Excitonic Refractive Index Change in High Purity GaAs Modulator at Room Temperature for Optical Fiber Communication Network
In this paper, we have compared and analyzed the electroabsorption properties between with and without excitonic effect bulk in high purity GaAs spatial light modulator for optical fiber communication network. The eletroabsorption properties such as absorption spectra, change in absorption spectra, change in refractive index and extinction ration has been calculated. We have also compared the result of absorption spectra and change in absorption spectra with the experimental results and found close agreement with experimental results.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1338140Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1580
 J. D. Dow and D. Redfield, “Electroabsorption in semiconductors: the excitonic absorption edge,” Phys. Rev. B, vol. 1, pp. 3358-3371, 1970.
 M.S.Kayastha, M. Takahashi, and K. Wakita, “High-extinction ratio and low-driving-voltage spatial light modulator by use of ultrahighpurity GaAs,” Jpn. J. Appl. Phys,vol. 49, pp. 102201-102205, 2010.
 M. S. Kayastha, D. P.Sapkota, M. Takahashi and K.Wakita, “Effect of electric field on exciton in high-purity GaAs epilayer measured at room temperature,” Electronic Lett.,vol. 49, pp. 57-59, 2013.
 D. P. Sapkota, M. S. Kayastha, M. Takahashi and K. Wakita, "Proposed Model of Electric Field Effects inHigh-Purity GaAs at Room Temperature," Optics and Photonics Journal, vol. 4, pp. 99-103, 2014
 T. Hiroshima," Electric field induced refractive index changes in GaAsAlxGa1-xAs quantum well," Appl. Phys. Lett., vol. 50, pp.968- 970, 1987.