Search results for: capacitance
2 Levels of Students’ Understandings of Electric Field Due to a Continuous Charged Distribution: A Case Study of a Uniformly Charged Insulating Rod
Authors: Thanida Sujarittham, Narumon Emarat, Jintawat Tanamatayarat, Kwan Arayathanitkul, Suchai Nopparatjamjomras
Abstract:
Electric field is an important fundamental concept in electrostatics. In high-school, generally Thai students have already learned about definition of electric field, electric field due to a point charge, and superposition of electric fields due to multiple-point charges. Those are the prerequisite basic knowledge students holding before entrancing universities. In the first-year university level, students will be quickly revised those basic knowledge and will be then introduced to a more complicated topic—electric field due to continuous charged distributions. We initially found that our freshman students, who were from the Faculty of Science and enrolled in the introductory physic course (SCPY 158), often seriously struggled with the basic physics concepts—superposition of electric fields and inverse square law and mathematics being relevant to this topic. These also then resulted on students’ understanding of advanced topics within the course such as Gauss's law, electric potential difference, and capacitance. Therefore, it is very important to determine students' understanding of electric field due to continuous charged distributions. The open-ended question about sketching net electric field vectors from a uniformly charged insulating rod was administered to 260 freshman science students as pre- and post-tests. All of their responses were analyzed and classified into five levels of understandings. To get deep understanding of each level, 30 students were interviewed toward their individual responses. The pre-test result found was that about 90% of students had incorrect understanding. Even after completing the lectures, there were only 26.5% of them could provide correct responses. Up to 50% had confusions and irrelevant ideas. The result implies that teaching methods in Thai high schools may be problematic. In addition for our benefit, these students’ alternative conceptions identified could be used as a guideline for developing the instructional method currently used in the course especially for teaching electrostatics.Keywords: Electrostatics Electric field due to continuous charged distributions, inverse square law, superposition principle, levels of student understandings.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 21141 Lead-Free Inorganic Cesium Tin-Germanium Triiodide Perovskites for Photovoltaic Application
Authors: Seyedeh Mozhgan Seyed-Talebi, Javad Beheshtian
Abstract:
The toxicity of lead associated with the lifecycle of perovskite solar cells (PSCs( is a serious concern which may prove to be a major hurdle in the path toward their commercialization. The current proposed lead-free PSCs including Ag(I), Bi(III), Sb(III), Ti(IV), Ge(II), and Sn(II) low-toxicity cations are still plagued with the critical issues of poor stability and low efficiency. This is mainly because of their chemical stability. In the present research, utilization of all inorganic CsSnGeI3 based materials offers the advantages to enhance resistance of device to degradation, reduce the cost of cells, and minimize the carrier recombination. The presence of inorganic halide perovskite improves the photovoltaic parameters of PCSs via improved surface coverage and stability. The inverted structure of simulated devices using a 1D simulator like solar cell capacitance simulator (SCAPS) version 3308 involves TCOHTL/Perovskite/ETL/Au contact layer. PEDOT:PSS, PCBM, and CsSnGeI3 used as hole transporting layer (HTL), electron transporting layer (ETL), and perovskite absorber layer in the inverted structure for the first time. The holes are injected from highly stable and air tolerant Sn0.5Ge0.5I3 perovskite composition to HTM and electrons from the perovskite to ETL. Simulation results revealed a great dependence of power conversion efficiency (PCE) on the thickness and defect density of perovskite layer. Here the effect of an increase in operating temperature from 300 K to 400 K on the performance of CsSnGeI3 based perovskite devices is investigated. Comparison between simulated CsSnGeI3 based PCSs and similar real testified devices with spiro-OMeTAD as HTL showed that the extraction of carriers at the interfaces of perovskite absorber depends on the energy level mismatches between perovskite and HTL/ETL. We believe that optimization results reported here represent a critical avenue for fabricating the stable, low-cost, efficient, and eco-friendly all-inorganic Cs-Sn-Ge based lead-free perovskite devices.
Keywords: Hole transporting layer, lead-free, perovskite Solar cell, SCAPS-1D, Sn-Ge based material.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 814