Search results for: Chibuzo Emeruwa

Authors: Chibuzo Emeruwa, Nnamdi N. Omehe

Abstract:

This work attempts to effectively compare Dropped Call Rate (DCR) against industry benchmarks and competitor networks to identify areas for improvement and sets performance targets. Four mobile telecommunication networks operational in Bayelsa State Nigeria were considered. Results obtained shows that MTN and Airtel performed well within the regulator’s benchmark of ≤ 1% in all cases, while Globacom and 9moblie had instances where their performance fell outside the benchmark. The maximum values obtained within the period in view was 18.52% and it was in March 2016 for Globacom while the least value recorded is 0.00% and it was in September 2018 for 9mobile. In the seven years period under review, MTN and Airtel performed within the Nigerian Communication Commission’s (NCC) benchmark all through. This affirms that it is possible for the networks to perform optimally if adequate measures are put in place for improved Quality of Service (QoS).

Keywords: Attempted calls, data, dropped call rate, handover failure rate, key performance indicator, mobile network.

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Authors: Nnamdi N. Omehe, Chibuzo Emeruwa

Abstract:

ZnIn2Se4 and ZnIn2Te4 are vacancy defect materials whose properties have been investigated using Density Functional Theory (DFT) framework. The pseudopotential method in conjunction with the LDA+U technique and the Projector Augmented Wave (PAW) was used to calculate the electronic band structure, total density of state, and the partial density of state; while the norm-conserving pseudopotential was used to calculate the dielectric response function with scissors shift. Both ZnIn2Se4 and ZnIn2Te4 were predicted to be semiconductors with energy band gap of 1.66 eV and 1.33 eV respectively, and they both have direct energy band gap at the gamma point of high symmetry. The topmost valence subband for ZnIn2Se4 and ZnIn2Te4 has an energy width of 5.7 eV and 6.0 eV respectively. The calculations of partial density of state (PDOS) show that for ZnIn2Se4, the top of the valence band is dominated by Se-4p orbital, while the bottom of the conduction band is composed of In-5p, In-5s, and Zn-4s states. PDOS for ZnIn2Te4, shows that the top of the valence band is mostly of Te-5p states, while its conduction band bottom is composed mainly of Zn-4s, Te-5p, Te-5s, and In-5s states. Dielectric response function calculation yielded (0) of 11.9 and 36 for ZnIn2Se4 and ZnIn2Te4 respectively.

Keywords: Optoelectronic, Dielectric Response Function, LDA+U, band structure calculation.

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