Isotropic Stress Distribution in Cu/(001) Fe Two Sheets

Authors: A. Derardja, L. Baroura, M. Brioua

Abstract:

The nanotechnology based on epitaxial systems includes single or arranged misfit dislocations. In general, whatever is the type of dislocation or the geometry of the array formed by the dislocations; it is important for experimental studies to know exactly the stress distribution for which there is no analytical expression [1, 2]. This work, using a numerical analysis, deals with relaxation of epitaxial layers having at their interface a periodic network of edge misfit dislocations. The stress distribution is estimated by using isotropic elasticity. The results show that the thickness of the two sheets is a crucial parameter in the stress distributions and then in the profile of the two sheets. A comparative study between the case of single dislocation and the case of parallel network shows that the layers relaxed better when the interface is covered by a parallel arrangement of misfit. Consequently, a single dislocation at the interface produces an important stress field which can be reduced by inserting a parallel network of dislocations with suitable periodicity.

Keywords: Parallel array of misfit, interface, isotropic elasticity, single crystalline substrates, coherent interface

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1334886

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