In this paper, we have compared and analyzed the

\r\nelectroabsorption properties between with and without excitonic

\r\neffect bulk in high purity GaAs spatial light modulator for optical

\r\nfiber communication network. The eletroabsorption properties such

\r\nas absorption spectra, change in absorption spectra, change in

\r\nrefractive index and extinction ration has been calculated. We have

\r\nalso compared the result of absorption spectra and change in

\r\nabsorption spectra with the experimental results and found close

\r\nagreement with experimental results.<\/p>\r\n","references":"[1] J. D. Dow and D. Redfield, \u201cElectroabsorption in semiconductors: the\r\nexcitonic absorption edge,\u201d Phys. Rev. B, vol. 1, pp. 3358-3371, 1970.\r\n[2] M.S.Kayastha, M. Takahashi, and K. Wakita, \u201cHigh-extinction ratio\r\nand low-driving-voltage spatial light modulator by use of ultrahighpurity\r\nGaAs,\u201d Jpn. J. Appl. Phys,vol. 49, pp. 102201-102205, 2010.\r\n[3] M. S. Kayastha, D. P.Sapkota, M. Takahashi and K.Wakita, \u201cEffect of\r\nelectric field on exciton in high-purity GaAs epilayer measured at room\r\ntemperature,\u201d Electronic Lett.,vol. 49, pp. 57-59, 2013.\r\n[4] D. P. Sapkota, M. S. Kayastha, M. Takahashi and K. Wakita, \"Proposed\r\nModel of Electric Field Effects inHigh-Purity GaAs at Room\r\nTemperature,\" Optics and Photonics Journal, vol. 4, pp. 99-103, 2014\r\n[5] T. Hiroshima,\" Electric field induced refractive index changes in\r\nGaAsAlxGa1-xAs quantum well,\" Appl. Phys. Lett., vol. 50, pp.968-\r\n970, 1987.","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 98, 2015"}