A Novel Design in the Use of Planar Transformers for LDMOS Based Amplifiers in Bands II, III, DRM+, DVB-T and DAB+
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A Novel Design in the Use of Planar Transformers for LDMOS Based Amplifiers in Bands II, III, DRM+, DVB-T and DAB+

Authors: Antonis Constantinides, Christos Yiallouras

Abstract:

The coaxial transformer-coupled push-pull circuitry has been used widely in HF and VHF amplifiers for many decades without significant changes in the topology of the transformers. Basic changes over the years concerned the construction and turns ratio of the transformers as has been imposed upon the newer technologies active devices demands. The balun transmission line transformers applied in push-pull amplifiers enable input/output impedance transformation, but are mainly used to convert the balanced output into unbalanced and the input unbalanced into balanced. A simple and affordable alternative solution over the traditional coaxial transformer is the coreless planar balun. A key advantage over the traditional approach lies in the high specifications repeatability; simplifying the amplifier construction requirements as the planar balun constitutes an integrated part of the PCB copper layout. This paper presents the performance analysis of a planar LDMOS MRFE6VP5600 Push-Pull amplifier that enables robust operation in Band III, DVB-T, DVB-T2 standards but functions equally well in Band II, for DRM+ new generation transmitters.

Keywords: Amplifier, balun, complex impedance, LDMOS, planar-transformers.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1105505

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References:


[1] Gajadharsing, J. R., Bosma, O., “Analysis and design of a 200 W LDMOS based Doherty amplifier for 3G base stations”, Microwave Symposium Digest, 2004 IEEE MTT-S International (Volume: 2), June 2014
[2] Freescale Application Note AN1034 “Three Baluns designs for Push- Pull Amplifiers”, 1993.
[3] Fager, Carvalho N.B., Pedro, Zirath, “Intermodulation distortion behavior in LDMOS transistor amplifiers”, Microwave Conference, Vol.1, pp131-134 2002.
[4] Lee, Seung-Yup; Jeon, Kye-Ik; Yong-Sub Lee; Lee, Kang-Seung; Yoon- Ha Jeong "The IMD sweet spots varied with gate bias voltages and input powers in RF LDMOS power amplifiers", Microwave Conference, 2003. 33rd European, on page(s): 1353 - 1356 Vol.3 Volume: 3, 7-9 Oct. 2003.
[5] S. R. Novis and L. Pelletier, "IMD parameters describe LDMOS device performance", Micro. RF, vol. 37, pp.69 -74 1998
[6] S. Hayano, Y. Nakajima, H. Saotome, and Y. Saito, “A new type high frequency transformer,” IEEE Trans. Magn., vol. 27, pp. 5205–5207, Nov. 1991.
[7] Freescale Semiconductor, Document Number, MRFE6VP5600H Technical Data, (Rev. 1, 1/2011).
[8] NXP Application note AN10858, “174 MHz to 230 MHz DVB-T Power Amplifier with the BLF578”.
[9] H. Granberg. (1993). Motorolla Semiconductor Application Note AN749, ‘Broadband Transformers and Power Combining Techniques”
[10] H. S. Tsai, M. J. W. Rodwell, “Planar Amplifier Array With Improved Bandwidth Using Folded-Slots”, IEEE Microwave And Guided Wave Leti'ers, Vol. 4, No. 4, April 1994
[11] Tsung-Chi Yu, Chaoen Wang, Lung-Hai Chang, Ming-Chyuan Lin, Meng-Shu Yeh, “The Development Of High Power Solid-State Amplifier In NSRRC”, Proceedings of IPAC’10, Kyoto, Japan, 2010