of Chemical and Molecular Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 31, 2009
	%T Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching
	%U https://publications.waset.org/pdf/15776
	%V 31
	%X This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.

	%P 327 - 330